KR101120122B1 - 제 2 기판을 포함하며 상부면 및 하부면에서 노출된 기판표면들을 갖는 반도체 패키지 - Google Patents
제 2 기판을 포함하며 상부면 및 하부면에서 노출된 기판표면들을 갖는 반도체 패키지 Download PDFInfo
- Publication number
- KR101120122B1 KR101120122B1 KR1020077027669A KR20077027669A KR101120122B1 KR 101120122 B1 KR101120122 B1 KR 101120122B1 KR 1020077027669 A KR1020077027669 A KR 1020077027669A KR 20077027669 A KR20077027669 A KR 20077027669A KR 101120122 B1 KR101120122 B1 KR 101120122B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- package
- die
- assembly
- land
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
- H01L25/0652—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next and on each other, i.e. mixed assemblies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05553—Shape in top view being rectangular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/0651—Wire or wire-like electrical connections from device to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/0652—Bump or bump-like direct electrical connections from substrate to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06551—Conductive connections on the side of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06558—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices having passive surfaces facing each other, i.e. in a back-to-back arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06568—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices decreasing in size, e.g. pyramidical stack
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06572—Auxiliary carrier between devices, the carrier having an electrical connection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06575—Auxiliary carrier between devices, the carrier having no electrical connection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06582—Housing for the assembly, e.g. chip scale package [CSP]
- H01L2225/06586—Housing with external bump or bump-like connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06596—Structural arrangements for testing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
- H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
- H01L2225/1017—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support
- H01L2225/1023—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
- H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
- H01L2225/1041—Special adaptations for top connections of the lowermost container, e.g. redistribution layer, integral interposer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
- H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
- H01L2225/1047—Details of electrical connections between containers
- H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/143—Digital devices
- H01L2924/1433—Application-specific integrated circuit [ASIC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
- Combinations Of Printed Boards (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US59471105P | 2005-04-29 | 2005-04-29 | |
| US60/594,711 | 2005-04-29 | ||
| US69284205P | 2005-06-20 | 2005-06-20 | |
| US60/692,842 | 2005-06-20 | ||
| US11/394,635 US7429786B2 (en) | 2005-04-29 | 2006-03-31 | Semiconductor package including second substrate and having exposed substrate surfaces on upper and lower sides |
| US11/394,635 | 2006-03-31 | ||
| PCT/US2006/016143 WO2006118982A2 (en) | 2005-04-29 | 2006-04-27 | Semiconductor substrate with exposed upper and lower sides |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20080073637A KR20080073637A (ko) | 2008-08-11 |
| KR101120122B1 true KR101120122B1 (ko) | 2012-03-23 |
Family
ID=37233660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020077027669A Active KR101120122B1 (ko) | 2005-04-29 | 2006-04-27 | 제 2 기판을 포함하며 상부면 및 하부면에서 노출된 기판표면들을 갖는 반도체 패키지 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7429786B2 (enExample) |
| JP (1) | JP4503677B2 (enExample) |
| KR (1) | KR101120122B1 (enExample) |
| TW (1) | TWI322489B (enExample) |
| WO (1) | WO2006118982A2 (enExample) |
Families Citing this family (114)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6930256B1 (en) | 2002-05-01 | 2005-08-16 | Amkor Technology, Inc. | Integrated circuit substrate having laser-embedded conductive patterns and method therefor |
| US9691635B1 (en) | 2002-05-01 | 2017-06-27 | Amkor Technology, Inc. | Buildup dielectric layer having metallization pattern semiconductor package fabrication method |
| US7548430B1 (en) | 2002-05-01 | 2009-06-16 | Amkor Technology, Inc. | Buildup dielectric and metallization process and semiconductor package |
| US7633765B1 (en) | 2004-03-23 | 2009-12-15 | Amkor Technology, Inc. | Semiconductor package including a top-surface metal layer for implementing circuit features |
| WO2004034433A2 (en) * | 2002-10-08 | 2004-04-22 | Chippac, Inc. | Semiconductor stacked multi-package module having inverted second package |
| US11081370B2 (en) | 2004-03-23 | 2021-08-03 | Amkor Technology Singapore Holding Pte. Ltd. | Methods of manufacturing an encapsulated semiconductor device |
| US10811277B2 (en) | 2004-03-23 | 2020-10-20 | Amkor Technology, Inc. | Encapsulated semiconductor package |
| SG130055A1 (en) | 2005-08-19 | 2007-03-20 | Micron Technology Inc | Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices |
| SG130066A1 (en) * | 2005-08-26 | 2007-03-20 | Micron Technology Inc | Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices |
| US8012867B2 (en) * | 2006-01-31 | 2011-09-06 | Stats Chippac Ltd | Wafer level chip scale package system |
| US20070187818A1 (en) * | 2006-02-15 | 2007-08-16 | Texas Instruments Incorporated | Package on package design a combination of laminate and tape substrate |
| US7986043B2 (en) * | 2006-03-08 | 2011-07-26 | Stats Chippac Ltd. | Integrated circuit package on package system |
| US7981702B2 (en) * | 2006-03-08 | 2011-07-19 | Stats Chippac Ltd. | Integrated circuit package in package system |
| DE102006016345A1 (de) * | 2006-04-05 | 2007-10-18 | Infineon Technologies Ag | Halbleitermodul mit diskreten Bauelementen und Verfahren zur Herstellung desselben |
| KR100885419B1 (ko) * | 2006-04-26 | 2009-02-24 | 삼성전자주식회사 | 적층형 패키지 구조체 |
| KR100792352B1 (ko) * | 2006-07-06 | 2008-01-08 | 삼성전기주식회사 | 패키지 온 패키지의 바텀기판 및 그 제조방법 |
| US20080029884A1 (en) * | 2006-08-03 | 2008-02-07 | Juergen Grafe | Multichip device and method for producing a multichip device |
| US20080054496A1 (en) * | 2006-08-30 | 2008-03-06 | Neill Thornton | High temperature operating package and circuit design |
| TWM308495U (en) * | 2006-09-08 | 2007-03-21 | Lingsen Precision Ind Ltd | Microelectromechanical module package structure |
| US8154881B2 (en) * | 2006-11-13 | 2012-04-10 | Telecommunication Systems, Inc. | Radiation-shielded semiconductor assembly |
| US7550857B1 (en) | 2006-11-16 | 2009-06-23 | Amkor Technology, Inc. | Stacked redistribution layer (RDL) die assembly package |
| US7608921B2 (en) * | 2006-12-07 | 2009-10-27 | Stats Chippac, Inc. | Multi-layer semiconductor package |
| US7566962B2 (en) * | 2006-12-26 | 2009-07-28 | Advanced Semiconductor Engineering Inc. | Semiconductor package structure and method for manufacturing the same |
| TWI341576B (en) * | 2007-01-24 | 2011-05-01 | Chipmos Technologies Inc | Chip package reducing wiring layers on substrate and its carrier |
| JP2010519769A (ja) * | 2007-02-21 | 2010-06-03 | ラムバス・インコーポレーテッド | 高速メモリパッケージ |
| TWI335070B (en) * | 2007-03-23 | 2010-12-21 | Advanced Semiconductor Eng | Semiconductor package and the method of making the same |
| US7777354B2 (en) * | 2007-06-05 | 2010-08-17 | Stats Chippac Ltd. | Integrated circuit package system with leaded package |
| US9330945B2 (en) * | 2007-09-18 | 2016-05-03 | Stats Chippac Ltd. | Integrated circuit package system with multi-chip module |
| US7888184B2 (en) * | 2008-06-20 | 2011-02-15 | Stats Chippac Ltd. | Integrated circuit packaging system with embedded circuitry and post, and method of manufacture thereof |
| JP2010010437A (ja) * | 2008-06-27 | 2010-01-14 | Stanley Electric Co Ltd | 光半導体装置 |
| TWI473553B (zh) * | 2008-07-03 | 2015-02-11 | 日月光半導體製造股份有限公司 | 晶片封裝結構 |
| KR101297192B1 (ko) | 2008-11-10 | 2013-08-19 | 삼성전자주식회사 | 화상형성장치, 칩, 및, 칩 패키지 |
| TWI499024B (zh) * | 2009-01-07 | 2015-09-01 | 日月光半導體製造股份有限公司 | 堆疊式多封裝構造裝置、半導體封裝構造及其製造方法 |
| US8012797B2 (en) * | 2009-01-07 | 2011-09-06 | Advanced Semiconductor Engineering, Inc. | Method for forming stackable semiconductor device packages including openings with conductive bumps of specified geometries |
| US20100171206A1 (en) * | 2009-01-07 | 2010-07-08 | Chi-Chih Chu | Package-on-Package Device, Semiconductor Package, and Method for Manufacturing The Same |
| US8710634B2 (en) * | 2009-03-25 | 2014-04-29 | Stats Chippac Ltd. | Integrated circuit packaging system with an integral-interposer-structure and method of manufacture thereof |
| US20100244223A1 (en) * | 2009-03-25 | 2010-09-30 | Cho Namju | Integrated circuit packaging system with an integral-interposer-structure and method of manufacture thereof |
| US8003445B2 (en) * | 2009-03-26 | 2011-08-23 | Stats Chippac Ltd. | Integrated circuit packaging system with z-interconnects having traces and method of manufacture thereof |
| US7960827B1 (en) | 2009-04-09 | 2011-06-14 | Amkor Technology, Inc. | Thermal via heat spreader package and method |
| US8623753B1 (en) * | 2009-05-28 | 2014-01-07 | Amkor Technology, Inc. | Stackable protruding via package and method |
| US8222538B1 (en) | 2009-06-12 | 2012-07-17 | Amkor Technology, Inc. | Stackable via package and method |
| US8533853B2 (en) | 2009-06-12 | 2013-09-10 | Telecommunication Systems, Inc. | Location sensitive solid state drive |
| US8106499B2 (en) * | 2009-06-20 | 2012-01-31 | Stats Chippac Ltd. | Integrated circuit packaging system with a dual substrate package and method of manufacture thereof |
| US20100327419A1 (en) | 2009-06-26 | 2010-12-30 | Sriram Muthukumar | Stacked-chip packages in package-on-package apparatus, methods of assembling same, and systems containing same |
| US8471154B1 (en) | 2009-08-06 | 2013-06-25 | Amkor Technology, Inc. | Stackable variable height via package and method |
| US8743561B2 (en) | 2009-08-26 | 2014-06-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer-level molded structure for package assembly |
| TWI469283B (zh) * | 2009-08-31 | 2015-01-11 | 日月光半導體製造股份有限公司 | 封裝結構以及封裝製程 |
| US8796561B1 (en) | 2009-10-05 | 2014-08-05 | Amkor Technology, Inc. | Fan out build up substrate stackable package and method |
| EP2309535A1 (en) | 2009-10-09 | 2011-04-13 | Telefonaktiebolaget L M Ericsson (Publ) | Chip package with a chip embedded in a wiring body |
| US8304921B2 (en) * | 2009-11-13 | 2012-11-06 | Stats Chippac Ltd. | Integrated circuit packaging system with interconnect and method of manufacture thereof |
| US8198131B2 (en) | 2009-11-18 | 2012-06-12 | Advanced Semiconductor Engineering, Inc. | Stackable semiconductor device packages |
| JP2011128140A (ja) * | 2009-11-19 | 2011-06-30 | Dainippon Printing Co Ltd | センサデバイス及びその製造方法 |
| TWI411051B (zh) * | 2009-12-02 | 2013-10-01 | 晨星半導體股份有限公司 | 封裝層疊方法與結構及其電路板系統 |
| US8937381B1 (en) | 2009-12-03 | 2015-01-20 | Amkor Technology, Inc. | Thin stackable package and method |
| US9691734B1 (en) | 2009-12-07 | 2017-06-27 | Amkor Technology, Inc. | Method of forming a plurality of electronic component packages |
| TWI408785B (zh) | 2009-12-31 | 2013-09-11 | 日月光半導體製造股份有限公司 | 半導體封裝結構 |
| US8569894B2 (en) | 2010-01-13 | 2013-10-29 | Advanced Semiconductor Engineering, Inc. | Semiconductor package with single sided substrate design and manufacturing methods thereof |
| US8536462B1 (en) | 2010-01-22 | 2013-09-17 | Amkor Technology, Inc. | Flex circuit package and method |
| TWI419283B (zh) | 2010-02-10 | 2013-12-11 | 日月光半導體製造股份有限公司 | 封裝結構 |
| TWI411075B (zh) | 2010-03-22 | 2013-10-01 | 日月光半導體製造股份有限公司 | 半導體封裝件及其製造方法 |
| US8981577B2 (en) * | 2010-03-24 | 2015-03-17 | Stats Chippac Ltd. | Integrated circuit packaging system with interconnect and method of manufacture thereof |
| US8624374B2 (en) | 2010-04-02 | 2014-01-07 | Advanced Semiconductor Engineering, Inc. | Semiconductor device packages with fan-out and with connecting elements for stacking and manufacturing methods thereof |
| US8278746B2 (en) | 2010-04-02 | 2012-10-02 | Advanced Semiconductor Engineering, Inc. | Semiconductor device packages including connecting elements |
| US8300423B1 (en) | 2010-05-25 | 2012-10-30 | Amkor Technology, Inc. | Stackable treated via package and method |
| US8294276B1 (en) | 2010-05-27 | 2012-10-23 | Amkor Technology, Inc. | Semiconductor device and fabricating method thereof |
| US8338229B1 (en) | 2010-07-30 | 2012-12-25 | Amkor Technology, Inc. | Stackable plasma cleaned via package and method |
| US8717775B1 (en) | 2010-08-02 | 2014-05-06 | Amkor Technology, Inc. | Fingerprint sensor package and method |
| US9059187B2 (en) | 2010-09-30 | 2015-06-16 | Ibiden Co., Ltd. | Electronic component having encapsulated wiring board and method for manufacturing the same |
| US8337657B1 (en) | 2010-10-27 | 2012-12-25 | Amkor Technology, Inc. | Mechanical tape separation package and method |
| TWI451546B (zh) | 2010-10-29 | 2014-09-01 | 日月光半導體製造股份有限公司 | 堆疊式封裝結構、其封裝結構及封裝結構之製造方法 |
| TWI455265B (zh) * | 2010-11-01 | 2014-10-01 | 矽品精密工業股份有限公司 | 具微機電元件之封裝結構及其製法 |
| US8482134B1 (en) | 2010-11-01 | 2013-07-09 | Amkor Technology, Inc. | Stackable package and method |
| US9748154B1 (en) | 2010-11-04 | 2017-08-29 | Amkor Technology, Inc. | Wafer level fan out semiconductor device and manufacturing method thereof |
| US8525318B1 (en) | 2010-11-10 | 2013-09-03 | Amkor Technology, Inc. | Semiconductor device and fabricating method thereof |
| US8557629B1 (en) | 2010-12-03 | 2013-10-15 | Amkor Technology, Inc. | Semiconductor device having overlapped via apertures |
| US8535961B1 (en) | 2010-12-09 | 2013-09-17 | Amkor Technology, Inc. | Light emitting diode (LED) package and method |
| TWI445155B (zh) | 2011-01-06 | 2014-07-11 | 日月光半導體製造股份有限公司 | 堆疊式封裝結構及其製造方法 |
| US8171800B1 (en) * | 2011-01-25 | 2012-05-08 | Continental Automotive Systems, Inc. | Differential pressure sensor using dual backside absolute pressure sensing |
| KR101828386B1 (ko) * | 2011-02-15 | 2018-02-13 | 삼성전자주식회사 | 스택 패키지 및 그의 제조 방법 |
| US9721872B1 (en) | 2011-02-18 | 2017-08-01 | Amkor Technology, Inc. | Methods and structures for increasing the allowable die size in TMV packages |
| US9171792B2 (en) | 2011-02-28 | 2015-10-27 | Advanced Semiconductor Engineering, Inc. | Semiconductor device packages having a side-by-side device arrangement and stacking functionality |
| US9013011B1 (en) | 2011-03-11 | 2015-04-21 | Amkor Technology, Inc. | Stacked and staggered die MEMS package and method |
| KR101140113B1 (ko) | 2011-04-26 | 2012-04-30 | 앰코 테크놀로지 코리아 주식회사 | 반도체 디바이스 |
| US8765497B2 (en) * | 2011-09-02 | 2014-07-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packaging and function tests for package-on-package and system-in-package structures |
| US8653674B1 (en) | 2011-09-15 | 2014-02-18 | Amkor Technology, Inc. | Electronic component package fabrication method and structure |
| US8633598B1 (en) | 2011-09-20 | 2014-01-21 | Amkor Technology, Inc. | Underfill contacting stacking balls package fabrication method and structure |
| US9029962B1 (en) | 2011-10-12 | 2015-05-12 | Amkor Technology, Inc. | Molded cavity substrate MEMS package fabrication method and structure |
| TWI449152B (zh) | 2011-12-21 | 2014-08-11 | 財團法人工業技術研究院 | 半導體元件堆疊結構 |
| KR20130105175A (ko) * | 2012-03-16 | 2013-09-25 | 삼성전자주식회사 | 보호 층을 갖는 반도체 패키지 및 그 형성 방법 |
| US9385006B2 (en) * | 2012-06-21 | 2016-07-05 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming an embedded SOP fan-out package |
| KR101366461B1 (ko) | 2012-11-20 | 2014-02-26 | 앰코 테크놀로지 코리아 주식회사 | 반도체 디바이스 및 그 제조 방법 |
| US9799592B2 (en) | 2013-11-19 | 2017-10-24 | Amkor Technology, Inc. | Semicondutor device with through-silicon via-less deep wells |
| US10115661B2 (en) | 2013-02-08 | 2018-10-30 | Qualcomm Incorporated | Substrate-less discrete coupled inductor structure |
| AT513747B1 (de) | 2013-02-28 | 2014-07-15 | Mikroelektronik Ges Mit Beschränkter Haftung Ab | Bestückungsverfahren für Schaltungsträger und Schaltungsträger |
| CN104051411B (zh) | 2013-03-15 | 2018-08-28 | 台湾积体电路制造股份有限公司 | 叠层封装结构 |
| US9768048B2 (en) | 2013-03-15 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package on-package structure |
| KR101488590B1 (ko) | 2013-03-29 | 2015-01-30 | 앰코 테크놀로지 코리아 주식회사 | 반도체 디바이스 및 그 제조 방법 |
| US20150014852A1 (en) * | 2013-07-12 | 2015-01-15 | Yueli Liu | Package assembly configurations for multiple dies and associated techniques |
| US9478498B2 (en) | 2013-08-05 | 2016-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through package via (TPV) |
| US9524948B2 (en) * | 2013-09-30 | 2016-12-20 | Mediatek Inc. | Package structure |
| KR101607981B1 (ko) | 2013-11-04 | 2016-03-31 | 앰코 테크놀로지 코리아 주식회사 | 반도체 패키지용 인터포저 및 이의 제조 방법, 제조된 인터포저를 이용한 반도체 패키지 |
| KR102190390B1 (ko) | 2013-11-07 | 2020-12-11 | 삼성전자주식회사 | 반도체 패키지 및 이의 제조 방법 |
| CN104760920B (zh) | 2014-01-02 | 2017-01-04 | 意法半导体研发(深圳)有限公司 | 具有mems ic的紧凑电子封装体和相关方法 |
| CN105097680B (zh) * | 2014-05-16 | 2019-06-07 | 恩智浦美国有限公司 | 用于集成电路器件的保护性封装 |
| JP6235423B2 (ja) * | 2014-06-30 | 2017-11-22 | 東芝メモリ株式会社 | 半導体装置 |
| US20170053858A1 (en) * | 2015-08-20 | 2017-02-23 | Intel Corporation | Substrate on substrate package |
| US10229859B2 (en) | 2016-08-17 | 2019-03-12 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and a method of manufacturing the same |
| US9960328B2 (en) | 2016-09-06 | 2018-05-01 | Amkor Technology, Inc. | Semiconductor device and manufacturing method thereof |
| US9859255B1 (en) * | 2016-10-01 | 2018-01-02 | Intel Corporation | Electronic device package |
| KR102359904B1 (ko) | 2019-09-16 | 2022-02-08 | 삼성전자주식회사 | 반도체 패키지 |
| US20230065615A1 (en) * | 2021-08-27 | 2023-03-02 | Advanced Semiconductor Engineering, Inc. | Electronic device |
| TWI808835B (zh) * | 2022-07-20 | 2023-07-11 | 強茂股份有限公司 | 晶圓級晶片尺寸封裝件及方法 |
| KR102855264B1 (ko) * | 2022-11-22 | 2025-09-03 | 앱솔릭스 인코포레이티드 | 패키징 기판 및 이를 포함하는 반도체 패키지 |
| TWI843347B (zh) * | 2022-12-20 | 2024-05-21 | 矽品精密工業股份有限公司 | 電子封裝件及其製法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6083775A (en) | 1998-02-07 | 2000-07-04 | Siliconware Precision Industries Co., Ltd. | Method of encapsulating a chip |
| US6165815A (en) | 1996-02-20 | 2000-12-26 | Micron Technology, Inc. | Method of fabrication of stacked semiconductor devices |
| JP2003086733A (ja) | 2001-09-11 | 2003-03-20 | Matsushita Electric Ind Co Ltd | 半導体装置とその製造方法およびそれを用いた電子機器 |
Family Cites Families (120)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8927164D0 (en) | 1989-12-01 | 1990-01-31 | Inmos Ltd | Semiconductor chip packages |
| US5446620A (en) * | 1990-08-01 | 1995-08-29 | Staktek Corporation | Ultra high density integrated circuit packages |
| FR2670322B1 (fr) * | 1990-12-05 | 1997-07-04 | Matra Espace | Modules de memoire a l'etat solide et dispositifs de memoire comportant de tels modules |
| JPH05152505A (ja) | 1991-11-25 | 1993-06-18 | Fujitsu Ltd | 電子回路実装基板 |
| US5222014A (en) * | 1992-03-02 | 1993-06-22 | Motorola, Inc. | Three-dimensional multi-chip pad array carrier |
| US5422435A (en) * | 1992-05-22 | 1995-06-06 | National Semiconductor Corporation | Stacked multi-chip modules and method of manufacturing |
| FR2694840B1 (fr) | 1992-08-13 | 1994-09-09 | Commissariat Energie Atomique | Module multi-puces à trois dimensions. |
| US5340771A (en) * | 1993-03-18 | 1994-08-23 | Lsi Logic Corporation | Techniques for providing high I/O count connections to semiconductor dies |
| JP2531928B2 (ja) | 1993-11-05 | 1996-09-04 | 株式会社東芝 | 半導体スタック |
| US5444296A (en) * | 1993-11-22 | 1995-08-22 | Sun Microsystems, Inc. | Ball grid array packages for high speed applications |
| US5436203A (en) * | 1994-07-05 | 1995-07-25 | Motorola, Inc. | Shielded liquid encapsulated semiconductor device and method for making the same |
| MY112145A (en) * | 1994-07-11 | 2001-04-30 | Ibm | Direct attachment of heat sink attached directly to flip chip using flexible epoxy |
| US5652185A (en) | 1995-04-07 | 1997-07-29 | National Semiconductor Corporation | Maximized substrate design for grid array based assemblies |
| US5998864A (en) | 1995-05-26 | 1999-12-07 | Formfactor, Inc. | Stacking semiconductor devices, particularly memory chips |
| US5719440A (en) | 1995-12-19 | 1998-02-17 | Micron Technology, Inc. | Flip chip adaptor package for bare die |
| US7166495B2 (en) * | 1996-02-20 | 2007-01-23 | Micron Technology, Inc. | Method of fabricating a multi-die semiconductor package assembly |
| US6075289A (en) * | 1996-10-24 | 2000-06-13 | Tessera, Inc. | Thermally enhanced packaged semiconductor assemblies |
| US5994166A (en) * | 1997-03-10 | 1999-11-30 | Micron Technology, Inc. | Method of constructing stacked packages |
| US5898219A (en) * | 1997-04-02 | 1999-04-27 | Intel Corporation | Custom corner attach heat sink design for a plastic ball grid array integrated circuit package |
| JPH10294423A (ja) * | 1997-04-17 | 1998-11-04 | Nec Corp | 半導体装置 |
| US5982633A (en) * | 1997-08-20 | 1999-11-09 | Compaq Computer Corporation | Opposed ball grid array mounting |
| JP3834426B2 (ja) * | 1997-09-02 | 2006-10-18 | 沖電気工業株式会社 | 半導体装置 |
| CA2218307C (en) * | 1997-10-10 | 2006-01-03 | Gennum Corporation | Three dimensional packaging configuration for multi-chip module assembly |
| JP3644662B2 (ja) * | 1997-10-29 | 2005-05-11 | 株式会社ルネサステクノロジ | 半導体モジュール |
| JPH11219984A (ja) | 1997-11-06 | 1999-08-10 | Sharp Corp | 半導体装置パッケージおよびその製造方法ならびにそのための回路基板 |
| US5899705A (en) * | 1997-11-20 | 1999-05-04 | Akram; Salman | Stacked leads-over chip multi-chip module |
| JP2000208698A (ja) * | 1999-01-18 | 2000-07-28 | Toshiba Corp | 半導体装置 |
| SG75958A1 (en) * | 1998-06-01 | 2000-10-24 | Hitachi Ulsi Sys Co Ltd | Semiconductor device and a method of producing semiconductor device |
| US6451624B1 (en) | 1998-06-05 | 2002-09-17 | Micron Technology, Inc. | Stackable semiconductor package having conductive layer and insulating layers and method of fabrication |
| US6034875A (en) * | 1998-06-17 | 2000-03-07 | International Business Machines Corporation | Cooling structure for electronic components |
| US5977640A (en) * | 1998-06-26 | 1999-11-02 | International Business Machines Corporation | Highly integrated chip-on-chip packaging |
| JP2000058691A (ja) | 1998-08-07 | 2000-02-25 | Sharp Corp | ミリ波半導体装置 |
| US6201302B1 (en) * | 1998-12-31 | 2001-03-13 | Sampo Semiconductor Corporation | Semiconductor package having multi-dies |
| JP2000228468A (ja) * | 1999-02-05 | 2000-08-15 | Mitsubishi Electric Corp | 半導体チップ及び半導体装置 |
| JP3685947B2 (ja) * | 1999-03-15 | 2005-08-24 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
| US6118176A (en) * | 1999-04-26 | 2000-09-12 | Advanced Semiconductor Engineering, Inc. | Stacked chip assembly utilizing a lead frame |
| US6890798B2 (en) * | 1999-06-08 | 2005-05-10 | Intel Corporation | Stacked chip packaging |
| US6238949B1 (en) | 1999-06-18 | 2001-05-29 | National Semiconductor Corporation | Method and apparatus for forming a plastic chip on chip package module |
| JP3526788B2 (ja) * | 1999-07-01 | 2004-05-17 | 沖電気工業株式会社 | 半導体装置の製造方法 |
| SG87046A1 (en) * | 1999-08-17 | 2002-03-19 | Micron Technology Inc | Multi-chip module with stacked dice |
| US6424033B1 (en) * | 1999-08-31 | 2002-07-23 | Micron Technology, Inc. | Chip package with grease heat sink and method of making |
| WO2001018864A1 (en) * | 1999-09-03 | 2001-03-15 | Seiko Epson Corporation | Semiconductor device, method of manufacture thereof, circuit board, and electronic device |
| JP2001156212A (ja) * | 1999-09-16 | 2001-06-08 | Nec Corp | 樹脂封止型半導体装置及びその製造方法 |
| JP2001094045A (ja) * | 1999-09-22 | 2001-04-06 | Seiko Epson Corp | 半導体装置 |
| JP3485507B2 (ja) * | 1999-10-25 | 2004-01-13 | 沖電気工業株式会社 | 半導体装置 |
| JP2001127246A (ja) * | 1999-10-29 | 2001-05-11 | Fujitsu Ltd | 半導体装置 |
| US6376904B1 (en) * | 1999-12-23 | 2002-04-23 | Rambus Inc. | Redistributed bond pads in stacked integrated circuit die package |
| JP2001223326A (ja) | 2000-02-09 | 2001-08-17 | Hitachi Ltd | 半導体装置 |
| KR100335717B1 (ko) * | 2000-02-18 | 2002-05-08 | 윤종용 | 고용량 메모리 카드 |
| US6462421B1 (en) * | 2000-04-10 | 2002-10-08 | Advanced Semicondcutor Engineering, Inc. | Multichip module |
| JP2001308262A (ja) * | 2000-04-26 | 2001-11-02 | Mitsubishi Electric Corp | 樹脂封止bga型半導体装置 |
| TW445610B (en) | 2000-06-16 | 2001-07-11 | Siliconware Precision Industries Co Ltd | Stacked-die packaging structure |
| TW459361B (en) * | 2000-07-17 | 2001-10-11 | Siliconware Precision Industries Co Ltd | Three-dimensional multiple stacked-die packaging structure |
| US6472758B1 (en) | 2000-07-20 | 2002-10-29 | Amkor Technology, Inc. | Semiconductor package including stacked semiconductor dies and bond wires |
| JP2002040095A (ja) * | 2000-07-26 | 2002-02-06 | Nec Corp | 半導体装置及びその実装方法 |
| US6607937B1 (en) * | 2000-08-23 | 2003-08-19 | Micron Technology, Inc. | Stacked microelectronic dies and methods for stacking microelectronic dies |
| JP3377001B2 (ja) * | 2000-08-31 | 2003-02-17 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、回路基板並びに電子機器 |
| JP4570809B2 (ja) * | 2000-09-04 | 2010-10-27 | 富士通セミコンダクター株式会社 | 積層型半導体装置及びその製造方法 |
| US6492726B1 (en) | 2000-09-22 | 2002-12-10 | Chartered Semiconductor Manufacturing Ltd. | Chip scale packaging with multi-layer flip chip arrangement and ball grid array interconnection |
| JP2002118201A (ja) * | 2000-10-05 | 2002-04-19 | Hitachi Ltd | 半導体装置およびその製造方法 |
| JP3913481B2 (ja) | 2001-01-24 | 2007-05-09 | シャープ株式会社 | 半導体装置および半導体装置の製造方法 |
| TW459363B (en) | 2000-11-22 | 2001-10-11 | Kingpak Tech Inc | Integrated circuit stacking structure and the manufacturing method thereof |
| JP3798620B2 (ja) | 2000-12-04 | 2006-07-19 | 富士通株式会社 | 半導体装置の製造方法 |
| US6340846B1 (en) * | 2000-12-06 | 2002-01-22 | Amkor Technology, Inc. | Making semiconductor packages with stacked dies and reinforced wire bonds |
| US6777819B2 (en) * | 2000-12-20 | 2004-08-17 | Siliconware Precision Industries Co., Ltd. | Semiconductor package with flash-proof device |
| US6734539B2 (en) * | 2000-12-27 | 2004-05-11 | Lucent Technologies Inc. | Stacked module package |
| JP2002208656A (ja) * | 2001-01-11 | 2002-07-26 | Mitsubishi Electric Corp | 半導体装置 |
| US6388313B1 (en) * | 2001-01-30 | 2002-05-14 | Siliconware Precision Industries Co., Ltd. | Multi-chip module |
| JP2002231885A (ja) | 2001-02-06 | 2002-08-16 | Mitsubishi Electric Corp | 半導体装置 |
| JP4780844B2 (ja) * | 2001-03-05 | 2011-09-28 | Okiセミコンダクタ株式会社 | 半導体装置 |
| TW502408B (en) * | 2001-03-09 | 2002-09-11 | Advanced Semiconductor Eng | Chip with chamfer |
| JP2002280516A (ja) * | 2001-03-19 | 2002-09-27 | Toshiba Corp | 半導体モジュール |
| SG108245A1 (en) * | 2001-03-30 | 2005-01-28 | Micron Technology Inc | Ball grid array interposer, packages and methods |
| US6627980B2 (en) | 2001-04-12 | 2003-09-30 | Formfactor, Inc. | Stacked semiconductor device assembly with microelectronic spring contacts |
| US6400007B1 (en) * | 2001-04-16 | 2002-06-04 | Kingpak Technology Inc. | Stacked structure of semiconductor means and method for manufacturing the same |
| JP2002373969A (ja) * | 2001-06-15 | 2002-12-26 | Oki Electric Ind Co Ltd | 半導体装置及び半導体装置の製造方法 |
| US6900528B2 (en) * | 2001-06-21 | 2005-05-31 | Micron Technology, Inc. | Stacked mass storage flash memory package |
| US6734552B2 (en) * | 2001-07-11 | 2004-05-11 | Asat Limited | Enhanced thermal dissipation integrated circuit package |
| US6451626B1 (en) * | 2001-07-27 | 2002-09-17 | Charles W.C. Lin | Three-dimensional stacked semiconductor package |
| KR100445073B1 (ko) * | 2001-08-21 | 2004-08-21 | 삼성전자주식회사 | 듀얼 다이 패키지 |
| US6787916B2 (en) * | 2001-09-13 | 2004-09-07 | Tru-Si Technologies, Inc. | Structures having a substrate with a cavity and having an integrated circuit bonded to a contact pad located in the cavity |
| US6847105B2 (en) * | 2001-09-21 | 2005-01-25 | Micron Technology, Inc. | Bumping technology in stacked die configurations |
| US6599779B2 (en) * | 2001-09-24 | 2003-07-29 | St Assembly Test Service Ltd. | PBGA substrate for anchoring heat sink |
| US6555917B1 (en) | 2001-10-09 | 2003-04-29 | Amkor Technology, Inc. | Semiconductor package having stacked semiconductor chips and method of making the same |
| DE10297316T5 (de) | 2001-10-09 | 2004-12-09 | Tessera, Inc., San Jose | Gestapelte Baugruppen |
| TW523887B (en) * | 2001-11-15 | 2003-03-11 | Siliconware Precision Industries Co Ltd | Semiconductor packaged device and its manufacturing method |
| US6737750B1 (en) * | 2001-12-07 | 2004-05-18 | Amkor Technology, Inc. | Structures for improving heat dissipation in stacked semiconductor packages |
| US20030113952A1 (en) * | 2001-12-19 | 2003-06-19 | Mahesh Sambasivam | Underfill materials dispensed in a flip chip package by way of a through hole |
| TW523894B (en) * | 2001-12-24 | 2003-03-11 | Siliconware Precision Industries Co Ltd | Semiconductor device and its manufacturing method |
| US6891276B1 (en) * | 2002-01-09 | 2005-05-10 | Bridge Semiconductor Corporation | Semiconductor package device |
| US7034388B2 (en) * | 2002-01-25 | 2006-04-25 | Advanced Semiconductor Engineering, Inc. | Stack type flip-chip package |
| JP2003273317A (ja) * | 2002-03-19 | 2003-09-26 | Nec Electronics Corp | 半導体装置及びその製造方法 |
| JP3688249B2 (ja) | 2002-04-05 | 2005-08-24 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP3550391B2 (ja) | 2002-05-15 | 2004-08-04 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
| US7081578B2 (en) * | 2002-05-17 | 2006-07-25 | Crimson Technology, Inc. | Musical performance information compression apparatus, and musical performance information decoding apparatus |
| US6906415B2 (en) * | 2002-06-27 | 2005-06-14 | Micron Technology, Inc. | Semiconductor device assemblies and packages including multiple semiconductor devices and methods |
| KR100442880B1 (ko) | 2002-07-24 | 2004-08-02 | 삼성전자주식회사 | 적층형 반도체 모듈 및 그 제조방법 |
| US7132311B2 (en) * | 2002-07-26 | 2006-11-07 | Intel Corporation | Encapsulation of a stack of semiconductor dice |
| US6838761B2 (en) * | 2002-09-17 | 2005-01-04 | Chippac, Inc. | Semiconductor multi-package module having wire bond interconnect between stacked packages and having electrical shield |
| US7053476B2 (en) * | 2002-09-17 | 2006-05-30 | Chippac, Inc. | Semiconductor multi-package module having package stacked over die-down flip chip ball grid array package and having wire bond interconnect between stacked packages |
| US7064426B2 (en) * | 2002-09-17 | 2006-06-20 | Chippac, Inc. | Semiconductor multi-package module having wire bond interconnect between stacked packages |
| US6972481B2 (en) | 2002-09-17 | 2005-12-06 | Chippac, Inc. | Semiconductor multi-package module including stacked-die package and having wire bond interconnect between stacked packages |
| US20040061213A1 (en) * | 2002-09-17 | 2004-04-01 | Chippac, Inc. | Semiconductor multi-package module having package stacked over die-up flip chip ball grid array package and having wire bond interconnect between stacked packages |
| US7034387B2 (en) * | 2003-04-04 | 2006-04-25 | Chippac, Inc. | Semiconductor multipackage module including processor and memory package assemblies |
| WO2004034433A2 (en) * | 2002-10-08 | 2004-04-22 | Chippac, Inc. | Semiconductor stacked multi-package module having inverted second package |
| TW567601B (en) | 2002-10-18 | 2003-12-21 | Siliconware Precision Industries Co Ltd | Module device of stacked semiconductor package and method for fabricating the same |
| SG114585A1 (en) * | 2002-11-22 | 2005-09-28 | Micron Technology Inc | Packaged microelectronic component assemblies |
| KR100621991B1 (ko) | 2003-01-03 | 2006-09-13 | 삼성전자주식회사 | 칩 스케일 적층 패키지 |
| US6861288B2 (en) * | 2003-01-23 | 2005-03-01 | St Assembly Test Services, Ltd. | Stacked semiconductor packages and method for the fabrication thereof |
| TW576549U (en) | 2003-04-04 | 2004-02-11 | Advanced Semiconductor Eng | Multi-chip package combining wire-bonding and flip-chip configuration |
| TWI225292B (en) | 2003-04-23 | 2004-12-11 | Advanced Semiconductor Eng | Multi-chips stacked package |
| US6818980B1 (en) * | 2003-05-07 | 2004-11-16 | Asat Ltd. | Stacked semiconductor package and method of manufacturing the same |
| TWI299551B (en) * | 2003-06-25 | 2008-08-01 | Via Tech Inc | Quad flat no-lead type chip carrier |
| US6930378B1 (en) * | 2003-11-10 | 2005-08-16 | Amkor Technology, Inc. | Stacked semiconductor die assembly having at least one support |
| KR100564585B1 (ko) * | 2003-11-13 | 2006-03-28 | 삼성전자주식회사 | 이중 스택된 bga 패키지 및 다중 스택된 bga 패키지 |
| US20060138631A1 (en) * | 2003-12-31 | 2006-06-29 | Advanced Semiconductor Engineering, Inc. | Multi-chip package structure |
| US20060043556A1 (en) | 2004-08-25 | 2006-03-02 | Chao-Yuan Su | Stacked packaging methods and structures |
| US7271496B2 (en) | 2005-02-04 | 2007-09-18 | Stats Chippac Ltd. | Integrated circuit package-in-package system |
| US7445962B2 (en) | 2005-02-10 | 2008-11-04 | Stats Chippac Ltd. | Stacked integrated circuits package system with dense routability and high thermal conductivity |
| US7354800B2 (en) * | 2005-04-29 | 2008-04-08 | Stats Chippac Ltd. | Method of fabricating a stacked integrated circuit package system |
-
2006
- 2006-03-31 US US11/394,635 patent/US7429786B2/en active Active
- 2006-04-27 KR KR1020077027669A patent/KR101120122B1/ko active Active
- 2006-04-27 WO PCT/US2006/016143 patent/WO2006118982A2/en not_active Ceased
- 2006-04-27 JP JP2008509150A patent/JP4503677B2/ja active Active
- 2006-04-28 TW TW095115379A patent/TWI322489B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6165815A (en) | 1996-02-20 | 2000-12-26 | Micron Technology, Inc. | Method of fabrication of stacked semiconductor devices |
| US6083775A (en) | 1998-02-07 | 2000-07-04 | Siliconware Precision Industries Co., Ltd. | Method of encapsulating a chip |
| JP2003086733A (ja) | 2001-09-11 | 2003-03-20 | Matsushita Electric Ind Co Ltd | 半導体装置とその製造方法およびそれを用いた電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200711072A (en) | 2007-03-16 |
| US20060244117A1 (en) | 2006-11-02 |
| WO2006118982A3 (en) | 2007-07-12 |
| KR20080073637A (ko) | 2008-08-11 |
| JP2008539599A (ja) | 2008-11-13 |
| WO2006118982A2 (en) | 2006-11-09 |
| TWI322489B (en) | 2010-03-21 |
| US7429786B2 (en) | 2008-09-30 |
| JP4503677B2 (ja) | 2010-07-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101120122B1 (ko) | 제 2 기판을 포함하며 상부면 및 하부면에서 노출된 기판표면들을 갖는 반도체 패키지 | |
| KR101213661B1 (ko) | 칩 스케일 패키지 및 제 2 기판을 포함하고 있으며 상부면및 하부면에서 노출된 기판 표면들을 갖는 반도체 어셈블리 | |
| KR101172527B1 (ko) | 상부면 및 하부면에서 노출된 기판 표면들을 갖는 반도체적층 패키지 어셈블리 | |
| US7394148B2 (en) | Module having stacked chip scale semiconductor packages | |
| US8970049B2 (en) | Multiple chip package module having inverted package stacked over die | |
| US7298033B2 (en) | Stack type ball grid array package and method for manufacturing the same | |
| US7763963B2 (en) | Stacked package semiconductor module having packages stacked in a cavity in the module substrate | |
| KR100493063B1 (ko) | 스택 반도체 칩 비지에이 패키지 및 그 제조방법 | |
| TWI469301B (zh) | 堆疊封裝間具有線接點互連之半導體多重封裝模組 | |
| KR20050074961A (ko) | 역전된 제 2 패키지를 구비한 반도체 적층형 멀티-패키지모듈 | |
| KR101473313B1 (ko) | 적층 패키지, 그의 제조 방법 및 적층 패키지를 갖는디지털 기기 | |
| KR100632476B1 (ko) | 멀티칩 패키지 및 이에 사용되는 반도체칩 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| A201 | Request for examination | ||
| E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| A302 | Request for accelerated examination | ||
| PA0302 | Request for accelerated examination |
St.27 status event code: A-1-2-D10-D17-exm-PA0302 St.27 status event code: A-1-2-D10-D16-exm-PA0302 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U12-oth-PR1002 Fee payment year number: 1 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| FPAY | Annual fee payment |
Payment date: 20150205 Year of fee payment: 4 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
| FPAY | Annual fee payment |
Payment date: 20160204 Year of fee payment: 5 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
|
| S20-X000 | Security interest recorded |
St.27 status event code: A-4-4-S10-S20-lic-X000 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| FPAY | Annual fee payment |
Payment date: 20170214 Year of fee payment: 6 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 6 |
|
| FPAY | Annual fee payment |
Payment date: 20180206 Year of fee payment: 7 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 7 |
|
| FPAY | Annual fee payment |
Payment date: 20190201 Year of fee payment: 8 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 8 |
|
| S22-X000 | Recordation of security interest cancelled |
St.27 status event code: A-4-4-S10-S22-lic-X000 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| FPAY | Annual fee payment |
Payment date: 20200212 Year of fee payment: 9 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 9 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 10 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 11 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 12 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 13 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 14 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R14-asn-PN2301 |