TW200702856A - Copper wire or copper electrode protected by silver thin layer and liquid crystal display device having the wire or electrode - Google Patents

Copper wire or copper electrode protected by silver thin layer and liquid crystal display device having the wire or electrode

Info

Publication number
TW200702856A
TW200702856A TW095107931A TW95107931A TW200702856A TW 200702856 A TW200702856 A TW 200702856A TW 095107931 A TW095107931 A TW 095107931A TW 95107931 A TW95107931 A TW 95107931A TW 200702856 A TW200702856 A TW 200702856A
Authority
TW
Taiwan
Prior art keywords
copper
electrode
wire
thin layer
silver thin
Prior art date
Application number
TW095107931A
Other languages
English (en)
Chinese (zh)
Inventor
Hee Han
Yong-Joon Ha
Original Assignee
Lg Chemical Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Chemical Ltd filed Critical Lg Chemical Ltd
Publication of TW200702856A publication Critical patent/TW200702856A/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW095107931A 2005-03-11 2006-03-09 Copper wire or copper electrode protected by silver thin layer and liquid crystal display device having the wire or electrode TW200702856A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20050020523 2005-03-11

Publications (1)

Publication Number Publication Date
TW200702856A true TW200702856A (en) 2007-01-16

Family

ID=36953557

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095107931A TW200702856A (en) 2005-03-11 2006-03-09 Copper wire or copper electrode protected by silver thin layer and liquid crystal display device having the wire or electrode

Country Status (6)

Country Link
US (1) US20060203181A1 (enExample)
JP (1) JP2008536295A (enExample)
KR (1) KR100812954B1 (enExample)
CN (1) CN101137933A (enExample)
TW (1) TW200702856A (enExample)
WO (1) WO2006095990A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070262379A1 (en) * 2006-05-15 2007-11-15 Chin-Chuan Lai Metal structure of glass substrate and formation thereof
US8363201B2 (en) * 2007-01-18 2013-01-29 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University Flexible transparent electrodes via nanowires and sacrificial conductive layer
JPWO2010103941A1 (ja) 2009-03-09 2012-09-13 株式会社村田製作所 フレキシブル基板
KR101574131B1 (ko) * 2009-11-10 2015-12-04 삼성디스플레이 주식회사 박막 트랜지스터 표시판의 제조 방법
WO2012101994A1 (ja) * 2011-01-28 2012-08-02 シャープ株式会社 薄膜トランジスタ基板の製造方法及びその製造方法により製造された薄膜トランジスタ基板
CN102522292B (zh) * 2011-12-31 2015-07-15 四川虹欧显示器件有限公司 等离子显示屏中显示电极及其制备方法
CN102522293B (zh) * 2011-12-31 2015-06-17 四川虹欧显示器件有限公司 等离子显示屏中寻址电极及其制备方法
CN102496547A (zh) * 2011-12-31 2012-06-13 四川虹欧显示器件有限公司 等离子显示屏中寻址电极及其制备方法
WO2013111225A1 (ja) * 2012-01-26 2013-08-01 パナソニック株式会社 薄膜トランジスタアレイ装置及びそれを用いたｅｌ表示装置
CN104766803B (zh) 2015-04-01 2018-09-11 京东方科技集团股份有限公司 Tft的制作方法及tft、阵列基板、显示装置
CN106935511B (zh) * 2017-05-09 2019-05-28 京东方科技集团股份有限公司 薄膜晶体管、显示基板及其制作方法、显示装置
CN108346584A (zh) * 2018-01-11 2018-07-31 广东禾木科技有限公司 一种置换反应制备银包铜键合丝的方法
CN109100893B (zh) * 2018-06-29 2021-11-09 武汉华星光电技术有限公司 显示面板及其制备方法、阵列基板
US20250248072A1 (en) * 2024-01-29 2025-07-31 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5545927A (en) * 1995-05-12 1996-08-13 International Business Machines Corporation Capped copper electrical interconnects
JP3224010B2 (ja) * 1995-05-12 2001-10-29 インターナショナル・ビジネス・マシーンズ・コーポレーション キャップ付き電気相互接続構造およびその作成方法
JPH1022285A (ja) * 1996-07-02 1998-01-23 Toshiba Corp 半導体装置の製造方法
JP3545177B2 (ja) * 1997-09-18 2004-07-21 株式会社荏原製作所 多層埋め込みＣｕ配線形成方法
US6181012B1 (en) * 1998-04-27 2001-01-30 International Business Machines Corporation Copper interconnection structure incorporating a metal seed layer
JP4246298B2 (ja) * 1998-09-30 2009-04-02 インターナショナル・ビジネス・マシーンズ・コーポレーション 液晶ディスプレイパネルの製造方法
JP2001312222A (ja) * 2000-02-25 2001-11-09 Sharp Corp アクティブマトリクス基板およびその製造方法並びに該基板を用いた表示装置および撮像装置
JP2001281698A (ja) * 2000-03-30 2001-10-10 Advanced Display Inc 電気光学素子の製法
JP2002091338A (ja) * 2000-09-12 2002-03-27 Toshiba Corp アレイ基板およびその製造方法ならびに液晶表示素子
JP4737828B2 (ja) * 2000-12-21 2011-08-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2002289863A (ja) * 2001-03-27 2002-10-04 Toshiba Corp アレイ基板およびその製造方法ならびに液晶表示素子
JP2002353222A (ja) * 2001-05-29 2002-12-06 Sharp Corp 金属配線、それを備えた薄膜トランジスタおよび表示装置
KR100720403B1 (ko) * 2001-06-27 2007-05-22 매그나칩 반도체 유한회사 구리배선의 표면 처리방법
KR100870697B1 (ko) * 2002-03-07 2008-11-27 엘지디스플레이 주식회사 저저항 구리배선 형성방법
JP2003342653A (ja) * 2002-05-17 2003-12-03 Idemitsu Kosan Co Ltd 配線材料及びそれを用いた配線基板
KR20030095005A (ko) * 2002-06-11 2003-12-18 김재정 반도체 배선용 금속막 형성 방법
JP2004039916A (ja) * 2002-07-04 2004-02-05 Nec Electronics Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JP2008536295A (ja) 2008-09-04
CN101137933A (zh) 2008-03-05
US20060203181A1 (en) 2006-09-14
KR100812954B1 (ko) 2008-03-11
WO2006095990A1 (en) 2006-09-14
WO2006095990A9 (en) 2010-02-25
KR20060097648A (ko) 2006-09-14

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