KR100991115B1 - 부유법에 의한 수처리 장치 - Google Patents

부유법에 의한 수처리 장치 Download PDF

Info

Publication number
KR100991115B1
KR100991115B1 KR1020057019508A KR20057019508A KR100991115B1 KR 100991115 B1 KR100991115 B1 KR 100991115B1 KR 1020057019508 A KR1020057019508 A KR 1020057019508A KR 20057019508 A KR20057019508 A KR 20057019508A KR 100991115 B1 KR100991115 B1 KR 100991115B1
Authority
KR
South Korea
Prior art keywords
floating
water
cell
water treatment
modules
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020057019508A
Other languages
English (en)
Korean (ko)
Other versions
KR20050110712A (ko
Inventor
크리스티앙 뷸레
쟌 마르샹
마르코 보시시오
Original Assignee
옹데오 드그르몽
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 옹데오 드그르몽 filed Critical 옹데오 드그르몽
Publication of KR20050110712A publication Critical patent/KR20050110712A/ko
Application granted granted Critical
Publication of KR100991115B1 publication Critical patent/KR100991115B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/24—Treatment of water, waste water, or sewage by flotation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D21/00—Separation of suspended solid particles from liquids by sedimentation
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/40—Devices for separating or removing fatty or oily substances or similar floating material
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/52—Treatment of water, waste water, or sewage by flocculation or precipitation of suspended impurities
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2201/00—Apparatus for treatment of water, waste water or sewage
    • C02F2201/002—Construction details of the apparatus
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2201/00—Apparatus for treatment of water, waste water or sewage
    • C02F2201/46—Apparatus for electrochemical processes
    • C02F2201/461—Electrolysis apparatus
    • C02F2201/46105—Details relating to the electrolytic devices
    • C02F2201/46115—Electrolytic cell with membranes or diaphragms
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2209/00—Controlling or monitoring parameters in water treatment
    • C02F2209/02—Temperature
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2209/00—Controlling or monitoring parameters in water treatment
    • C02F2209/40—Liquid flow rate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Water Supply & Treatment (AREA)
  • Hydrology & Water Resources (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Led Devices (AREA)
  • Physical Water Treatments (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020057019508A 2003-03-20 2003-04-16 부유법에 의한 수처리 장치 Expired - Fee Related KR100991115B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003077703A JP2004288799A (ja) 2003-03-20 2003-03-20 半導体発光素子およびその製造方法、集積型半導体発光装置およびその製造方法、画像表示装置およびその製造方法ならびに照明装置およびその製造方法

Publications (2)

Publication Number Publication Date
KR20050110712A KR20050110712A (ko) 2005-11-23
KR100991115B1 true KR100991115B1 (ko) 2010-11-02

Family

ID=33027957

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020057019508A Expired - Fee Related KR100991115B1 (ko) 2003-03-20 2003-04-16 부유법에 의한 수처리 장치
KR1020047018168A Ceased KR20050106356A (ko) 2003-03-20 2004-02-19 반도체 발광소자 및 그 제조 방법, 집적형 반도체 발광장치 및 그 제조 방법, 화상 표시장치 및 그 제조 방법과조명 장치 및 그 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020047018168A Ceased KR20050106356A (ko) 2003-03-20 2004-02-19 반도체 발광소자 및 그 제조 방법, 집적형 반도체 발광장치 및 그 제조 방법, 화상 표시장치 및 그 제조 방법과조명 장치 및 그 제조 방법

Country Status (7)

Country Link
US (3) US7250320B2 (enExample)
EP (1) EP1605522A1 (enExample)
JP (1) JP2004288799A (enExample)
KR (2) KR100991115B1 (enExample)
CN (1) CN100442550C (enExample)
TW (1) TWI242892B (enExample)
WO (1) WO2004084318A1 (enExample)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6963086B2 (en) * 2001-10-10 2005-11-08 Sony Corporation Semiconductor light-emitting device image display illuminator and its manufacturing method
JP3900273B2 (ja) * 2002-09-04 2007-04-04 ソニー株式会社 光学式ヘッド装置及び情報処理装置
JP2004288799A (ja) * 2003-03-20 2004-10-14 Sony Corp 半導体発光素子およびその製造方法、集積型半導体発光装置およびその製造方法、画像表示装置およびその製造方法ならびに照明装置およびその製造方法
US6986693B2 (en) * 2003-03-26 2006-01-17 Lucent Technologies Inc. Group III-nitride layers with patterned surfaces
JP2006147679A (ja) * 2004-11-17 2006-06-08 Sony Corp 集積型発光ダイオード、集積型発光ダイオードの製造方法、発光ダイオードディスプレイおよび発光ダイオード照明装置
JP4140606B2 (ja) * 2005-01-11 2008-08-27 ソニー株式会社 ＧａＮ系半導体発光素子の製造方法
EP1727216B1 (en) * 2005-05-24 2019-04-24 LG Electronics, Inc. Rod type light emitting diode and method for fabricating the same
KR100649769B1 (ko) * 2005-12-28 2006-11-27 삼성전기주식회사 반도체 발광 다이오드 및 그 제조 방법
US7982205B2 (en) * 2006-01-12 2011-07-19 National Institute Of Advanced Industrial Science And Technology III-V group compound semiconductor light-emitting diode
JP2007220865A (ja) * 2006-02-16 2007-08-30 Sumitomo Chemical Co Ltd ３族窒化物半導体発光素子およびその製造方法
JP2007288139A (ja) * 2006-03-24 2007-11-01 Sumitomo Chemical Co Ltd モノシリック発光デバイス及びその駆動方法
US7952109B2 (en) * 2006-07-10 2011-05-31 Alcatel-Lucent Usa Inc. Light-emitting crystal structures
KR100826389B1 (ko) * 2006-08-09 2008-05-02 삼성전기주식회사 질화물 반도체 선택 성장방법, 질화물 발광소자 및제조방법
SG140473A1 (en) * 2006-08-16 2008-03-28 Tinggi Tech Private Ltd Improvements in external light efficiency of light emitting diodes
KR100755610B1 (ko) * 2006-09-12 2007-09-06 삼성전기주식회사 피라미드 구조를 갖는 질화물 반도체 발광소자 및 그 제조방법
WO2008073435A1 (en) * 2006-12-11 2008-06-19 The Regents Of The University Of California Lead frame for transparent and mirrorless light emitting diode
TW201448263A (zh) * 2006-12-11 2014-12-16 美國加利福尼亞大學董事會 透明發光二極體
EP2091862B1 (en) * 2006-12-22 2019-12-11 QuNano AB Elevated led and method of producing such
JP5453105B2 (ja) * 2006-12-22 2014-03-26 クナノ アーベー ナノ構造のｌｅｄ及びデバイス
CN101681813B (zh) 2007-01-12 2012-07-11 昆南诺股份有限公司 氮化物纳米线及其制造方法
KR101524319B1 (ko) * 2007-01-12 2015-06-10 큐나노 에이비 시준 리플렉터를 갖는 나노구조 ｌｅｄ 어레이
KR100905859B1 (ko) * 2007-12-17 2009-07-02 삼성전기주식회사 질화물 반도체 발광소자 및 그 제조 방법
KR101491139B1 (ko) * 2007-12-20 2015-02-06 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100956456B1 (ko) 2008-01-31 2010-05-06 주식회사 에피밸리 3족 질화물 반도체 발광소자
US8283677B2 (en) * 2008-03-28 2012-10-09 Panasonic Corporation Nitride semiconductor light-emitting device
JP4692581B2 (ja) * 2008-06-09 2011-06-01 ソニー株式会社 表示装置の製造方法および表示装置
KR20100024231A (ko) * 2008-08-25 2010-03-05 삼성전자주식회사 광추출 효율이 향상된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법
WO2010028146A2 (en) * 2008-09-08 2010-03-11 3M Innovative Properties Company Electrically pixelated luminescent device
JP4692602B2 (ja) * 2008-09-26 2011-06-01 住友電気工業株式会社 窒化ガリウム系エピタキシャルウエハ、およびエピタキシャルウエハを作製する方法
WO2010056596A2 (en) 2008-11-13 2010-05-20 3M Innovative Properties Company Electrically pixelated luminescent device incorporating optical elements
KR101047634B1 (ko) 2008-11-24 2011-07-07 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR20100073757A (ko) * 2008-12-23 2010-07-01 삼성전자주식회사 마이크로 로드를 이용한 발광소자 및 그 제조방법
CN102185070A (zh) * 2011-05-06 2011-09-14 西安神光安瑞光电科技有限公司 发光二极管及其制备方法
US8809875B2 (en) * 2011-11-18 2014-08-19 LuxVue Technology Corporation Micro light emitting diode
CN102593298B (zh) * 2012-03-15 2015-04-29 矽光光电科技（上海）有限公司 一种发光器件
EP2898547A4 (en) * 2012-09-18 2016-04-27 Glo Ab OPTOELECTRONIC STRUCTURE IN NANOPYRAMID SIZE AND METHOD FOR THE MANUFACTURE THEREOF
DE102012223986B4 (de) * 2012-12-20 2015-04-09 Forschungsverbund Berlin E.V. Template für laterales Überwachsen mindestens einer Gruppe-III-Nitrid-basierten Schicht
KR101554032B1 (ko) 2013-01-29 2015-09-18 삼성전자주식회사 나노구조 반도체 발광소자
KR101581438B1 (ko) * 2014-04-10 2015-12-31 (재)한국나노기술원 나노막대를 이용한 백색 발광소자의 제조방법 및 그에 의해 제조된 나노막대를 이용한 백색 발광소자
US10446728B2 (en) 2014-10-31 2019-10-15 eLux, Inc. Pick-and remove system and method for emissive display repair
US10418527B2 (en) 2014-10-31 2019-09-17 eLux, Inc. System and method for the fluidic assembly of emissive displays
US10236279B2 (en) 2014-10-31 2019-03-19 eLux, Inc. Emissive display with light management system
US10543486B2 (en) 2014-10-31 2020-01-28 eLux Inc. Microperturbation assembly system and method
US10381335B2 (en) 2014-10-31 2019-08-13 ehux, Inc. Hybrid display using inorganic micro light emitting diodes (uLEDs) and organic LEDs (OLEDs)
US10535640B2 (en) 2014-10-31 2020-01-14 eLux Inc. System and method for the fluidic assembly of micro-LEDs utilizing negative pressure
US10242977B2 (en) 2014-10-31 2019-03-26 eLux, Inc. Fluid-suspended microcomponent harvest, distribution, and reclamation
US10520769B2 (en) 2014-10-31 2019-12-31 eLux, Inc. Emissive display with printed light modification structures
US10319878B2 (en) 2014-10-31 2019-06-11 eLux, Inc. Stratified quantum dot phosphor structure
US10381332B2 (en) 2014-10-31 2019-08-13 eLux Inc. Fabrication method for emissive display with light management system
US9825202B2 (en) 2014-10-31 2017-11-21 eLux, Inc. Display with surface mount emissive elements
CN104795324A (zh) * 2015-02-06 2015-07-22 中山大学 一种三族氮化物肖特基势垒二极管的生长及制备方法
DE102015121554B4 (de) 2015-12-10 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
KR102555005B1 (ko) * 2016-11-24 2023-07-14 삼성전자주식회사 반도체 발광 소자 및 반도체 발광 소자의 제조 방법
KR101866220B1 (ko) * 2016-11-28 2018-06-12 주식회사 그렌텍 대용량 살균수 생성 시스템
CN107316922B (zh) * 2017-05-24 2018-12-25 太原理工大学 基于GaN六棱锥阵列的LED外延结构及其制备方法
JP7078045B2 (ja) 2017-07-18 2022-05-31 ソニーグループ株式会社 発光素子及び発光素子アレイ
US10593757B2 (en) 2018-04-25 2020-03-17 Globalfoundries Inc. Integrated circuits having converted self-aligned epitaxial etch stop
CN109411583B (zh) * 2018-11-01 2020-12-04 京东方科技集团股份有限公司 发光单元及其制造方法、显示装置
US20210217884A1 (en) * 2018-12-07 2021-07-15 Gan Systems Inc. GaN HEMT DEVICE STRUCTURE AND METHOD OF FABRICATION
US11387392B2 (en) 2018-12-25 2022-07-12 Nichia Corporation Light-emitting device and display device
JP7348520B2 (ja) 2018-12-25 2023-09-21 日亜化学工業株式会社 発光装置及び表示装置
US11302248B2 (en) 2019-01-29 2022-04-12 Osram Opto Semiconductors Gmbh U-led, u-led device, display and method for the same
CN111463330B (zh) * 2019-01-18 2022-07-29 成都辰显光电有限公司 微型发光二极管芯片及其制造方法与转移方法
DE112020000561A5 (de) 2019-01-29 2021-12-02 Osram Opto Semiconductors Gmbh Videowand, treiberschaltung, ansteuerungen und verfahren derselben
US11156759B2 (en) 2019-01-29 2021-10-26 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
US11271143B2 (en) 2019-01-29 2022-03-08 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
US11610868B2 (en) 2019-01-29 2023-03-21 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
JP7642549B2 (ja) 2019-02-11 2025-03-10 エイエムエス－オスラム インターナショナル ゲーエムベーハー 光電子構造素子、光電子配置構造体および方法
CN113574633B (zh) * 2019-03-18 2025-07-04 六边钻公司 半导体模板和制造方法
WO2020216549A1 (de) 2019-04-23 2020-10-29 Osram Opto Semiconductors Gmbh Led modul, led displaymodul und verfahren zu dessen herstellung
US11538852B2 (en) 2019-04-23 2022-12-27 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
CN109994579B (zh) * 2019-04-30 2020-12-25 成都辰显光电有限公司 微型led显示面板的制备方法和微型led显示面板
JP7608368B2 (ja) 2019-05-13 2025-01-06 エイエムエス－オスラム インターナショナル ゲーエムベーハー マルチチップ用キャリア構造体
JP7494215B2 (ja) 2019-05-23 2024-06-03 エイエムエス－オスラム インターナショナル ゲーエムベーハー 照明配置構造体、光誘導配置構造体およびそれらに関する方法
JP7594578B2 (ja) 2019-09-20 2024-12-04 エイエムエス－オスラム インターナショナル ゲーエムベーハー 光電子構造素子、半導体構造およびそれらに関する方法
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device
CN116420239B (zh) * 2020-11-18 2025-07-25 苏州晶湛半导体有限公司 半导体结构及其制作方法、发光器件及其制作方法
CN113097366B (zh) * 2021-03-24 2022-04-15 广东良友科技有限公司 一种倒装双面封装全周发光led支架及制备方法
CN119300570B (zh) * 2024-10-14 2025-11-21 南京信息工程大学 一种双出射方向的Micro-LED结构及其制备方法

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5692577A (en) 1979-12-26 1981-07-27 Fujitsu Ltd Lighttemittinggdiode display panel
JPS5745583A (en) 1980-09-01 1982-03-15 Tokyo Shibaura Electric Co Solid state light emitting display unit
JPS5752072A (en) 1980-09-16 1982-03-27 Tokyo Shibaura Electric Co Display unit
JPS5752071A (en) 1980-09-16 1982-03-27 Tokyo Shibaura Electric Co Display unit
JPS5752073A (en) 1980-09-16 1982-03-27 Tokyo Shibaura Electric Co Method of producing display unit
JPS5850577A (ja) 1981-09-22 1983-03-25 株式会社東芝 デイスプレイ装置
JPS61156780A (ja) 1984-12-28 1986-07-16 Toshiba Corp 発光素子整列組立体の製造方法
JPS63188938A (ja) 1987-01-31 1988-08-04 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体の気相成長方法
JP2577089B2 (ja) 1988-11-10 1997-01-29 日本板硝子株式会社 発光装置およびその駆動方法
EP0405757A3 (en) 1989-06-27 1991-01-30 Hewlett-Packard Company High efficiency light-emitting diode
US5177405A (en) * 1989-07-25 1993-01-05 Nippon Sheet Glass Co., Ltd. Self-scanning, light-emitting device
JPH0645648A (ja) * 1992-07-24 1994-02-18 Omron Corp 上面出射型半導体発光素子、ならびに当該発光素子を用いた光学検知装置、光学的情報処理装置及び発光装置。
JPH0667044A (ja) 1992-08-21 1994-03-11 Furukawa Electric Co Ltd:The 光回路・電気回路混載基板
JPH07199829A (ja) 1993-12-28 1995-08-04 Harrison Denki Kk 発光ユニットおよび表示装置ならびに照明装置
US5385866A (en) 1994-06-22 1995-01-31 International Business Machines Corporation Polish planarizing using oxidized boron nitride as a polish stop
US5814839A (en) * 1995-02-16 1998-09-29 Sharp Kabushiki Kaisha Semiconductor light-emitting device having a current adjusting layer and a uneven shape light emitting region, and method for producing same
JP3571401B2 (ja) 1995-03-16 2004-09-29 ローム株式会社 半導体発光素子の製法
JPH08288544A (ja) * 1995-04-14 1996-11-01 Toshiba Corp 半導体発光素子
JP3599896B2 (ja) * 1995-05-19 2004-12-08 三洋電機株式会社 半導体レーザ素子および半導体レーザ素子の製造方法
JPH09129974A (ja) 1995-10-27 1997-05-16 Hitachi Ltd 半導体レーザ素子
JP2830814B2 (ja) 1996-01-19 1998-12-02 日本電気株式会社 窒化ガリウム系化合物半導体の結晶成長方法、及び半導体レーザの製造方法
WO1997044615A1 (de) 1996-05-23 1997-11-27 Siemens Aktiengesellschaft Leuchteinrichtung für die signalabgabe auf sowie die kennzeichnung und markierung von verkehrsflächen von flughäfen
JP3809681B2 (ja) 1996-08-27 2006-08-16 セイコーエプソン株式会社 剥離方法
US5828088A (en) * 1996-09-05 1998-10-27 Astropower, Inc. Semiconductor device structures incorporating "buried" mirrors and/or "buried" metal electrodes
JP3139445B2 (ja) 1997-03-13 2001-02-26 日本電気株式会社 ＧａＮ系半導体の成長方法およびＧａＮ系半導体膜
JP3863962B2 (ja) 1997-03-25 2006-12-27 シャープ株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体発光素子とその製造方法
JPH10265297A (ja) 1997-03-26 1998-10-06 Shiro Sakai ＧａＮバルク単結晶の製造方法
JPH10321910A (ja) 1997-05-16 1998-12-04 Ricoh Co Ltd 半導体発光素子
JP3517091B2 (ja) * 1997-07-04 2004-04-05 東芝電子エンジニアリング株式会社 窒化ガリウム系半導体発光素子およびその製造方法
JPH1175019A (ja) 1997-09-01 1999-03-16 Nikon Corp 光源装置及び画像読取装置
JPH11177138A (ja) 1997-12-11 1999-07-02 Stanley Electric Co Ltd 面実装型装置およびこれを用いた発光装置または受光装置
US6091085A (en) 1998-02-19 2000-07-18 Agilent Technologies, Inc. GaN LEDs with improved output coupling efficiency
JPH11238687A (ja) 1998-02-20 1999-08-31 Ricoh Co Ltd 半導体基板および半導体発光素子
JP3876518B2 (ja) 1998-03-05 2007-01-31 日亜化学工業株式会社 窒化物半導体基板の製造方法および窒化物半導体基板
JP4083866B2 (ja) * 1998-04-28 2008-04-30 シャープ株式会社 半導体レーザ素子
JP4127426B2 (ja) 1998-05-29 2008-07-30 シチズン電子株式会社 チップ型半導体のパッケージ構造および製造方法
JP3196833B2 (ja) 1998-06-23 2001-08-06 日本電気株式会社 Ｉｉｉ−ｖ族化合物半導体の成長方法及びこの方法を用いた半導体発光素子の製造方法
TW418549B (en) * 1998-06-26 2001-01-11 Sharp Kk Crystal growth method for nitride semiconductor, nitride semiconductor light emitting device, and method for producing the same
JP2000068593A (ja) 1998-08-25 2000-03-03 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
JP2000150391A (ja) 1998-11-11 2000-05-30 Shiro Sakai 集束イオンビームのマスク加工による結晶の選択成長法
JP3796060B2 (ja) 1998-12-15 2006-07-12 三洋電機株式会社 半導体レーザ素子およびその製造方法
JP2000223417A (ja) 1999-01-28 2000-08-11 Sony Corp 半導体の成長方法、半導体基板の製造方法および半導体装置の製造方法
JP4573374B2 (ja) 1999-05-21 2010-11-04 シャープ株式会社 半導体発光装置の製造方法
JP4449113B2 (ja) 1999-09-10 2010-04-14 ソニー株式会社 ２次元表示装置
JP2001217503A (ja) 2000-02-03 2001-08-10 Matsushita Electric Ind Co Ltd ＧａＮ系半導体発光素子およびその製造方法
JP3882539B2 (ja) * 2000-07-18 2007-02-21 ソニー株式会社 半導体発光素子およびその製造方法、並びに画像表示装置
JP2002185660A (ja) 2000-12-11 2002-06-28 Canon Inc 画像通信装置
JP2002261327A (ja) * 2001-03-06 2002-09-13 Sony Corp 半導体発光素子及び半導体発光素子の製造方法
JP3899936B2 (ja) * 2002-01-18 2007-03-28 ソニー株式会社 半導体発光素子及びその製造方法
JP2004288799A (ja) * 2003-03-20 2004-10-14 Sony Corp 半導体発光素子およびその製造方法、集積型半導体発光装置およびその製造方法、画像表示装置およびその製造方法ならびに照明装置およびその製造方法

Also Published As

Publication number Publication date
CN1698213A (zh) 2005-11-16
US20070190677A1 (en) 2007-08-16
US7250320B2 (en) 2007-07-31
KR20050106356A (ko) 2005-11-09
CN100442550C (zh) 2008-12-10
WO2004084318A1 (ja) 2004-09-30
US20070187704A1 (en) 2007-08-16
TW200514279A (en) 2005-04-16
KR20050110712A (ko) 2005-11-23
EP1605522A1 (en) 2005-12-14
US20050145865A1 (en) 2005-07-07
TWI242892B (en) 2005-11-01
JP2004288799A (ja) 2004-10-14

Similar Documents

Publication Publication Date Title
KR100991115B1 (ko) 부유법에 의한 수처리 장치
AU2008290085B2 (en) Method of flocculating sedimentation treatment
US6264040B1 (en) Hindered-bed separator device and method
KR100938770B1 (ko) 부상에 의한 정수 처리 설비
US9387418B2 (en) Media bed filters for filtering fine particles from a raw liquid flow and method of using the same
US7445709B2 (en) Installation for treating water by floatation
GB2310148A (en) Backwashing of granular media filters
US11945733B2 (en) Method for treating a fluid by upflow through a bed of adsorbent media
US3846299A (en) Clarifying apparatus and method for influent waters
US4157962A (en) Filtration method and apparatus
KR101094188B1 (ko) 용존공기부상법을 이용한 수처리장치
US5779895A (en) Granular media filter including media settler assembly
HK1089150B (en) Installation for treating water by flotation
JPH04952Y2 (enExample)
PL209676B1 (pl) Flotownik do uzdatniania wody
JP2010524671A (ja) 穴あきプレートを備える浮選装置
RU2323160C2 (ru) Установка для обработки воды флотацией
JPH06134215A (ja) フロックブランケット型凝集沈殿装置
KR20170013000A (ko) 다단 여과장치 및 여과방법
JPS6038015A (ja) 渦流によるろ過方法及びその充填フインろ材
HK1073832B (en) Installation for treating water by means of flotation
JPS5843207A (ja) 「ろ」過方法及び「ろ」過装置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20131018

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20141017

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20151016

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20171027

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20171027

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000