KR100934590B1 - 하프톤 노광법을 사용한 액정표시장치의 제조법 - Google Patents

하프톤 노광법을 사용한 액정표시장치의 제조법 Download PDF

Info

Publication number
KR100934590B1
KR100934590B1 KR1020070042053A KR20070042053A KR100934590B1 KR 100934590 B1 KR100934590 B1 KR 100934590B1 KR 1020070042053 A KR1020070042053 A KR 1020070042053A KR 20070042053 A KR20070042053 A KR 20070042053A KR 100934590 B1 KR100934590 B1 KR 100934590B1
Authority
KR
South Korea
Prior art keywords
electrode
halftone
region
pixel electrode
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020070042053A
Other languages
English (en)
Korean (ko)
Other versions
KR20070111975A (ko
Inventor
사카에 다나카
토시유키 사메지마
Original Assignee
미쿠니 일렉트론 컴퍼니 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쿠니 일렉트론 컴퍼니 리미티드 filed Critical 미쿠니 일렉트론 컴퍼니 리미티드
Publication of KR20070111975A publication Critical patent/KR20070111975A/ko
Application granted granted Critical
Publication of KR100934590B1 publication Critical patent/KR100934590B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13625—Patterning using multi-mask exposure

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
KR1020070042053A 2006-05-19 2007-04-30 하프톤 노광법을 사용한 액정표시장치의 제조법 Expired - Fee Related KR100934590B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00166674 2006-05-19
JP2006166674A JP2007310334A (ja) 2006-05-19 2006-05-19 ハーフトーン露光法を用いた液晶表示装置の製造法

Publications (2)

Publication Number Publication Date
KR20070111975A KR20070111975A (ko) 2007-11-22
KR100934590B1 true KR100934590B1 (ko) 2009-12-31

Family

ID=38219337

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070042053A Expired - Fee Related KR100934590B1 (ko) 2006-05-19 2007-04-30 하프톤 노광법을 사용한 액정표시장치의 제조법

Country Status (6)

Country Link
US (1) US7602456B2 (enExample)
JP (1) JP2007310334A (enExample)
KR (1) KR100934590B1 (enExample)
CN (1) CN101075584B (enExample)
GB (1) GB2438490A (enExample)
TW (1) TW200744216A (enExample)

Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8382821B2 (en) 1998-12-03 2013-02-26 Medinol Ltd. Helical hybrid stent
US20040267349A1 (en) 2003-06-27 2004-12-30 Kobi Richter Amorphous metal alloy medical devices
US9039755B2 (en) 2003-06-27 2015-05-26 Medinol Ltd. Helical hybrid stent
US9155639B2 (en) 2009-04-22 2015-10-13 Medinol Ltd. Helical hybrid stent
TWI323622B (en) * 2004-09-30 2010-04-11 Watlow Electric Mfg Modular layered heater system
TWI255363B (en) * 2005-02-04 2006-05-21 Quanta Display Inc Liquid crystal display
JP4066440B2 (ja) * 2006-05-17 2008-03-26 トーヨーエイテック株式会社 ダイヤモンド様薄膜を備えた医療器具及びその製造方法
JP5477523B2 (ja) * 2006-06-15 2014-04-23 三国電子有限会社 低コスト大画面広視野角高速応答液晶表示装置
JP4524692B2 (ja) * 2007-07-25 2010-08-18 セイコーエプソン株式会社 基板の製造方法及び液晶表示装置の製造方法
US9439293B2 (en) * 2007-11-21 2016-09-06 Xerox Corporation Galvanic process for making printed conductive metal markings for chipless RFID applications
KR20090083197A (ko) 2008-01-29 2009-08-03 삼성전자주식회사 컬러필터기판의 제조 방법
KR101458208B1 (ko) * 2008-03-06 2014-11-04 엘지전자 주식회사 마스크리스 패턴 형성장치 및 패턴을 형성하는 방법
JP4807371B2 (ja) * 2008-03-27 2011-11-02 ソニー株式会社 液晶表示装置
CN101546733B (zh) * 2008-03-28 2011-07-27 北京京东方光电科技有限公司 Tft-lcd阵列基板和彩膜基板的制造方法
TWI373097B (en) * 2008-07-09 2012-09-21 Au Optronics Corp Method for fabricating thin film transistor array substrate
JP2010073819A (ja) * 2008-09-17 2010-04-02 Canon Inc 光電変換装置及び撮像システム
TWI373680B (en) * 2008-10-06 2012-10-01 Au Optronics Corp Fabricating method of pixel structure
WO2010046407A2 (en) * 2008-10-22 2010-04-29 Micronic Laser Systems Ab Multi-focus method of enhanced three-dimensional exposure of resist
TWI459436B (zh) * 2008-10-27 2014-11-01 Tpk Touch Solutions Inc The Method of Making Double - sided Graphic Structure of Touch Circuit
EP2202802B1 (en) 2008-12-24 2012-09-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
JP5294883B2 (ja) * 2009-01-05 2013-09-18 株式会社ジャパンディスプレイウェスト 液晶表示装置および電子機器
US20100224880A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20100119321A (ko) * 2009-04-30 2010-11-09 엘지디스플레이 주식회사 표시장치
KR101287478B1 (ko) * 2009-06-02 2013-07-19 엘지디스플레이 주식회사 산화물 박막트랜지스터를 구비한 표시소자 및 그 제조방법
TWI451584B (zh) * 2009-11-16 2014-09-01 Univ Nat Chiao Tung 一種非晶系氧化物半導體的光感測器裝置與其製作方法
JP5771365B2 (ja) * 2009-11-23 2015-08-26 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． 中小型液晶表示装置
KR101210146B1 (ko) 2010-04-05 2012-12-07 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
KR101350751B1 (ko) 2010-07-01 2014-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 구동 방법
KR20120038194A (ko) * 2010-10-13 2012-04-23 삼성전기주식회사 전도성 필름 및 그 제조방법
JP2012118199A (ja) 2010-11-30 2012-06-21 Panasonic Liquid Crystal Display Co Ltd 液晶パネル、液晶表示装置、及びその製造方法
KR101764902B1 (ko) 2010-12-06 2017-08-14 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조방법
JP2012181445A (ja) * 2011-03-02 2012-09-20 Seiko Epson Corp 電気装置
CN102637632B (zh) * 2011-06-10 2014-12-10 京东方科技集团股份有限公司 一种薄膜晶体管阵列的制作方法和薄膜晶体管阵列
GB2492972B (en) * 2011-07-15 2013-09-11 M Solv Ltd Method and apparatus for dividing a thin film device into separate cells
KR101938761B1 (ko) * 2012-05-23 2019-01-16 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판, 이를 포함하는 유기 발광 표시 장치 및 그 제조 방법
US9065077B2 (en) 2012-06-15 2015-06-23 Apple, Inc. Back channel etch metal-oxide thin film transistor and process
US8801948B2 (en) * 2012-07-02 2014-08-12 Apple Inc. TFT mask reduction
US8987027B2 (en) 2012-08-31 2015-03-24 Apple Inc. Two doping regions in lightly doped drain for thin film transistors and associated doping processes
US9685557B2 (en) 2012-08-31 2017-06-20 Apple Inc. Different lightly doped drain length control for self-align light drain doping process
US8999771B2 (en) 2012-09-28 2015-04-07 Apple Inc. Protection layer for halftone process of third metal
US9201276B2 (en) 2012-10-17 2015-12-01 Apple Inc. Process architecture for color filter array in active matrix liquid crystal display
US20140120657A1 (en) * 2012-10-30 2014-05-01 Apple Inc. Back Channel Etching Oxide Thin Film Transistor Process Architecture
JP5896889B2 (ja) * 2012-12-07 2016-03-30 株式会社豊田自動織機 光学選択膜
KR102011274B1 (ko) 2012-12-10 2019-08-19 삼성디스플레이 주식회사 표시 기판의 제조 방법
KR102370069B1 (ko) 2012-12-25 2022-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102241249B1 (ko) 2012-12-25 2021-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 저항 소자, 표시 장치, 및 전자기기
US9001297B2 (en) 2013-01-29 2015-04-07 Apple Inc. Third metal layer for thin film transistor with reduced defects in liquid crystal display
US9088003B2 (en) 2013-03-06 2015-07-21 Apple Inc. Reducing sheet resistance for common electrode in top emission organic light emitting diode display
CN103258827B (zh) * 2013-04-28 2016-03-23 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
KR102164941B1 (ko) * 2014-01-13 2020-10-14 삼성디스플레이 주식회사 박막 트랜지스터 기판, 이를 포함하는 표시 장치, 및 박막 트랜지스터 기판의 제조 방법
KR102183991B1 (ko) * 2014-09-15 2020-11-30 삼성디스플레이 주식회사 액정표시패널 및 이의 제조 방법
KR102380160B1 (ko) 2015-04-02 2022-03-29 삼성디스플레이 주식회사 액정 표시 장치
US10274787B2 (en) * 2015-04-17 2019-04-30 Sakai Display Products Corporation Liquid crystal display apparatus comprising a pixel electrode having a second opening part deflected from a central portion between two liquid crystal domains
CN113219749B (zh) * 2016-02-17 2023-01-10 群创光电股份有限公司 主动元件阵列基板以及显示面板
CN105609563B (zh) * 2016-03-10 2018-11-23 深圳市华星光电技术有限公司 薄膜晶体管及其制造方法
CN106773403A (zh) * 2016-12-29 2017-05-31 深圳市华星光电技术有限公司 像素单元结构及显示装置
JP6380597B1 (ja) * 2017-04-12 2018-08-29 Jnc株式会社 液晶表示素子
CN107146791B (zh) * 2017-05-11 2020-06-26 京东方科技集团股份有限公司 一种阵列基板的制作方法、阵列基板和显示装置
JP6844845B2 (ja) 2017-05-31 2021-03-17 三国電子有限会社 表示装置
CN108163803B (zh) * 2017-12-26 2023-05-26 中国计量大学 一种mems三维隧道结构
CN108198824B (zh) * 2018-01-17 2020-06-16 京东方科技集团股份有限公司 一种阵列基板的制备方法
CN108490709B (zh) * 2018-03-29 2021-06-01 武汉华星光电技术有限公司 阵列基板及其制作方法
CN108538859A (zh) * 2018-04-24 2018-09-14 深圳市华星光电技术有限公司 阵列基板的制作方法
WO2019211083A1 (en) * 2018-05-04 2019-11-07 Asml Netherlands B.V. Pellicle for euv lithography
JP7190729B2 (ja) 2018-08-31 2022-12-16 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子
JP7246681B2 (ja) 2018-09-26 2023-03-28 三国電子有限会社 トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置
US11062900B2 (en) * 2018-12-04 2021-07-13 Applied Materials, Inc. Method of reducing effective oxide thickness in a semiconductor structure
CN109768015B (zh) * 2019-01-29 2021-07-23 南京中电熊猫平板显示科技有限公司 一种阵列基板及其制造方法
JP7190740B2 (ja) 2019-02-22 2022-12-16 三国電子有限会社 エレクトロルミネセンス素子を有する表示装置
CN109659372B (zh) * 2019-03-13 2019-07-09 南京中电熊猫液晶显示科技有限公司 一种薄膜晶体管及其制造方法
CN109801929B (zh) * 2019-04-17 2019-07-16 南京中电熊猫平板显示科技有限公司 一种阵列基板及其制造方法
KR102806933B1 (ko) * 2019-05-20 2025-05-14 미쓰이금속광업주식회사 캐리어를 구비하는 금속박 그리고 그 사용 방법 및 제조 방법
CN110032011B (zh) * 2019-05-30 2022-08-19 京东方科技集团股份有限公司 一种狭缝电极的曝光方法
CN210403730U (zh) * 2019-10-22 2020-04-24 北京京东方技术开发有限公司 显示面板及阵列基板
JP7444436B2 (ja) 2020-02-05 2024-03-06 三国電子有限会社 液晶表示装置
US12478488B2 (en) 2020-02-19 2025-11-25 Medinol Ltd. Helical stent with enhanced crimping
CN111362590A (zh) * 2020-03-25 2020-07-03 四川猛犸半导体科技有限公司 一种薄膜器件
CN116057713A (zh) * 2020-08-06 2023-05-02 索尼半导体解决方案公司 半导体装置和电子设备
KR102552063B1 (ko) * 2020-12-23 2023-07-07 동우 화인켐 주식회사 전극 구조체, 이를 포함하는 터치 센서, 윈도우 적층체 및 화상 표시 장치
CN113690248B (zh) * 2021-07-28 2024-04-16 合肥鑫晟光电科技有限公司 阵列基板的制备方法、阵列基板和显示装置
CN114512500B (zh) * 2022-01-28 2025-08-29 昆山龙腾光电股份有限公司 阵列基板及其制作方法
KR20240119757A (ko) * 2023-01-30 2024-08-06 엘지디스플레이 주식회사 발광 표시장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050098123A (ko) * 2004-04-06 2005-10-11 엘지.필립스 엘시디 주식회사 구동회로 일체형 액정표시장치용 어레이 기판의 제조 방법
KR20060021530A (ko) * 2004-09-03 2006-03-08 비오이 하이디스 테크놀로지 주식회사 박막트랜지스터 액정표시장치의 어레이 기판 제조방법

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61181130A (ja) 1985-02-06 1986-08-13 Fujitsu Ltd パタ−ン形成方法
JP2594114B2 (ja) * 1988-05-31 1997-03-26 三洋電機株式会社 液晶表示パネル用電極基板の製造方法
JP2711020B2 (ja) * 1990-04-27 1998-02-10 三菱電機株式会社 液晶表示装置
JPH07230097A (ja) 1994-02-18 1995-08-29 Sanyo Electric Co Ltd 液晶表示装置
JPH10142633A (ja) * 1996-11-15 1998-05-29 Mitsubishi Electric Corp 薄膜トランジスタ集積装置およびその製造方法並びに液晶表示装置
JP3410617B2 (ja) 1996-11-29 2003-05-26 シャープ株式会社 薄膜のパターニング方法
JPH10290012A (ja) * 1997-04-14 1998-10-27 Nec Corp アクティブマトリクス型液晶表示装置およびその製造方法
JP2976948B2 (ja) 1997-10-06 1999-11-10 日本電気株式会社 液晶表示装置、その製造方法およびその駆動方法
JP4264675B2 (ja) 1998-08-17 2009-05-20 栄 田中 液晶表示装置とその製造方法
US6287899B1 (en) 1998-12-31 2001-09-11 Samsung Electronics Co., Ltd. Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same
TW509810B (en) 1999-07-19 2002-11-11 Chi Mei Electronics Corp Liquid crystal display with wide viewing angle
JP4190118B2 (ja) 1999-12-17 2008-12-03 三菱電機株式会社 半導体装置、液晶表示装置および半導体装置の製造方法
KR100325079B1 (ko) * 1999-12-22 2002-03-02 주식회사 현대 디스플레이 테크놀로지 고개구율 및 고투과율 액정표시장치의 제조방법
KR100322968B1 (ko) * 1999-12-22 2002-02-02 주식회사 현대 디스플레이 테크놀로지 프린지 필드 구동 액정 표시 장치의 제조방법
KR100500684B1 (ko) * 1999-12-29 2005-07-12 비오이 하이디스 테크놀로지 주식회사 ４-마스크 공정을 이용한 액정 디스플레이의 제조 방법
JP2001201756A (ja) * 2000-01-19 2001-07-27 Sakae Tanaka 液晶表示装置の製造方法と製造装置
JP2001311965A (ja) 2000-04-28 2001-11-09 Nec Corp アクティブマトリクス基板及びその製造方法
JP2002107762A (ja) * 2000-10-02 2002-04-10 Sharp Corp 液晶用マトリクス基板の製造方法
JP2002141512A (ja) * 2000-11-06 2002-05-17 Advanced Display Inc 薄膜のパターニング方法およびそれを用いたｔｆｔアレイ基板およびその製造方法
JP3831868B2 (ja) * 2001-08-13 2006-10-11 大林精工株式会社 アクティブマトリックス表示装置とその製造方法
KR100436181B1 (ko) * 2002-04-16 2004-06-12 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판 제조방법
JP4565799B2 (ja) 2002-07-01 2010-10-20 大林精工株式会社 横電界方式液晶表示装置、その製造方法、走査露光装置およびミックス走査露光装置
KR100789090B1 (ko) * 2002-12-30 2007-12-26 엘지.필립스 엘시디 주식회사 액정표시장치 제조방법
JP4522660B2 (ja) 2003-03-14 2010-08-11 シャープ株式会社 薄膜トランジスタ基板の製造方法
JP2004319655A (ja) * 2003-04-15 2004-11-11 Quanta Display Japan Inc 液晶表示装置とその製造方法
JP2005215276A (ja) * 2004-01-29 2005-08-11 Quanta Display Japan Inc 液晶表示装置とその製造方法
US6869833B1 (en) * 2004-03-16 2005-03-22 Quanta Display Inc. Method of manufacturing a thin film transistor of a liquid crystal display
KR101086478B1 (ko) * 2004-05-27 2011-11-25 엘지디스플레이 주식회사 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법
CN100357817C (zh) * 2004-11-29 2007-12-26 广辉电子股份有限公司 液晶显示装置及其制造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050098123A (ko) * 2004-04-06 2005-10-11 엘지.필립스 엘시디 주식회사 구동회로 일체형 액정표시장치용 어레이 기판의 제조 방법
KR20060021530A (ko) * 2004-09-03 2006-03-08 비오이 하이디스 테크놀로지 주식회사 박막트랜지스터 액정표시장치의 어레이 기판 제조방법

Also Published As

Publication number Publication date
GB2438490A (en) 2007-11-28
GB0709203D0 (en) 2007-06-20
KR20070111975A (ko) 2007-11-22
CN101075584A (zh) 2007-11-21
TW200744216A (en) 2007-12-01
CN101075584B (zh) 2012-12-26
US7602456B2 (en) 2009-10-13
JP2007310334A (ja) 2007-11-29
US20070269936A1 (en) 2007-11-22
TWI333280B (enExample) 2010-11-11

Similar Documents

Publication Publication Date Title
KR100934590B1 (ko) 하프톤 노광법을 사용한 액정표시장치의 제조법
TWI358589B (en) High quality and ultra large screen liquid crystal
KR101338115B1 (ko) 저저항 배선구조 및 이를 이용한 액정표시장치의 제조방법
CN101127358A (zh) 薄膜晶体管基板及其制造方法和具有其的显示设备
CN101089707A (zh) 低成本大画面广视野角高速回应液晶显示装置
US8730418B2 (en) Array substrate and method for manufacturing the same
CN101847641A (zh) 阵列基板及其制造方法和宽视角液晶显示器
US7906782B2 (en) Liquid crystal display device
KR20010062554A (ko) 액정표시장치 및 그 제조방법
KR20120072817A (ko) 액정 표시 장치 및 이의 제조 방법
KR0124976B1 (ko) 개구율 향상을 위한 액정표시장치 및 그 제조방법
KR101408257B1 (ko) 액정표시장치 및 그 제조방법
KR101604271B1 (ko) 횡전계방식 액정표시장치 및 그 제조방법
KR100963414B1 (ko) 액정표시소자 및 그 제조방법
KR20110012512A (ko) 횡전계방식 액정표시장치 및 그 제조방법
KR20120066517A (ko) 액정표시장치의 박막트랜지스터 및 그 제조방법
KR20080062930A (ko) 액정표시장치 및 그 제조방법
KR20080060944A (ko) 액정표시장치 및 그 제조방법

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20121223

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20121223

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000