CN101916591B - 半导体集成电路器件 - Google Patents

半导体集成电路器件 Download PDF

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Publication number
CN101916591B
CN101916591B CN201010003815.7A CN201010003815A CN101916591B CN 101916591 B CN101916591 B CN 101916591B CN 201010003815 A CN201010003815 A CN 201010003815A CN 101916591 B CN101916591 B CN 101916591B
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mentioned
nonvolatile memory
semiconductor region
memory cell
semiconductor
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CN201010003815.7A
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Chinese (zh)
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CN101916591A (zh
Inventor
石桥孝一郎
山冈雅直
宿利章二
柳泽一正
西本顺一
青木正和
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Renesas Electronics Corp
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Hitachi Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
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    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/848—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by adjacent switching
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    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/10—Floating gate memory cells with a single polysilicon layer
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CN201010003815.7A 2000-02-10 2001-02-08 半导体集成电路器件 Expired - Lifetime CN101916591B (zh)

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JP2000038167A JP4191355B2 (ja) 2000-02-10 2000-02-10 半導体集積回路装置
JP2000-038167 2000-02-10

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CN101916591B true CN101916591B (zh) 2014-05-07

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US (3) US6611458B2 (enExample)
EP (1) EP1262996B1 (enExample)
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KR (2) KR100817343B1 (enExample)
CN (2) CN101916591B (enExample)
AU (1) AU2001232248A1 (enExample)
DE (1) DE60143643D1 (enExample)
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EP1042853A2 (en) * 1997-11-28 2000-10-11 Abb Ab Method and device for controlling the magnetic flux with an auxiliary winding in a rotating high voltage electric alternating current machine
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US20050152186A1 (en) 2005-07-14
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