TWI341961B - Method of forming patterns - Google Patents

Method of forming patterns Download PDF

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Publication number
TWI341961B
TWI341961B TW097121644A TW97121644A TWI341961B TW I341961 B TWI341961 B TW I341961B TW 097121644 A TW097121644 A TW 097121644A TW 97121644 A TW97121644 A TW 97121644A TW I341961 B TWI341961 B TW I341961B
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TW
Taiwan
Prior art keywords
group
developer
solvent
resin
photoresist
Prior art date
Application number
TW097121644A
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English (en)
Chinese (zh)
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TW200910023A (en
Inventor
Hideaki Tsubaki
Original Assignee
Fujifilm Corp
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Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of TW200910023A publication Critical patent/TW200910023A/zh
Application granted granted Critical
Publication of TWI341961B publication Critical patent/TWI341961B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW097121644A 2007-06-12 2008-06-11 Method of forming patterns TWI341961B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007155322A JP4590431B2 (ja) 2007-06-12 2007-06-12 パターン形成方法

Publications (2)

Publication Number Publication Date
TW200910023A TW200910023A (en) 2009-03-01
TWI341961B true TWI341961B (en) 2011-05-11

Family

ID=39745017

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097121644A TWI341961B (en) 2007-06-12 2008-06-11 Method of forming patterns

Country Status (5)

Country Link
US (2) US7998655B2 (enExample)
EP (1) EP2003505B1 (enExample)
JP (1) JP4590431B2 (enExample)
KR (1) KR101041419B1 (enExample)
TW (1) TWI341961B (enExample)

Cited By (14)

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US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US10761427B2 (en) 2013-08-22 2020-09-01 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use

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US8530148B2 (en) * 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP4554665B2 (ja) 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
US8637229B2 (en) * 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
EP2138898B1 (en) * 2007-04-13 2014-05-21 FUJIFILM Corporation Method for pattern formation, and use of resist composition in said method
US8034547B2 (en) * 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
KR100989567B1 (ko) 2007-05-15 2010-10-25 후지필름 가부시키가이샤 패턴형성방법
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
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US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
JP4590431B2 (ja) 2007-06-12 2010-12-01 富士フイルム株式会社 パターン形成方法
KR101705670B1 (ko) 2007-06-12 2017-02-10 후지필름 가부시키가이샤 네가티브 톤 현상용 레지스트 조성물 및 이것을 사용한 패턴형성방법
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
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JP5557550B2 (ja) 2009-02-20 2014-07-23 富士フイルム株式会社 電子線又はｅｕｖ光を用いた有機溶剤系現像又は多重現像パターン形成方法
JP5601884B2 (ja) * 2009-06-04 2014-10-08 富士フイルム株式会社 感活性光線または感放射線性樹脂組成物を用いたパターン形成方法及びパターン
US10180627B2 (en) * 2009-06-08 2019-01-15 Rohm And Haas Electronic Materials Llc Processes for photolithography
KR20110058128A (ko) * 2009-11-25 2011-06-01 제일모직주식회사 레지스트 보호막용 고분자 및 이를 포함하는 레지스트 보호막 조성물
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JP5440468B2 (ja) 2010-01-20 2014-03-12 信越化学工業株式会社 パターン形成方法
JP5639795B2 (ja) * 2010-02-18 2014-12-10 東京応化工業株式会社 レジストパターン形成方法
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JP5387601B2 (ja) 2010-03-24 2014-01-15 信越化学工業株式会社 アセタール化合物、高分子化合物、レジスト材料及びパターン形成方法
JP5708082B2 (ja) * 2010-03-24 2015-04-30 信越化学工業株式会社 パターン形成方法及びネガ型レジスト組成物
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KR101041419B1 (ko) 2011-06-15
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US20090042147A1 (en) 2009-02-12
US7998655B2 (en) 2011-08-16
EP2003505A3 (en) 2009-05-27
KR20080109672A (ko) 2008-12-17
US20110020755A1 (en) 2011-01-27
TW200910023A (en) 2009-03-01
US8071272B2 (en) 2011-12-06

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