JP4590431B2 - パターン形成方法 - Google Patents

パターン形成方法 Download PDF

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Publication number
JP4590431B2
JP4590431B2 JP2007155322A JP2007155322A JP4590431B2 JP 4590431 B2 JP4590431 B2 JP 4590431B2 JP 2007155322 A JP2007155322 A JP 2007155322A JP 2007155322 A JP2007155322 A JP 2007155322A JP 4590431 B2 JP4590431 B2 JP 4590431B2
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Japan
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group
developer
resin
negative
acid
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JP2007155322A
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Japanese (ja)
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JP2008309878A (ja
JP2008309878A5 (enExample
Inventor
英明 椿
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2007155322A priority Critical patent/JP4590431B2/ja
Priority to EP08010600.8A priority patent/EP2003505B1/en
Priority to TW097121644A priority patent/TWI341961B/zh
Priority to US12/137,232 priority patent/US7998655B2/en
Priority to KR1020080055461A priority patent/KR101041419B1/ko
Publication of JP2008309878A publication Critical patent/JP2008309878A/ja
Publication of JP2008309878A5 publication Critical patent/JP2008309878A5/ja
Priority to US12/895,516 priority patent/US8071272B2/en
Application granted granted Critical
Publication of JP4590431B2 publication Critical patent/JP4590431B2/ja
Priority to US13/283,125 priority patent/US8617794B2/en
Priority to US14/083,816 priority patent/US8895225B2/en
Priority to US14/521,622 priority patent/US9176386B2/en
Priority to US14/859,794 priority patent/US9458343B2/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2007155322A 2007-06-12 2007-06-12 パターン形成方法 Active JP4590431B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2007155322A JP4590431B2 (ja) 2007-06-12 2007-06-12 パターン形成方法
EP08010600.8A EP2003505B1 (en) 2007-06-12 2008-06-11 Method of forming patterns
TW097121644A TWI341961B (en) 2007-06-12 2008-06-11 Method of forming patterns
US12/137,232 US7998655B2 (en) 2007-06-12 2008-06-11 Method of forming patterns
KR1020080055461A KR101041419B1 (ko) 2007-06-12 2008-06-12 패턴 형성 방법
US12/895,516 US8071272B2 (en) 2007-06-12 2010-09-30 Method of forming patterns
US13/283,125 US8617794B2 (en) 2007-06-12 2011-10-27 Method of forming patterns
US14/083,816 US8895225B2 (en) 2007-06-12 2013-11-19 Method of forming patterns
US14/521,622 US9176386B2 (en) 2007-06-12 2014-10-23 Method of forming patterns
US14/859,794 US9458343B2 (en) 2007-06-12 2015-09-21 Method of forming patterns

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007155322A JP4590431B2 (ja) 2007-06-12 2007-06-12 パターン形成方法

Publications (3)

Publication Number Publication Date
JP2008309878A JP2008309878A (ja) 2008-12-25
JP2008309878A5 JP2008309878A5 (enExample) 2010-08-05
JP4590431B2 true JP4590431B2 (ja) 2010-12-01

Family

ID=39745017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007155322A Active JP4590431B2 (ja) 2007-06-12 2007-06-12 パターン形成方法

Country Status (5)

Country Link
US (2) US7998655B2 (enExample)
EP (1) EP2003505B1 (enExample)
JP (1) JP4590431B2 (enExample)
KR (1) KR101041419B1 (enExample)
TW (1) TWI341961B (enExample)

Cited By (17)

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KR20130009695A (ko) 2011-07-14 2013-01-23 신에쓰 가가꾸 고교 가부시끼가이샤 패턴 형성 방법 및 레지스트 조성물
KR20130023141A (ko) 2011-08-26 2013-03-07 신에쓰 가가꾸 고교 가부시끼가이샤 패턴 형성 방법 및 레지스트 조성물
KR20140020779A (ko) 2012-08-10 2014-02-19 신에쓰 가가꾸 고교 가부시끼가이샤 단량체, 고분자 화합물, 레지스트 조성물 및 패턴 형성 방법
KR20140024220A (ko) 2012-08-20 2014-02-28 신에쓰 가가꾸 고교 가부시끼가이샤 패턴 형성 방법 및 레지스트 조성물
KR20140105377A (ko) 2013-02-22 2014-09-01 신에쓰 가가꾸 고교 가부시끼가이샤 단량체, 고분자 화합물, 레지스트 재료 및 패턴 형성 방법
US8822136B2 (en) 2011-10-27 2014-09-02 Shin-Etsu Chemical Co., Ltd. Patterning process and resist composition
US8865390B2 (en) 2011-09-16 2014-10-21 Shin-Etsu Chemical Co., Ltd. Patterning process and resist composition
US9081290B2 (en) 2012-06-19 2015-07-14 Shin-Etsu Chemical Co., Ltd. Patterning process and resist composition
KR20150096297A (ko) 2014-02-14 2015-08-24 삼성전자주식회사 패턴 형성 방법
US9122152B2 (en) 2012-07-09 2015-09-01 Shin-Etsu Chemicals Co., Ltd. Patterning process and resist composition
US9164384B2 (en) 2013-04-26 2015-10-20 Shin-Etsu Chemical Co., Ltd. Patterning process and resist composition
EP2950143A1 (en) 2014-05-28 2015-12-02 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US9235122B2 (en) 2013-01-15 2016-01-12 Shin-Etsu Chemical Co., Ltd. Monomer, polymer, resist composition, and patterning process
EP3088955A2 (en) 2015-04-28 2016-11-02 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US9519213B2 (en) 2013-03-05 2016-12-13 Shin-Etsu Chemical Co., Ltd. Patterning process and resist composition
US9551932B2 (en) 2013-01-28 2017-01-24 Shin-Etsu Chemical Co., Ltd. Patterning process and resist composition
KR20180002725A (ko) 2015-05-29 2018-01-08 후지필름 가부시키가이샤 패턴 형성 방법, 레지스트 패턴, 전자 디바이스의 제조 방법, 및 상층막 형성용 조성물

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US8530148B2 (en) * 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP4554665B2 (ja) * 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
US8637229B2 (en) * 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
KR100990106B1 (ko) * 2007-04-13 2010-10-29 후지필름 가부시키가이샤 패턴형성방법, 이 패턴형성방법에 사용되는 레지스트 조성물, 현상액 및 린스액
US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
US7985534B2 (en) 2007-05-15 2011-07-26 Fujifilm Corporation Pattern forming method
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
JP4617337B2 (ja) * 2007-06-12 2011-01-26 富士フイルム株式会社 パターン形成方法
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KR101452229B1 (ko) * 2007-06-12 2014-10-22 후지필름 가부시키가이샤 네가티브 톤 현상용 레지스트 조성물 및 이것을 사용한 패턴형성방법
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
JP5311331B2 (ja) * 2008-06-25 2013-10-09 ルネサスエレクトロニクス株式会社 液浸リソグラフィの現像処理方法および該現像処理方法を用いた電子デバイス
JP5639755B2 (ja) * 2008-11-27 2014-12-10 富士フイルム株式会社 有機溶剤を含有する現像液を用いたパターン形成方法及びこれに用いるリンス液
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US20090042147A1 (en) 2009-02-12
US8071272B2 (en) 2011-12-06
KR20080109672A (ko) 2008-12-17
TW200910023A (en) 2009-03-01
EP2003505A2 (en) 2008-12-17
JP2008309878A (ja) 2008-12-25
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US20110020755A1 (en) 2011-01-27
TWI341961B (en) 2011-05-11

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