KR100435119B1 - 매엽식처리장치 - Google Patents

매엽식처리장치 Download PDF

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Publication number
KR100435119B1
KR100435119B1 KR1019960030659A KR19960030659A KR100435119B1 KR 100435119 B1 KR100435119 B1 KR 100435119B1 KR 1019960030659 A KR1019960030659 A KR 1019960030659A KR 19960030659 A KR19960030659 A KR 19960030659A KR 100435119 B1 KR100435119 B1 KR 100435119B1
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KR
South Korea
Prior art keywords
gas
susceptor
heating means
processing
shower head
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019960030659A
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English (en)
Korean (ko)
Other versions
KR970008335A (ko
Inventor
쥰이치 아라미
겐지 이시카와
마사유키 기타무라
Original Assignee
동경 엘렉트론 주식회사
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Publication of KR970008335A publication Critical patent/KR970008335A/ko
Application granted granted Critical
Publication of KR100435119B1 publication Critical patent/KR100435119B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1019960030659A 1995-07-27 1996-07-26 매엽식처리장치 Expired - Fee Related KR100435119B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-210973 1995-07-27
JP7210973A JPH0945624A (ja) 1995-07-27 1995-07-27 枚葉式の熱処理装置

Publications (2)

Publication Number Publication Date
KR970008335A KR970008335A (ko) 1997-02-24
KR100435119B1 true KR100435119B1 (ko) 2004-08-06

Family

ID=16598203

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960030659A Expired - Fee Related KR100435119B1 (ko) 1995-07-27 1996-07-26 매엽식처리장치

Country Status (4)

Country Link
US (1) US5958140A (enExample)
JP (1) JPH0945624A (enExample)
KR (1) KR100435119B1 (enExample)
TW (1) TW300319B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101000093B1 (ko) * 2008-07-22 2010-12-09 엘아이지에이디피 주식회사 기판 처리용 가스 공급장치 및 이를 이용한 기판 처리장치
KR20220163902A (ko) * 2018-03-29 2022-12-12 삼성전자주식회사 가스 분배 판을 갖는 플라즈마 처리 장치

Families Citing this family (186)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10284360A (ja) 1997-04-02 1998-10-23 Hitachi Ltd 基板温度制御装置及び方法
KR100458294B1 (ko) * 1997-12-30 2005-02-23 주식회사 하이닉스반도체 반도체소자의장벽금속층형성방법
US6225601B1 (en) * 1998-07-13 2001-05-01 Applied Komatsu Technology, Inc. Heating a substrate support in a substrate handling chamber
WO2000029799A1 (en) * 1998-11-13 2000-05-25 Mattson Technology, Inc. Apparatus and method for thermal processing of semiconductor substrates
US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
JP2000277521A (ja) * 1999-03-26 2000-10-06 Kobe Steel Ltd 半導体ウェーハの高温高圧処理方法及び装置
JP2000286267A (ja) 1999-03-31 2000-10-13 Tokyo Electron Ltd 熱処理方法
JP2001023959A (ja) * 1999-07-05 2001-01-26 Mitsubishi Electric Corp プラズマ処理装置
US6466426B1 (en) * 1999-08-03 2002-10-15 Applied Materials Inc. Method and apparatus for thermal control of a semiconductor substrate
JP4487338B2 (ja) * 1999-08-31 2010-06-23 東京エレクトロン株式会社 成膜処理装置及び成膜処理方法
US6342691B1 (en) * 1999-11-12 2002-01-29 Mattson Technology, Inc. Apparatus and method for thermal processing of semiconductor substrates
US6345150B1 (en) * 1999-11-30 2002-02-05 Wafermasters, Inc. Single wafer annealing oven
US8617351B2 (en) 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US8048806B2 (en) 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
JP2002025912A (ja) * 2000-07-04 2002-01-25 Sumitomo Electric Ind Ltd 半導体製造装置用サセプタとそれを用いた半導体製造装置
US6939434B2 (en) * 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US7166524B2 (en) 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US7223676B2 (en) 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US7294563B2 (en) * 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
US7183177B2 (en) 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
US7465478B2 (en) 2000-08-11 2008-12-16 Applied Materials, Inc. Plasma immersion ion implantation process
US7320734B2 (en) 2000-08-11 2008-01-22 Applied Materials, Inc. Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage
US7094670B2 (en) * 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
US7037813B2 (en) 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US7303982B2 (en) 2000-08-11 2007-12-04 Applied Materials, Inc. Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
US7137354B2 (en) * 2000-08-11 2006-11-21 Applied Materials, Inc. Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
US7288491B2 (en) 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
DE10043601A1 (de) * 2000-09-01 2002-03-14 Aixtron Ag Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten
US6492625B1 (en) * 2000-09-27 2002-12-10 Emcore Corporation Apparatus and method for controlling temperature uniformity of substrates
WO2002061179A1 (en) * 2001-01-19 2002-08-08 Tokyo Electron Limited Method and apparatus for gas injection system with minimum particulate contamination
CN1328766C (zh) * 2001-01-22 2007-07-25 东京毅力科创株式会社 处理装置和处理方法
JP5079949B2 (ja) * 2001-04-06 2012-11-21 東京エレクトロン株式会社 処理装置および処理方法
US7161121B1 (en) * 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
KR100400044B1 (ko) * 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
KR100427996B1 (ko) * 2001-07-19 2004-04-28 주식회사 아이피에스 박막증착용 반응용기 및 그를 이용한 박막증착방법
JP3990881B2 (ja) * 2001-07-23 2007-10-17 株式会社日立製作所 半導体製造装置及びそのクリーニング方法
US6676760B2 (en) * 2001-08-16 2004-01-13 Appiled Materials, Inc. Process chamber having multiple gas distributors and method
US6962732B2 (en) * 2001-08-23 2005-11-08 Applied Materials, Inc. Process for controlling thin film uniformity and products produced thereby
CN1881090B (zh) * 2001-08-28 2011-05-25 日本电气株式会社 在气体环境中执行曝光处理的基片处理系统
JP3886424B2 (ja) * 2001-08-28 2007-02-28 鹿児島日本電気株式会社 基板処理装置及び方法
US20030070620A1 (en) * 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
WO2003041140A1 (en) * 2001-11-05 2003-05-15 Eugene Technology Co., Ltd. Apparatus of chemical vapor deposition
KR100450068B1 (ko) * 2001-11-23 2004-09-24 주성엔지니어링(주) Ｃｖｄ 장치의 멀티섹터 평판형 샤워헤드
KR100425031B1 (ko) * 2001-12-20 2004-03-30 주성엔지니어링(주) 웨이퍼 피데스탈 히터
JP4148346B2 (ja) * 2002-02-07 2008-09-10 東京エレクトロン株式会社 熱処理装置
US6861094B2 (en) * 2002-04-25 2005-03-01 Micron Technology, Inc. Methods for forming thin layers of materials on micro-device workpieces
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US6838114B2 (en) 2002-05-24 2005-01-04 Micron Technology, Inc. Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
US6821347B2 (en) * 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
TWI283899B (en) * 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
KR100515052B1 (ko) * 2002-07-18 2005-09-14 삼성전자주식회사 반도체 기판상에 소정의 물질을 증착하는 반도체 제조 장비
US6955725B2 (en) 2002-08-15 2005-10-18 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
US7084078B2 (en) 2002-08-29 2006-08-01 Micron Technology, Inc. Atomic layer deposited lanthanide doped TiOx dielectric films
JP3671966B2 (ja) * 2002-09-20 2005-07-13 日新電機株式会社 薄膜形成装置及び方法
TW587139B (en) * 2002-10-18 2004-05-11 Winbond Electronics Corp Gas distribution system and method for the plasma gas in the chamber
US7169231B2 (en) * 2002-12-13 2007-01-30 Lam Research Corporation Gas distribution system with tuning gas
US6926775B2 (en) 2003-02-11 2005-08-09 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
US20040163765A1 (en) * 2003-02-25 2004-08-26 Ans Co., Ltd. Plasma reactor for manufacturing electronic components
WO2004095531A2 (en) * 2003-03-28 2004-11-04 Tokyo Electron Ltd Method and system for temperature control of a substrate
WO2004090960A1 (ja) * 2003-04-07 2004-10-21 Tokyo Electron Limited 載置台構造及びこの載置台構造を有する熱処理装置
US7335396B2 (en) 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
DE10320597A1 (de) * 2003-04-30 2004-12-02 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von Halbleiterschichten mit zwei Prozessgasen, von denen das eine vorkonditioniert ist
CN101068950A (zh) * 2003-05-30 2007-11-07 阿维扎技术公司 气体分配系统
US20040261923A1 (en) * 2003-06-25 2004-12-30 Burns Steven M. Clean atmosphere heat treat for coated turbine components
US7344755B2 (en) 2003-08-21 2008-03-18 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers
US7422635B2 (en) 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US7013956B2 (en) * 2003-09-02 2006-03-21 Thermal Corp. Heat pipe evaporator with porous valve
US7129731B2 (en) * 2003-09-02 2006-10-31 Thermal Corp. Heat pipe with chilled liquid condenser system for burn-in testing
US20050067147A1 (en) * 2003-09-02 2005-03-31 Thayer John Gilbert Loop thermosyphon for cooling semiconductors during burn-in testing
US20050067146A1 (en) * 2003-09-02 2005-03-31 Thayer John Gilbert Two phase cooling system method for burn-in testing
JP4235076B2 (ja) * 2003-10-08 2009-03-04 東京エレクトロン株式会社 半導体製造装置および半導体製造方法
US7323231B2 (en) 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7581511B2 (en) 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
JP2005123532A (ja) * 2003-10-20 2005-05-12 Tokyo Electron Ltd 成膜装置及び成膜方法
KR100513920B1 (ko) * 2003-10-31 2005-09-08 주식회사 시스넥스 화학기상증착 반응기
WO2005055297A1 (ja) * 2003-12-03 2005-06-16 Tokyo Electron Limited 半導体処理装置
JP4180637B2 (ja) * 2004-03-26 2008-11-12 株式会社日立国際電気 半導体製造装置および半導体装置の製造方法
US7584942B2 (en) 2004-03-31 2009-09-08 Micron Technology, Inc. Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers
US7708859B2 (en) * 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US20070066038A1 (en) * 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
JP4550507B2 (ja) * 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR100587688B1 (ko) * 2004-07-28 2006-06-08 삼성전자주식회사 화학 기상 증착 장치
KR101309334B1 (ko) * 2004-08-02 2013-09-16 비코 인스트루먼츠 인코포레이티드 화학적 기상 증착 반응기용 멀티 가스 분배 인젝터
US7601649B2 (en) 2004-08-02 2009-10-13 Micron Technology, Inc. Zirconium-doped tantalum oxide films
US20060043067A1 (en) * 2004-08-26 2006-03-02 Lam Research Corporation Yttria insulator ring for use inside a plasma chamber
US7081421B2 (en) 2004-08-26 2006-07-25 Micron Technology, Inc. Lanthanide oxide dielectric layer
US7494939B2 (en) 2004-08-31 2009-02-24 Micron Technology, Inc. Methods for forming a lanthanum-metal oxide dielectric layer
US20060124169A1 (en) * 2004-12-09 2006-06-15 Tokyo Electron Limited Gas supply unit, substrate processing apparatus, and supply gas setting method
US7560395B2 (en) 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
KR100721576B1 (ko) * 2005-04-06 2007-05-23 삼성에스디아이 주식회사 유기 전계 발광 소자 제조 방법
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
KR100731164B1 (ko) * 2005-05-19 2007-06-20 주식회사 피에조닉스 샤워헤드를 구비한 화학기상 증착 방법 및 장치
US7572695B2 (en) 2005-05-27 2009-08-11 Micron Technology, Inc. Hafnium titanium oxide films
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7410910B2 (en) 2005-08-31 2008-08-12 Micron Technology, Inc. Lanthanum aluminum oxynitride dielectric films
DE102005056322A1 (de) * 2005-11-25 2007-06-06 Aixtron Ag VPE-Reaktor mit koaxial zueinander angeordneten Quellgasrohren
US20070151668A1 (en) 2006-01-04 2007-07-05 Tokyo Electron Limited Gas supply system, substrate processing apparatus, and gas supply method
US7896967B2 (en) * 2006-02-06 2011-03-01 Tokyo Electron Limited Gas supply system, substrate processing apparatus and gas supply method
US20070231489A1 (en) * 2006-03-29 2007-10-04 Tokyo Electron Limited Method for introducing a precursor gas to a vapor deposition system
US7892358B2 (en) * 2006-03-29 2011-02-22 Tokyo Electron Limited System for introducing a precursor gas to a vapor deposition system
US20070234955A1 (en) * 2006-03-29 2007-10-11 Tokyo Electron Limited Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system
US20070249173A1 (en) * 2006-04-21 2007-10-25 Applied Materials, Inc. Plasma etch process using etch uniformity control by using compositionally independent gas feed
US8187415B2 (en) * 2006-04-21 2012-05-29 Applied Materials, Inc. Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone
JP5069452B2 (ja) * 2006-04-27 2012-11-07 アプライド マテリアルズ インコーポレイテッド 二重温度帯を有する静電チャックをもつ基板支持体
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US20070254483A1 (en) * 2006-04-28 2007-11-01 Applied Materials, Inc. Plasma etch process using polymerizing etch gases and an inert diluent gas in independent gas injection zones to improve etch profile or etch rate uniformity
US7541292B2 (en) * 2006-04-28 2009-06-02 Applied Materials, Inc. Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones
US8231799B2 (en) * 2006-04-28 2012-07-31 Applied Materials, Inc. Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone
US7540971B2 (en) 2006-04-28 2009-06-02 Applied Materials, Inc. Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content
US7431859B2 (en) * 2006-04-28 2008-10-07 Applied Materials, Inc. Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation
JP5157100B2 (ja) * 2006-08-04 2013-03-06 東京エレクトロン株式会社 成膜装置及び成膜方法
US20080078746A1 (en) * 2006-08-15 2008-04-03 Noriiki Masuda Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium
KR100849929B1 (ko) * 2006-09-16 2008-08-26 주식회사 피에조닉스 반응 기체의 분사 속도를 적극적으로 조절하는 샤워헤드를구비한 화학기상 증착 방법 및 장치
US7879401B2 (en) * 2006-12-22 2011-02-01 The Regents Of The University Of Michigan Organic vapor jet deposition using an exhaust
US20080166880A1 (en) * 2007-01-08 2008-07-10 Levy David H Delivery device for deposition
US11136667B2 (en) 2007-01-08 2021-10-05 Eastman Kodak Company Deposition system and method using a delivery head separated from a substrate by gas pressure
US7789961B2 (en) * 2007-01-08 2010-09-07 Eastman Kodak Company Delivery device comprising gas diffuser for thin film deposition
JP4515474B2 (ja) * 2007-02-21 2010-07-28 株式会社日立国際電気 基板処理装置および半導体デバイスの製造方法
JP4515475B2 (ja) * 2007-02-21 2010-07-28 株式会社日立国際電気 基板処理装置および半導体デバイスの製造方法
JP5034594B2 (ja) * 2007-03-27 2012-09-26 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP4972444B2 (ja) * 2007-03-30 2012-07-11 株式会社ニューフレアテクノロジー 気相成長装置及び気相成長方法
US8440259B2 (en) * 2007-09-05 2013-05-14 Intermolecular, Inc. Vapor based combinatorial processing
US8211231B2 (en) * 2007-09-26 2012-07-03 Eastman Kodak Company Delivery device for deposition
US8398770B2 (en) * 2007-09-26 2013-03-19 Eastman Kodak Company Deposition system for thin film formation
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US7976631B2 (en) * 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
JP5192214B2 (ja) * 2007-11-02 2013-05-08 東京エレクトロン株式会社 ガス供給装置、基板処理装置および基板処理方法
WO2009107718A1 (ja) * 2008-02-27 2009-09-03 東京エレクトロン株式会社 プラズマエッチング処理装置およびプラズマエッチング処理方法
JP2011517087A (ja) * 2008-04-07 2011-05-26 チャーム エンジニアリング シーオー エルティーディー プラズマ処理装置及びプラズマ処理方法
US20100071614A1 (en) * 2008-09-22 2010-03-25 Momentive Performance Materials, Inc. Fluid distribution apparatus and method of forming the same
JP5250408B2 (ja) * 2008-12-24 2013-07-31 新光電気工業株式会社 基板温調固定装置
KR101110080B1 (ko) * 2009-07-08 2012-03-13 주식회사 유진테크 확산판을 선택적으로 삽입설치하는 기판처리방법
US20110097489A1 (en) * 2009-10-27 2011-04-28 Kerr Roger S Distribution manifold including multiple fluid communication ports
US9034142B2 (en) * 2009-12-18 2015-05-19 Novellus Systems, Inc. Temperature controlled showerhead for high temperature operations
JP5194036B2 (ja) * 2010-01-27 2013-05-08 株式会社日立国際電気 基板処理装置、半導体デバイスの製造方法およびクリーニング方法
JP5194047B2 (ja) * 2010-04-14 2013-05-08 株式会社日立国際電気 基板処理装置、半導体デバイスの製造方法およびクリーニング方法
US20110256692A1 (en) * 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
US8986451B2 (en) 2010-05-25 2015-03-24 Singulus Mocvd Gmbh I. Gr. Linear batch chemical vapor deposition system
US9169562B2 (en) 2010-05-25 2015-10-27 Singulus Mocvd Gmbh I. Gr. Parallel batch chemical vapor deposition system
US9869021B2 (en) 2010-05-25 2018-01-16 Aventa Technologies, Inc. Showerhead apparatus for a linear batch chemical vapor deposition system
SG192967A1 (en) 2011-03-04 2013-09-30 Novellus Systems Inc Hybrid ceramic showerhead
JP5902896B2 (ja) 2011-07-08 2016-04-13 東京エレクトロン株式会社 基板処理装置
US9887071B2 (en) * 2011-12-16 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-zone EPD detectors
US9162236B2 (en) 2012-04-26 2015-10-20 Applied Materials, Inc. Proportional and uniform controlled gas flow delivery for dry plasma etch apparatus
US9976215B2 (en) * 2012-05-01 2018-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor film formation apparatus and process
JP6157061B2 (ja) 2012-05-11 2017-07-05 東京エレクトロン株式会社 ガス供給装置及び基板処理装置
JP2014003234A (ja) * 2012-06-20 2014-01-09 Tokyo Electron Ltd プラズマ処理装置、及びプラズマ処理方法
KR101936348B1 (ko) * 2012-09-17 2019-01-08 삼성전자주식회사 급속 온도 변환이 가능한 테스트 핸들러 및 그를 이용한 반도체 소자의 테스트 방법
US9536710B2 (en) * 2013-02-25 2017-01-03 Applied Materials, Inc. Tunable gas delivery assembly with internal diffuser and angular injection
JP6027490B2 (ja) * 2013-05-13 2016-11-16 東京エレクトロン株式会社 ガスを供給する方法、及びプラズマ処理装置
WO2014189650A1 (en) * 2013-05-22 2014-11-27 Singulus Technologies Mocvd, Inc. Showerhead apparatus for a linear batch chemical vapor deposition system
JP6199619B2 (ja) * 2013-06-13 2017-09-20 株式会社ニューフレアテクノロジー 気相成長装置
JP6153401B2 (ja) * 2013-07-02 2017-06-28 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
JP5917477B2 (ja) 2013-11-29 2016-05-18 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
KR101560623B1 (ko) * 2014-01-03 2015-10-15 주식회사 유진테크 기판처리장치 및 기판처리방법
EP3100298B1 (en) 2014-01-27 2020-07-15 Veeco Instruments Inc. Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems
KR102268959B1 (ko) * 2014-03-31 2021-06-24 삼성디스플레이 주식회사 원자층 증착 장치 및 이를 이용한 원자층 증착 방법
US10741365B2 (en) 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
JP6444641B2 (ja) * 2014-07-24 2018-12-26 株式会社ニューフレアテクノロジー 成膜装置、サセプタ、及び成膜方法
JP6370630B2 (ja) * 2014-07-31 2018-08-08 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
US10266414B2 (en) * 2015-06-16 2019-04-23 Hemlock Semiconductor Operations Llc Susceptor arrangement for a reactor and method of heating a process gas for a reactor
JP6573559B2 (ja) * 2016-03-03 2019-09-11 東京エレクトロン株式会社 気化原料供給装置及びこれを用いた基板処理装置
US9716005B1 (en) 2016-03-18 2017-07-25 Applied Materials, Inc. Plasma poisoning to enable selective deposition
JP6068738B1 (ja) * 2016-09-16 2017-01-25 キヤノンアネルバ株式会社 加熱装置、基板加熱装置および半導体デバイスの製造方法
KR102096700B1 (ko) * 2017-03-29 2020-04-02 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
CN107761077B (zh) * 2017-10-20 2019-12-03 京东方科技集团股份有限公司 一种镀膜方法、装置以及pecvd设备
JP7038563B2 (ja) 2018-02-15 2022-03-18 東京エレクトロン株式会社 基板処理装置、流量制御方法及び流量制御プログラム
CN110872688A (zh) * 2018-08-29 2020-03-10 北京铂阳顶荣光伏科技有限公司 一种加热装置、镀膜设备、温度控制方法及系统
TWI709203B (zh) * 2018-09-11 2020-11-01 大陸商北京北方華創微電子裝備有限公司 腔室冷卻裝置及半導體加工設備
KR102641752B1 (ko) * 2018-11-21 2024-03-04 삼성전자주식회사 가스 주입 모듈, 기판 처리 장치, 및 그를 이용한 반도체 소자의 제조방법
US12467139B2 (en) * 2019-03-29 2025-11-11 Applied Materials Inc. Multizone flow distribution system
WO2020257095A1 (en) * 2019-06-18 2020-12-24 Lam Research Corporation Reduced diameter carrier ring hardware for substrate processing systems
US12486574B2 (en) 2019-08-23 2025-12-02 Lam Research Corporation Thermally controlled chandelier showerhead
CN119980191A (zh) 2019-08-28 2025-05-13 朗姆研究公司 金属沉积
US11542604B2 (en) * 2019-11-06 2023-01-03 PlayNitride Display Co., Ltd. Heating apparatus and chemical vapor deposition system
KR102652014B1 (ko) * 2020-05-12 2024-03-28 세메스 주식회사 기판 처리 장치
JP7364547B2 (ja) * 2020-09-25 2023-10-18 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置およびプログラム
WO2022260042A1 (ja) * 2021-06-07 2022-12-15 京セラ株式会社 シャワープレート
CN113699509B (zh) * 2021-10-27 2022-02-01 苏州长光华芯光电技术股份有限公司 一种半导体生长设备及其工作方法
US11940819B1 (en) * 2023-01-20 2024-03-26 Applied Materials, Inc. Mass flow controller based fast gas exchange
CN119710648A (zh) * 2024-12-23 2025-03-28 拓荆科技(上海)有限公司 一种加热盘及薄膜沉积设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0383894A (ja) * 1989-08-24 1991-04-09 Mitsubishi Electric Corp 気相成長装置
JPH04211115A (ja) * 1990-01-26 1992-08-03 Fujitsu Ltd Ｒｆプラズマｃｖｄ装置ならびに該装置による薄膜形成方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4741801A (en) * 1981-07-17 1988-05-03 Plasma Physics Corp. Glow discharge method and apparatus and photoreceptor devices made therewith
JPS59124140A (ja) * 1982-12-29 1984-07-18 Fujitsu Ltd 静電吸着装置
JPS6332930A (ja) * 1986-07-25 1988-02-12 Tokyo Electron Ltd アッシング装置
JPS63160355A (ja) * 1986-12-24 1988-07-04 Seiko Instr & Electronics Ltd 静電チヤツク
JPH0397222A (ja) * 1989-09-11 1991-04-23 Kokusai Electric Co Ltd 枚葉式ｃｖｄ装置
US5127988A (en) * 1989-12-27 1992-07-07 Yoshida Kogyo K.K. Process for the surface treatment of conductive material
JPH0521393A (ja) * 1991-07-11 1993-01-29 Sony Corp プラズマ処理装置
JP2758755B2 (ja) * 1991-12-11 1998-05-28 松下電器産業株式会社 ドライエッチング装置及び方法
US5273588A (en) * 1992-06-15 1993-12-28 Materials Research Corporation Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means
JP2798570B2 (ja) * 1992-12-01 1998-09-17 京セラ株式会社 静電チャック
JP2749759B2 (ja) * 1993-06-23 1998-05-13 信越化学工業株式会社 静電チャック付セラミックスヒーター
JPH07273101A (ja) * 1994-03-31 1995-10-20 Tokyo Electron Ltd 枚葉式熱処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0383894A (ja) * 1989-08-24 1991-04-09 Mitsubishi Electric Corp 気相成長装置
JPH04211115A (ja) * 1990-01-26 1992-08-03 Fujitsu Ltd Ｒｆプラズマｃｖｄ装置ならびに該装置による薄膜形成方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101000093B1 (ko) * 2008-07-22 2010-12-09 엘아이지에이디피 주식회사 기판 처리용 가스 공급장치 및 이를 이용한 기판 처리장치
KR20220163902A (ko) * 2018-03-29 2022-12-12 삼성전자주식회사 가스 분배 판을 갖는 플라즈마 처리 장치
KR102561491B1 (ko) 2018-03-29 2023-07-31 삼성전자주식회사 가스 분배 판을 갖는 플라즈마 처리 장치

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