HK1170849A1 - White color reflecting material and process for production thereof - Google Patents

White color reflecting material and process for production thereof

Info

Publication number
HK1170849A1
HK1170849A1 HK12111498.0A HK12111498A HK1170849A1 HK 1170849 A1 HK1170849 A1 HK 1170849A1 HK 12111498 A HK12111498 A HK 12111498A HK 1170849 A1 HK1170849 A1 HK 1170849A1
Authority
HK
Hong Kong
Prior art keywords
production
white color
reflecting material
color reflecting
white
Prior art date
Application number
HK12111498.0A
Other languages
English (en)
Chinese (zh)
Inventor
田崎益次
五十嵐直人
小田喜勉
吉田舞美
Original Assignee
株式會社朝日橡膠
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=43386647&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=HK1170849(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 株式會社朝日橡膠 filed Critical 株式會社朝日橡膠
Publication of HK1170849A1 publication Critical patent/HK1170849A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0808—Mirrors having a single reflecting layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/23—Sheet including cover or casing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/266—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension of base or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Development (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Photovoltaic Devices (AREA)
  • Optical Elements Other Than Lenses (AREA)
HK12111498.0A 2009-06-26 2012-11-13 White color reflecting material and process for production thereof HK1170849A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009152828 2009-06-26
JP2010065888 2010-03-23
PCT/JP2010/060875 WO2010150880A1 (ja) 2009-06-26 2010-06-25 白色反射材及びその製造方法

Publications (1)

Publication Number Publication Date
HK1170849A1 true HK1170849A1 (en) 2013-03-08

Family

ID=43386647

Family Applications (1)

Application Number Title Priority Date Filing Date
HK12111498.0A HK1170849A1 (en) 2009-06-26 2012-11-13 White color reflecting material and process for production thereof

Country Status (8)

Country Link
US (1) US8704258B2 (xx)
EP (1) EP2448026A4 (xx)
JP (2) JP5746620B2 (xx)
KR (2) KR101821101B1 (xx)
CN (1) CN102473824B (xx)
HK (1) HK1170849A1 (xx)
TW (1) TWI477555B (xx)
WO (1) WO2010150880A1 (xx)

Families Citing this family (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2448026A4 (en) 2009-06-26 2013-08-14 Asahi Rubber Inc REFLECTIVE MATERIAL OF WHITE COLOR AND PRODUCTION PROCESS
US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
US9293667B2 (en) 2010-08-19 2016-03-22 Soraa, Inc. System and method for selected pump LEDs with multiple phosphors
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
US20110215348A1 (en) * 2010-02-03 2011-09-08 Soraa, Inc. Reflection Mode Package for Optical Devices Using Gallium and Nitrogen Containing Materials
JP6157118B2 (ja) 2010-03-23 2017-07-05 株式会社朝日ラバー 可撓性反射基材、その製造方法及びその反射基材に用いる原材料組成物
US8896235B1 (en) 2010-11-17 2014-11-25 Soraa, Inc. High temperature LED system using an AC power source
JP5274586B2 (ja) 2011-01-17 2013-08-28 キヤノン・コンポーネンツ株式会社 フレキシブル回路基板
US9232634B2 (en) 2011-01-17 2016-01-05 Canon Components, Inc. Flexible circuit board for mounting light emitting element, illumination apparatus, and vehicle lighting apparatus
JP5543386B2 (ja) * 2011-01-21 2014-07-09 スタンレー電気株式会社 発光装置、その製造方法及び照明装置
JP5582048B2 (ja) * 2011-01-28 2014-09-03 日亜化学工業株式会社 発光装置
EP2500623A1 (en) 2011-03-18 2012-09-19 Koninklijke Philips Electronics N.V. Method for providing a reflective coating to a substrate for a light-emitting device
JP5743641B2 (ja) * 2011-03-30 2015-07-01 日本タングステン株式会社 Ｌｅｄパッケージ
JP5745319B2 (ja) * 2011-04-14 2015-07-08 日東電工株式会社 蛍光反射シート、および、発光ダイオード装置の製造方法
JP5670250B2 (ja) * 2011-04-18 2015-02-18 イビデン株式会社 Ｌｅｄ基板、発光モジュール、発光モジュールを有する機器、ｌｅｄ基板の製造方法、発光モジュールの製造方法、及び発光モジュールを有する機器の製造方法
JP2012227294A (ja) * 2011-04-18 2012-11-15 Ibiden Co Ltd Ｌｅｄ基板、発光モジュール、ｌｅｄ基板の製造方法、及び発光モジュールの製造方法
JP5791947B2 (ja) * 2011-04-18 2015-10-07 イビデン株式会社 Ｌｅｄ基板の製造方法
JP2012243846A (ja) * 2011-05-17 2012-12-10 Sumitomo Chemical Co Ltd 金属ベース回路基板および発光素子
JP2013004905A (ja) * 2011-06-21 2013-01-07 Mitsubishi Chemicals Corp 半導体発光装置用パッケージ及び半導体発光装置
US9941435B2 (en) * 2011-07-01 2018-04-10 Sunpower Corporation Photovoltaic module and laminate
JP5682497B2 (ja) 2011-07-29 2015-03-11 信越化学工業株式会社 表面実装型発光装置の製造方法及びリフレクター基板
JP5764423B2 (ja) * 2011-08-02 2015-08-19 日東電工株式会社 光半導体装置用エポキシ樹脂組成物およびそれを用いて得られる光半導体装置用リードフレームまたは光半導体装置用基板、ならびに光半導体装置
JP6034175B2 (ja) * 2012-01-10 2016-11-30 ローム株式会社 Ｌｅｄモジュール
JP2013191687A (ja) * 2012-03-13 2013-09-26 Sekisui Chem Co Ltd 光半導体装置の製造方法及び光半導体装置
JP2013197505A (ja) * 2012-03-22 2013-09-30 Toyoda Gosei Co Ltd 発光装置
US20130264577A1 (en) * 2012-04-07 2013-10-10 Axlen, Inc. High flux high brightness led lighting devices
DE102012213178A1 (de) * 2012-04-30 2013-10-31 At & S Austria Technologie & Systemtechnik Aktiengesellschaft LED-Modul mit Leiterplatte
JP5609925B2 (ja) * 2012-07-09 2014-10-22 日亜化学工業株式会社 発光装置
US20150162511A1 (en) * 2012-07-27 2015-06-11 Konica Minolta, Inc. Led device and method for manufacturing same
JP2014072450A (ja) * 2012-09-28 2014-04-21 Hitachi Chemical Co Ltd 半導体基板パッシベーション膜形成用組成物、パッシベーション膜付半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法
CN104704400B (zh) 2012-10-01 2018-01-09 阿科玛法国公司 光学光漫射器及用于其测量的方法
JP6344881B2 (ja) * 2012-10-01 2018-06-20 株式会社朝日ラバー 反射材の製造方法
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US9133389B2 (en) 2012-10-31 2015-09-15 Empire Technology Development Llc Light guide structure and illuminating device
JP6010758B2 (ja) * 2012-11-14 2016-10-19 パナソニックＩｐマネジメント株式会社 太陽電池モジュール
US9761763B2 (en) 2012-12-21 2017-09-12 Soraa, Inc. Dense-luminescent-materials-coated violet LEDs
KR101870117B1 (ko) 2012-12-27 2018-06-25 다우 실리콘즈 코포레이션 반사 및 난연 특성이 탁월한 용품의 형성을 위한 조성물 및 이로부터 형성된 용품
JP6010455B2 (ja) * 2012-12-27 2016-10-19 信越化学工業株式会社 集光型太陽電池モジュール
JP2014130916A (ja) * 2012-12-28 2014-07-10 Toshiba Lighting & Technology Corp 発光モジュール用基板及び発光モジュール用基板の製造方法
WO2014109293A1 (ja) * 2013-01-10 2014-07-17 コニカミノルタ株式会社 Ｌｅｄ装置およびその製造に用いられる塗布液
JP6068175B2 (ja) * 2013-02-12 2017-01-25 新光電気工業株式会社 配線基板、発光装置、配線基板の製造方法及び発光装置の製造方法
JP5977686B2 (ja) * 2013-02-13 2016-08-24 信越化学工業株式会社 集光型太陽電池モジュールの製造方法及び集光型太陽電池モジュール
JP5996085B2 (ja) * 2013-02-27 2016-09-21 株式会社朝日ラバー 白色反射膜用インク、白色反射膜用粉体塗料及び白色反射膜の製造方法
JP6088310B2 (ja) * 2013-03-22 2017-03-01 日本タングステン株式会社 発光体保持基板およびその製造方法
JP2014187081A (ja) * 2013-03-22 2014-10-02 Nichia Chem Ind Ltd 発光装置
JP6255747B2 (ja) * 2013-07-01 2018-01-10 日亜化学工業株式会社 発光装置
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
TW201505132A (zh) * 2013-07-25 2015-02-01 Lingsen Precision Ind Ltd 光學模組的封裝結構
US9410664B2 (en) 2013-08-29 2016-08-09 Soraa, Inc. Circadian friendly LED light source
KR101506990B1 (ko) * 2014-03-31 2015-04-01 주식회사 산코코리아 태양전지 셀 연결부재
CN104977635A (zh) * 2014-04-02 2015-10-14 鸿威光电股份有限公司 反射片
US9671085B2 (en) 2014-04-22 2017-06-06 Dow Corning Corporation Reflector for an LED light source
JP5894352B1 (ja) 2014-05-09 2016-03-30 京セラ株式会社 発光素子搭載用基板および発光装置
JP6693889B2 (ja) 2014-05-14 2020-05-13 カリフォルニア インスティチュート オブ テクノロジー 大規模宇宙太陽光発電所：誘導可能ビームを用いる送電
WO2015175839A1 (en) 2014-05-14 2015-11-19 California Institute Of Technology Large-scale space-based solar power station: packaging, deployment and stabilization of lightweight structures
CN105322433B (zh) * 2014-05-28 2020-02-04 深圳光峰科技股份有限公司 波长转换装置及其相关发光装置
WO2015187739A1 (en) * 2014-06-02 2015-12-10 California Institute Of Technology Large-scale space-based solar power station: efficient power generation tiles
CN104061477B (zh) * 2014-07-08 2016-02-17 惠州奔达电子有限公司 一种高效散热的led光源模组
JP5946592B2 (ja) * 2014-07-17 2016-07-06 フドー株式会社 光反射体材料、光反射体、及び照明器具
JP6590445B2 (ja) * 2014-09-10 2019-10-16 ダウ・東レ株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
CN107112400A (zh) * 2014-10-27 2017-08-29 汉高股份有限及两合公司 制造光学半导体装置的方法及用于该方法的有机硅树脂组合物
US20160163901A1 (en) * 2014-12-08 2016-06-09 Benjamin Ian Hsia Laser stop layer for foil-based metallization of solar cells
JP6762736B2 (ja) * 2015-03-16 2020-09-30 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 光反射層付光半導体素子、および、光反射層および蛍光体層付光半導体素子の製造方法
JP6099838B1 (ja) * 2015-05-28 2017-03-22 フドー株式会社 光反射体材料、光反射体、及び照明器具
US10696428B2 (en) 2015-07-22 2020-06-30 California Institute Of Technology Large-area structures for compact packaging
JP6675111B2 (ja) * 2015-08-03 2020-04-01 パナソニックＩｐマネジメント株式会社 Ｌｅｄモジュール
US10992253B2 (en) 2015-08-10 2021-04-27 California Institute Of Technology Compactable power generation arrays
EP3334655B1 (en) 2015-08-10 2021-03-24 California Institute of Technology Systems and methods for performing shape estimation using sun sensors in large-scale space-based solar power stations
JP6237826B2 (ja) * 2015-09-30 2017-11-29 日亜化学工業株式会社 パッケージ及び発光装置、並びにそれらの製造方法
CN106626645B (zh) * 2015-10-29 2019-07-23 宁波长阳科技股份有限公司 一种太阳能电池背板及其制备方法
CN105542516B (zh) * 2015-12-07 2017-11-10 陕西理工学院 一种可反射近红外线黄色颜料及其制备方法
CN106972093B (zh) * 2016-01-13 2019-01-08 光宝光电(常州)有限公司 发光二极管封装结构
JP7030057B2 (ja) * 2016-03-10 2022-03-04 ルミレッズ ホールディング ベーフェー Ｌｅｄモジュール
JP2017199803A (ja) * 2016-04-27 2017-11-02 日立マクセル株式会社 三次元成形回路部品
CN107403791B (zh) * 2016-05-18 2020-04-10 光宝光电(常州)有限公司 发光显示器以及形成发光显示器的方法
JP6418200B2 (ja) 2016-05-31 2018-11-07 日亜化学工業株式会社 発光装置及びその製造方法
CN106365661B (zh) * 2016-09-12 2019-02-26 中国科学院兰州化学物理研究所 一种多层结构氧化铝复合陶瓷及其制备方法
CN106887505B (zh) * 2017-04-24 2019-07-16 芜湖聚飞光电科技有限公司 一种单面发光芯片级led的制作方法
US10224358B2 (en) * 2017-05-09 2019-03-05 Lumileds Llc Light emitting device with reflective sidewall
JP7048879B2 (ja) * 2017-10-12 2022-04-06 日亜化学工業株式会社 発光装置
JP7366016B2 (ja) 2017-11-10 2023-10-20 スリーエム イノベイティブ プロパティズ カンパニー 屋根コーティング組成物、使用方法、及び物品
KR102367879B1 (ko) 2017-11-17 2022-02-25 모멘티브퍼포먼스머티리얼스코리아 주식회사 실리콘계 반사재 조성물 및 이를 이용하여 형성된 광학 장치
CN108231973B (zh) * 2017-12-08 2019-08-27 开发晶照明（厦门）有限公司 封装支架
US11590749B2 (en) 2018-01-19 2023-02-28 Hewlett-Packard Development Company, L.P. Flexible packaging material
CN108538996A (zh) * 2018-03-07 2018-09-14 广州硅能照明有限公司 一种提高cob光输出的方法
KR102533213B1 (ko) 2018-07-16 2023-05-17 삼성전자주식회사 액정표시장치
US11634240B2 (en) 2018-07-17 2023-04-25 California Institute Of Technology Coilable thin-walled longerons and coilable structures implementing longerons and methods for their manufacture and coiling
US11862736B2 (en) * 2018-09-17 2024-01-02 GBT Tokenize Corp. Multi-dimensional photonic integrated circuits and memory structure having optical components mounted on multiple planes of a multi-dimensional package
KR102654268B1 (ko) * 2018-10-10 2024-04-03 삼성디스플레이 주식회사 표시 장치
CN111087819A (zh) * 2018-10-23 2020-05-01 北京科化新材料科技有限公司 一种液体硅材料复合物及其制备方法和应用
US11772826B2 (en) 2018-10-31 2023-10-03 California Institute Of Technology Actively controlled spacecraft deployment mechanism
KR20210105894A (ko) * 2018-12-27 2021-08-27 덴카 주식회사 형광체 기판, 발광 기판 및 조명 장치
US10720551B1 (en) * 2019-01-03 2020-07-21 Ford Global Technologies, Llc Vehicle lamps
CN110028706A (zh) * 2019-04-09 2019-07-19 深圳市圆方科技新材料有限公司 一种具有红外线能量反射的橡胶及其制造方法
US11882651B2 (en) * 2019-05-23 2024-01-23 Signify Holding B.V. Stable PCB for solid state light source application
JP2021015250A (ja) * 2019-07-16 2021-02-12 株式会社朝日ラバー 光学部材、及びそれの製造方法
JP2021076753A (ja) * 2019-11-11 2021-05-20 株式会社朝日ラバー シリコーン樹脂製紫外線反射保護基材、その製造方法、及びそれに用いる原材料組成物
CN110903695B (zh) * 2019-12-23 2022-06-24 江门市阪桥电子材料有限公司 一种具有高反射性能的硅胶油墨
US11806425B2 (en) 2020-10-02 2023-11-07 Michael E. Stein Chemical composition and related methods
CN115260983B (zh) * 2022-08-01 2024-04-05 旭宇光电（深圳）股份有限公司 Led封装材料、led光源及其封装方法

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05315654A (ja) 1992-05-08 1993-11-26 Denki Kagaku Kogyo Kk 発光ダイオードランプ
US6468638B2 (en) 1999-03-16 2002-10-22 Alien Technology Corporation Web process interconnect in electronic assemblies
JP4101468B2 (ja) 2001-04-09 2008-06-18 豊田合成株式会社 発光装置の製造方法
US6632892B2 (en) 2001-08-21 2003-10-14 General Electric Company Composition comprising silicone epoxy resin, hydroxyl compound, anhydride and curing catalyst
JP4180844B2 (ja) 2002-06-06 2008-11-12 昭和電工株式会社 硬化性難燃組成物、その硬化物及びその製造方法
JP4774201B2 (ja) * 2003-10-08 2011-09-14 日亜化学工業株式会社 パッケージ成形体及び半導体装置
JP5021151B2 (ja) * 2003-11-19 2012-09-05 株式会社カネカ 半導体のパッケージ用硬化性樹脂組成物および半導体
JP2006124600A (ja) 2004-11-01 2006-05-18 Teijin Chem Ltd 光高反射性ポリカーボネート樹脂組成物およびその製造方法
JP4371234B2 (ja) 2005-03-03 2009-11-25 信越化学工業株式会社 フレキシブル金属箔ポリイミド積層板
US7745818B2 (en) 2005-04-08 2010-06-29 Nichia Corporation Light emitting device with silicone resin layer formed by screen printing
JP4634856B2 (ja) 2005-05-12 2011-02-16 利昌工業株式会社 白色プリプレグ、白色積層板、及び金属箔張り白色積層板
TWI256737B (en) 2005-05-19 2006-06-11 Pi-Fu Yang One-block light-emitting device and manufacturing method thereof
JP2006343445A (ja) 2005-06-08 2006-12-21 Mitsubishi Engineering Plastics Corp 光反射材及びその製造法
JP5196711B2 (ja) 2005-07-26 2013-05-15 京セラ株式会社 発光装置およびそれを用いた照明装置
WO2007072659A1 (ja) * 2005-12-20 2007-06-28 Toshiba Lighting & Technology Corporation 発光装置
WO2007074892A1 (ja) 2005-12-26 2007-07-05 Teijin Limited 透明フィルム
JP2007270054A (ja) * 2006-03-31 2007-10-18 Jsr Corp 金属酸化物微粒子含有ポリシロキサン組成物およびその製造方法
ATE530946T1 (de) * 2006-08-22 2011-11-15 Konica Minolta Holdings Inc Anzeigeelement
CN101522838B (zh) 2006-10-05 2012-07-04 陶氏康宁公司 有机硅树脂膜及其制备方法
US20080117619A1 (en) 2006-11-21 2008-05-22 Siew It Pang Light source utilizing a flexible circuit carrier and flexible reflectors
JP2008143981A (ja) 2006-12-07 2008-06-26 Three M Innovative Properties Co 光反射性樹脂組成物、発光装置及び光学表示装置
JP2008159713A (ja) 2006-12-21 2008-07-10 Momentive Performance Materials Japan Kk 発光装置
JP2008187030A (ja) 2007-01-30 2008-08-14 Stanley Electric Co Ltd 発光装置
JP2008222828A (ja) 2007-03-12 2008-09-25 Momentive Performance Materials Japan Kk 凸レンズ形成用シリコーンゴム組成物及びそれを用いた光半導体装置
JP4973279B2 (ja) * 2007-03-29 2012-07-11 豊田合成株式会社 発光装置及びその製造方法
JP2008251316A (ja) 2007-03-30 2008-10-16 Hitachi Ltd プラズマディスプレイパネル及びその製造方法
JP4771179B2 (ja) 2007-05-31 2011-09-14 東芝ライテック株式会社 照明装置
JP2009021394A (ja) * 2007-07-12 2009-01-29 Nitto Denko Corp 光半導体素子収納用実装パッケージ用樹脂組成物およびそれを用いて得られる光半導体発光装置
JP2009024116A (ja) * 2007-07-23 2009-02-05 Sony Corp 硬化性樹脂材料−微粒子複合材料及びその製造方法、光学材料、並びに発光装置
US20090032829A1 (en) 2007-07-30 2009-02-05 Tong Fatt Chew LED Light Source with Increased Thermal Conductivity
US7968899B2 (en) 2007-08-27 2011-06-28 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. LED light source having improved resistance to thermal cycling
JP2009135485A (ja) 2007-11-07 2009-06-18 Mitsubishi Chemicals Corp 半導体発光装置及びその製造方法
JP2009129801A (ja) * 2007-11-27 2009-06-11 Denki Kagaku Kogyo Kk 金属ベース回路基板
JP4623322B2 (ja) 2007-12-26 2011-02-02 信越化学工業株式会社 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物並びに光半導体ケース及びその成形方法
JP5221122B2 (ja) 2007-12-28 2013-06-26 株式会社朝日ラバー シリコーン樹脂基材
JP2009173773A (ja) 2008-01-24 2009-08-06 Toshiba Corp シリコーン樹脂組成物および半導体装置
JP5064254B2 (ja) 2008-01-30 2012-10-31 日東電工株式会社 光半導体素子封止用樹脂シートおよび光半導体装置
JP4678415B2 (ja) 2008-03-18 2011-04-27 信越化学工業株式会社 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物並びに光半導体ケース
JP2009244551A (ja) * 2008-03-31 2009-10-22 Konica Minolta Business Technologies Inc 画像表示装置用表示粒子および画像表示装置
JP5355030B2 (ja) 2008-04-24 2013-11-27 シチズンホールディングス株式会社 Ｌｅｄ光源及びｌｅｄ光源の色度調整方法
JP5289835B2 (ja) 2008-06-25 2013-09-11 シャープ株式会社 発光装置およびその製造方法
KR101277778B1 (ko) * 2008-12-03 2013-06-24 신닛테츠스미킨 카부시키카이샤 도장 금속재 및 그 제조 방법
JP2010232252A (ja) 2009-03-26 2010-10-14 Unon Giken:Kk 白色反射層を有するカバーレイフィルム
EP2448026A4 (en) 2009-06-26 2013-08-14 Asahi Rubber Inc REFLECTIVE MATERIAL OF WHITE COLOR AND PRODUCTION PROCESS

Also Published As

Publication number Publication date
CN102473824B (zh) 2015-08-05
JPWO2010150880A1 (ja) 2012-12-10
US8704258B2 (en) 2014-04-22
CN102473824A (zh) 2012-05-23
TWI477555B (zh) 2015-03-21
JP2014078041A (ja) 2014-05-01
KR20120123242A (ko) 2012-11-08
WO2010150880A1 (ja) 2010-12-29
US20120138997A1 (en) 2012-06-07
KR20170028456A (ko) 2017-03-13
TW201120142A (en) 2011-06-16
EP2448026A4 (en) 2013-08-14
JP5746620B2 (ja) 2015-07-08
EP2448026A1 (en) 2012-05-02
KR101821101B1 (ko) 2018-01-22

Similar Documents

Publication Publication Date Title
HK1170849A1 (en) White color reflecting material and process for production thereof
EP2291419A4 (en) POLYMACROMONOMER AND PROCESS FOR PRODUCING THE SAME
SG10201403566SA (en) Composition and process for production thereof
EP2451259A4 (en) MODULE AND PRODUCTION METHOD THEREOF
HK1136314A1 (en) Improvement of protein production
EP2412691A4 (en) FLUORESCENT ZIRCONOXIDE MATERIAL
EP2471820A4 (en) CELLULOSE RESIN AND METHOD FOR PRODUCING THE SAME
EP2271636A4 (en) METHOD FOR PRODUCING DIANEHYDRO SUGAR
PL2237677T3 (pl) Sposób wytwarzania materiału pochodzącego z kakao
GB0809921D0 (en) Product and process therefor
EP2445947A4 (en) THIOURETHANE BASED LENS ELEMENTS AND METHODS OF MAKING SAME
HK1193357A1 (zh) 藻青素二肽的生物技術製備
EP2374930A4 (en) RAW PAPER, METHOD OF MANUFACTURE AND APPLICATION THEREOF
GB2487704B (en) Container and its production process
EP2251421A4 (en) STABILIZED TRANSGLUTAMINASE AND METHOD FOR PRODUCING THE SAME
IL214375A0 (en) Novel peptides and methods for producing them
EP2305601A4 (en) NANOTUBE-NANOCORNET COMPOSITE AND METHOD FOR THE PRODUCTION THEREOF
EP2189476A4 (en) NOVEL POLYPEPTIDE AND MANUFACTURING METHOD THEREFOR
EP2438922A4 (en) AMPLIFIER FOR COLLAGEN PRODUCTION
GB2457820B (en) Production process
EP2602303A4 (en) SURFACE-TREATED FLUORESCENT MATERIAL AND PROCESS FOR PRODUCING SURFACE-TREATED FLUORESCENT MATERIAL
ZA201008750B (en) Process and plant for producing calcine products
EG26103A (en) Combustion treatment
GB0906999D0 (en) Ceramic materials and method fo production
EP2256210A4 (en) WICKEROL AND MANUFACTURING METHOD THEREFOR