JP5670250B2 - Led基板、発光モジュール、発光モジュールを有する機器、led基板の製造方法、発光モジュールの製造方法、及び発光モジュールを有する機器の製造方法 - Google Patents
Led基板、発光モジュール、発光モジュールを有する機器、led基板の製造方法、発光モジュールの製造方法、及び発光モジュールを有する機器の製造方法 Download PDFInfo
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- JP5670250B2 JP5670250B2 JP2011092524A JP2011092524A JP5670250B2 JP 5670250 B2 JP5670250 B2 JP 5670250B2 JP 2011092524 A JP2011092524 A JP 2011092524A JP 2011092524 A JP2011092524 A JP 2011092524A JP 5670250 B2 JP5670250 B2 JP 5670250B2
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- light emitting
- solder resist
- substrate
- emitting module
- manufacturing
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- 239000000758 substrate Substances 0.000 title claims description 201
- 238000000034 method Methods 0.000 title claims description 73
- 238000004519 manufacturing process Methods 0.000 title claims description 64
- 229910000679 solder Inorganic materials 0.000 claims description 167
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 142
- 239000004020 conductor Substances 0.000 claims description 119
- 239000002245 particle Substances 0.000 claims description 102
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 93
- 229920002050 silicone resin Polymers 0.000 claims description 57
- 229920005989 resin Polymers 0.000 claims description 50
- 239000011347 resin Substances 0.000 claims description 50
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 27
- 239000011148 porous material Substances 0.000 claims description 26
- 229910052802 copper Inorganic materials 0.000 claims description 19
- 239000010949 copper Substances 0.000 claims description 19
- 239000003822 epoxy resin Substances 0.000 claims description 14
- 229920000647 polyepoxide Polymers 0.000 claims description 14
- 229910010272 inorganic material Inorganic materials 0.000 claims description 10
- 239000011147 inorganic material Substances 0.000 claims description 10
- 239000012779 reinforcing material Substances 0.000 claims description 9
- 239000003365 glass fiber Substances 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 239000011152 fibreglass Substances 0.000 claims description 2
- 238000007517 polishing process Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 41
- 239000000463 material Substances 0.000 description 27
- 238000007747 plating Methods 0.000 description 26
- 230000008569 process Effects 0.000 description 25
- 230000000052 comparative effect Effects 0.000 description 18
- 239000002994 raw material Substances 0.000 description 16
- 238000007772 electroless plating Methods 0.000 description 15
- 238000005259 measurement Methods 0.000 description 15
- 238000005476 soldering Methods 0.000 description 13
- 239000004408 titanium dioxide Substances 0.000 description 13
- 239000011230 binding agent Substances 0.000 description 12
- 230000007797 corrosion Effects 0.000 description 12
- 238000005260 corrosion Methods 0.000 description 12
- 238000005530 etching Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 238000009713 electroplating Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 239000002243 precursor Substances 0.000 description 9
- 239000004593 Epoxy Substances 0.000 description 8
- 239000011889 copper foil Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 7
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 5
- LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 238000010292 electrical insulation Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 125000000524 functional group Chemical group 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000001699 photocatalysis Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 241000283690 Bos taurus Species 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000001879 gelation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 150000003961 organosilicon compounds Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000000191 radiation effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- OMIHGPLIXGGMJB-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]hepta-1,3,5-triene Chemical compound C1=CC=C2OC2=C1 OMIHGPLIXGGMJB-UHFFFAOYSA-N 0.000 description 1
- 244000025254 Cannabis sativa Species 0.000 description 1
- 235000012766 Cannabis sativa ssp. sativa var. sativa Nutrition 0.000 description 1
- 235000012765 Cannabis sativa ssp. sativa var. spontanea Nutrition 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920006231 aramid fiber Polymers 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 235000009120 camo Nutrition 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 235000005607 chanvre indien Nutrition 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011487 hemp Substances 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical group [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000012463 white pigment Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3452—Solder masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
- H05K1/112—Pads for surface mounting, e.g. lay-out directly combined with via connections
- H05K1/113—Via provided in pad; Pad over filled via
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
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- H05K2201/0209—Inorganic, non-metallic particles
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- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
- H05K2201/0979—Redundant conductors or connections, i.e. more than one current path between two points
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
- H05K2201/2054—Light-reflecting surface, e.g. conductors, substrates, coatings, dielectrics
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Description
さらに樹脂からなる基板は、柔軟性がありかつ復元力があるため、薄い基板であっても、銅、アルミニウム、ステンレス等からなるメタル基板のように塑性変形することなく、変形後にもとの形状に復元することができる。このため、落下による強い衝撃あるいは取り扱いによる変形が発生してももとの形状に戻ることができる。このため、LED基板に発光素子を実装する際あるいは発光モジュールを機器に実装する際に容易に取り扱うことができる。
本実施形態において、フィルド導体10bの形状は、LED実装面側(第1面:Z1側)に向かって縮径されるようにテーパしたテーパ円柱(円錐台)である。しかしこれに限定されず、フィルド導体10bの形状は、LED実装裏側(第2面:Z2側)に向かって縮径されるようにテーパしたテーパ円柱(円錐台)、あるいは第1面、第2面からそれぞれ中央に向かって縮径されるようにテーパした中央のくびれた形状などであってもよい。
本実施形態のLED基板に発光素子200が実装されることで、発光モジュール1000となる。本実施形態では、発光素子200が、樹脂基板10の第1面F1側に実装される(図2参照)。
本実施形態の発光モジュールを有する機器は、LED基板のソルダーレジスト層の電気絶縁性が低下しにくいので、LED素子に効率良く電力を供給することができ、高い効率でLED素子を発光させることができる。本実施形態の発光素子のソルダーレジスト層は、黄色あるいは褐色に変色しにくいので、高い反射率を維持することができる。本実施形態の発光素子のソルダーレジスト層は、黄色あるいは褐色に変色しにくいので、発光モジュールから発せられる光の色を維持しやすくすることができる。
光の異なる材料からなるソルダーレジストの光の反射率は、所定の波長範囲における分光反射率を以下の方法により測定した。
各ソルダーレジスト層について耐久試験(エージング試験)を行った結果を示す。この耐久試験では、温度150℃でソルダーレジスト層を処理し、発光素子200を長時間動作させ、所定のタイミング(0時間、100時間、200時間)で、発光素子200から発せられる光を想定した波長450nmの光に対する各ソルダーレジスト層の反射率を測定した。具体的には、異なる材料からなる各ソルダーレジスト層について、透明な1mmのガラス板に各ソルダーレジスト層の材料を塗布し硬化させて厚さ20μmの各ソルダーレジスト層を備えた測定サンプルを作成した。そして、各測定サンプルについて、150℃で、0時間、100時間、200時間処理した後における450nmにおける反射率を分光光度計UV−3150(株式会社島津製作所)を用いて測定し、反射率とした。
10a 孔
10b フィルド導体
10c 非貫通孔
11 ソルダーレジスト層(反射膜)
11a、11b 素子部
21、22 導体層
21a、22a 導体パターン
21b、22b 耐食膜
21c、21d 配線パターン
100 LED基板
101 金属基板
102 絶縁層
200 発光素子
200a 半田
200b ワイヤ
1000 発光モジュール
1001、1002 銅箔
1003 めっき膜
1004、1005 エッチングレジスト
1004a、1005a 開口部
2000 両面銅張積層板
2001 無電解めっき膜
2002、2003 めっきレジスト
2002a、2003a 開口部
3001 酸化チタン粒子
3002 シリコーン樹脂
3003 気孔
Claims (16)
- 基板上に発光素子を実装するための導体層が形成されてなり、当該基板上にソルダーレジスト層が設けられてなり、
前記ソルダーレジスト層は、
平均粒子直径が0.1〜10μmの範囲にある酸化チタン粒子、及び、シリコーン樹脂から構成され、
前記酸化チタン粒子の含有量は、50〜80重量%の範囲で、
前記酸化チタン粒子に付着し前記酸化チタン粒子径よりも小さい気孔を有する、ソルダーレジストであり、
前記ソルダーレジスト層には、前記導体層を露出させるための開口が形成され、
前記ソルダーレジスト層の厚さは前記開口して露出した前記導体層よりも薄い、
ことを特徴とするLED基板。 - 前記基板は、無機材料からなる補強材を含有する樹脂基板であり、
前記ソルダーレジスト層は研磨処理によって前記導体層よりも薄い、
ことを特徴とする請求項1に記載のLED基板。 - 前記無機材料は、ガラス繊維であり、
前記酸化チタン粒子は、アナターゼ型の酸化チタン粒子であり、
前記ソルダーレジスト層は、波長500nm以下の単色光もしくは500nm以下の単色光を含む光を反射する、
ことを特徴とする請求項2に記載のLED基板。 - 前記樹脂基板は、エポキシ樹脂からなる、
ことを特徴とする請求項2又は3に記載のLED基板。 - 前記樹脂基板は、前記樹脂基板を貫通する孔を有し、前記樹脂基板を貫通する孔に導体が充填されてなるフィルド導体を有する、
ことを特徴とする請求項2乃至4のいずれか一項に記載のLED基板。 - 前記フィルド導体は、銅からなる、
ことを特徴とする請求項5に記載のLED基板。 - LED基板上に発光素子が実装された発光モジュールであって、
前記発光素子の実装領域のみに前記フィルド導体を有し、
前記LED基板は、請求項5又は6に記載のLED基板である、
ことを特徴とする発光モジュール。 - 発光モジュールを有する機器であって、
前記発光モジュールは請求項7に記載の発光モジュールである、
ことを特徴とする発光モジュールを有する機器。 - 基板上に発光素子を実装するための導体層を形成する工程と、
当該基板上に、平均粒子直径が0.1〜10μmの範囲にある酸化チタン粒子、及び、シリコーン樹脂から構成されるソルダーレジスト層を設ける工程と、
前記ソルダーレジスト層に前記導体層を露出させるための開口を形成する工程と、
前記ソルダーレジスト層を前記開口して露出する前記導体層よりも薄くする研磨工程と、
を含み、
前記導体層を形成する工程、前記ソルダーレジスト層を設ける工程、前記開口を形成する工程、前記ソルダーレジスト層を研磨する工程の順で行われる、
ことを特徴とするLED基板の製造方法。 - 前記基板は、無機材料からなる補強材を含有する樹脂基板である、
ことを特徴とする請求項9に記載のLED基板の製造方法。 - 前記無機材料は、ガラス繊維である、
ことを特徴とする請求項10に記載のLED基板の製造方法。 - 前記樹脂基板は、エポキシ樹脂からなる、
ことを特徴とする請求項10又は11に記載のLED基板の製造方法。 - 前記樹脂基板を貫通する孔を形成する工程と、
前記樹脂基板を貫通する孔に導体が充填されてなるフィルド導体を形成する工程と、
をさらに含む、
ことを特徴とする請求項10乃至12のいずれか一項に記載のLED基板の製造方法。 - 前記フィルド導体は、銅からなる、
ことを特徴とする請求項13に記載のLED基板の製造方法。 - LED基板に発光素子を実装する発光モジュールの製造方法であって、
前記LED基板は、請求項9乃至14のいずれか一項に記載のLED基板の製造方法により製造されたLED基板である、
ことを特徴とする発光モジュールの製造方法。 - 発光モジュールを有する機器の製造方法であって、
前記発光モジュールは、請求項15に記載の発光モジュールの製造方法により製造された発光モジュールである、
ことを特徴とする発光モジュールを有する機器の製造方法。
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PCT/JP2012/060356 WO2012144493A1 (ja) | 2011-04-18 | 2012-04-17 | ソルダーレジスト、ソルダーレジスト原料、led基板、発光モジュール、発光モジュールを有する機器、led基板の製造方法、発光モジュールの製造方法、及び発光モジュールを有する機器の製造方法 |
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US10204887B2 (en) | 2013-12-18 | 2019-02-12 | Lumileds Llc | Reflective solder mask layer for LED phosphor package |
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JP6537508B2 (ja) * | 2014-06-20 | 2019-07-03 | オリンパス株式会社 | ケーブル接続構造および内視鏡装置 |
TW201602715A (zh) * | 2014-07-07 | 2016-01-16 | Hitachi Maxell | 配列用遮罩及其製造方法 |
JP2016162971A (ja) | 2015-03-04 | 2016-09-05 | パナソニックIpマネジメント株式会社 | Ledモジュール |
US10412829B2 (en) | 2015-08-03 | 2019-09-10 | Soko Kagaku Co., Ltd. | Nitride semiconductor light-emitting element base and manufacturing method thereof |
JP2017168548A (ja) * | 2016-03-15 | 2017-09-21 | ソニー株式会社 | ガラス配線基板及びその製造方法、部品実装ガラス配線基板及びその製造方法、並びに、表示装置用基板 |
JP6698826B2 (ja) * | 2016-04-25 | 2020-05-27 | 京セラ株式会社 | 電子部品搭載用基板、電子装置および電子モジュール |
KR102455096B1 (ko) * | 2016-10-11 | 2022-10-17 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 및 발광소자 패키지 |
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