JP4191355B2 - 半導体集積回路装置 - Google Patents

半導体集積回路装置 Download PDF

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Publication number
JP4191355B2
JP4191355B2 JP2000038167A JP2000038167A JP4191355B2 JP 4191355 B2 JP4191355 B2 JP 4191355B2 JP 2000038167 A JP2000038167 A JP 2000038167A JP 2000038167 A JP2000038167 A JP 2000038167A JP 4191355 B2 JP4191355 B2 JP 4191355B2
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Japan
Prior art keywords
memory cell
integrated circuit
nonvolatile memory
circuit device
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP2000038167A
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English (en)
Japanese (ja)
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JP2001229690A (ja
JP2001229690A5 (enExample
Inventor
孝一郎 石橋
章二 宿利
一正 柳澤
順一 西本
雅直 山岡
正和 青木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2000038167A priority Critical patent/JP4191355B2/ja
Priority to TW090101806A priority patent/TW506135B/zh
Priority to CN01804803A priority patent/CN100590739C/zh
Priority to KR1020077023259A priority patent/KR100817343B1/ko
Priority to PCT/JP2001/000887 priority patent/WO2001059789A1/ja
Priority to KR1020027006867A priority patent/KR100816924B1/ko
Priority to AU2001232248A priority patent/AU2001232248A1/en
Priority to EP01904349A priority patent/EP1262996B1/en
Priority to DE60143643T priority patent/DE60143643D1/de
Priority to CN201010003815.7A priority patent/CN101916591B/zh
Priority to US09/780,393 priority patent/US6611458B2/en
Publication of JP2001229690A publication Critical patent/JP2001229690A/ja
Priority to US10/602,684 priority patent/US6894944B2/en
Priority to US11/072,309 priority patent/US7149113B2/en
Publication of JP2001229690A5 publication Critical patent/JP2001229690A5/ja
Application granted granted Critical
Publication of JP4191355B2 publication Critical patent/JP4191355B2/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
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    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Structural Engineering (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2000038167A 2000-02-10 2000-02-10 半導体集積回路装置 Expired - Lifetime JP4191355B2 (ja)

Priority Applications (13)

Application Number Priority Date Filing Date Title
JP2000038167A JP4191355B2 (ja) 2000-02-10 2000-02-10 半導体集積回路装置
TW090101806A TW506135B (en) 2000-02-10 2001-01-30 Semiconductor integrated circuit device
CN201010003815.7A CN101916591B (zh) 2000-02-10 2001-02-08 半导体集成电路器件
PCT/JP2001/000887 WO2001059789A1 (en) 2000-02-10 2001-02-08 Semiconductor integrated circuit device
KR1020027006867A KR100816924B1 (ko) 2000-02-10 2001-02-08 반도체 집적회로장치
AU2001232248A AU2001232248A1 (en) 2000-02-10 2001-02-08 Semiconductor integrated circuit device
EP01904349A EP1262996B1 (en) 2000-02-10 2001-02-08 Semiconductor integrated circuit device
DE60143643T DE60143643D1 (de) 2000-02-10 2001-02-08 Integriertes halbleiterschaltungsbauelement
CN01804803A CN100590739C (zh) 2000-02-10 2001-02-08 半导体集成电路器件
KR1020077023259A KR100817343B1 (ko) 2000-02-10 2001-02-08 반도체 집적회로장치
US09/780,393 US6611458B2 (en) 2000-02-10 2001-02-12 Semiconductor integrated circuit device
US10/602,684 US6894944B2 (en) 2000-02-10 2003-06-25 Semiconductor integrated circuit device
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US6611458B2 (en) 2003-08-26
DE60143643D1 (de) 2011-01-27
US20010019499A1 (en) 2001-09-06
US20050152186A1 (en) 2005-07-14
EP1262996A1 (en) 2002-12-04
US20040004879A1 (en) 2004-01-08
TW506135B (en) 2002-10-11
KR100816924B1 (ko) 2008-03-26
KR20020080340A (ko) 2002-10-23
AU2001232248A1 (en) 2001-08-20
CN101916591B (zh) 2014-05-07
JP2001229690A (ja) 2001-08-24
CN1398407A (zh) 2003-02-19
US6894944B2 (en) 2005-05-17
CN101916591A (zh) 2010-12-15
EP1262996A4 (en) 2007-06-27
CN100590739C (zh) 2010-02-17
WO2001059789A1 (en) 2001-08-16
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EP1262996B1 (en) 2010-12-15
KR100817343B1 (ko) 2008-03-27

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