JPH09500690A - 反応スパッタ付着に使用する静止有孔プレート - Google Patents

反応スパッタ付着に使用する静止有孔プレート

Info

Publication number
JPH09500690A
JPH09500690A JP7505135A JP50513595A JPH09500690A JP H09500690 A JPH09500690 A JP H09500690A JP 7505135 A JP7505135 A JP 7505135A JP 50513595 A JP50513595 A JP 50513595A JP H09500690 A JPH09500690 A JP H09500690A
Authority
JP
Japan
Prior art keywords
substrate
target
plate
holes
sputter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP7505135A
Other languages
English (en)
Japanese (ja)
Inventor
ディー． ハーウィット，スチーブン
ワグナー，イスラエル
Original Assignee
マティリアルズ リサーチ コーポレイション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by マティリアルズ リサーチ コーポレイション filed Critical マティリアルズ リサーチ コーポレイション
Publication of JPH09500690A publication Critical patent/JPH09500690A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP7505135A 1993-07-22 1994-06-13 反応スパッタ付着に使用する静止有孔プレート Withdrawn JPH09500690A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/095,950 1993-07-22
US08/095,950 US5415753A (en) 1993-07-22 1993-07-22 Stationary aperture plate for reactive sputter deposition
PCT/US1994/006716 WO1995003436A1 (en) 1993-07-22 1994-06-13 Stationary aperture plate for reactive sputter deposition

Publications (1)

Publication Number Publication Date
JPH09500690A true JPH09500690A (ja) 1997-01-21

Family

ID=22254331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7505135A Withdrawn JPH09500690A (ja) 1993-07-22 1994-06-13 反応スパッタ付着に使用する静止有孔プレート

Country Status (8)

Country Link
US (1) US5415753A (enExample)
EP (1) EP0710299A1 (enExample)
JP (1) JPH09500690A (enExample)
AU (1) AU7107994A (enExample)
CA (1) CA2164975A1 (enExample)
SG (1) SG47675A1 (enExample)
TW (1) TW285752B (enExample)
WO (1) WO1995003436A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011524471A (ja) * 2008-06-17 2011-09-01 アプライド マテリアルズ インコーポレイテッド 均一蒸着のための装置及び方法
KR20180063347A (ko) * 2015-10-27 2018-06-11 어플라이드 머티어리얼스, 인코포레이티드 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터
JP2020128587A (ja) * 2019-02-12 2020-08-27 株式会社アルバック スパッタリング装置

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* Cited by examiner, † Cited by third party
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GB9701114D0 (en) * 1997-01-20 1997-03-12 Coherent Optics Europ Ltd Three-dimensional masking method for control of optical coating thickness
JPH10219430A (ja) * 1997-02-05 1998-08-18 Minolta Co Ltd マグネトロンスパッタ法により得られる化合物薄膜ならびにそれを製造するための方法および装置
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EP0860514B1 (en) * 1997-02-19 2004-11-03 Canon Kabushiki Kaisha Reactive sputtering apparatus and process for forming thin film using same
US6238527B1 (en) * 1997-10-08 2001-05-29 Canon Kabushiki Kaisha Thin film forming apparatus and method of forming thin film of compound by using the same
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EP0710299A1 (en) 1996-05-08
US5415753A (en) 1995-05-16
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SG47675A1 (en) 1998-04-17
TW285752B (enExample) 1996-09-11

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