TW200744216A - Method of manufacturing LCD apparatus by using halftone exposure method - Google Patents

Method of manufacturing LCD apparatus by using halftone exposure method

Info

Publication number
TW200744216A
TW200744216A TW096106310A TW96106310A TW200744216A TW 200744216 A TW200744216 A TW 200744216A TW 096106310 A TW096106310 A TW 096106310A TW 96106310 A TW96106310 A TW 96106310A TW 200744216 A TW200744216 A TW 200744216A
Authority
TW
Taiwan
Prior art keywords
electrode
halftone exposure
exposure technology
speed response
photolithographic process
Prior art date
Application number
TW096106310A
Other languages
English (en)
Other versions
TWI333280B (zh
Inventor
Sakae Tanaka
Toshiyuki Samejima
Original Assignee
Mikuni Electoron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mikuni Electoron Co Ltd filed Critical Mikuni Electoron Co Ltd
Publication of TW200744216A publication Critical patent/TW200744216A/zh
Application granted granted Critical
Publication of TWI333280B publication Critical patent/TWI333280B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13625—Patterning using multi-mask exposure

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
TW096106310A 2006-05-19 2007-02-16 Method of manufacturing LCD apparatus by using halftone exposure method TW200744216A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006166674A JP2007310334A (ja) 2006-05-19 2006-05-19 ハーフトーン露光法を用いた液晶表示装置の製造法

Publications (2)

Publication Number Publication Date
TW200744216A true TW200744216A (en) 2007-12-01
TWI333280B TWI333280B (zh) 2010-11-11

Family

ID=38219337

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096106310A TW200744216A (en) 2006-05-19 2007-02-16 Method of manufacturing LCD apparatus by using halftone exposure method

Country Status (6)

Country Link
US (1) US7602456B2 (zh)
JP (1) JP2007310334A (zh)
KR (1) KR100934590B1 (zh)
CN (1) CN101075584B (zh)
GB (1) GB2438490A (zh)
TW (1) TW200744216A (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI451584B (zh) * 2009-11-16 2014-09-01 Univ Nat Chiao Tung 一種非晶系氧化物半導體的光感測器裝置與其製作方法
TWI609221B (zh) * 2010-07-01 2017-12-21 半導體能源研究所股份有限公司 液晶顯示裝置的驅動方法
TWI746790B (zh) * 2017-04-12 2021-11-21 日商捷恩智股份有限公司 液晶顯示元件
TWI804203B (zh) * 2019-05-20 2023-06-01 日商三井金屬鑛業股份有限公司 附載體金屬箔以及其使用方法及製造方法

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8382821B2 (en) 1998-12-03 2013-02-26 Medinol Ltd. Helical hybrid stent
US20040267349A1 (en) 2003-06-27 2004-12-30 Kobi Richter Amorphous metal alloy medical devices
US9155639B2 (en) 2009-04-22 2015-10-13 Medinol Ltd. Helical hybrid stent
US9039755B2 (en) 2003-06-27 2015-05-26 Medinol Ltd. Helical hybrid stent
CN101061752B (zh) * 2004-09-30 2011-03-16 沃特洛电气制造公司 模块化的层状加热系统
TWI255363B (en) * 2005-02-04 2006-05-21 Quanta Display Inc Liquid crystal display
JP4066440B2 (ja) * 2006-05-17 2008-03-26 トーヨーエイテック株式会社 ダイヤモンド様薄膜を備えた医療器具及びその製造方法
JP5477523B2 (ja) * 2006-06-15 2014-04-23 三国電子有限会社 低コスト大画面広視野角高速応答液晶表示装置
JP4524692B2 (ja) * 2007-07-25 2010-08-18 セイコーエプソン株式会社 基板の製造方法及び液晶表示装置の製造方法
US9439293B2 (en) * 2007-11-21 2016-09-06 Xerox Corporation Galvanic process for making printed conductive metal markings for chipless RFID applications
KR20090083197A (ko) 2008-01-29 2009-08-03 삼성전자주식회사 컬러필터기판의 제조 방법
KR101458208B1 (ko) * 2008-03-06 2014-11-04 엘지전자 주식회사 마스크리스 패턴 형성장치 및 패턴을 형성하는 방법
JP4807371B2 (ja) * 2008-03-27 2011-11-02 ソニー株式会社 液晶表示装置
CN101546733B (zh) * 2008-03-28 2011-07-27 北京京东方光电科技有限公司 Tft-lcd阵列基板和彩膜基板的制造方法
TWI373097B (en) * 2008-07-09 2012-09-21 Au Optronics Corp Method for fabricating thin film transistor array substrate
JP2010073819A (ja) * 2008-09-17 2010-04-02 Canon Inc 光電変換装置及び撮像システム
TWI373680B (en) * 2008-10-06 2012-10-01 Au Optronics Corp Fabricating method of pixel structure
WO2010046407A2 (en) * 2008-10-22 2010-04-29 Micronic Laser Systems Ab Multi-focus method of enhanced three-dimensional exposure of resist
TWI459436B (zh) * 2008-10-27 2014-11-01 Tpk Touch Solutions Inc The Method of Making Double - sided Graphic Structure of Touch Circuit
EP2202802B1 (en) 2008-12-24 2012-09-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
JP5294883B2 (ja) 2009-01-05 2013-09-18 株式会社ジャパンディスプレイウェスト 液晶表示装置および電子機器
US20100224880A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20100119321A (ko) * 2009-04-30 2010-11-09 엘지디스플레이 주식회사 표시장치
KR101287478B1 (ko) * 2009-06-02 2013-07-19 엘지디스플레이 주식회사 산화물 박막트랜지스터를 구비한 표시소자 및 그 제조방법
JP5771365B2 (ja) * 2009-11-23 2015-08-26 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． 中小型液晶表示装置
KR101210146B1 (ko) 2010-04-05 2012-12-07 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
KR20120038194A (ko) * 2010-10-13 2012-04-23 삼성전기주식회사 전도성 필름 및 그 제조방법
JP2012118199A (ja) 2010-11-30 2012-06-21 Panasonic Liquid Crystal Display Co Ltd 液晶パネル、液晶表示装置、及びその製造方法
KR101764902B1 (ko) * 2010-12-06 2017-08-14 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조방법
JP2012181445A (ja) * 2011-03-02 2012-09-20 Seiko Epson Corp 電気装置
CN102637632B (zh) * 2011-06-10 2014-12-10 京东方科技集团股份有限公司 一种薄膜晶体管阵列的制作方法和薄膜晶体管阵列
GB2492972B (en) * 2011-07-15 2013-09-11 M Solv Ltd Method and apparatus for dividing a thin film device into separate cells
KR101938761B1 (ko) * 2012-05-23 2019-01-16 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판, 이를 포함하는 유기 발광 표시 장치 및 그 제조 방법
US9065077B2 (en) 2012-06-15 2015-06-23 Apple, Inc. Back channel etch metal-oxide thin film transistor and process
US8801948B2 (en) * 2012-07-02 2014-08-12 Apple Inc. TFT mask reduction
US9685557B2 (en) 2012-08-31 2017-06-20 Apple Inc. Different lightly doped drain length control for self-align light drain doping process
US8987027B2 (en) 2012-08-31 2015-03-24 Apple Inc. Two doping regions in lightly doped drain for thin film transistors and associated doping processes
US8999771B2 (en) 2012-09-28 2015-04-07 Apple Inc. Protection layer for halftone process of third metal
US9201276B2 (en) 2012-10-17 2015-12-01 Apple Inc. Process architecture for color filter array in active matrix liquid crystal display
US20140120657A1 (en) * 2012-10-30 2014-05-01 Apple Inc. Back Channel Etching Oxide Thin Film Transistor Process Architecture
JP5896889B2 (ja) * 2012-12-07 2016-03-30 株式会社豊田自動織機 光学選択膜
KR102011274B1 (ko) 2012-12-10 2019-08-19 삼성디스플레이 주식회사 표시 기판의 제조 방법
WO2014103900A1 (en) 2012-12-25 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102241249B1 (ko) 2012-12-25 2021-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 저항 소자, 표시 장치, 및 전자기기
US9001297B2 (en) 2013-01-29 2015-04-07 Apple Inc. Third metal layer for thin film transistor with reduced defects in liquid crystal display
US9088003B2 (en) 2013-03-06 2015-07-21 Apple Inc. Reducing sheet resistance for common electrode in top emission organic light emitting diode display
CN103258827B (zh) * 2013-04-28 2016-03-23 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
KR102164941B1 (ko) * 2014-01-13 2020-10-14 삼성디스플레이 주식회사 박막 트랜지스터 기판, 이를 포함하는 표시 장치, 및 박막 트랜지스터 기판의 제조 방법
KR102183991B1 (ko) * 2014-09-15 2020-11-30 삼성디스플레이 주식회사 액정표시패널 및 이의 제조 방법
KR102380160B1 (ko) 2015-04-02 2022-03-29 삼성디스플레이 주식회사 액정 표시 장치
WO2016166886A1 (ja) * 2015-04-17 2016-10-20 堺ディスプレイプロダクト株式会社 液晶表示装置
CN107092111B (zh) * 2016-02-17 2021-06-11 群创光电股份有限公司 主动元件阵列基板以及显示面板
CN105609563B (zh) * 2016-03-10 2018-11-23 深圳市华星光电技术有限公司 薄膜晶体管及其制造方法
CN106773403A (zh) * 2016-12-29 2017-05-31 深圳市华星光电技术有限公司 像素单元结构及显示装置
CN107146791B (zh) * 2017-05-11 2020-06-26 京东方科技集团股份有限公司 一种阵列基板的制作方法、阵列基板和显示装置
JP6844845B2 (ja) 2017-05-31 2021-03-17 三国電子有限会社 表示装置
CN108163803B (zh) * 2017-12-26 2023-05-26 中国计量大学 一种mems三维隧道结构
CN108198824B (zh) * 2018-01-17 2020-06-16 京东方科技集团股份有限公司 一种阵列基板的制备方法
CN108490709B (zh) * 2018-03-29 2021-06-01 武汉华星光电技术有限公司 阵列基板及其制作方法
CN108538859A (zh) * 2018-04-24 2018-09-14 深圳市华星光电技术有限公司 阵列基板的制作方法
JP7190729B2 (ja) 2018-08-31 2022-12-16 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子
JP7246681B2 (ja) 2018-09-26 2023-03-28 三国電子有限会社 トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置
US11062900B2 (en) * 2018-12-04 2021-07-13 Applied Materials, Inc. Method of reducing effective oxide thickness in a semiconductor structure
CN109768015B (zh) * 2019-01-29 2021-07-23 南京中电熊猫平板显示科技有限公司 一种阵列基板及其制造方法
JP7190740B2 (ja) 2019-02-22 2022-12-16 三国電子有限会社 エレクトロルミネセンス素子を有する表示装置
CN109659372B (zh) * 2019-03-13 2019-07-09 南京中电熊猫液晶显示科技有限公司 一种薄膜晶体管及其制造方法
CN109801929B (zh) * 2019-04-17 2019-07-16 南京中电熊猫平板显示科技有限公司 一种阵列基板及其制造方法
CN110032011B (zh) * 2019-05-30 2022-08-19 京东方科技集团股份有限公司 一种狭缝电极的曝光方法
CN210403730U (zh) * 2019-10-22 2020-04-24 北京京东方技术开发有限公司 显示面板及阵列基板
JP7444436B2 (ja) 2020-02-05 2024-03-06 三国電子有限会社 液晶表示装置
KR102552063B1 (ko) * 2020-12-23 2023-07-07 동우 화인켐 주식회사 전극 구조체, 이를 포함하는 터치 센서, 윈도우 적층체 및 화상 표시 장치
CN113690248B (zh) * 2021-07-28 2024-04-16 合肥鑫晟光电科技有限公司 阵列基板的制备方法、阵列基板和显示装置

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61181130A (ja) 1985-02-06 1986-08-13 Fujitsu Ltd パタ−ン形成方法
JP2594114B2 (ja) * 1988-05-31 1997-03-26 三洋電機株式会社 液晶表示パネル用電極基板の製造方法
JP2711020B2 (ja) * 1990-04-27 1998-02-10 三菱電機株式会社 液晶表示装置
JPH07230097A (ja) 1994-02-18 1995-08-29 Sanyo Electric Co Ltd 液晶表示装置
JPH10142633A (ja) * 1996-11-15 1998-05-29 Mitsubishi Electric Corp 薄膜トランジスタ集積装置およびその製造方法並びに液晶表示装置
JP3410617B2 (ja) 1996-11-29 2003-05-26 シャープ株式会社 薄膜のパターニング方法
JPH10290012A (ja) * 1997-04-14 1998-10-27 Nec Corp アクティブマトリクス型液晶表示装置およびその製造方法
JP2976948B2 (ja) 1997-10-06 1999-11-10 日本電気株式会社 液晶表示装置、その製造方法およびその駆動方法
JP4264675B2 (ja) 1998-08-17 2009-05-20 栄 田中 液晶表示装置とその製造方法
US6287899B1 (en) 1998-12-31 2001-09-11 Samsung Electronics Co., Ltd. Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same
TW509810B (en) 1999-07-19 2002-11-11 Chi Mei Electronics Corp Liquid crystal display with wide viewing angle
JP4190118B2 (ja) 1999-12-17 2008-12-03 三菱電機株式会社 半導体装置、液晶表示装置および半導体装置の製造方法
KR100325079B1 (ko) * 1999-12-22 2002-03-02 주식회사 현대 디스플레이 테크놀로지 고개구율 및 고투과율 액정표시장치의 제조방법
KR100322968B1 (ko) * 1999-12-22 2002-02-02 주식회사 현대 디스플레이 테크놀로지 프린지 필드 구동 액정 표시 장치의 제조방법
KR100500684B1 (ko) * 1999-12-29 2005-07-12 비오이 하이디스 테크놀로지 주식회사 ４-마스크 공정을 이용한 액정 디스플레이의 제조 방법
JP2001201756A (ja) * 2000-01-19 2001-07-27 Sakae Tanaka 液晶表示装置の製造方法と製造装置
JP2001311965A (ja) * 2000-04-28 2001-11-09 Nec Corp アクティブマトリクス基板及びその製造方法
JP2002107762A (ja) * 2000-10-02 2002-04-10 Sharp Corp 液晶用マトリクス基板の製造方法
JP2002141512A (ja) 2000-11-06 2002-05-17 Advanced Display Inc 薄膜のパターニング方法およびそれを用いたｔｆｔアレイ基板およびその製造方法
JP3831868B2 (ja) * 2001-08-13 2006-10-11 大林精工株式会社 アクティブマトリックス表示装置とその製造方法
KR100436181B1 (ko) * 2002-04-16 2004-06-12 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판 제조방법
JP4565799B2 (ja) 2002-07-01 2010-10-20 大林精工株式会社 横電界方式液晶表示装置、その製造方法、走査露光装置およびミックス走査露光装置
KR100789090B1 (ko) * 2002-12-30 2007-12-26 엘지.필립스 엘시디 주식회사 액정표시장치 제조방법
JP4522660B2 (ja) 2003-03-14 2010-08-11 シャープ株式会社 薄膜トランジスタ基板の製造方法
JP2004319655A (ja) * 2003-04-15 2004-11-11 Quanta Display Japan Inc 液晶表示装置とその製造方法
JP2005215276A (ja) * 2004-01-29 2005-08-11 Quanta Display Japan Inc 液晶表示装置とその製造方法
US6869833B1 (en) * 2004-03-16 2005-03-22 Quanta Display Inc. Method of manufacturing a thin film transistor of a liquid crystal display
KR100584716B1 (ko) * 2004-04-06 2006-05-29 엘지.필립스 엘시디 주식회사 구동회로 일체형 액정표시장치용 어레이 기판의 제조 방법
KR101086478B1 (ko) * 2004-05-27 2011-11-25 엘지디스플레이 주식회사 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법
KR20060021530A (ko) * 2004-09-03 2006-03-08 비오이 하이디스 테크놀로지 주식회사 박막트랜지스터 액정표시장치의 어레이 기판 제조방법
CN100357817C (zh) * 2004-11-29 2007-12-26 广辉电子股份有限公司 液晶显示装置及其制造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI451584B (zh) * 2009-11-16 2014-09-01 Univ Nat Chiao Tung 一種非晶系氧化物半導體的光感測器裝置與其製作方法
TWI609221B (zh) * 2010-07-01 2017-12-21 半導體能源研究所股份有限公司 液晶顯示裝置的驅動方法
US10008169B2 (en) 2010-07-01 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
TWI746790B (zh) * 2017-04-12 2021-11-21 日商捷恩智股份有限公司 液晶顯示元件
TWI804203B (zh) * 2019-05-20 2023-06-01 日商三井金屬鑛業股份有限公司 附載體金屬箔以及其使用方法及製造方法

Also Published As

Publication number Publication date
JP2007310334A (ja) 2007-11-29
US20070269936A1 (en) 2007-11-22
TWI333280B (zh) 2010-11-11
CN101075584A (zh) 2007-11-21
CN101075584B (zh) 2012-12-26
US7602456B2 (en) 2009-10-13
GB2438490A (en) 2007-11-28
KR20070111975A (ko) 2007-11-22
KR100934590B1 (ko) 2009-12-31
GB0709203D0 (en) 2007-06-20

Similar Documents

Publication Publication Date Title
TW200744216A (en) Method of manufacturing LCD apparatus by using halftone exposure method
TW200802890A (en) Low-cost large-screen wide-angle fast-response liquid crystal display apparatus
TW200743216A (en) Liquid crystal display fabrication method
EP2713385B1 (en) Active layer ion implantation method for thin-film transistor
TW200727487A (en) Structure of thin film transistor array and method for making the same
US20160315197A1 (en) Thin-film transistor, preparation method thereof, array substrate and display device
TW200951592A (en) Array substrate for liquid crystal display device and method of fabricating the same
TW200746441A (en) Manufacturing method of thin film transistor and thin film transistor, and display
TWI319624B (en) Method for manufacturing thin film transistor substrate using maskless exposing device
TW200608576A (en) Method for fabricating organic thin film transistor and method for fabricating liquid crystal display device using the same
WO2009117438A3 (en) Process to make metal oxide thin film transistor array with etch stopping layer
GB2456712A (en) Method of forming a semiconductor structure comprising a field effect transistor having a stressed channel region
TW200721500A (en) Liquid crystal display device and method for fabricating the same
TW200708870A (en) Manufacturing method of liquid crystal display
TW200642088A (en) Thin film transistor, thin film transistor panel, and method of manufacturing the same
TW200627642A (en) Methods of manufacturing a thin film transistor and a display
FR2860918B1 (fr) Procede de fabrication d'un substrat de matrice de transistors a couche mince
US8975124B2 (en) Thin film transistor, array substrate and preparation method thereof
TW200419811A (en) Method of fabricating a thin film transistor array panel
US10340365B2 (en) Method of manufacturing a thin film transistor
TW200628876A (en) Liquid crystal display
CN101364603A (zh) 一种tft阵列基板结构及其制造方法
TW200510891A (en) Method of manufacturing thin film transistor array panel and liquid crystal display
TW200802887A (en) Liquid crystal display and method for fabricating the same
TW200724709A (en) A method for forming a mask pattern for ion-implantation