JP2008536295A - 銀被覆電極を有するｌｃｄ装置 - Google Patents
銀被覆電極を有するｌｃｄ装置 Download PDFInfo
- Publication number
- JP2008536295A JP2008536295A JP2008500615A JP2008500615A JP2008536295A JP 2008536295 A JP2008536295 A JP 2008536295A JP 2008500615 A JP2008500615 A JP 2008500615A JP 2008500615 A JP2008500615 A JP 2008500615A JP 2008536295 A JP2008536295 A JP 2008536295A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- copper
- wiring
- silver
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 113
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 113
- 239000004332 silver Substances 0.000 title claims abstract description 113
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 200
- 229910052802 copper Inorganic materials 0.000 claims abstract description 200
- 239000010949 copper Substances 0.000 claims abstract description 200
- 239000010409 thin film Substances 0.000 claims abstract description 92
- 239000002344 surface layer Substances 0.000 claims abstract description 40
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000010408 film Substances 0.000 claims description 91
- 238000000034 method Methods 0.000 claims description 52
- 239000010410 layer Substances 0.000 claims description 32
- 238000006467 substitution reaction Methods 0.000 claims description 29
- 238000004519 manufacturing process Methods 0.000 claims description 24
- 229920001296 polysiloxane Polymers 0.000 claims description 20
- 238000000059 patterning Methods 0.000 claims description 17
- 230000001681 protective effect Effects 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 17
- 229910021332 silicide Inorganic materials 0.000 claims description 13
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 101710134784 Agnoprotein Proteins 0.000 claims description 5
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 230000002708 enhancing effect Effects 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 27
- 229920002120 photoresistant polymer Polymers 0.000 description 23
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000000151 deposition Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229920006268 silicone film Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20050020523 | 2005-03-11 | ||
| PCT/KR2006/000775 WO2006095990A1 (en) | 2005-03-11 | 2006-03-07 | An lcd device having a silver capped electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008536295A true JP2008536295A (ja) | 2008-09-04 |
| JP2008536295A5 JP2008536295A5 (enExample) | 2011-03-17 |
Family
ID=36953557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008500615A Pending JP2008536295A (ja) | 2005-03-11 | 2006-03-07 | 銀被覆電極を有するｌｃｄ装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20060203181A1 (enExample) |
| JP (1) | JP2008536295A (enExample) |
| KR (1) | KR100812954B1 (enExample) |
| CN (1) | CN101137933A (enExample) |
| TW (1) | TW200702856A (enExample) |
| WO (1) | WO2006095990A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012101994A1 (ja) * | 2011-01-28 | 2012-08-02 | シャープ株式会社 | 薄膜トランジスタ基板の製造方法及びその製造方法により製造された薄膜トランジスタ基板 |
| WO2013111225A1 (ja) * | 2012-01-26 | 2013-08-01 | パナソニック株式会社 | 薄膜トランジスタアレイ装置及びそれを用いたｅｌ表示装置 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070262379A1 (en) * | 2006-05-15 | 2007-11-15 | Chin-Chuan Lai | Metal structure of glass substrate and formation thereof |
| WO2008089401A2 (en) * | 2007-01-18 | 2008-07-24 | Arizona Board Of Regents, Acting For And On Behalfof Arizona State University | Flexible transparent electrodes via nanowires and sacrificial conductive layer |
| JPWO2010103941A1 (ja) | 2009-03-09 | 2012-09-13 | 株式会社村田製作所 | フレキシブル基板 |
| KR101574131B1 (ko) * | 2009-11-10 | 2015-12-04 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판의 제조 방법 |
| CN102496547A (zh) * | 2011-12-31 | 2012-06-13 | 四川虹欧显示器件有限公司 | 等离子显示屏中寻址电极及其制备方法 |
| CN102522293B (zh) * | 2011-12-31 | 2015-06-17 | 四川虹欧显示器件有限公司 | 等离子显示屏中寻址电极及其制备方法 |
| CN102522292B (zh) * | 2011-12-31 | 2015-07-15 | 四川虹欧显示器件有限公司 | 等离子显示屏中显示电极及其制备方法 |
| CN104766803B (zh) * | 2015-04-01 | 2018-09-11 | 京东方科技集团股份有限公司 | Tft的制作方法及tft、阵列基板、显示装置 |
| CN106935511B (zh) * | 2017-05-09 | 2019-05-28 | 京东方科技集团股份有限公司 | 薄膜晶体管、显示基板及其制作方法、显示装置 |
| CN108346584A (zh) * | 2018-01-11 | 2018-07-31 | 广东禾木科技有限公司 | 一种置换反应制备银包铜键合丝的方法 |
| CN109100893B (zh) * | 2018-06-29 | 2021-11-09 | 武汉华星光电技术有限公司 | 显示面板及其制备方法、阵列基板 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08316234A (ja) * | 1995-05-12 | 1996-11-29 | Internatl Business Mach Corp <Ibm> | キャップ付き銅電気相互接続構造 |
| JPH1022285A (ja) * | 1996-07-02 | 1998-01-23 | Toshiba Corp | 半導体装置の製造方法 |
| JPH1197441A (ja) * | 1997-09-18 | 1999-04-09 | Ebara Corp | 多層埋め込みＣｕ配線形成方法及び多層埋め込みＣｕ配線構造 |
| JP2002189427A (ja) * | 2000-12-21 | 2002-07-05 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2002353222A (ja) * | 2001-05-29 | 2002-12-06 | Sharp Corp | 金属配線、それを備えた薄膜トランジスタおよび表示装置 |
| JP2003342653A (ja) * | 2002-05-17 | 2003-12-03 | Idemitsu Kosan Co Ltd | 配線材料及びそれを用いた配線基板 |
| JP2004039916A (ja) * | 2002-07-04 | 2004-02-05 | Nec Electronics Corp | 半導体装置およびその製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5545927A (en) * | 1995-05-12 | 1996-08-13 | International Business Machines Corporation | Capped copper electrical interconnects |
| US6181012B1 (en) * | 1998-04-27 | 2001-01-30 | International Business Machines Corporation | Copper interconnection structure incorporating a metal seed layer |
| JP4246298B2 (ja) * | 1998-09-30 | 2009-04-02 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 液晶ディスプレイパネルの製造方法 |
| JP2001312222A (ja) * | 2000-02-25 | 2001-11-09 | Sharp Corp | アクティブマトリクス基板およびその製造方法並びに該基板を用いた表示装置および撮像装置 |
| JP2001281698A (ja) * | 2000-03-30 | 2001-10-10 | Advanced Display Inc | 電気光学素子の製法 |
| JP2002091338A (ja) * | 2000-09-12 | 2002-03-27 | Toshiba Corp | アレイ基板およびその製造方法ならびに液晶表示素子 |
| JP2002289863A (ja) * | 2001-03-27 | 2002-10-04 | Toshiba Corp | アレイ基板およびその製造方法ならびに液晶表示素子 |
| KR100720403B1 (ko) * | 2001-06-27 | 2007-05-22 | 매그나칩 반도체 유한회사 | 구리배선의 표면 처리방법 |
| KR100870697B1 (ko) * | 2002-03-07 | 2008-11-27 | 엘지디스플레이 주식회사 | 저저항 구리배선 형성방법 |
| KR20030095005A (ko) * | 2002-06-11 | 2003-12-18 | 김재정 | 반도체 배선용 금속막 형성 방법 |
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2006
- 2006-03-07 JP JP2008500615A patent/JP2008536295A/ja active Pending
- 2006-03-07 WO PCT/KR2006/000775 patent/WO2006095990A1/en not_active Ceased
- 2006-03-07 CN CNA2006800079002A patent/CN101137933A/zh active Pending
- 2006-03-08 KR KR1020060021941A patent/KR100812954B1/ko not_active Expired - Fee Related
- 2006-03-09 TW TW095107931A patent/TW200702856A/zh unknown
- 2006-03-10 US US11/372,635 patent/US20060203181A1/en not_active Abandoned
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| JPH08316234A (ja) * | 1995-05-12 | 1996-11-29 | Internatl Business Mach Corp <Ibm> | キャップ付き銅電気相互接続構造 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012101994A1 (ja) * | 2011-01-28 | 2012-08-02 | シャープ株式会社 | 薄膜トランジスタ基板の製造方法及びその製造方法により製造された薄膜トランジスタ基板 |
| WO2013111225A1 (ja) * | 2012-01-26 | 2013-08-01 | パナソニック株式会社 | 薄膜トランジスタアレイ装置及びそれを用いたｅｌ表示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100812954B1 (ko) | 2008-03-11 |
| CN101137933A (zh) | 2008-03-05 |
| TW200702856A (en) | 2007-01-16 |
| WO2006095990A9 (en) | 2010-02-25 |
| KR20060097648A (ko) | 2006-09-14 |
| WO2006095990A1 (en) | 2006-09-14 |
| US20060203181A1 (en) | 2006-09-14 |
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