TWI333280B - - Google Patents
Download PDFInfo
- Publication number
- TWI333280B TWI333280B TW096106310A TW96106310A TWI333280B TW I333280 B TWI333280 B TW I333280B TW 096106310 A TW096106310 A TW 096106310A TW 96106310 A TW96106310 A TW 96106310A TW I333280 B TWI333280 B TW I333280B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- layer
- film
- exposure
- metal
- Prior art date
Links
- 238000000034 method Methods 0.000 claims abstract description 841
- 239000010410 layer Substances 0.000 claims abstract description 826
- 230000008569 process Effects 0.000 claims abstract description 376
- 239000000758 substrate Substances 0.000 claims abstract description 329
- 238000004519 manufacturing process Methods 0.000 claims abstract description 210
- 239000011159 matrix material Substances 0.000 claims abstract description 146
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 116
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 103
- 238000000576 coating method Methods 0.000 claims abstract description 56
- 238000002161 passivation Methods 0.000 claims abstract description 42
- 238000000151 deposition Methods 0.000 claims abstract description 35
- 230000000873 masking effect Effects 0.000 claims abstract description 12
- 230000004044 response Effects 0.000 claims abstract description 10
- 238000005516 engineering process Methods 0.000 claims abstract 5
- 239000010408 film Substances 0.000 claims description 776
- 229910052751 metal Inorganic materials 0.000 claims description 384
- 239000002184 metal Substances 0.000 claims description 384
- 229920002120 photoresistant polymer Polymers 0.000 claims description 374
- 239000010409 thin film Substances 0.000 claims description 253
- 239000004973 liquid crystal related substance Substances 0.000 claims description 209
- 238000000206 photolithography Methods 0.000 claims description 202
- 239000004065 semiconductor Substances 0.000 claims description 160
- 239000007789 gas Substances 0.000 claims description 124
- 239000003990 capacitor Substances 0.000 claims description 108
- 239000004020 conductor Substances 0.000 claims description 103
- 238000012937 correction Methods 0.000 claims description 82
- 239000000956 alloy Substances 0.000 claims description 80
- 229910045601 alloy Inorganic materials 0.000 claims description 79
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 77
- 238000005530 etching Methods 0.000 claims description 73
- 230000015572 biosynthetic process Effects 0.000 claims description 69
- -1 nitrogen ion Chemical class 0.000 claims description 68
- 230000000717 retained effect Effects 0.000 claims description 68
- 238000001459 lithography Methods 0.000 claims description 66
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 61
- 229910052719 titanium Inorganic materials 0.000 claims description 60
- 239000010936 titanium Substances 0.000 claims description 60
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 56
- 229910000838 Al alloy Inorganic materials 0.000 claims description 55
- 238000005121 nitriding Methods 0.000 claims description 53
- 238000004544 sputter deposition Methods 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 48
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 44
- 229910052760 oxygen Inorganic materials 0.000 claims description 44
- 239000001301 oxygen Substances 0.000 claims description 44
- 239000011521 glass Substances 0.000 claims description 43
- 230000004888 barrier function Effects 0.000 claims description 42
- 125000006850 spacer group Chemical group 0.000 claims description 42
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 39
- 229910052786 argon Inorganic materials 0.000 claims description 39
- 229910052750 molybdenum Inorganic materials 0.000 claims description 39
- 239000011733 molybdenum Substances 0.000 claims description 39
- 229910004205 SiNX Inorganic materials 0.000 claims description 37
- 230000003647 oxidation Effects 0.000 claims description 37
- 238000007254 oxidation reaction Methods 0.000 claims description 37
- 150000004767 nitrides Chemical class 0.000 claims description 35
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 34
- 239000011248 coating agent Substances 0.000 claims description 33
- 239000011261 inert gas Substances 0.000 claims description 32
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 31
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 30
- 239000001307 helium Substances 0.000 claims description 30
- 229910052734 helium Inorganic materials 0.000 claims description 30
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 30
- 238000009832 plasma treatment Methods 0.000 claims description 29
- 150000002500 ions Chemical class 0.000 claims description 27
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 27
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 24
- 238000004380 ashing Methods 0.000 claims description 24
- 238000001312 dry etching Methods 0.000 claims description 24
- 230000005611 electricity Effects 0.000 claims description 24
- 238000000059 patterning Methods 0.000 claims description 24
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 23
- 238000000926 separation method Methods 0.000 claims description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- 239000012535 impurity Substances 0.000 claims description 21
- 210000002858 crystal cell Anatomy 0.000 claims description 20
- 229910052804 chromium Inorganic materials 0.000 claims description 19
- 239000011651 chromium Substances 0.000 claims description 19
- 230000001133 acceleration Effects 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 18
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 18
- 239000010931 gold Substances 0.000 claims description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 17
- 229910021529 ammonia Inorganic materials 0.000 claims description 17
- 229910052737 gold Inorganic materials 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 239000004332 silver Substances 0.000 claims description 17
- 230000005684 electric field Effects 0.000 claims description 16
- 238000005476 soldering Methods 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 15
- 238000009751 slip forming Methods 0.000 claims description 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 14
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 14
- 210000004027 cell Anatomy 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 229910052715 tantalum Inorganic materials 0.000 claims description 14
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 14
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 13
- 238000011161 development Methods 0.000 claims description 13
- 239000007769 metal material Substances 0.000 claims description 13
- 229910052726 zirconium Inorganic materials 0.000 claims description 13
- 238000009413 insulation Methods 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 238000006116 polymerization reaction Methods 0.000 claims description 12
- 229910052707 ruthenium Inorganic materials 0.000 claims description 12
- 238000002834 transmittance Methods 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 11
- 229910052732 germanium Inorganic materials 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 11
- 229910010421 TiNx Inorganic materials 0.000 claims description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 230000006378 damage Effects 0.000 claims description 9
- 230000014759 maintenance of location Effects 0.000 claims description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims description 9
- 150000004706 metal oxides Chemical class 0.000 claims description 9
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 9
- 229910000679 solder Inorganic materials 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 125000004429 atom Chemical group 0.000 claims description 8
- 239000002585 base Substances 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 8
- 230000009467 reduction Effects 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 7
- 244000126211 Hericium coralloides Species 0.000 claims description 7
- 238000005452 bending Methods 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- 238000000354 decomposition reaction Methods 0.000 claims description 6
- 239000007772 electrode material Substances 0.000 claims description 6
- 238000002309 gasification Methods 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 230000003064 anti-oxidating effect Effects 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 239000002689 soil Substances 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000003086 colorant Substances 0.000 claims description 4
- 239000011229 interlayer Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000012360 testing method Methods 0.000 claims description 4
- 241000283690 Bos taurus Species 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 238000012423 maintenance Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 239000000049 pigment Substances 0.000 claims description 3
- 229920002098 polyfluorene Polymers 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 230000007306 turnover Effects 0.000 claims description 3
- 208000003251 Pruritus Diseases 0.000 claims description 2
- 230000007547 defect Effects 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 230000033001 locomotion Effects 0.000 claims description 2
- 230000033116 oxidation-reduction process Effects 0.000 claims description 2
- 230000002265 prevention Effects 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- 230000001568 sexual effect Effects 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims 15
- 230000008439 repair process Effects 0.000 claims 13
- 238000005406 washing Methods 0.000 claims 8
- 239000002356 single layer Substances 0.000 claims 7
- 229910008328 ZrNx Inorganic materials 0.000 claims 4
- 238000001035 drying Methods 0.000 claims 4
- STOOUUMSJPLRNI-UHFFFAOYSA-N 5-amino-4-hydroxy-3-[[4-[4-[(4-hydroxyphenyl)diazenyl]phenyl]phenyl]diazenyl]-6-[(4-nitrophenyl)diazenyl]naphthalene-2,7-disulfonic acid Chemical compound OS(=O)(=O)C1=CC2=CC(S(O)(=O)=O)=C(N=NC=3C=CC(=CC=3)C=3C=CC(=CC=3)N=NC=3C=CC(O)=CC=3)C(O)=C2C(N)=C1N=NC1=CC=C([N+]([O-])=O)C=C1 STOOUUMSJPLRNI-UHFFFAOYSA-N 0.000 claims 3
- KCZFLPPCFOHPNI-UHFFFAOYSA-N alumane;iron Chemical compound [AlH3].[Fe] KCZFLPPCFOHPNI-UHFFFAOYSA-N 0.000 claims 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 3
- 238000000746 purification Methods 0.000 claims 3
- 238000010301 surface-oxidation reaction Methods 0.000 claims 3
- 229910052770 Uranium Inorganic materials 0.000 claims 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 2
- ZXTFQUMXDQLMBY-UHFFFAOYSA-N alumane;molybdenum Chemical compound [AlH3].[Mo] ZXTFQUMXDQLMBY-UHFFFAOYSA-N 0.000 claims 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 229910052743 krypton Inorganic materials 0.000 claims 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052754 neon Inorganic materials 0.000 claims 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 2
- 150000002829 nitrogen Chemical group 0.000 claims 2
- 239000002002 slurry Substances 0.000 claims 2
- 229910052727 yttrium Inorganic materials 0.000 claims 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 2
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 claims 2
- 241000046053 Betta Species 0.000 claims 1
- 208000027534 Emotional disease Diseases 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- 241000238631 Hexapoda Species 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- CZFPZKYVAOUIQJ-UHFFFAOYSA-N IC(C)C(CCCCCCCCC)I Chemical compound IC(C)C(CCCCCCCCC)I CZFPZKYVAOUIQJ-UHFFFAOYSA-N 0.000 claims 1
- 206010061218 Inflammation Diseases 0.000 claims 1
- 241000906091 Lethrinus miniatus Species 0.000 claims 1
- 229910000656 Lu alloy Inorganic materials 0.000 claims 1
- 101100063942 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) dot-1 gene Proteins 0.000 claims 1
- 241000282376 Panthera tigris Species 0.000 claims 1
- 101150064053 Rffl gene Proteins 0.000 claims 1
- AUYYCJSJGJYCDS-LBPRGKRZSA-N Thyrolar Chemical class IC1=CC(C[C@H](N)C(O)=O)=CC(I)=C1OC1=CC=C(O)C(I)=C1 AUYYCJSJGJYCDS-LBPRGKRZSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- RQMIWLMVTCKXAQ-UHFFFAOYSA-N [AlH3].[C] Chemical compound [AlH3].[C] RQMIWLMVTCKXAQ-UHFFFAOYSA-N 0.000 claims 1
- 210000001015 abdomen Anatomy 0.000 claims 1
- 239000003513 alkali Substances 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- 229910052788 barium Inorganic materials 0.000 claims 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims 1
- 239000011324 bead Substances 0.000 claims 1
- 239000008280 blood Substances 0.000 claims 1
- 210000004369 blood Anatomy 0.000 claims 1
- 238000005520 cutting process Methods 0.000 claims 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims 1
- 230000035622 drinking Effects 0.000 claims 1
- 239000000839 emulsion Substances 0.000 claims 1
- 238000011156 evaluation Methods 0.000 claims 1
- 239000003337 fertilizer Substances 0.000 claims 1
- 239000003205 fragrance Substances 0.000 claims 1
- 210000004907 gland Anatomy 0.000 claims 1
- 235000012907 honey Nutrition 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 150000002466 imines Chemical class 0.000 claims 1
- 238000005342 ion exchange Methods 0.000 claims 1
- 229910000457 iridium oxide Inorganic materials 0.000 claims 1
- 210000003734 kidney Anatomy 0.000 claims 1
- 239000011133 lead Substances 0.000 claims 1
- 239000003562 lightweight material Substances 0.000 claims 1
- 238000003754 machining Methods 0.000 claims 1
- 230000013011 mating Effects 0.000 claims 1
- VMWYVTOHEQQZHQ-UHFFFAOYSA-N methylidynenickel Chemical compound [Ni]#[C] VMWYVTOHEQQZHQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052756 noble gas Inorganic materials 0.000 claims 1
- 150000002835 noble gases Chemical class 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 210000001747 pupil Anatomy 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- 238000005070 sampling Methods 0.000 claims 1
- 239000004576 sand Substances 0.000 claims 1
- 229920006395 saturated elastomer Polymers 0.000 claims 1
- 238000007493 shaping process Methods 0.000 claims 1
- 239000002893 slag Substances 0.000 claims 1
- 241000894007 species Species 0.000 claims 1
- 239000004575 stone Substances 0.000 claims 1
- 239000000725 suspension Substances 0.000 claims 1
- 239000011030 tanzanite Substances 0.000 claims 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 claims 1
- 229920001187 thermosetting polymer Polymers 0.000 claims 1
- 230000008719 thickening Effects 0.000 claims 1
- 239000005495 thyroid hormone Substances 0.000 claims 1
- 229940036555 thyroid hormone Drugs 0.000 claims 1
- 238000007514 turning Methods 0.000 claims 1
- 230000036961 partial effect Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 14
- 230000002829 reductive effect Effects 0.000 description 14
- 239000007788 liquid Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 230000018109 developmental process Effects 0.000 description 6
- 229910000898 sterling silver Inorganic materials 0.000 description 6
- 239000010934 sterling silver Substances 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 150000002736 metal compounds Chemical class 0.000 description 5
- 230000005484 gravity Effects 0.000 description 4
- 241000251468 Actinopterygii Species 0.000 description 2
- 229910000851 Alloy steel Inorganic materials 0.000 description 2
- 206010036790 Productive cough Diseases 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000005489 elastic deformation Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000010977 jade Substances 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 210000003802 sputum Anatomy 0.000 description 2
- 208000024794 sputum Diseases 0.000 description 2
- OGNSDRMLWYNUED-UHFFFAOYSA-N 1-cyclohexyl-4-[4-[4-(4-cyclohexylcyclohexyl)cyclohexyl]cyclohexyl]cyclohexane Chemical group C1CCCCC1C1CCC(C2CCC(CC2)C2CCC(CC2)C2CCC(CC2)C2CCCCC2)CC1 OGNSDRMLWYNUED-UHFFFAOYSA-N 0.000 description 1
- YTPFRRRNIYVFFE-UHFFFAOYSA-N 2,2,3,3,5,5-hexamethyl-1,4-dioxane Chemical compound CC1(C)COC(C)(C)C(C)(C)O1 YTPFRRRNIYVFFE-UHFFFAOYSA-N 0.000 description 1
- 241000238876 Acari Species 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229920001342 Bakelite® Polymers 0.000 description 1
- 208000005156 Dehydration Diseases 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 241000502522 Luscinia megarhynchos Species 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 1
- 244000018633 Prunus armeniaca Species 0.000 description 1
- 235000009827 Prunus armeniaca Nutrition 0.000 description 1
- 241000555745 Sciuridae Species 0.000 description 1
- 241000239226 Scorpiones Species 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- AJXBBNUQVRZRCZ-UHFFFAOYSA-N azanylidyneyttrium Chemical compound [Y]#N AJXBBNUQVRZRCZ-UHFFFAOYSA-N 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- QRJOYPHTNNOAOJ-UHFFFAOYSA-N copper gold Chemical compound [Cu].[Au] QRJOYPHTNNOAOJ-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- ZGHDMISTQPRNRG-UHFFFAOYSA-N dimolybdenum Chemical compound [Mo]#[Mo] ZGHDMISTQPRNRG-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical group [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000007803 itching Effects 0.000 description 1
- 230000003780 keratinization Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 235000019645 odor Nutrition 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910021647 smectite Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 210000004243 sweat Anatomy 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 210000000707 wrist Anatomy 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
- G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13625—Patterning using multi-mask exposure
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006166674A JP2007310334A (ja) | 2006-05-19 | 2006-05-19 | ハーフトーン露光法を用いた液晶表示装置の製造法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200744216A TW200744216A (en) | 2007-12-01 |
| TWI333280B true TWI333280B (enExample) | 2010-11-11 |
Family
ID=38219337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096106310A TW200744216A (en) | 2006-05-19 | 2007-02-16 | Method of manufacturing LCD apparatus by using halftone exposure method |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7602456B2 (enExample) |
| JP (1) | JP2007310334A (enExample) |
| KR (1) | KR100934590B1 (enExample) |
| CN (1) | CN101075584B (enExample) |
| GB (1) | GB2438490A (enExample) |
| TW (1) | TW200744216A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI617385B (zh) * | 2011-07-15 | 2018-03-11 | M Solv有限公司 | 用於劃分薄膜裝置為分離的晶胞之方法和設備 |
Families Citing this family (81)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8382821B2 (en) | 1998-12-03 | 2013-02-26 | Medinol Ltd. | Helical hybrid stent |
| US20040267349A1 (en) | 2003-06-27 | 2004-12-30 | Kobi Richter | Amorphous metal alloy medical devices |
| US9039755B2 (en) | 2003-06-27 | 2015-05-26 | Medinol Ltd. | Helical hybrid stent |
| US9155639B2 (en) | 2009-04-22 | 2015-10-13 | Medinol Ltd. | Helical hybrid stent |
| TWI323622B (en) * | 2004-09-30 | 2010-04-11 | Watlow Electric Mfg | Modular layered heater system |
| TWI255363B (en) * | 2005-02-04 | 2006-05-21 | Quanta Display Inc | Liquid crystal display |
| JP4066440B2 (ja) * | 2006-05-17 | 2008-03-26 | トーヨーエイテック株式会社 | ダイヤモンド様薄膜を備えた医療器具及びその製造方法 |
| JP5477523B2 (ja) * | 2006-06-15 | 2014-04-23 | 三国電子有限会社 | 低コスト大画面広視野角高速応答液晶表示装置 |
| JP4524692B2 (ja) * | 2007-07-25 | 2010-08-18 | セイコーエプソン株式会社 | 基板の製造方法及び液晶表示装置の製造方法 |
| US9439293B2 (en) * | 2007-11-21 | 2016-09-06 | Xerox Corporation | Galvanic process for making printed conductive metal markings for chipless RFID applications |
| KR20090083197A (ko) | 2008-01-29 | 2009-08-03 | 삼성전자주식회사 | 컬러필터기판의 제조 방법 |
| KR101458208B1 (ko) * | 2008-03-06 | 2014-11-04 | 엘지전자 주식회사 | 마스크리스 패턴 형성장치 및 패턴을 형성하는 방법 |
| JP4807371B2 (ja) * | 2008-03-27 | 2011-11-02 | ソニー株式会社 | 液晶表示装置 |
| CN101546733B (zh) * | 2008-03-28 | 2011-07-27 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板和彩膜基板的制造方法 |
| TWI373097B (en) * | 2008-07-09 | 2012-09-21 | Au Optronics Corp | Method for fabricating thin film transistor array substrate |
| JP2010073819A (ja) * | 2008-09-17 | 2010-04-02 | Canon Inc | 光電変換装置及び撮像システム |
| TWI373680B (en) * | 2008-10-06 | 2012-10-01 | Au Optronics Corp | Fabricating method of pixel structure |
| WO2010046407A2 (en) * | 2008-10-22 | 2010-04-29 | Micronic Laser Systems Ab | Multi-focus method of enhanced three-dimensional exposure of resist |
| TWI459436B (zh) * | 2008-10-27 | 2014-11-01 | Tpk Touch Solutions Inc | The Method of Making Double - sided Graphic Structure of Touch Circuit |
| EP2202802B1 (en) | 2008-12-24 | 2012-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit and semiconductor device |
| JP5294883B2 (ja) * | 2009-01-05 | 2013-09-18 | 株式会社ジャパンディスプレイウェスト | 液晶表示装置および電子機器 |
| US20100224880A1 (en) * | 2009-03-05 | 2010-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR20100119321A (ko) * | 2009-04-30 | 2010-11-09 | 엘지디스플레이 주식회사 | 표시장치 |
| KR101287478B1 (ko) * | 2009-06-02 | 2013-07-19 | 엘지디스플레이 주식회사 | 산화물 박막트랜지스터를 구비한 표시소자 및 그 제조방법 |
| TWI451584B (zh) * | 2009-11-16 | 2014-09-01 | Univ Nat Chiao Tung | 一種非晶系氧化物半導體的光感測器裝置與其製作方法 |
| JP5771365B2 (ja) * | 2009-11-23 | 2015-08-26 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 中小型液晶表示装置 |
| KR101210146B1 (ko) | 2010-04-05 | 2012-12-07 | 삼성디스플레이 주식회사 | 표시 장치 및 그의 제조 방법 |
| KR101350751B1 (ko) | 2010-07-01 | 2014-01-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치의 구동 방법 |
| KR20120038194A (ko) * | 2010-10-13 | 2012-04-23 | 삼성전기주식회사 | 전도성 필름 및 그 제조방법 |
| JP2012118199A (ja) | 2010-11-30 | 2012-06-21 | Panasonic Liquid Crystal Display Co Ltd | 液晶パネル、液晶表示装置、及びその製造方法 |
| KR101764902B1 (ko) | 2010-12-06 | 2017-08-14 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조방법 |
| JP2012181445A (ja) * | 2011-03-02 | 2012-09-20 | Seiko Epson Corp | 電気装置 |
| CN102637632B (zh) * | 2011-06-10 | 2014-12-10 | 京东方科技集团股份有限公司 | 一种薄膜晶体管阵列的制作方法和薄膜晶体管阵列 |
| KR101938761B1 (ko) * | 2012-05-23 | 2019-01-16 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판, 이를 포함하는 유기 발광 표시 장치 및 그 제조 방법 |
| US9065077B2 (en) | 2012-06-15 | 2015-06-23 | Apple, Inc. | Back channel etch metal-oxide thin film transistor and process |
| US8801948B2 (en) * | 2012-07-02 | 2014-08-12 | Apple Inc. | TFT mask reduction |
| US8987027B2 (en) | 2012-08-31 | 2015-03-24 | Apple Inc. | Two doping regions in lightly doped drain for thin film transistors and associated doping processes |
| US9685557B2 (en) | 2012-08-31 | 2017-06-20 | Apple Inc. | Different lightly doped drain length control for self-align light drain doping process |
| US8999771B2 (en) | 2012-09-28 | 2015-04-07 | Apple Inc. | Protection layer for halftone process of third metal |
| US9201276B2 (en) | 2012-10-17 | 2015-12-01 | Apple Inc. | Process architecture for color filter array in active matrix liquid crystal display |
| US20140120657A1 (en) * | 2012-10-30 | 2014-05-01 | Apple Inc. | Back Channel Etching Oxide Thin Film Transistor Process Architecture |
| JP5896889B2 (ja) * | 2012-12-07 | 2016-03-30 | 株式会社豊田自動織機 | 光学選択膜 |
| KR102011274B1 (ko) | 2012-12-10 | 2019-08-19 | 삼성디스플레이 주식회사 | 표시 기판의 제조 방법 |
| KR102370069B1 (ko) | 2012-12-25 | 2022-03-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR102241249B1 (ko) | 2012-12-25 | 2021-04-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 저항 소자, 표시 장치, 및 전자기기 |
| US9001297B2 (en) | 2013-01-29 | 2015-04-07 | Apple Inc. | Third metal layer for thin film transistor with reduced defects in liquid crystal display |
| US9088003B2 (en) | 2013-03-06 | 2015-07-21 | Apple Inc. | Reducing sheet resistance for common electrode in top emission organic light emitting diode display |
| CN103258827B (zh) * | 2013-04-28 | 2016-03-23 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
| KR102164941B1 (ko) * | 2014-01-13 | 2020-10-14 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판, 이를 포함하는 표시 장치, 및 박막 트랜지스터 기판의 제조 방법 |
| KR102183991B1 (ko) * | 2014-09-15 | 2020-11-30 | 삼성디스플레이 주식회사 | 액정표시패널 및 이의 제조 방법 |
| KR102380160B1 (ko) | 2015-04-02 | 2022-03-29 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
| US10274787B2 (en) * | 2015-04-17 | 2019-04-30 | Sakai Display Products Corporation | Liquid crystal display apparatus comprising a pixel electrode having a second opening part deflected from a central portion between two liquid crystal domains |
| CN113219749B (zh) * | 2016-02-17 | 2023-01-10 | 群创光电股份有限公司 | 主动元件阵列基板以及显示面板 |
| CN105609563B (zh) * | 2016-03-10 | 2018-11-23 | 深圳市华星光电技术有限公司 | 薄膜晶体管及其制造方法 |
| CN106773403A (zh) * | 2016-12-29 | 2017-05-31 | 深圳市华星光电技术有限公司 | 像素单元结构及显示装置 |
| JP6380597B1 (ja) * | 2017-04-12 | 2018-08-29 | Jnc株式会社 | 液晶表示素子 |
| CN107146791B (zh) * | 2017-05-11 | 2020-06-26 | 京东方科技集团股份有限公司 | 一种阵列基板的制作方法、阵列基板和显示装置 |
| JP6844845B2 (ja) | 2017-05-31 | 2021-03-17 | 三国電子有限会社 | 表示装置 |
| CN108163803B (zh) * | 2017-12-26 | 2023-05-26 | 中国计量大学 | 一种mems三维隧道结构 |
| CN108198824B (zh) * | 2018-01-17 | 2020-06-16 | 京东方科技集团股份有限公司 | 一种阵列基板的制备方法 |
| CN108490709B (zh) * | 2018-03-29 | 2021-06-01 | 武汉华星光电技术有限公司 | 阵列基板及其制作方法 |
| CN108538859A (zh) * | 2018-04-24 | 2018-09-14 | 深圳市华星光电技术有限公司 | 阵列基板的制作方法 |
| WO2019211083A1 (en) * | 2018-05-04 | 2019-11-07 | Asml Netherlands B.V. | Pellicle for euv lithography |
| JP7190729B2 (ja) | 2018-08-31 | 2022-12-16 | 三国電子有限会社 | キャリア注入量制御電極を有する有機エレクトロルミネセンス素子 |
| JP7246681B2 (ja) | 2018-09-26 | 2023-03-28 | 三国電子有限会社 | トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置 |
| US11062900B2 (en) * | 2018-12-04 | 2021-07-13 | Applied Materials, Inc. | Method of reducing effective oxide thickness in a semiconductor structure |
| CN109768015B (zh) * | 2019-01-29 | 2021-07-23 | 南京中电熊猫平板显示科技有限公司 | 一种阵列基板及其制造方法 |
| JP7190740B2 (ja) | 2019-02-22 | 2022-12-16 | 三国電子有限会社 | エレクトロルミネセンス素子を有する表示装置 |
| CN109659372B (zh) * | 2019-03-13 | 2019-07-09 | 南京中电熊猫液晶显示科技有限公司 | 一种薄膜晶体管及其制造方法 |
| CN109801929B (zh) * | 2019-04-17 | 2019-07-16 | 南京中电熊猫平板显示科技有限公司 | 一种阵列基板及其制造方法 |
| KR102806933B1 (ko) * | 2019-05-20 | 2025-05-14 | 미쓰이금속광업주식회사 | 캐리어를 구비하는 금속박 그리고 그 사용 방법 및 제조 방법 |
| CN110032011B (zh) * | 2019-05-30 | 2022-08-19 | 京东方科技集团股份有限公司 | 一种狭缝电极的曝光方法 |
| CN210403730U (zh) * | 2019-10-22 | 2020-04-24 | 北京京东方技术开发有限公司 | 显示面板及阵列基板 |
| JP7444436B2 (ja) | 2020-02-05 | 2024-03-06 | 三国電子有限会社 | 液晶表示装置 |
| US12478488B2 (en) | 2020-02-19 | 2025-11-25 | Medinol Ltd. | Helical stent with enhanced crimping |
| CN111362590A (zh) * | 2020-03-25 | 2020-07-03 | 四川猛犸半导体科技有限公司 | 一种薄膜器件 |
| CN116057713A (zh) * | 2020-08-06 | 2023-05-02 | 索尼半导体解决方案公司 | 半导体装置和电子设备 |
| KR102552063B1 (ko) * | 2020-12-23 | 2023-07-07 | 동우 화인켐 주식회사 | 전극 구조체, 이를 포함하는 터치 센서, 윈도우 적층체 및 화상 표시 장치 |
| CN113690248B (zh) * | 2021-07-28 | 2024-04-16 | 合肥鑫晟光电科技有限公司 | 阵列基板的制备方法、阵列基板和显示装置 |
| CN114512500B (zh) * | 2022-01-28 | 2025-08-29 | 昆山龙腾光电股份有限公司 | 阵列基板及其制作方法 |
| KR20240119757A (ko) * | 2023-01-30 | 2024-08-06 | 엘지디스플레이 주식회사 | 발광 표시장치 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61181130A (ja) | 1985-02-06 | 1986-08-13 | Fujitsu Ltd | パタ−ン形成方法 |
| JP2594114B2 (ja) * | 1988-05-31 | 1997-03-26 | 三洋電機株式会社 | 液晶表示パネル用電極基板の製造方法 |
| JP2711020B2 (ja) * | 1990-04-27 | 1998-02-10 | 三菱電機株式会社 | 液晶表示装置 |
| JPH07230097A (ja) | 1994-02-18 | 1995-08-29 | Sanyo Electric Co Ltd | 液晶表示装置 |
| JPH10142633A (ja) * | 1996-11-15 | 1998-05-29 | Mitsubishi Electric Corp | 薄膜トランジスタ集積装置およびその製造方法並びに液晶表示装置 |
| JP3410617B2 (ja) | 1996-11-29 | 2003-05-26 | シャープ株式会社 | 薄膜のパターニング方法 |
| JPH10290012A (ja) * | 1997-04-14 | 1998-10-27 | Nec Corp | アクティブマトリクス型液晶表示装置およびその製造方法 |
| JP2976948B2 (ja) | 1997-10-06 | 1999-11-10 | 日本電気株式会社 | 液晶表示装置、その製造方法およびその駆動方法 |
| JP4264675B2 (ja) | 1998-08-17 | 2009-05-20 | 栄 田中 | 液晶表示装置とその製造方法 |
| US6287899B1 (en) | 1998-12-31 | 2001-09-11 | Samsung Electronics Co., Ltd. | Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same |
| TW509810B (en) | 1999-07-19 | 2002-11-11 | Chi Mei Electronics Corp | Liquid crystal display with wide viewing angle |
| JP4190118B2 (ja) | 1999-12-17 | 2008-12-03 | 三菱電機株式会社 | 半導体装置、液晶表示装置および半導体装置の製造方法 |
| KR100325079B1 (ko) * | 1999-12-22 | 2002-03-02 | 주식회사 현대 디스플레이 테크놀로지 | 고개구율 및 고투과율 액정표시장치의 제조방법 |
| KR100322968B1 (ko) * | 1999-12-22 | 2002-02-02 | 주식회사 현대 디스플레이 테크놀로지 | 프린지 필드 구동 액정 표시 장치의 제조방법 |
| KR100500684B1 (ko) * | 1999-12-29 | 2005-07-12 | 비오이 하이디스 테크놀로지 주식회사 | 4-마스크 공정을 이용한 액정 디스플레이의 제조 방법 |
| JP2001201756A (ja) * | 2000-01-19 | 2001-07-27 | Sakae Tanaka | 液晶表示装置の製造方法と製造装置 |
| JP2001311965A (ja) | 2000-04-28 | 2001-11-09 | Nec Corp | アクティブマトリクス基板及びその製造方法 |
| JP2002107762A (ja) * | 2000-10-02 | 2002-04-10 | Sharp Corp | 液晶用マトリクス基板の製造方法 |
| JP2002141512A (ja) * | 2000-11-06 | 2002-05-17 | Advanced Display Inc | 薄膜のパターニング方法およびそれを用いたtftアレイ基板およびその製造方法 |
| JP3831868B2 (ja) * | 2001-08-13 | 2006-10-11 | 大林精工株式会社 | アクティブマトリックス表示装置とその製造方法 |
| KR100436181B1 (ko) * | 2002-04-16 | 2004-06-12 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판 제조방법 |
| JP4565799B2 (ja) | 2002-07-01 | 2010-10-20 | 大林精工株式会社 | 横電界方式液晶表示装置、その製造方法、走査露光装置およびミックス走査露光装置 |
| KR100789090B1 (ko) * | 2002-12-30 | 2007-12-26 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 제조방법 |
| JP4522660B2 (ja) | 2003-03-14 | 2010-08-11 | シャープ株式会社 | 薄膜トランジスタ基板の製造方法 |
| JP2004319655A (ja) * | 2003-04-15 | 2004-11-11 | Quanta Display Japan Inc | 液晶表示装置とその製造方法 |
| JP2005215276A (ja) * | 2004-01-29 | 2005-08-11 | Quanta Display Japan Inc | 液晶表示装置とその製造方法 |
| US6869833B1 (en) * | 2004-03-16 | 2005-03-22 | Quanta Display Inc. | Method of manufacturing a thin film transistor of a liquid crystal display |
| KR100584716B1 (ko) * | 2004-04-06 | 2006-05-29 | 엘지.필립스 엘시디 주식회사 | 구동회로 일체형 액정표시장치용 어레이 기판의 제조 방법 |
| KR101086478B1 (ko) * | 2004-05-27 | 2011-11-25 | 엘지디스플레이 주식회사 | 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법 |
| KR20060021530A (ko) * | 2004-09-03 | 2006-03-08 | 비오이 하이디스 테크놀로지 주식회사 | 박막트랜지스터 액정표시장치의 어레이 기판 제조방법 |
| CN100357817C (zh) * | 2004-11-29 | 2007-12-26 | 广辉电子股份有限公司 | 液晶显示装置及其制造方法 |
-
2006
- 2006-05-19 JP JP2006166674A patent/JP2007310334A/ja active Pending
-
2007
- 2007-02-16 TW TW096106310A patent/TW200744216A/zh unknown
- 2007-04-11 CN CN2007100937512A patent/CN101075584B/zh not_active Expired - Fee Related
- 2007-04-30 KR KR1020070042053A patent/KR100934590B1/ko not_active Expired - Fee Related
- 2007-05-14 GB GB0709203A patent/GB2438490A/en not_active Withdrawn
- 2007-05-16 US US11/749,190 patent/US7602456B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI617385B (zh) * | 2011-07-15 | 2018-03-11 | M Solv有限公司 | 用於劃分薄膜裝置為分離的晶胞之方法和設備 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2438490A (en) | 2007-11-28 |
| KR100934590B1 (ko) | 2009-12-31 |
| GB0709203D0 (en) | 2007-06-20 |
| KR20070111975A (ko) | 2007-11-22 |
| CN101075584A (zh) | 2007-11-21 |
| TW200744216A (en) | 2007-12-01 |
| CN101075584B (zh) | 2012-12-26 |
| US7602456B2 (en) | 2009-10-13 |
| JP2007310334A (ja) | 2007-11-29 |
| US20070269936A1 (en) | 2007-11-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI333280B (enExample) | ||
| US7894009B2 (en) | Liquid crystal display device and a manufacturing method of the same | |
| TWI258219B (en) | Liquid crystal display | |
| TWI270967B (en) | A wire structure, a thin film transistor substrate of using the wire structure and a method of manufacturing the same | |
| TW201107852A (en) | Electrophoretic display device and method of fabricating the same | |
| TW201203394A (en) | Array substrate and method of fabricating the same | |
| WO2001025843A1 (en) | Liquid crystal element, liquid crystal display device and production methods therefor | |
| TW552717B (en) | A wire for a display device, a method for manufacturing the same, a thin film transistor array panel including the wire, and a method for manufacturing the same | |
| TW200523835A (en) | Liquid crystal display device | |
| TW200949402A (en) | Liquid crystal display device and fabrication method thereof | |
| TW201213963A (en) | Liquid crystal display device and method of manufacturing the same | |
| TW498178B (en) | Manufacturing method and structure for in-plane switching mode liquid crystal display unit | |
| TWI241544B (en) | Substrate and method of producing the same | |
| CN100430809C (zh) | 液晶显示装置及其制造方法 | |
| US7505096B2 (en) | Liquid crystal display and method of manufacturing the same | |
| TW201202825A (en) | Electrophoretic display device and method for manufacturing the same | |
| TWI300868B (enExample) | ||
| TWI311338B (en) | Method of exposing layer with light and method of manufacturing thin film transistor substrate for liquid crystal display device using the same | |
| TW201022841A (en) | Photopolymer resin composition | |
| US8513677B2 (en) | Display device having an aluminum complex oxide on metal layer for improving corrosion resistance | |
| TWI277941B (en) | Liquid crystal display apparatus and manufacturing method therefor | |
| TWI260774B (en) | Method for manufacturing liquid crystal display substrates | |
| TW200428086A (en) | LCD device and manufacturing method thereof | |
| JPS6030956B2 (ja) | カラ−画像表示装置の製造方法 | |
| KR20110079434A (ko) | 액정표시장치 및 그 제조방법 |