JPH0945624A - 枚葉式の熱処理装置 - Google Patents

枚葉式の熱処理装置

Info

Publication number
JPH0945624A
JPH0945624A JP7210973A JP21097395A JPH0945624A JP H0945624 A JPH0945624 A JP H0945624A JP 7210973 A JP7210973 A JP 7210973A JP 21097395 A JP21097395 A JP 21097395A JP H0945624 A JPH0945624 A JP H0945624A
Authority
JP
Japan
Prior art keywords
gas
wafer
mounting table
heating
shower head
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7210973A
Other languages
English (en)
Japanese (ja)
Inventor
Jiyunichi Arami
淳一 荒見
Kenji Ishikawa
賢治 石川
Masayuki Kitamura
昌幸 北村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP7210973A priority Critical patent/JPH0945624A/ja
Priority to TW085109097A priority patent/TW300319B/zh
Priority to KR1019960030659A priority patent/KR100435119B1/ko
Priority to US08/686,604 priority patent/US5958140A/en
Publication of JPH0945624A publication Critical patent/JPH0945624A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP7210973A 1995-07-27 1995-07-27 枚葉式の熱処理装置 Pending JPH0945624A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP7210973A JPH0945624A (ja) 1995-07-27 1995-07-27 枚葉式の熱処理装置
TW085109097A TW300319B (enExample) 1995-07-27 1996-07-25
KR1019960030659A KR100435119B1 (ko) 1995-07-27 1996-07-26 매엽식처리장치
US08/686,604 US5958140A (en) 1995-07-27 1996-07-26 One-by-one type heat-processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7210973A JPH0945624A (ja) 1995-07-27 1995-07-27 枚葉式の熱処理装置

Publications (1)

Publication Number Publication Date
JPH0945624A true JPH0945624A (ja) 1997-02-14

Family

ID=16598203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7210973A Pending JPH0945624A (ja) 1995-07-27 1995-07-27 枚葉式の熱処理装置

Country Status (4)

Country Link
US (1) US5958140A (enExample)
JP (1) JPH0945624A (enExample)
KR (1) KR100435119B1 (enExample)
TW (1) TW300319B (enExample)

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001118835A (ja) * 1999-08-03 2001-04-27 Applied Materials Inc 半導体基板の温度制御のための方法及びその装置
JP2002025912A (ja) * 2000-07-04 2002-01-25 Sumitomo Electric Ind Ltd 半導体製造装置用サセプタとそれを用いた半導体製造装置
JP2002530847A (ja) * 1998-11-13 2002-09-17 マットソン テクノロジイ インコーポレイテッド 半導体基板を処理する熱処理装置、システム及び方法
KR100400044B1 (ko) * 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
KR100425031B1 (ko) * 2001-12-20 2004-03-30 주성엔지니어링(주) 웨이퍼 피데스탈 히터
KR100427996B1 (ko) * 2001-07-19 2004-04-28 주식회사 아이피에스 박막증착용 반응용기 및 그를 이용한 박막증착방법
WO2004090960A1 (ja) * 2003-04-07 2004-10-21 Tokyo Electron Limited 載置台構造及びこの載置台構造を有する熱処理装置
WO2005055297A1 (ja) * 2003-12-03 2005-06-16 Tokyo Electron Limited 半導体処理装置
WO2005093806A1 (ja) * 2004-03-26 2005-10-06 Hitachi Kokusai Electric Inc. 半導体製造装置および半導体装置の製造方法
JP2006526289A (ja) * 2003-03-28 2006-11-16 東京エレクトロン株式会社 基板の温度コントロールのための方法とシステム
JP2007142470A (ja) * 2007-02-21 2007-06-07 Hitachi Kokusai Electric Inc 基板処理装置および半導体デバイスの製造方法
JP2007142469A (ja) * 2007-02-21 2007-06-07 Hitachi Kokusai Electric Inc 基板処理装置および半導体デバイスの製造方法
JP2007300057A (ja) * 2006-04-27 2007-11-15 Applied Materials Inc 二重温度帯を有する静電チャックをもつ基板支持体
JP2008251946A (ja) * 2007-03-30 2008-10-16 Nuflare Technology Inc 気相成長装置及び気相成長方法
JP2009512193A (ja) * 2005-10-06 2009-03-19 ラム リサーチ コーポレーション 半径方向の温度制御能力を有する静電チャック
JP2010103561A (ja) * 2010-01-27 2010-05-06 Hitachi Kokusai Electric Inc 基板処理装置および半導体デバイスの製造方法
JP2010153490A (ja) * 2008-12-24 2010-07-08 Shinko Electric Ind Co Ltd 基板温調固定装置
JP2010166088A (ja) * 2010-04-14 2010-07-29 Hitachi Kokusai Electric Inc 基板処理装置および半導体デバイスの製造方法
US8221638B2 (en) 2006-01-04 2012-07-17 Tokyo Electron Limited Gas supply system, substrate processing apparatus and gas supply method
JP2012532472A (ja) * 2009-07-08 2012-12-13 ユ−ジーン テクノロジー カンパニー．リミテッド 拡散板を選択的に挿入設置する基板処理装置及び基板処理方法
WO2014185300A1 (ja) * 2013-05-13 2014-11-20 東京エレクトロン株式会社 ガスを供給する方法、及びプラズマ処理装置
US8906193B2 (en) 2004-12-09 2014-12-09 Tokyo Electron Limited Gas supply unit, substrate processing apparatus and supply gas setting method
US9460893B2 (en) 2011-07-08 2016-10-04 Tokyo Electron Limited Substrate processing apparatus
US9502237B2 (en) 2013-11-29 2016-11-22 Hitachi Kokusai Electric Inc. Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
KR20190098921A (ko) 2018-02-15 2019-08-23 도쿄엘렉트론가부시키가이샤 기판 처리 장치, 유량 제어 방법 및 유량 제어 프로그램
JP2021534578A (ja) * 2018-09-11 2021-12-09 北京北方華創微電子装備有限公司Beijing Naura Microelectronics Equipment Co., Ltd. チャンバー冷却装置及び半導体加工設備
JP2022053930A (ja) * 2020-09-25 2022-04-06 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置およびプログラム
WO2022260042A1 (ja) * 2021-06-07 2022-12-15 京セラ株式会社 シャワープレート

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JPH10284360A (ja) 1997-04-02 1998-10-23 Hitachi Ltd 基板温度制御装置及び方法
KR100458294B1 (ko) * 1997-12-30 2005-02-23 주식회사 하이닉스반도체 반도체소자의장벽금속층형성방법
US6225601B1 (en) * 1998-07-13 2001-05-01 Applied Komatsu Technology, Inc. Heating a substrate support in a substrate handling chamber
US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
JP2000277521A (ja) * 1999-03-26 2000-10-06 Kobe Steel Ltd 半導体ウェーハの高温高圧処理方法及び装置
JP2000286267A (ja) 1999-03-31 2000-10-13 Tokyo Electron Ltd 熱処理方法
JP2001023959A (ja) * 1999-07-05 2001-01-26 Mitsubishi Electric Corp プラズマ処理装置
JP4487338B2 (ja) * 1999-08-31 2010-06-23 東京エレクトロン株式会社 成膜処理装置及び成膜処理方法
US6342691B1 (en) * 1999-11-12 2002-01-29 Mattson Technology, Inc. Apparatus and method for thermal processing of semiconductor substrates
US6345150B1 (en) * 1999-11-30 2002-02-05 Wafermasters, Inc. Single wafer annealing oven
US8617351B2 (en) 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US8048806B2 (en) 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
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US7223676B2 (en) 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
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US7183177B2 (en) 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
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US7320734B2 (en) 2000-08-11 2008-01-22 Applied Materials, Inc. Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage
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US7037813B2 (en) 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
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US7137354B2 (en) * 2000-08-11 2006-11-21 Applied Materials, Inc. Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
US7288491B2 (en) 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
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US6492625B1 (en) * 2000-09-27 2002-12-10 Emcore Corporation Apparatus and method for controlling temperature uniformity of substrates
WO2002061179A1 (en) * 2001-01-19 2002-08-08 Tokyo Electron Limited Method and apparatus for gas injection system with minimum particulate contamination
CN1328766C (zh) * 2001-01-22 2007-07-25 东京毅力科创株式会社 处理装置和处理方法
JP5079949B2 (ja) * 2001-04-06 2012-11-21 東京エレクトロン株式会社 処理装置および処理方法
JP3990881B2 (ja) * 2001-07-23 2007-10-17 株式会社日立製作所 半導体製造装置及びそのクリーニング方法
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US6962732B2 (en) * 2001-08-23 2005-11-08 Applied Materials, Inc. Process for controlling thin film uniformity and products produced thereby
CN1881090B (zh) * 2001-08-28 2011-05-25 日本电气株式会社 在气体环境中执行曝光处理的基片处理系统
JP3886424B2 (ja) * 2001-08-28 2007-02-28 鹿児島日本電気株式会社 基板処理装置及び方法
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JP4148346B2 (ja) * 2002-02-07 2008-09-10 東京エレクトロン株式会社 熱処理装置
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KR970008335A (ko) 1997-02-24

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