JPWO2010150880A1 - 白色反射材及びその製造方法 - Google Patents
白色反射材及びその製造方法 Download PDFInfo
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- JPWO2010150880A1 JPWO2010150880A1 JP2011519952A JP2011519952A JPWO2010150880A1 JP WO2010150880 A1 JPWO2010150880 A1 JP WO2010150880A1 JP 2011519952 A JP2011519952 A JP 2011519952A JP 2011519952 A JP2011519952 A JP 2011519952A JP WO2010150880 A1 JPWO2010150880 A1 JP WO2010150880A1
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- Prior art keywords
- titanium oxide
- white
- silicone
- film
- reflective material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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Images
Classifications
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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Abstract
Description
銅箔の調製:
厚み12〜18μmの銅箔の表面を、脱脂してから、コロナ放電処理、大気圧プラズマ処理又は紫外線処理により表面処理を施し、銅箔の表面に露出している水酸基を生成させる。その銅箔の表面を、ビニルメトキシシロキサンホモポリマー例えばCH2=CH-Si(OCH3)2-O-[(CH2=CH-)Si(-OCH3)-O-]j-Si(OCH3)2-CH=CH2(jは3〜4)の溶液に浸漬してから、熱処理し、銅箔の表面に露出している水酸基とビニルメトキシシロキサンホモポリマーとを反応させ、シリルエーテルを形成させて、ビニルシリル基含有シリル基である活性シリル基を生成させる。反応性を向上させるために、それを白金触媒懸濁液に浸し、活性シリル基中のビニル基に白金触媒を保持させ、積層すべき銅箔を準備する。
シリコーン組成物の調製:
次いで、ヒドロシリル基含有シリル基を有する未架橋のシリコーン樹脂成分又はシリコーンゴム成分とアナターゼ型又はルチル型の酸化チタン粉末とが含まれているシリコーン組成物を準備する。詳しくは後に記述する。
前記の表面処理した銅箔の面に前記シリコーン組成物を、流下塗布し、加熱成形とともに架橋すると、ビニルシリル基含有シリル基のビニルと、ヒドロシリル基含有シリル基のヒドロシリルとが付加型反応し、銅箔が積層された酸化チタン含有シリコーン製の白色反射材(基材16)が作製される。
基材16に積層された銅薄膜15に、レジストを用いて所望する回路となるようにエッチングすることにより、所望の配線パターンを有する配線15a・15bを形成する。半導体発光素子13を配線パターンの所定の位置に設置し、リード線14a・14bを超音波溶着により、半導体発光素子13と配線15a・15bとに接続する。
一方、前記と同様の未架橋のシリコーン樹脂成分とアナターゼ型又はルチル型の酸化チタン粉末と必要に応じシランカップリング剤とを含有するシリコーン組成物を下金型に注入し、上金型を閉じて加熱架橋させることによって、酸化チタン含有シリコーン製の白色反射材であるパッケージ成形体部材10を、成形する。
なお、酸化チタンにシランカップリング剤をコーティング処理してから、シロキサン化合物に加え、加熱、又は光照射によりシランカップリング剤とシロキサン化合物とを架橋させてバインダーの分子間にフィラーを内包させたシリコーン樹脂を金型内で成形すると一層強度の強い基板20やパッケージ成形体部材10が得られる。
このパッケージ成形体部材10の広口開口部を上向きにして、半導体発光素子13及びリード線14a・14bに接しないように半導体発光素子13を取り巻くようにパッケージ成形体部材10を配置しながら銅箔回路の一部を含む基材16に接着剤で接着して一体化する。その後、パッケージ成形体部材10の開口部をシリコーン透明樹脂で封止すると、半導体発光装置1が得られる。
シリコーンレジン(商品名SR−7010:東レ・ダウコーニング株式会社)100質量部にアナターゼ型酸化チタン(商品名SA−1:堺化学工業株式会社)を10質量部添加分散し、加熱プレスにて、170℃で5分間の硬化条件によって、縦70mm、横70mm、厚さ1mmの白色反射板を作製した。その後170℃で90分間アニールし測定サンプルとした。150℃で1000時間経過後の反射率を、分光光度計UV−3150(SHIMADZU製)を用いて測定した。なお、反射率の測定は、3種類の波長(380nm、550nm及び780nm)の光について実施した。その測定結果を、下記表1にまとめて示す。
表1から明らかな通り、1000時間経過後でも大きな反射率の低下は見られず、黄変したり劣化したりすることが無いため、耐光性、耐熱性に優れており、有用な反射材料であることがわかった。
ビスマレイミド・トリアジン樹脂(BT樹脂)、ガラスエポキシ樹脂(GE樹脂)100質量部夫々にルチル型酸化チタン(商品名SR−1:堺化学工業株式会社)を100質量部添加分散し膜厚が50μmである基板を1枚ずつ作成した。
一方、前記と同様にして厚さ25μmのビスマレイミド・トリアジン樹脂基材及びガラスエポキシ樹脂基材を得た。
この25μm厚の各々の基材(BT樹脂製基材、GE樹脂製基材)上にバーコーターで、実施例1で用いたシリコーン樹脂にルチル型酸化チタン(商品名SR−1:堺化学工業株式会社)を100質量部添加したシリコーン組成物を塗布し膜厚25μmのシリコーン樹脂組成物塗膜を有する積層体し厚さ50μmの白色反射板を得た。
これら4種類の白色反射板を実施例1と同様に評価した。測定波長については、200nm〜1000nmの範囲で反射率を測定した。
加熱前の反射率の結果を図6に示し、加熱経過後の反射率の結果を図7に示す。
図6及び図7より、BT樹脂製基材やGE樹脂製基材に酸化チタン含有シリコーン製白色反射膜形成組成物を塗布することで、それぞれ反射率が向上することが明らかとなった。また、熱処理後においても、酸化チタン含有シリコーン製白色反射膜形成組成物を塗布した積層タイプの白色反射材は高い反射率を維持することがわかった。
実施例2と同様に作成した厚さ25μmのBT樹脂基材上に、シリコーンレジン100質量部に対して、ルチル型酸化チタンの配合部数を10質量部(phr)、25phr、50phr、250phrとした酸化チタン含有シリコーン組成物を膜厚が25μmになるようにそれぞれ塗布し、厚さ50μmの積層タイプの白色反射材を得た。実施例2と同様の反射率測定を行い、その照射波長と反射率との相関関係を図8に示す。また、実施例2と同様の熱処理及び反射率測定を行い、その照射波長と反射率との相関関係を図9に示す。
図8よりルチル型酸化チタンを10phr添加分散して形成された積層タイプの白色反射基材は反射率は90%以上であることが分った。図9より、加熱経時変化を考慮すると80%の反射率を確保するためには、25phr以上のルチル型酸化チタンが必要であることがわかった。このことから、10phr以上であると好ましく、加熱経時変化を考慮すると25phr以上であるとより好ましい。
実施例2と同様に作成した厚さ25μmのGE樹脂基材上に、シリコーンレジン100質量部に対して、ルチル型酸化チタンの配合部数を10質量部(phr)、25phr、50phr、250phrとした酸化チタン含有シリコーン組成物を膜厚が25μmになるようにそれぞれ塗布し、厚さ50μmの積層タイプの白色反射材を得た。実施例2と同様の反射率測定を行い、その照射波長と反射率との相関関係を図10に示す。また、実施例2と同様の熱処理及び反射率測定を行い、その照射波長と反射率との相関関係を図11に示す。
図10よりルチル型酸化チタンを25phr添加分散して形成された積層タイプの白色反射基材は反射率が80%以上であることが分った。図11より、加熱経時変化を考慮すると80%の反射率を確保するためには、50phr以上のルチル型酸化チタンが必要であることがわかった。このことから、ルチル型酸化チタンの添加量は25phr以上であると好ましく、加熱経時変化を考慮すると50phr以上であるとより好ましい。
Claims (19)
- シリコーン樹脂又はシリコーンゴムにアナターゼ型又はルチル型の酸化チタン粒子が分散されて成形されており、酸化チタン含有シリコーン組成物からなることを特徴とする白色反射材。
- 前記酸化チタン粒子は、平均粒径0.05〜50μmであり、前記シリコーン樹脂又はシリコーンゴム100質量部に対し、5〜400質量部含有し反射率が少なくとも80%以上であることを特徴とする請求項1に記載の白色反射材。
- 集光又は拡散すべき方向に反射し又は乱反射するように、立体形状、膜状、又は板状に成形されていることを特徴とする請求項1に記載の白色反射材。
- 表面に発光素子又は太陽電池素子からなる半導体光学素子に接続するための導電金属膜が付されている前記板状又は膜状であることを特徴とする請求項3に記載の白色反射材。
- 前記膜状の基材が前記導電金属膜上に付され、又は前記導電金属膜が膜状の基材上に付されていることを特徴とする請求項3に記載の白色反射材。
- 前記膜状の基材又は前記導電金属膜に、光学素子の非装着面側で、支持体が付されていることを特徴とする請求項5に記載の白色反射材。
- 前記支持体に前記導電金属膜が付され、前記導電金属膜上に前記膜状の基材が付されていることを特徴とする請求項6に記載の白色反射材。
- 前記膜状の厚さが、5μm〜2000μmであることを特徴とする請求項3に記載の白色反射材。
- 発光素子又は太陽電池素子からなる光学素子を、取り巻いており、それの入出射方向で末広がりに前記立体形状に開口しつつ、収容しているパッケージ成形体部材であることを特徴とする請求項3に記載の白色反射材。
- 前記発光素子へ接続している導電金属膜が表面に付され、その光学素子を装着している基材と、前記パッケージ成形体部材とが、接着剤で接着され、又は化学結合を介して結合されていることを特徴とする請求項9に記載の白色反射材。
- 前記基材が、シリコーン樹脂又はシリコーンゴムで形成されていることを特徴とする請求項10に記載の白色反射材。
- 前記基材に、前記光学素子の非装着面側で、支持体が付されていることを特徴とする請求項10に記載の白色反射材。
- 前記基材に、ガラスクロス、ガラスペーパー及びガラス繊維から少なくとも1つ以上選ばれる補強材が含有されていることを特徴とする請求項10に記載の白色反射材。
- 前記基材上に、前記光学素子を取り巻く前記パッケージ成形体部材が、複数並びつつ、前記発光素子を有している半導体発光装置、又は前記太陽電子素子を有している太陽電池が、一体に構成されていることを特徴とする請求項9に記載の白色反射材。
- 前記シリコーン樹脂又はシリコーンゴムが、ヒドロシリル含有シリル基、ビニル含有シリル基、アルコキシシリル含有シリル基、加水分解性基含有シリル基の何れかの活性シリル基を有することを特徴とする請求項1に記載の白色反射材。
- アナターゼ型又はルチル型の酸化チタンと未架橋のシリコーン樹脂成分又はシリコーンゴム成分とを含有し、成形体成形加工に用いるための酸化チタン含有シリコーン組成物であることを特徴とする白色反射材。
- 非シリコーン樹脂からなる支持体の表面を表面活性化処理し、表面活性化処理した面に、シリコーン樹脂又はシリコーンゴムにアナターゼ型又はルチル型の酸化チタン粒子を分散した液状又は塑性の酸化チタン含有シリコーン組成物を塗布した後、架橋硬化して積層体を形成することを特徴とする白色反射材の製造方法。
- 架橋硬化した酸化チタン含有シリコーン組成物層の上に更に金属導電層を設けることを特徴とする請求項17に記載の白色反射材の製造方法。
- 非シリコーン樹脂からなる支持体に金属導電層を設け、該金属導電層に配線回路を形成し、該配線回路に半導体発光素子を結線し、該半導体発光素子の周囲に未架橋のシリコーン樹脂又はシリコーンゴムにアナターゼ型又はルチル型の酸化チタン粒子を分散した液状又は塑性の酸化チタン含有シリコーン組成物を部分的に設けた後、該組成物を架橋硬化することを特徴とする白色反射材の製造方法。
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CN102473824B (zh) | 2015-08-05 |
KR20170028456A (ko) | 2017-03-13 |
JP2014078041A (ja) | 2014-05-01 |
KR101821101B1 (ko) | 2018-01-22 |
US8704258B2 (en) | 2014-04-22 |
EP2448026A1 (en) | 2012-05-02 |
WO2010150880A1 (ja) | 2010-12-29 |
HK1170849A1 (en) | 2013-03-08 |
KR20120123242A (ko) | 2012-11-08 |
CN102473824A (zh) | 2012-05-23 |
JP5746620B2 (ja) | 2015-07-08 |
TW201120142A (en) | 2011-06-16 |
TWI477555B (zh) | 2015-03-21 |
EP2448026A4 (en) | 2013-08-14 |
US20120138997A1 (en) | 2012-06-07 |
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