KR101178755B1 - 노광 장치, 노광 방법 및 디바이스 제조 방법 - Google Patents

노광 장치, 노광 방법 및 디바이스 제조 방법 Download PDF

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Publication number
KR101178755B1
KR101178755B1 KR1020067022688A KR20067022688A KR101178755B1 KR 101178755 B1 KR101178755 B1 KR 101178755B1 KR 1020067022688 A KR1020067022688 A KR 1020067022688A KR 20067022688 A KR20067022688 A KR 20067022688A KR 101178755 B1 KR101178755 B1 KR 101178755B1
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South Korea
Prior art keywords
liquid
substrate
delete delete
space
optical system
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Expired - Fee Related
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KR1020067022688A
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English (en)
Korean (ko)
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KR20070032641A (ko
Inventor
히로유키 나가사카
다케시 오쿠야마
Original Assignee
가부시키가이샤 니콘 엔지니어링
가부시키가이샤 니콘
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Publication of KR20070032641A publication Critical patent/KR20070032641A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
KR1020067022688A 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법 Expired - Fee Related KR101178755B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2004172569 2004-06-10
JPJP-P-2004-00172569 2004-06-10
JPJP-P-2004-00245260 2004-08-25
JP2004245260 2004-08-25
JP2004330582 2004-11-15
JPJP-P-2004-00330582 2004-11-15
PCT/JP2005/010576 WO2005122221A1 (ja) 2004-06-10 2005-06-09 露光装置、露光方法及びデバイス製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020127006833A Division KR101310472B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법

Publications (2)

Publication Number Publication Date
KR20070032641A KR20070032641A (ko) 2007-03-22
KR101178755B1 true KR101178755B1 (ko) 2012-08-31

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Family Applications (8)

Application Number Title Priority Date Filing Date
KR1020067022688A Expired - Fee Related KR101178755B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020147015812A Expired - Fee Related KR101612656B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020177001781A Ceased KR20170010907A (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020187017618A Ceased KR20180072867A (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020127033098A Expired - Fee Related KR101485650B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020137022569A Expired - Fee Related KR101556454B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020127006833A Expired - Fee Related KR101310472B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020157005498A Expired - Fee Related KR101699965B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법

Family Applications After (7)

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KR1020147015812A Expired - Fee Related KR101612656B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020177001781A Ceased KR20170010907A (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020187017618A Ceased KR20180072867A (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020127033098A Expired - Fee Related KR101485650B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020137022569A Expired - Fee Related KR101556454B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020127006833A Expired - Fee Related KR101310472B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020157005498A Expired - Fee Related KR101699965B1 (ko) 2004-06-10 2005-06-09 노광 장치, 노광 방법 및 디바이스 제조 방법

Country Status (9)

Country Link
US (7) US8482716B2 (cg-RX-API-DMAC7.html)
EP (4) EP3203321A1 (cg-RX-API-DMAC7.html)
JP (10) JP5295165B2 (cg-RX-API-DMAC7.html)
KR (8) KR101178755B1 (cg-RX-API-DMAC7.html)
CN (1) CN102736446B (cg-RX-API-DMAC7.html)
IL (4) IL179787A (cg-RX-API-DMAC7.html)
SG (3) SG188877A1 (cg-RX-API-DMAC7.html)
TW (6) TWI612393B (cg-RX-API-DMAC7.html)
WO (1) WO2005122221A1 (cg-RX-API-DMAC7.html)

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