TW200727487A - Structure of thin film transistor array and method for making the same - Google Patents

Structure of thin film transistor array and method for making the same

Info

Publication number
TW200727487A
TW200727487A TW095101181A TW95101181A TW200727487A TW 200727487 A TW200727487 A TW 200727487A TW 095101181 A TW095101181 A TW 095101181A TW 95101181 A TW95101181 A TW 95101181A TW 200727487 A TW200727487 A TW 200727487A
Authority
TW
Taiwan
Prior art keywords
layer
gate
thin film
film transistor
transistor array
Prior art date
Application number
TW095101181A
Other languages
Chinese (zh)
Other versions
TWI275183B (en
Inventor
Yu-Cheng Chen
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW095101181A priority Critical patent/TWI275183B/en
Priority to US11/309,009 priority patent/US7537973B2/en
Application granted granted Critical
Publication of TWI275183B publication Critical patent/TWI275183B/en
Publication of TW200727487A publication Critical patent/TW200727487A/en
Priority to US12/333,313 priority patent/US7863616B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Abstract

A method for making a thin film transistor array is provided. The method includes following steps. A substrate having a gate metal layer, a gate insulating layer and a silicon layer formed thereon is provided. The substrate with said layers is patterned to define a gate area, gate line and a gate line contact area. A passivation is formed on the substrate and then patterned, so that partial area of the passivation layer over gate line and the passivation layer over the gate line contact area is removed and two contact holes are formed within the passivation layer at the gate area. An ion implanting layer and a metal layer are formed on entire substrate. Then, the ion implanting layer and the metal layer are patterned to form a source region, a drain region, data line, data line contact area and a second layer of gate line contact area. A pixel electrode is then formed on the passivation layer to electrically connected to the drain region. Therefore, the thin film transistor array can be formed by using only four masks.
TW095101181A 2006-01-12 2006-01-12 Structure of thin film transistor array and method for making the same TWI275183B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW095101181A TWI275183B (en) 2006-01-12 2006-01-12 Structure of thin film transistor array and method for making the same
US11/309,009 US7537973B2 (en) 2006-01-12 2006-06-08 Method for fabricating structure of thin film transistor array
US12/333,313 US7863616B2 (en) 2006-01-12 2008-12-12 Structure of thin film transistor array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095101181A TWI275183B (en) 2006-01-12 2006-01-12 Structure of thin film transistor array and method for making the same

Publications (2)

Publication Number Publication Date
TWI275183B TWI275183B (en) 2007-03-01
TW200727487A true TW200727487A (en) 2007-07-16

Family

ID=38233220

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095101181A TWI275183B (en) 2006-01-12 2006-01-12 Structure of thin film transistor array and method for making the same

Country Status (2)

Country Link
US (2) US7537973B2 (en)
TW (1) TWI275183B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007088722A1 (en) * 2006-01-31 2007-08-09 Idemitsu Kosan Co., Ltd. Tft substrate, reflective tft substrate and method for manufacturing such substrates
US8357937B2 (en) * 2006-12-19 2013-01-22 Lg Display Co., Ltd. Thin film transistor liquid crystal display device
TWI331401B (en) * 2007-04-12 2010-10-01 Au Optronics Corp Method for fabricating a pixel structure and the pixel structure
JP5527966B2 (en) * 2007-12-28 2014-06-25 株式会社半導体エネルギー研究所 Thin film transistor
KR101392162B1 (en) * 2008-02-15 2014-05-08 삼성디스플레이 주식회사 Display substrate and method of manufacturing thereof
KR101451375B1 (en) * 2008-04-30 2014-10-21 삼성디스플레이 주식회사 Display substrate and method of fabricating the same
KR101533391B1 (en) * 2008-08-06 2015-07-02 삼성디스플레이 주식회사 A thin film transistor substrate and a fabricating method of the same
KR101636998B1 (en) * 2010-02-12 2016-07-08 삼성디스플레이 주식회사 Thin Film Transistor and Method to Fabricate the Same
US8791463B2 (en) * 2010-04-21 2014-07-29 Sharp Kabushiki Kaisha Thin-film transistor substrate
US9019440B2 (en) 2011-01-21 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8900938B2 (en) * 2012-07-02 2014-12-02 Shenzhen China Star Optoelectronics Technology Co., Ltd. Manufacturing method of array substrate, array substrate and LCD device
CN104091810A (en) * 2014-06-30 2014-10-08 京东方科技集团股份有限公司 Array substrate, manufacturing method thereof and display device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1055215C (en) * 1995-04-12 2000-08-09 李晓军 Ginkgo wine and preparation method thereof
KR100204071B1 (en) * 1995-08-29 1999-06-15 구자홍 Tft-lcd device and fabrication method thereof
US6259119B1 (en) * 1997-12-18 2001-07-10 Lg. Philips Lcd Co, Ltd. Liquid crystal display and method of manufacturing the same
TW462135B (en) 2000-08-04 2001-11-01 Acer Display Tech Inc Method for manufacturing the electronic device of thin film transistor display
CN1174480C (en) 2000-11-24 2004-11-03 友达光电股份有限公司 Technology for manufacturing flat display with film transistors
CN1240117C (en) 2001-09-20 2006-02-01 友达光电股份有限公司 Method for manufacturing film transistor plane indicator
US6956234B2 (en) * 2001-11-30 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Passive matrix display device

Also Published As

Publication number Publication date
US20090090912A1 (en) 2009-04-09
US20070161160A1 (en) 2007-07-12
TWI275183B (en) 2007-03-01
US7537973B2 (en) 2009-05-26
US7863616B2 (en) 2011-01-04

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees