KR101108947B1 - 고밀도 3차원 집적 커패시터 - Google Patents

고밀도 3차원 집적 커패시터 Download PDF

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Publication number
KR101108947B1
KR101108947B1 KR1020110026686A KR20110026686A KR101108947B1 KR 101108947 B1 KR101108947 B1 KR 101108947B1 KR 1020110026686 A KR1020110026686 A KR 1020110026686A KR 20110026686 A KR20110026686 A KR 20110026686A KR 101108947 B1 KR101108947 B1 KR 101108947B1
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South Korea
Prior art keywords
opening
dielectric layer
metal element
electrode
extending
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Expired - Fee Related
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Korean (ko)
Inventor
베이그 오가네시안
벨가셈 하바
일야스 모하메드
피유시 사발리아
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테세라, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6616—Vertical connections, e.g. vias
    • H01L2223/6622—Coaxial feed-throughs in active or passive substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Ceramic Capacitors (AREA)
KR1020110026686A 2010-12-09 2011-03-25 고밀도 3차원 집적 커패시터 Expired - Fee Related KR101108947B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/964,049 US8502340B2 (en) 2010-12-09 2010-12-09 High density three-dimensional integrated capacitors
US12/964,049 2010-12-09

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR1020110104751A Division KR101188918B1 (ko) 2010-12-09 2011-10-13 고밀도 3차원 집적 커패시터
KR1020110104752A Division KR20120064611A (ko) 2010-12-09 2011-10-13 고밀도 3차원 집적 커패시터

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KR101108947B1 true KR101108947B1 (ko) 2012-02-08

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KR1020110026686A Expired - Fee Related KR101108947B1 (ko) 2010-12-09 2011-03-25 고밀도 3차원 집적 커패시터
KR1020137017548A Active KR101981149B1 (ko) 2010-12-09 2011-07-14 고밀도 3차원 집적 커패시터
KR1020110104752A Withdrawn KR20120064611A (ko) 2010-12-09 2011-10-13 고밀도 3차원 집적 커패시터
KR1020110104751A Expired - Fee Related KR101188918B1 (ko) 2010-12-09 2011-10-13 고밀도 3차원 집적 커패시터

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KR1020137017548A Active KR101981149B1 (ko) 2010-12-09 2011-07-14 고밀도 3차원 집적 커패시터
KR1020110104752A Withdrawn KR20120064611A (ko) 2010-12-09 2011-10-13 고밀도 3차원 집적 커패시터
KR1020110104751A Expired - Fee Related KR101188918B1 (ko) 2010-12-09 2011-10-13 고밀도 3차원 집적 커패시터

Country Status (7)

Country Link
US (5) US8502340B2 (enExample)
EP (3) EP2649639B1 (enExample)
JP (3) JP5895000B2 (enExample)
KR (4) KR101108947B1 (enExample)
CN (3) CN103348442B (enExample)
TW (1) TWI479522B (enExample)
WO (2) WO2012078213A1 (enExample)

Cited By (1)

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