KR100812954B1 - 은 박막에 의하여 보호된 구리 배선 또는 구리 전극 및상기 전극 또는 배선을 갖는 액정 표시장치 - Google Patents

은 박막에 의하여 보호된 구리 배선 또는 구리 전극 및상기 전극 또는 배선을 갖는 액정 표시장치 Download PDF

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KR100812954B1
KR100812954B1 KR1020060021941A KR20060021941A KR100812954B1 KR 100812954 B1 KR100812954 B1 KR 100812954B1 KR 1020060021941 A KR1020060021941 A KR 1020060021941A KR 20060021941 A KR20060021941 A KR 20060021941A KR 100812954 B1 KR100812954 B1 KR 100812954B1
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electrode
copper
silver
wiring
thin film
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Korean (ko)
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KR20060097648A (ko
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한희
하용준
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주식회사 엘지화학
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020060021941A 2005-03-11 2006-03-08 은 박막에 의하여 보호된 구리 배선 또는 구리 전극 및상기 전극 또는 배선을 갖는 액정 표시장치 Expired - Fee Related KR100812954B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20050020523 2005-03-11
KR1020050020523 2005-03-11

Publications (2)

Publication Number Publication Date
KR20060097648A KR20060097648A (ko) 2006-09-14
KR100812954B1 true KR100812954B1 (ko) 2008-03-11

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KR1020060021941A Expired - Fee Related KR100812954B1 (ko) 2005-03-11 2006-03-08 은 박막에 의하여 보호된 구리 배선 또는 구리 전극 및상기 전극 또는 배선을 갖는 액정 표시장치

Country Status (6)

Country Link
US (1) US20060203181A1 (enExample)
JP (1) JP2008536295A (enExample)
KR (1) KR100812954B1 (enExample)
CN (1) CN101137933A (enExample)
TW (1) TW200702856A (enExample)
WO (1) WO2006095990A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
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US20070262379A1 (en) * 2006-05-15 2007-11-15 Chin-Chuan Lai Metal structure of glass substrate and formation thereof
WO2008089401A2 (en) * 2007-01-18 2008-07-24 Arizona Board Of Regents, Acting For And On Behalfof Arizona State University Flexible transparent electrodes via nanowires and sacrificial conductive layer
JPWO2010103941A1 (ja) 2009-03-09 2012-09-13 株式会社村田製作所 フレキシブル基板
KR101574131B1 (ko) * 2009-11-10 2015-12-04 삼성디스플레이 주식회사 박막 트랜지스터 표시판의 제조 방법
WO2012101994A1 (ja) * 2011-01-28 2012-08-02 シャープ株式会社 薄膜トランジスタ基板の製造方法及びその製造方法により製造された薄膜トランジスタ基板
CN102496547A (zh) * 2011-12-31 2012-06-13 四川虹欧显示器件有限公司 等离子显示屏中寻址电极及其制备方法
CN102522293B (zh) * 2011-12-31 2015-06-17 四川虹欧显示器件有限公司 等离子显示屏中寻址电极及其制备方法
CN102522292B (zh) * 2011-12-31 2015-07-15 四川虹欧显示器件有限公司 等离子显示屏中显示电极及其制备方法
JPWO2013111225A1 (ja) * 2012-01-26 2015-05-11 パナソニック株式会社 薄膜トランジスタアレイ装置及びそれを用いたｅｌ表示装置
CN104766803B (zh) * 2015-04-01 2018-09-11 京东方科技集团股份有限公司 Tft的制作方法及tft、阵列基板、显示装置
CN106935511B (zh) * 2017-05-09 2019-05-28 京东方科技集团股份有限公司 薄膜晶体管、显示基板及其制作方法、显示装置
CN108346584A (zh) * 2018-01-11 2018-07-31 广东禾木科技有限公司 一种置换反应制备银包铜键合丝的方法
CN109100893B (zh) * 2018-06-29 2021-11-09 武汉华星光电技术有限公司 显示面板及其制备方法、阵列基板

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JP2002289863A (ja) * 2001-03-27 2002-10-04 Toshiba Corp アレイ基板およびその製造方法ならびに液晶表示素子
KR20030001756A (ko) * 2001-06-27 2003-01-08 주식회사 하이닉스반도체 구리배선의 표면 처리방법
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100193979B1 (ko) * 1995-05-12 1999-06-15 포만 제프리 엘 캡핑된 구리 전기적 상호접속
KR20000023524A (ko) * 1998-09-30 2000-04-25 포만 제프리 엘 액정소자, 액정 디스플레이 패널 및 그 제조방법
KR20010095037A (ko) * 2000-03-30 2001-11-03 히로 산쥬 전기광학소자의 제조방법
JP2002091338A (ja) * 2000-09-12 2002-03-27 Toshiba Corp アレイ基板およびその製造方法ならびに液晶表示素子
JP2002289863A (ja) * 2001-03-27 2002-10-04 Toshiba Corp アレイ基板およびその製造方法ならびに液晶表示素子
KR20030001756A (ko) * 2001-06-27 2003-01-08 주식회사 하이닉스반도체 구리배선의 표면 처리방법
KR20030072978A (ko) * 2002-03-07 2003-09-19 엘지.필립스 엘시디 주식회사 저저항 구리배선 형성방법
KR20030095005A (ko) * 2002-06-11 2003-12-18 김재정 반도체 배선용 금속막 형성 방법

Also Published As

Publication number Publication date
CN101137933A (zh) 2008-03-05
TW200702856A (en) 2007-01-16
WO2006095990A9 (en) 2010-02-25
JP2008536295A (ja) 2008-09-04
KR20060097648A (ko) 2006-09-14
WO2006095990A1 (en) 2006-09-14
US20060203181A1 (en) 2006-09-14

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