JP5985581B2 - 処理装置及びコリメータ - Google Patents
処理装置及びコリメータ Download PDFInfo
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- JP5985581B2 JP5985581B2 JP2014225605A JP2014225605A JP5985581B2 JP 5985581 B2 JP5985581 B2 JP 5985581B2 JP 2014225605 A JP2014225605 A JP 2014225605A JP 2014225605 A JP2014225605 A JP 2014225605A JP 5985581 B2 JP5985581 B2 JP 5985581B2
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
Description
Claims (13)
- 粒子を飛ばすことが可能なターゲットと、
前記ターゲットから離間して配置された第1のステージと、
前記ターゲットと前記第1のステージとの間に配置され、複数の第1の壁と、少なくとも一つの第1の開口部が設けられた複数の第2の壁と、を有し、前記複数の第1の壁及び前記複数の第2の壁によって、前記ターゲットから前記第1のステージへ向かう方向である第1の方向に延びる複数の第1の貫通孔を形成する第1のコリメータと、
を具備する処理装置。 - 前記コリメータは、前記ターゲットと向き合う領域に前記第2の壁が前記第1の壁よりも多く配置され、前記ターゲットから外れた領域に前記第1の壁が前記第2の壁よりも多く配置される、請求項1の処理装置。
- 前記第1のコリメータは、第1の部分と、第2の部分と、を有し、
前記第1の方向に飛ぶ前記粒子が前記第1の部分に向かう量に対する、前記第1の方向に対して傾斜する方向に飛ぶ前記粒子が前記第1の部分に向かう量の割合は、前記第1の方向に飛ぶ前記粒子が前記第2の部分に向かう量に対する、前記第1の方向に対して傾斜する方向に飛ぶ前記粒子が前記第2の部分に向かう量の割合よりも大きく、
前記第1の部分において、前記第1の壁は前記第2の壁よりも多く配置され、
前記第2の部分において、前記第2の壁は前記第1の壁よりも多く配置される、
請求項1の処理装置。 - 前記複数の第1の壁と前記複数の第2の壁とは、前記ターゲットの形状に対して所定の分布で配置される、請求項1の処理装置。
- 前記複数の第2の壁は、第1の連通壁と、前記第1の連通壁よりも前記第1の開口部の密度が大きい第2の連通壁と、を有する、請求項1乃至請求項4のいずれか一つの処理装置。
- 前記第1の壁及び前記第2の壁は、前記ターゲットに向く一方の端部から、前記第1のステージに向く他方の端部に向かうに従って厚くなる、請求項1乃至請求項5のいずれか一つの処理装置。
- 前記第1の開口部は、前記第1の方向に対して傾斜する方向に延びる、請求項1乃至請求項6のいずれか一つの処理装置。
- 前記複数の第1の壁及び前記複数の第2の壁の、前記ターゲットに向く一方の端部は、前記ターゲットに対して凹む前記第1のコリメータの一方の端部を形成する、請求項1乃至請求項7のいずれか一つの処理装置。
- 前記第1の開口部の前記第1の方向における長さは、前記第1の開口部の前記第1の方向と直交する方向における長さよりも長い、請求項1乃至請求項8のいずれか一つの処理装置。
- 前記複数の第1の壁と前記複数の第2の壁とは、同心円状に配置された複数の円壁と、前記複数の円壁を接続する複数の接続壁と、を形成する、請求項1乃至請求項9のいずれか一つの処理装置。
- 前記第1の方向に対して傾斜した方向に前記ターゲットから離間して配置された第2のステージと、
前記ターゲットと前記第2のステージとの間に配置され、複数の第3の壁と、少なくとも一つの第2の開口部が設けられた複数の第4の壁と、を有し、前記複数の第3の壁及び前記複数の第4の壁によって前記ターゲットから前記第2のステージに向かう方向に延びる複数の第2の貫通孔を形成する第2のコリメータと、
をさらに具備する請求項1乃至請求項10のいずれか一つの処理装置。 - 複数の第1の壁と、少なくとも一つの開口部が設けられた複数の第2の壁と、を有し、前記複数の第1の壁及び前記複数の第2の壁によって一方向に延びる複数の貫通孔が形成されたコリメータ。
- 粒子を飛ばすことが可能なターゲットと、
前記ターゲットから離間して配置されたステージと、
前記ターゲットから前記ステージへ向かう方向に延びる複数の貫通孔を形成する複数の壁と、少なくとも一つの前記壁に設けられた少なくとも一つの開口部と、を有するコリメータと、
を具備する処理装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014225605A JP5985581B2 (ja) | 2014-11-05 | 2014-11-05 | 処理装置及びコリメータ |
PCT/JP2015/080966 WO2016072400A1 (ja) | 2014-11-05 | 2015-11-02 | 処理装置及びコリメータ |
KR1020177006182A KR101946175B1 (ko) | 2014-11-05 | 2015-11-02 | 처리 장치 및 콜리메이터 |
US15/509,017 US10147589B2 (en) | 2014-11-05 | 2015-11-02 | Processing apparatus and collimator |
CN201580048993.2A CN107075669B (zh) | 2014-11-05 | 2015-11-02 | 处理装置和准直器 |
TW104136545A TWI573216B (zh) | 2014-11-05 | 2015-11-05 | Processing device and collimator |
US16/159,812 US10755904B2 (en) | 2014-11-05 | 2018-10-15 | Processing apparatus and collimator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2014225605A JP5985581B2 (ja) | 2014-11-05 | 2014-11-05 | 処理装置及びコリメータ |
Publications (2)
Publication Number | Publication Date |
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JP2016089224A JP2016089224A (ja) | 2016-05-23 |
JP5985581B2 true JP5985581B2 (ja) | 2016-09-06 |
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Country Status (6)
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US (2) | US10147589B2 (ja) |
JP (1) | JP5985581B2 (ja) |
KR (1) | KR101946175B1 (ja) |
CN (1) | CN107075669B (ja) |
TW (1) | TWI573216B (ja) |
WO (1) | WO2016072400A1 (ja) |
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JP5985581B2 (ja) | 2014-11-05 | 2016-09-06 | 株式会社東芝 | 処理装置及びコリメータ |
JP6039117B1 (ja) * | 2016-01-25 | 2016-12-07 | 株式会社東芝 | 処理装置及びコリメータ |
CN112011776B (zh) * | 2020-08-28 | 2022-10-21 | 北京北方华创微电子装备有限公司 | 半导体工艺设备及其工艺腔室 |
US11851751B2 (en) * | 2021-07-23 | 2023-12-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deposition system and method |
FI20225334A1 (en) * | 2022-04-21 | 2023-10-22 | Biomensio Ltd | Collimator to produce piezoelectric layers having tilted c-axis orientation |
CN115161594B (zh) * | 2022-08-02 | 2023-04-11 | 上海陛通半导体能源科技股份有限公司 | 可改善深孔填充的镀膜设备及方法 |
USD1024149S1 (en) * | 2022-12-16 | 2024-04-23 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
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-
2014
- 2014-11-05 JP JP2014225605A patent/JP5985581B2/ja active Active
-
2015
- 2015-11-02 US US15/509,017 patent/US10147589B2/en active Active
- 2015-11-02 KR KR1020177006182A patent/KR101946175B1/ko active IP Right Grant
- 2015-11-02 WO PCT/JP2015/080966 patent/WO2016072400A1/ja active Application Filing
- 2015-11-02 CN CN201580048993.2A patent/CN107075669B/zh active Active
- 2015-11-05 TW TW104136545A patent/TWI573216B/zh active
-
2018
- 2018-10-15 US US16/159,812 patent/US10755904B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW201622044A (zh) | 2016-06-16 |
US10147589B2 (en) | 2018-12-04 |
KR101946175B1 (ko) | 2019-02-08 |
TWI573216B (zh) | 2017-03-01 |
WO2016072400A1 (ja) | 2016-05-12 |
US10755904B2 (en) | 2020-08-25 |
JP2016089224A (ja) | 2016-05-23 |
CN107075669A (zh) | 2017-08-18 |
KR20170041242A (ko) | 2017-04-14 |
US20190051503A1 (en) | 2019-02-14 |
US20170301525A1 (en) | 2017-10-19 |
CN107075669B (zh) | 2019-10-22 |
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