JP2007310334A - ハーフトーン露光法を用いた液晶表示装置の製造法 - Google Patents

ハーフトーン露光法を用いた液晶表示装置の製造法 Download PDF

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Publication number
JP2007310334A
JP2007310334A JP2006166674A JP2006166674A JP2007310334A JP 2007310334 A JP2007310334 A JP 2007310334A JP 2006166674 A JP2006166674 A JP 2006166674A JP 2006166674 A JP2006166674 A JP 2006166674A JP 2007310334 A JP2007310334 A JP 2007310334A
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Prior art keywords
electrode
pixel electrode
layer
pixel
region
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Pending
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JP2006166674A
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English (en)
Japanese (ja)
Inventor
Sakae Tanaka
栄 田中
Toshiyuki Samejima
俊之 鮫島
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MIKUNI DENSHI KK
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MIKUNI DENSHI KK
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Priority to JP2006166674A priority Critical patent/JP2007310334A/ja
Priority to TW096106310A priority patent/TW200744216A/zh
Priority to CN2007100937512A priority patent/CN101075584B/zh
Priority to KR1020070042053A priority patent/KR100934590B1/ko
Priority to GB0709203A priority patent/GB2438490A/en
Priority to US11/749,190 priority patent/US7602456B2/en
Publication of JP2007310334A publication Critical patent/JP2007310334A/ja
Pending legal-status Critical Current

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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1345Conductors connecting electrodes to cell terminals
    • G02F1/13458Terminal pads
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • H10D86/021Manufacture or treatment of multiple TFTs
    • H10D86/0231Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441Interconnections, e.g. scanning lines
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136231Active matrix addressed cells for reducing the number of lithographic steps
    • G02F1/136236Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/13625Patterning using multi-mask exposure

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP2006166674A 2006-05-19 2006-05-19 ハーフトーン露光法を用いた液晶表示装置の製造法 Pending JP2007310334A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2006166674A JP2007310334A (ja) 2006-05-19 2006-05-19 ハーフトーン露光法を用いた液晶表示装置の製造法
TW096106310A TW200744216A (en) 2006-05-19 2007-02-16 Method of manufacturing LCD apparatus by using halftone exposure method
CN2007100937512A CN101075584B (zh) 2006-05-19 2007-04-11 使用半色调曝光法的液晶显示装置的制造法
KR1020070042053A KR100934590B1 (ko) 2006-05-19 2007-04-30 하프톤 노광법을 사용한 액정표시장치의 제조법
GB0709203A GB2438490A (en) 2006-05-19 2007-05-14 Method of manufacturing LCD apparatus by using a halftone exposure method
US11/749,190 US7602456B2 (en) 2006-05-19 2007-05-16 Method of manufacturing LCD apparatus by using halftone exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006166674A JP2007310334A (ja) 2006-05-19 2006-05-19 ハーフトーン露光法を用いた液晶表示装置の製造法

Publications (1)

Publication Number Publication Date
JP2007310334A true JP2007310334A (ja) 2007-11-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006166674A Pending JP2007310334A (ja) 2006-05-19 2006-05-19 ハーフトーン露光法を用いた液晶表示装置の製造法

Country Status (6)

Country Link
US (1) US7602456B2 (enExample)
JP (1) JP2007310334A (enExample)
KR (1) KR100934590B1 (enExample)
CN (1) CN101075584B (enExample)
GB (1) GB2438490A (enExample)
TW (1) TW200744216A (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010156903A (ja) * 2009-01-05 2010-07-15 Epson Imaging Devices Corp 液晶表示装置および電子機器
JP2010282173A (ja) * 2009-06-02 2010-12-16 Lg Display Co Ltd 薄膜トランジスタを備えた表示素子及びその製造方法
JP2012118199A (ja) * 2010-11-30 2012-06-21 Panasonic Liquid Crystal Display Co Ltd 液晶パネル、液晶表示装置、及びその製造方法
US9064750B2 (en) 2012-12-10 2015-06-23 Samasung Display Co., Ltd. Display substrate and method of manufacturing the same
JP2016520205A (ja) * 2013-04-28 2016-07-11 京東方科技集團股▲ふん▼有限公司Boe Technology Group Co.,Ltd. アレイ基板およびその製作方法、当該アレイ基板を備える表示装置
US10074709B1 (en) 2017-05-31 2018-09-11 Mikuni Electron Corporation Display device
JP2018180241A (ja) * 2017-04-12 2018-11-15 Jnc株式会社 液晶表示素子
US10937997B2 (en) 2019-02-22 2021-03-02 Mikuni Electron Corporation Display device including electroluminescence element
US11239449B2 (en) 2018-08-31 2022-02-01 Mikuni Electron Corporation Organic electroluminescence element including carrier injection amount control electrode
US11257961B2 (en) 2018-09-26 2022-02-22 Mikuni Electron Corporation Transistor, method of manufacturing transistor, and display device using the same
US11630360B2 (en) 2020-02-05 2023-04-18 Mikuni Electron Corporation Liquid crystal display device

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8382821B2 (en) 1998-12-03 2013-02-26 Medinol Ltd. Helical hybrid stent
US20040267349A1 (en) 2003-06-27 2004-12-30 Kobi Richter Amorphous metal alloy medical devices
US9039755B2 (en) 2003-06-27 2015-05-26 Medinol Ltd. Helical hybrid stent
US9155639B2 (en) 2009-04-22 2015-10-13 Medinol Ltd. Helical hybrid stent
TWI323622B (en) * 2004-09-30 2010-04-11 Watlow Electric Mfg Modular layered heater system
TWI255363B (en) * 2005-02-04 2006-05-21 Quanta Display Inc Liquid crystal display
JP4066440B2 (ja) * 2006-05-17 2008-03-26 トーヨーエイテック株式会社 ダイヤモンド様薄膜を備えた医療器具及びその製造方法
JP5477523B2 (ja) * 2006-06-15 2014-04-23 三国電子有限会社 低コスト大画面広視野角高速応答液晶表示装置
JP4524692B2 (ja) * 2007-07-25 2010-08-18 セイコーエプソン株式会社 基板の製造方法及び液晶表示装置の製造方法
US9439293B2 (en) * 2007-11-21 2016-09-06 Xerox Corporation Galvanic process for making printed conductive metal markings for chipless RFID applications
KR20090083197A (ko) 2008-01-29 2009-08-03 삼성전자주식회사 컬러필터기판의 제조 방법
KR101458208B1 (ko) * 2008-03-06 2014-11-04 엘지전자 주식회사 마스크리스 패턴 형성장치 및 패턴을 형성하는 방법
JP4807371B2 (ja) * 2008-03-27 2011-11-02 ソニー株式会社 液晶表示装置
CN101546733B (zh) * 2008-03-28 2011-07-27 北京京东方光电科技有限公司 Tft-lcd阵列基板和彩膜基板的制造方法
TWI373097B (en) * 2008-07-09 2012-09-21 Au Optronics Corp Method for fabricating thin film transistor array substrate
JP2010073819A (ja) * 2008-09-17 2010-04-02 Canon Inc 光電変換装置及び撮像システム
TWI373680B (en) * 2008-10-06 2012-10-01 Au Optronics Corp Fabricating method of pixel structure
WO2010046407A2 (en) * 2008-10-22 2010-04-29 Micronic Laser Systems Ab Multi-focus method of enhanced three-dimensional exposure of resist
TWI459436B (zh) * 2008-10-27 2014-11-01 Tpk Touch Solutions Inc The Method of Making Double - sided Graphic Structure of Touch Circuit
EP2202802B1 (en) 2008-12-24 2012-09-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
US20100224880A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20100119321A (ko) * 2009-04-30 2010-11-09 엘지디스플레이 주식회사 표시장치
TWI451584B (zh) * 2009-11-16 2014-09-01 Univ Nat Chiao Tung 一種非晶系氧化物半導體的光感測器裝置與其製作方法
JP5771365B2 (ja) * 2009-11-23 2015-08-26 三星ディスプレイ株式會社Samsung Display Co.,Ltd. 中小型液晶表示装置
KR101210146B1 (ko) 2010-04-05 2012-12-07 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
KR101350751B1 (ko) 2010-07-01 2014-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 구동 방법
KR20120038194A (ko) * 2010-10-13 2012-04-23 삼성전기주식회사 전도성 필름 및 그 제조방법
KR101764902B1 (ko) 2010-12-06 2017-08-14 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조방법
JP2012181445A (ja) * 2011-03-02 2012-09-20 Seiko Epson Corp 電気装置
CN102637632B (zh) * 2011-06-10 2014-12-10 京东方科技集团股份有限公司 一种薄膜晶体管阵列的制作方法和薄膜晶体管阵列
GB2492972B (en) * 2011-07-15 2013-09-11 M Solv Ltd Method and apparatus for dividing a thin film device into separate cells
KR101938761B1 (ko) * 2012-05-23 2019-01-16 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판, 이를 포함하는 유기 발광 표시 장치 및 그 제조 방법
US9065077B2 (en) 2012-06-15 2015-06-23 Apple, Inc. Back channel etch metal-oxide thin film transistor and process
US8801948B2 (en) * 2012-07-02 2014-08-12 Apple Inc. TFT mask reduction
US8987027B2 (en) 2012-08-31 2015-03-24 Apple Inc. Two doping regions in lightly doped drain for thin film transistors and associated doping processes
US9685557B2 (en) 2012-08-31 2017-06-20 Apple Inc. Different lightly doped drain length control for self-align light drain doping process
US8999771B2 (en) 2012-09-28 2015-04-07 Apple Inc. Protection layer for halftone process of third metal
US9201276B2 (en) 2012-10-17 2015-12-01 Apple Inc. Process architecture for color filter array in active matrix liquid crystal display
US20140120657A1 (en) * 2012-10-30 2014-05-01 Apple Inc. Back Channel Etching Oxide Thin Film Transistor Process Architecture
JP5896889B2 (ja) * 2012-12-07 2016-03-30 株式会社豊田自動織機 光学選択膜
KR102370069B1 (ko) 2012-12-25 2022-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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US9001297B2 (en) 2013-01-29 2015-04-07 Apple Inc. Third metal layer for thin film transistor with reduced defects in liquid crystal display
US9088003B2 (en) 2013-03-06 2015-07-21 Apple Inc. Reducing sheet resistance for common electrode in top emission organic light emitting diode display
KR102164941B1 (ko) * 2014-01-13 2020-10-14 삼성디스플레이 주식회사 박막 트랜지스터 기판, 이를 포함하는 표시 장치, 및 박막 트랜지스터 기판의 제조 방법
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KR102380160B1 (ko) 2015-04-02 2022-03-29 삼성디스플레이 주식회사 액정 표시 장치
US10274787B2 (en) * 2015-04-17 2019-04-30 Sakai Display Products Corporation Liquid crystal display apparatus comprising a pixel electrode having a second opening part deflected from a central portion between two liquid crystal domains
CN113219749B (zh) * 2016-02-17 2023-01-10 群创光电股份有限公司 主动元件阵列基板以及显示面板
CN105609563B (zh) * 2016-03-10 2018-11-23 深圳市华星光电技术有限公司 薄膜晶体管及其制造方法
CN106773403A (zh) * 2016-12-29 2017-05-31 深圳市华星光电技术有限公司 像素单元结构及显示装置
CN107146791B (zh) * 2017-05-11 2020-06-26 京东方科技集团股份有限公司 一种阵列基板的制作方法、阵列基板和显示装置
CN108163803B (zh) * 2017-12-26 2023-05-26 中国计量大学 一种mems三维隧道结构
CN108198824B (zh) * 2018-01-17 2020-06-16 京东方科技集团股份有限公司 一种阵列基板的制备方法
CN108490709B (zh) * 2018-03-29 2021-06-01 武汉华星光电技术有限公司 阵列基板及其制作方法
CN108538859A (zh) * 2018-04-24 2018-09-14 深圳市华星光电技术有限公司 阵列基板的制作方法
WO2019211083A1 (en) * 2018-05-04 2019-11-07 Asml Netherlands B.V. Pellicle for euv lithography
US11062900B2 (en) * 2018-12-04 2021-07-13 Applied Materials, Inc. Method of reducing effective oxide thickness in a semiconductor structure
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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01302323A (ja) * 1988-05-31 1989-12-06 Sanyo Electric Co Ltd 液晶表示パネル用電極基板の製造方法
JPH0427920A (ja) * 1990-04-27 1992-01-30 Mitsubishi Electric Corp 液晶表示装置
JPH10142633A (ja) * 1996-11-15 1998-05-29 Mitsubishi Electric Corp 薄膜トランジスタ集積装置およびその製造方法並びに液晶表示装置
JPH10290012A (ja) * 1997-04-14 1998-10-27 Nec Corp アクティブマトリクス型液晶表示装置およびその製造方法
JP2001228493A (ja) * 1999-12-29 2001-08-24 Hynix Semiconductor Inc 薄膜トランジスタ液晶表示装置の製造方法
JP2001235763A (ja) * 1999-12-22 2001-08-31 Hynix Semiconductor Inc フリンジフィールドスイッチングモード液晶表示装置の製造方法
JP2003057673A (ja) * 2001-08-13 2003-02-26 Obayashi Seiko Kk アクティブマトリックス表示装置とその製造方法
JP2003347314A (ja) * 2002-04-16 2003-12-05 Lg Phillips Lcd Co Ltd 液晶表示装置用アレー基板製造方法
JP2005215276A (ja) * 2004-01-29 2005-08-11 Quanta Display Japan Inc 液晶表示装置とその製造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61181130A (ja) 1985-02-06 1986-08-13 Fujitsu Ltd パタ−ン形成方法
JPH07230097A (ja) 1994-02-18 1995-08-29 Sanyo Electric Co Ltd 液晶表示装置
JP3410617B2 (ja) 1996-11-29 2003-05-26 シャープ株式会社 薄膜のパターニング方法
JP2976948B2 (ja) 1997-10-06 1999-11-10 日本電気株式会社 液晶表示装置、その製造方法およびその駆動方法
JP4264675B2 (ja) 1998-08-17 2009-05-20 栄 田中 液晶表示装置とその製造方法
US6287899B1 (en) 1998-12-31 2001-09-11 Samsung Electronics Co., Ltd. Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same
TW509810B (en) 1999-07-19 2002-11-11 Chi Mei Electronics Corp Liquid crystal display with wide viewing angle
JP4190118B2 (ja) 1999-12-17 2008-12-03 三菱電機株式会社 半導体装置、液晶表示装置および半導体装置の製造方法
KR100322968B1 (ko) * 1999-12-22 2002-02-02 주식회사 현대 디스플레이 테크놀로지 프린지 필드 구동 액정 표시 장치의 제조방법
JP2001201756A (ja) * 2000-01-19 2001-07-27 Sakae Tanaka 液晶表示装置の製造方法と製造装置
JP2001311965A (ja) 2000-04-28 2001-11-09 Nec Corp アクティブマトリクス基板及びその製造方法
JP2002107762A (ja) * 2000-10-02 2002-04-10 Sharp Corp 液晶用マトリクス基板の製造方法
JP2002141512A (ja) * 2000-11-06 2002-05-17 Advanced Display Inc 薄膜のパターニング方法およびそれを用いたtftアレイ基板およびその製造方法
JP4565799B2 (ja) 2002-07-01 2010-10-20 大林精工株式会社 横電界方式液晶表示装置、その製造方法、走査露光装置およびミックス走査露光装置
KR100789090B1 (ko) * 2002-12-30 2007-12-26 엘지.필립스 엘시디 주식회사 액정표시장치 제조방법
JP4522660B2 (ja) 2003-03-14 2010-08-11 シャープ株式会社 薄膜トランジスタ基板の製造方法
JP2004319655A (ja) * 2003-04-15 2004-11-11 Quanta Display Japan Inc 液晶表示装置とその製造方法
US6869833B1 (en) * 2004-03-16 2005-03-22 Quanta Display Inc. Method of manufacturing a thin film transistor of a liquid crystal display
KR100584716B1 (ko) * 2004-04-06 2006-05-29 엘지.필립스 엘시디 주식회사 구동회로 일체형 액정표시장치용 어레이 기판의 제조 방법
KR101086478B1 (ko) * 2004-05-27 2011-11-25 엘지디스플레이 주식회사 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법
KR20060021530A (ko) * 2004-09-03 2006-03-08 비오이 하이디스 테크놀로지 주식회사 박막트랜지스터 액정표시장치의 어레이 기판 제조방법
CN100357817C (zh) * 2004-11-29 2007-12-26 广辉电子股份有限公司 液晶显示装置及其制造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01302323A (ja) * 1988-05-31 1989-12-06 Sanyo Electric Co Ltd 液晶表示パネル用電極基板の製造方法
JPH0427920A (ja) * 1990-04-27 1992-01-30 Mitsubishi Electric Corp 液晶表示装置
JPH10142633A (ja) * 1996-11-15 1998-05-29 Mitsubishi Electric Corp 薄膜トランジスタ集積装置およびその製造方法並びに液晶表示装置
JPH10290012A (ja) * 1997-04-14 1998-10-27 Nec Corp アクティブマトリクス型液晶表示装置およびその製造方法
JP2001235763A (ja) * 1999-12-22 2001-08-31 Hynix Semiconductor Inc フリンジフィールドスイッチングモード液晶表示装置の製造方法
JP2001228493A (ja) * 1999-12-29 2001-08-24 Hynix Semiconductor Inc 薄膜トランジスタ液晶表示装置の製造方法
JP2003057673A (ja) * 2001-08-13 2003-02-26 Obayashi Seiko Kk アクティブマトリックス表示装置とその製造方法
JP2003347314A (ja) * 2002-04-16 2003-12-05 Lg Phillips Lcd Co Ltd 液晶表示装置用アレー基板製造方法
JP2005215276A (ja) * 2004-01-29 2005-08-11 Quanta Display Japan Inc 液晶表示装置とその製造方法

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8879015B2 (en) 2009-01-05 2014-11-04 Japan Display West Inc. Liquid crystal display device having a switch device connected to a shield electrode and an interconnection and electronic apparatus
JP2010156903A (ja) * 2009-01-05 2010-07-15 Epson Imaging Devices Corp 液晶表示装置および電子機器
JP2010282173A (ja) * 2009-06-02 2010-12-16 Lg Display Co Ltd 薄膜トランジスタを備えた表示素子及びその製造方法
JP2012118199A (ja) * 2010-11-30 2012-06-21 Panasonic Liquid Crystal Display Co Ltd 液晶パネル、液晶表示装置、及びその製造方法
US8917370B2 (en) 2010-11-30 2014-12-23 Panasonic Liquid Crystal Display Co., Ltd. Liquid crystal panel, liquid crystal display device, and manufacturing method thereof
US9201277B2 (en) 2010-11-30 2015-12-01 Panasonic Liquid Crystal Display Co., Ltd. Liquid crystal panel, liquid crystal display device, and manufacturing method thereof
US9563090B2 (en) 2010-11-30 2017-02-07 Panasonic Liquid Crystal Display Co., Ltd. Liquid crystal panel, liquid crystal display device, and manufacturing method thereof
US9612493B2 (en) 2010-11-30 2017-04-04 Panasonic Liquid Crystal Display Co., Ltd. Liquid crystal panel, liquid crystal display device, and manufacturing method thereof
US9064750B2 (en) 2012-12-10 2015-06-23 Samasung Display Co., Ltd. Display substrate and method of manufacturing the same
JP2016520205A (ja) * 2013-04-28 2016-07-11 京東方科技集團股▲ふん▼有限公司Boe Technology Group Co.,Ltd. アレイ基板およびその製作方法、当該アレイ基板を備える表示装置
JP2018180241A (ja) * 2017-04-12 2018-11-15 Jnc株式会社 液晶表示素子
US10403700B2 (en) 2017-05-31 2019-09-03 Mikuni Electron Corporation Oxide semiconductor transistor
US11626463B2 (en) 2017-05-31 2023-04-11 Mikuni Electron Corporation Display device and method for manufacturing the same
US10727288B2 (en) 2017-05-31 2020-07-28 Mikuni Electron Corporation Display device including dual gate oxide semiconductor transistor
US11205692B2 (en) 2017-05-31 2021-12-21 Mikuni Electron Corporation Display device and method for manufacturing the same
US11937458B2 (en) 2017-05-31 2024-03-19 Mikuni Electron Corporation Display device and method for manufacturing the same
US10074709B1 (en) 2017-05-31 2018-09-11 Mikuni Electron Corporation Display device
US12433090B2 (en) 2018-08-31 2025-09-30 Mikuni Electron Corporation Organic electroluminescence element including carrier injection amount control electrode
US11239449B2 (en) 2018-08-31 2022-02-01 Mikuni Electron Corporation Organic electroluminescence element including carrier injection amount control electrode
US11929439B2 (en) 2018-09-26 2024-03-12 Mikuni Electron Corporation Transistor, method of manufacturing transistor, and display device using the same
US11257961B2 (en) 2018-09-26 2022-02-22 Mikuni Electron Corporation Transistor, method of manufacturing transistor, and display device using the same
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US12432981B2 (en) 2018-09-26 2025-09-30 Mikuni Electron Corporation Transistor, method of manufacturing transistor, and display device using the same
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US12066731B2 (en) 2020-02-05 2024-08-20 Mikuni Electron Corporation Thin film transistor

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