CN108538859A - 阵列基板的制作方法 - Google Patents
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Abstract
本发明提供一种阵列基板的制作方法，在采用第一光罩对栅极绝缘层进行图案化处理形成位于OLB区域内的数个第一导电过孔时，通过增大第一光罩上相邻两第一过孔图案的间距至10μm以上，从而在栅极绝缘层上制作第一导电过孔时降低灰阶光罩效应的影响，使得第一光阻过孔孔壁的坡度较为缓和，从而使得第一导电过孔孔壁的坡度也较为缓和，后续沉积形成钝化层时，使得钝化层在第一导电过孔的孔壁上爬坡容易而不断开，进而使得第二金属层在第一导电过孔处能够被钝化层完全覆盖而避免被氧化。
Description
技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板的制作方法。
背景技术
主动式薄膜晶体管液晶显示器(Thin Film Transistor-LCD，TFT-LCD)近年来得到了飞速的发展和广泛的应用。通常液晶显示面板由彩膜(Color Filter，CF)基板、薄膜晶体管(Thin Film Transistor，TFT)阵列基板、夹于彩膜基板与薄膜晶体管基板之间的液晶(Liquid Crystal，LC)及密封框胶(Sealant)组成；其工作原理是通过在两片玻璃基板上施加驱动电压来控制液晶层的液晶分子的旋转，将背光模组的光线折射出来产生画面。
液晶显示面板在正常显示时，需要使用外接电路，如柔性电路板(Free PascalCompiler，FPC)、或者覆晶薄膜(Chip On Film，COF)，通过引线连接到面板的外引脚贴合(Outer Lead Bonding，OLB)区域，实现对显示面板中的各信号线传递驱动信号。而外接电路与显示面板的OLB区域的电连接是通过绑定(Bonding)工艺完成的，Bonding工艺主要是在压合设备上将外接电路经过预压、本压连接到显示面板上，将外接电路上的外接电极和显示面板上的电极线通过异方性导电胶(Anisotropic Conductive Film，ACF)压合到一起。
在TFT阵列基板的制作过程中，通常需要在其OLB区域通过黄光工艺对栅极绝缘层(GI)进行挖孔，用来搭接第二金属层(M2)和第一金属层(M1)，或者像素电极层和第一金属层。在实际生产过程中，发明人发现，第二金属层(M2)上的钝化层(PV)在栅极绝缘层的过孔处很容易发生破损而导致下方的第二金属层露出而氧化，进而影响整个TFT阵列基板的性能，究其原因，由于栅极绝缘层上相邻两过孔间的设计距离较小，通过光罩(Mask)进行曝光时，光罩上对应形成过孔的图案边缘相互影响而造成灰阶光罩效应(Gray Tone Maskeffect，GTM effect)，从而导致栅极绝缘层上方光阻层过孔的孔壁坡度较陡，进而导致经蚀刻栅极绝缘层所形成的过孔的孔壁坡度也较陡，后续沉积形成钝化层时，钝化层在栅极绝缘层的过孔处爬坡时容易断开，进而第二金属层露出而被氧化。
发明内容
本发明的目的在于提供一种阵列基板的制作方法，通过增大第一光罩上相邻第一过孔图案的间距，在栅极绝缘层上制作第一导电过孔时降低灰阶光罩效应的影响，使得第二金属层在第一导电过孔处能够被钝化层完全覆盖而避免被氧化。
为实现上述目的，本发明提供一种阵列基板的制作方法，所述阵列基板包括位于中央的显示区域及位于显示区域外围的OLB区域，该阵列基板的制作方法包括如下步骤：
步骤S1、提供衬底基板，在所述衬底基板上沉积并图案化形成第一金属层，所述第一金属层具有位于OLB区域内的数条平行设置的第一金属导线；
步骤S2、在所述衬底基板上形成覆盖第一金属层的栅极绝缘层，在所述栅极绝缘层上涂布形成第一光阻层，提供第一光罩，采用第一光罩对所述第一光阻层进行曝光显影，在所述第一光阻层上形成一一对应于所述数条第一金属导线上方的数个第一光阻过孔，所述第一光罩具有用于对应形成数个第一光阻过孔的数个第一过孔图案，相邻两第一过孔图案之间的距离大于10μm；
步骤S3、以所述第一光阻层为遮蔽层，对所述栅极绝缘层进行蚀刻处理，在所述栅极绝缘层上形成对应于所述数个第一光阻过孔下方的数个第一导电过孔并对应露出所述数条第一金属导线，除去第一光阻层；
步骤S4、在所述栅极绝缘层上沉积并图案化形成第二金属层，所述第二金属层具有数条与所述数条第一金属导线一一对应的第二金属导线，所述第二金属导线通过所述第一导电过孔与对应的第一金属导线相接触；
步骤S5、在所述栅极绝缘层上形成覆盖第二金属层的钝化层。
所述步骤S2中，所述第一光罩上相邻两第一过孔图案之间的距离为10-12μm。
所述步骤S1中形成的所述第一金属层还具有位于OLB区域内的数条平行设置的第三金属导线，所述第一金属导线与第三金属导线间隔设置；
该阵列基板的制作方法还包括；
步骤S6、在所述钝化层上形成第二光阻层，提供第二光罩，采用第二光罩对所述第二光阻层进行曝光显影，在所述第二光阻层上形成一一对应于所述数条第三金属导线上方的数个第二光阻过孔，所述第二光罩具有用于对应形成数个第二光阻过孔的数个第二过孔图案，相邻两第二过孔图案之间的距离大于10μm；
步骤S7、以所述第二光阻层为遮蔽层，对所述钝化层和栅极绝缘层进行蚀刻处理，在所述钝化层和栅极绝缘层上形成对应于所述数个第二光阻过孔下方的数个第二导电过孔并对应露出所述数条第三金属导线，除去第二光阻层；
步骤S8、在所述钝化层上图案化形成透明导电层，所述透明导电层具有数条与所述第三金属导线一一对应的透明导线，所述透明导线通过所述第二导电过孔与对应的第三金属导线相接触。
所述步骤S6中，所述第二光罩上相邻两第二过孔图案之间的距离为10-12μm。
所述步骤S8中所形成的透明导电层的材料为ITO。
所述步骤S2中，采用化学气相沉积法形成所述栅极绝缘层，所述栅极绝缘层的材料为氮化硅或氧化硅。
所述步骤S5中，采用化学气相沉积法形成所述钝化层，所述钝化层的材料为氮化硅或氧化硅。
所述第一金属层和第二金属层均为铜层或含铜材料层。
所述第一金属层和第二金属层分别为栅极金属层和源漏极金属层中的一种。
所述阵列基板为IGZO型TFT阵列基板。
本发明的有益效果：本发明的阵列基板的制作方法在衬底基板上依次形成第一金属层和栅极绝缘层，所述第一金属层具有位于OLB区域内的数条平行设置的第一金属导线，然后采用第一光罩对所述栅极绝缘层进行图案化处理，形成数个第一导电过孔并对应露出所述数条第一金属导线，所述第一光罩用于形成所述数个第一导电过孔的数个第一过孔图案中相邻两第一过孔图案之间的距离大于10μm，最后在所述栅极绝缘层上沉积并图案化形成第二金属层，在所述栅极绝缘层上形成覆盖第二金属层的钝化层，本发明通过增大第一光罩上相邻两第一过孔图案的间距至10μm以上，在栅极绝缘层上制作第一导电过孔时降低灰阶光罩效应的影响，使得第一光阻过孔孔壁的坡度较为缓和，从而使得第一导电过孔孔壁的坡度也较为缓和，后续沉积形成钝化层时，钝化层在第一导电过孔的孔壁上爬坡容易而不断开，进而使得第二金属层在第一导电过孔处能够被钝化层完全覆盖而避免被氧化。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。
附图中，
图1为本发明的阵列基板的制作方法的流程示意图；
图2为本发明的阵列基板的制作方法的步骤S1的示意图；
图3为本发明的阵列基板的制作方法的步骤S2的示意图；
图4为本发明的阵列基板的制作方法的步骤S3的示意图；
图5为本发明的阵列基板的制作方法的步骤S4的示意图；
图6为本发明的阵列基板的制作方法的步骤S5的示意图；
图7为本发明的阵列基板的制作方法的步骤S6的示意图；
图8为本发明的阵列基板的制作方法的步骤S7的示意图；
图9为本发明的阵列基板的制作方法的步骤S8的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明首先提供一种阵列基板的制作方法，所述阵列基板包括位于中央的显示区域及位于显示区域外围的OLB区域，该阵列基板的制作方法具体包括如下步骤：
步骤S1、如图2所示，提供衬底基板1，在所述衬底基板1上沉积并图案化形成第一金属层2，所述第一金属层2在所述OLB区域具有数条平行设置的第一金属导线21和数条平行设置的第三金属导线23。
具体地，所述第一金属导线21和第三金属导线23间隔设置，分别用于后续连接不同的结构层。
步骤S2、如图3所示，在所述衬底基板1上形成覆盖第一金属层2的栅极绝缘层3，在所述栅极绝缘层3上涂布形成第一光阻层91，提供第一光罩81，采用第一光罩81对所述第一光阻层91进行曝光显影，在所述第一光阻层91上形成一一对应于所述数条第一金属导线21上方的数个第一光阻过孔95，所述第一光罩81具有用于对应形成数个第一光阻过孔95的数个第一过孔图案85，相邻两第一过孔图案85之间的距离大于10μm，从而降低GTM效应的影响。
具体地，所述步骤S2中，所述第一光罩81上相邻两第一过孔图案85之间的距离为10-12μm。
具体地，所述步骤S2中，采用化学气相沉积法(Chemical Vapour Deposition，CVD)形成所述栅极绝缘层3，所述栅极绝缘层3的材料为氮化硅(SiNx)或氧化硅(SiO2)。
步骤S3、如图4所示，以所述第一光阻层91为遮蔽层，对所述栅极绝缘层3进行蚀刻处理，在所述栅极绝缘层3上形成对应于所述数个第一光阻过孔95下方的数个第一导电过孔35并对应露出所述数条第一金属导线21，除去第一光阻层91。
步骤S4、如图5所示，在所述栅极绝缘层3上沉积并图案化形成第二金属层4，所述第二金属层4具有与所述数条第一金属导线21一一对应的数条第二金属导线41，所述第二金属导线41通过所述第一导电过孔35与对应的第一金属导线21相接触。
步骤S5、如图6所示，在所述栅极绝缘层3上形成覆盖第二金属层4的钝化层5。
具体地，所述步骤S5中，采用化学气相沉积法形成所述钝化层5，所述钝化层5的材料为氮化硅或氧化硅。
步骤S6、如图7所示，在所述钝化层5上形成第二光阻层92，提供第二光罩82，采用第二光罩82对所述第二光阻层92进行曝光显影，在所述第二光阻层92上形成一一对应于所述数条第三金属导线23上方的数个第二光阻过孔96，所述第二光罩82具有用于对应形成数个第二光阻过孔96的数个第二过孔图案86，相邻两第二过孔图案86之间的距离大于10μm，从而在采用第二光罩82进行图案化工艺时降低GTM效应的影响。
具体地，所述步骤S6中，所述第二光罩82上相邻两第二过孔图案86之间的距离为10-12μm。
步骤S7、如图8所示，以所述第二光阻层92为遮蔽层，对所述钝化层5和栅极绝缘层3进行蚀刻处理，在所述钝化层5和栅极绝缘层3上形成对应于所述数个第二光阻过孔96下方的数个第二导电过孔36并对应露出所述数条第三金属导线23，除去第二光阻层92。
步骤S8、如图9所示，在所述钝化层5上图案化形成透明导电层6，所述透明导电层6具有数条与所述第三金属导线23一一对应的透明导线61，所述透明导线61通过所述第二导电过孔35与对应的第三金属导线23相接触。
具体地，所述步骤S8中所形成的透明导电层6的材料为ITO(氧化铟锡)。
具体地，所述第一金属层2和第二金属层4均为铜层或含铜材料层。
具体地，所述第一金属层2和第二金属层4分别为栅极金属层和源漏极金属层中的一种，其中，所述栅极金属层在显示区域具有多条相平行的栅极线及多个TFT器件的栅极，所述源漏极金属层在显示区域具有与栅极线垂直交叉的多条数据线及多个TFT器件的源极和漏极。
具体地，所述阵列基板为IGZO(铟镓锌氧化物)型TFT阵列基板，其上的TFT器件为IGZO型TFT器件。
本发明的阵列基板的制作方法通过增大第一光罩81上相邻两第一过孔图案85的间距至10μm以上，在栅极绝缘层3上制作第一导电过孔35时降低GTM效应的影响，使得第一导电过孔35孔壁的坡度较为缓和，后续沉积形成钝化层5时，使得钝化层5在第一导电过孔35的孔壁上爬坡容易而不断开，进而使得第二金属层2在第一导电过孔35处能够被钝化层5完全覆盖而避免被氧化。
需要说明的是，发明人通过三组实验对本发明的技术效果进行了验证，该三组实验分为实验组、第一对照组和第二对照组，在实验组、第一对照组和第二对照组中将所述第一光罩81上相邻两第一过孔图案85之间的距离分别设置为8μm、10μm和12μm，实验组、第一对照组和第二对照组中的其他步骤与上述实施例相同。通过实验发现，实验组中第一光阻过孔95会明显受到GTM效应的影响，第一光阻过孔95孔壁的坡度较陡，因此蚀刻得到的第一导电过孔35孔壁的坡度也较陡，导致沉积形成钝化层5时钝化层5会在第一导电过孔35处发生断裂，进而导致第二金属层4在第一导电过孔35处被氧化而形成氧化铜；而在第一对照组中，由于相邻两第一过孔图案85之间距离增大到10μm，因此在图案化栅极绝缘层3，受到GTM效应的影响较小，使得第一光阻过孔95孔壁的坡度较缓，因此蚀刻得到的第一导电过孔35孔壁的坡度也较缓，后续钝化层5时在第一导电过孔35处可以将第二金属层4完全盖住而避免第二金属层4被氧化；在第二对照组中，相邻的两第一过孔图案85之间距离增大到12μm，发明人发现，此时在图案化栅极绝缘层3而形成第一导电过孔35时，GTM效应完全消失。
综上所述，本发明的阵列基板的制作方法在衬底基板上依次形成第一金属层和栅极绝缘层，所述第一金属层具有位于OLB区域内的数条平行设置的第一金属导线，然后采用第一光罩对所述栅极绝缘层进行图案化处理，形成数个第一导电过孔并对应露出所述数条第一金属导线，所述第一光罩用于形成所述数个第一导电过孔的数个第一过孔图案中，相邻两第一过孔图案之间的距离大于10μm，最后在所述栅极绝缘层上沉积并图案化形成第二金属层，在所述栅极绝缘层上形成覆盖第二金属层的钝化层，本发明通过增大第一光罩上相邻两第一过孔图案的间距至10μm以上，在栅极绝缘层上制作第一导电过孔时降低灰阶光罩效应的影响，使得第一光阻过孔孔壁的坡度较为缓和，从而使得第一导电过孔孔壁的坡度也较为缓和，后续沉积形成钝化层时，钝化层在第一导电过孔的孔壁上爬坡容易而不断开，进而使得第二金属层在第一导电过孔处能够被钝化层完全覆盖而避免被氧化。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。
Claims (10)
1.一种阵列基板的制作方法，所述阵列基板包括位于中央的显示区域及位于显示区域外围的OLB区域，其特征在于，包括如下步骤：
步骤S1、提供衬底基板(1)，在所述衬底基板(1)上沉积并图案化形成第一金属层(2)，所述第一金属层(2)具有位于OLB区域内的数条平行设置的第一金属导线(21)；
步骤S2、在所述衬底基板(1)上形成覆盖第一金属层(2)的栅极绝缘层(3)，在所述栅极绝缘层(3)上涂布形成第一光阻层(91)，提供第一光罩(81)，采用第一光罩(81)对所述第一光阻层(91)进行曝光显影，在所述第一光阻层(91)上形成一一对应于所述数条第一金属导线(21)上方的数个第一光阻过孔(95)，所述第一光罩(81)具有用于对应形成数个第一光阻过孔(95)的数个第一过孔图案(85)，相邻两第一过孔图案(85)之间的距离大于10μm；
步骤S3、以所述第一光阻层(91)为遮蔽层，对所述栅极绝缘层(3)进行蚀刻处理，在所述栅极绝缘层(3)上形成对应于所述数个第一光阻过孔(95)下方的数个第一导电过孔(35)并对应露出所述数条第一金属导线(21)，除去第一光阻层(91)；
步骤S4、在所述栅极绝缘层(3)上沉积并图案化形成第二金属层(4)，所述第二金属层(4)具有数条与所述数条第一金属导线(21)一一对应的第二金属导线(41)，所述第二金属导线(41)通过所述第一导电过孔(35)与对应的第一金属导线(21)相接触；
步骤S5、在所述栅极绝缘层(3)上形成覆盖第二金属层(4)的钝化层(5)。
2.如权利要求1所述的阵列基板的制作方法，其特征在于，所述步骤S2中，所述第一光罩(81)上相邻两第一过孔图案(85)之间的距离为10-12μm。
3.如权利要求1所述的阵列基板的制作方法，其特征在于，所述步骤S1中形成的所述第一金属层(2)还具有位于OLB区域内的数条平行设置的第三金属导线(23)，所述第一金属导线(21)与第三金属导线(23)间隔设置；
该阵列基板的制作方法还包括；
步骤S6、在所述钝化层(5)上形成第二光阻层(92)，提供第二光罩(82)，采用第二光罩(82)对所述第二光阻层(92)进行曝光显影，在所述第二光阻层(92)上形成一一对应于所述数条第三金属导线(23)上方的数个第二光阻过孔(96)，所述第二光罩(82)具有用于对应形成数个第二光阻过孔(96)的数个第二过孔图案(86)，相邻两第二过孔图案(86)之间的距离大于10μm；
步骤S7、以所述第二光阻层(92)为遮蔽层，对所述钝化层(5)和栅极绝缘层(3)进行蚀刻处理，在所述钝化层(5)和栅极绝缘层(3)上形成对应于所述数个第二光阻过孔(96)下方的数个第二导电过孔(36)并对应露出所述数条第三金属导线(23)，除去第二光阻层(92)；
步骤S8、在所述钝化层(5)上图案化形成透明导电层(6)，所述透明导电层(6)具有数条与所述第三金属导线(23)一一对应的透明导线(61)，所述透明导线(61)通过所述第二导电过孔(35)与对应的第三金属导线(23)相接触。
4.如权利要求3所述的阵列基板的制作方法，其特征在于，所述步骤S6中，所述第二光罩(82)上相邻两第二过孔图案(86)之间的距离为10-12μm。
5.如权利要求3所述的阵列基板的制作方法，其特征在于，所述步骤S8中所形成的透明导电层(6)的材料为ITO。
6.如权利要求1所述的阵列基板的制作方法，其特征在于，所述步骤S2中，采用化学气相沉积法形成所述栅极绝缘层(3)，所述栅极绝缘层(3)的材料为氮化硅或氧化硅。
7.如权利要求1所述的阵列基板的制作方法，其特征在于，所述步骤S5中，采用化学气相沉积法形成所述钝化层(5)，所述钝化层(5)的材料为氮化硅或氧化硅。
8.如权利要求1所述的阵列基板的制作方法，其特征在于，所述第一金属层(2)和第二金属层(4)均为铜层或含铜材料层。
9.如权利要求1所述的阵列基板的制作方法，其特征在于，所述第一金属层(2)和第二金属层(4)分别为栅极金属层和源漏极金属层中的一种。
10.如权利要求1所述的阵列基板的制作方法，其特征在于，所述阵列基板为IGZO型TFT阵列基板。
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| WO2019205433A1 (zh) | 2019-10-31 |
| US10790320B2 (en) | 2020-09-29 |
| US20200168643A1 (en) | 2020-05-28 |
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