KR100817343B1 - 반도체 집적회로장치 - Google Patents

반도체 집적회로장치 Download PDF

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KR100817343B1
KR100817343B1 KR1020077023259A KR20077023259A KR100817343B1 KR 100817343 B1 KR100817343 B1 KR 100817343B1 KR 1020077023259 A KR1020077023259 A KR 1020077023259A KR 20077023259 A KR20077023259 A KR 20077023259A KR 100817343 B1 KR100817343 B1 KR 100817343B1
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South Korea
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circuit
nonvolatile memory
flash memory
memory cell
data
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Korean (ko)
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KR20070108570A (ko
Inventor
코이치로 이시바시
마사나오 야마오카
쇼지 슈쿠리
카즈마사 야나기사와
준이치 니시모토
마사카즈 아오키
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가부시키가이샤 히타치세이사쿠쇼
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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    • C04B28/00—Compositions of mortars, concrete or artificial stone, containing inorganic binders or the reaction product of an inorganic and an organic binder, e.g. polycarboxylate cements
    • C04B28/02—Compositions of mortars, concrete or artificial stone, containing inorganic binders or the reaction product of an inorganic and an organic binder, e.g. polycarboxylate cements containing hydraulic cements other than calcium sulfates
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    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
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    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/848—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by adjacent switching
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    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
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    • G11C2216/10—Floating gate memory cells with a single polysilicon layer
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    • H01L2223/54433—Marks applied to semiconductor devices or parts containing identification or tracking information
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  • Manufacturing & Machinery (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
KR1020077023259A 2000-02-10 2001-02-08 반도체 집적회로장치 Expired - Lifetime KR100817343B1 (ko)

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JPJP-P-2000-00038167 2000-02-10
JP2000038167A JP4191355B2 (ja) 2000-02-10 2000-02-10 半導体集積回路装置

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KR100817343B1 true KR100817343B1 (ko) 2008-03-27

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US (3) US6611458B2 (enExample)
EP (1) EP1262996B1 (enExample)
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CN (2) CN101916591B (enExample)
AU (1) AU2001232248A1 (enExample)
DE (1) DE60143643D1 (enExample)
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