KR101041419B1 - 패턴 형성 방법 - Google Patents

패턴 형성 방법 Download PDF

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KR101041419B1
KR101041419B1 KR1020080055461A KR20080055461A KR101041419B1 KR 101041419 B1 KR101041419 B1 KR 101041419B1 KR 1020080055461 A KR1020080055461 A KR 1020080055461A KR 20080055461 A KR20080055461 A KR 20080055461A KR 101041419 B1 KR101041419 B1 KR 101041419B1
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KR20080109672A (ko
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히데아키 츠바키
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후지필름 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020080055461A 2007-06-12 2008-06-12 패턴 형성 방법 Active KR101041419B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00155322 2007-06-12
JP2007155322A JP4590431B2 (ja) 2007-06-12 2007-06-12 パターン形成方法

Publications (2)

Publication Number Publication Date
KR20080109672A KR20080109672A (ko) 2008-12-17
KR101041419B1 true KR101041419B1 (ko) 2011-06-15

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KR1020080055461A Active KR101041419B1 (ko) 2007-06-12 2008-06-12 패턴 형성 방법

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US (2) US7998655B2 (enExample)
EP (1) EP2003505B1 (enExample)
JP (1) JP4590431B2 (enExample)
KR (1) KR101041419B1 (enExample)
TW (1) TWI341961B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101943860A (zh) * 2009-06-08 2011-01-12 罗门哈斯电子材料有限公司 平版印刷方法

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JP2006023699A (ja) 2004-06-09 2006-01-26 Fujitsu Ltd 多層体、レジストパターン形成方法、微細加工パターンを有する装置の製造方法および電子装置
KR20060049785A (ko) * 2004-07-02 2006-05-19 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. 침지 리소그래피 처리용 조성물 및 방법

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CN101943860A (zh) * 2009-06-08 2011-01-12 罗门哈斯电子材料有限公司 平版印刷方法

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US7998655B2 (en) 2011-08-16
US20090042147A1 (en) 2009-02-12
US8071272B2 (en) 2011-12-06
JP4590431B2 (ja) 2010-12-01
KR20080109672A (ko) 2008-12-17
US20110020755A1 (en) 2011-01-27
JP2008309878A (ja) 2008-12-25
EP2003505A3 (en) 2009-05-27
EP2003505A2 (en) 2008-12-17
EP2003505B1 (en) 2013-10-23

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