JPH058583B2 - - Google Patents

Info

Publication number
JPH058583B2
JPH058583B2 JP57204671A JP20467182A JPH058583B2 JP H058583 B2 JPH058583 B2 JP H058583B2 JP 57204671 A JP57204671 A JP 57204671A JP 20467182 A JP20467182 A JP 20467182A JP H058583 B2 JPH058583 B2 JP H058583B2
Authority
JP
Japan
Prior art keywords
conductivity type
region
well region
well
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57204671A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5994861A (ja
Inventor
Tokuo Watanabe
Takahide Ikeda
Kyoshi Tsukuda
Mitsuru Hirao
Toji Mukai
Tatsuya Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP57204671A priority Critical patent/JPS5994861A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to KR8305524A priority patent/KR900000817B1/ko
Priority to DE8383111719T priority patent/DE3379621D1/de
Priority to EP83111719A priority patent/EP0110313B1/en
Publication of JPS5994861A publication Critical patent/JPS5994861A/ja
Priority to US07/159,956 priority patent/US4980744A/en
Priority to US07/176,284 priority patent/US4921811A/en
Priority to US07/631,907 priority patent/US5049967A/en
Priority to US07/735,948 priority patent/US5508549A/en
Publication of JPH058583B2 publication Critical patent/JPH058583B2/ja
Priority to US08/462,902 priority patent/US5672897A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/996—Masterslice integrated circuits using combined field effect technology and bipolar technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP57204671A 1982-11-24 1982-11-24 半導体集積回路装置及びその製造方法 Granted JPS5994861A (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP57204671A JPS5994861A (ja) 1982-11-24 1982-11-24 半導体集積回路装置及びその製造方法
KR8305524A KR900000817B1 (en) 1982-11-24 1983-11-22 Semiconductor ic device manufacturing method
DE8383111719T DE3379621D1 (en) 1982-11-24 1983-11-23 Semiconductor integrated circuit device and a method for manufacturing the same
EP83111719A EP0110313B1 (en) 1982-11-24 1983-11-23 Semiconductor integrated circuit device and a method for manufacturing the same
US07/159,956 US4980744A (en) 1982-11-24 1988-02-24 Semiconductor integrated circuit device and a method for manufacturing the same
US07/176,284 US4921811A (en) 1982-11-24 1988-03-31 Semiconductor integrated circuit device and a method for manufacturing the same
US07/631,907 US5049967A (en) 1982-11-24 1990-12-21 Semiconductor integrated circuit device and a method for manufacturing the same
US07/735,948 US5508549A (en) 1982-11-24 1991-07-25 Semiconductor integrated circuit device and a method for manufacturing the same
US08/462,902 US5672897A (en) 1982-11-24 1995-06-05 Bimos semiconductor integrated circuit device including high speed vertical bipolar transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57204671A JPS5994861A (ja) 1982-11-24 1982-11-24 半導体集積回路装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP1303119A Division JPH065707B2 (ja) 1989-11-24 1989-11-24 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS5994861A JPS5994861A (ja) 1984-05-31
JPH058583B2 true JPH058583B2 (en, 2012) 1993-02-02

Family

ID=16494359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57204671A Granted JPS5994861A (ja) 1982-11-24 1982-11-24 半導体集積回路装置及びその製造方法

Country Status (5)

Country Link
US (5) US4980744A (en, 2012)
EP (1) EP0110313B1 (en, 2012)
JP (1) JPS5994861A (en, 2012)
KR (1) KR900000817B1 (en, 2012)
DE (1) DE3379621D1 (en, 2012)

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JPS5955052A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体集積回路装置の製造方法
JPS5994861A (ja) * 1982-11-24 1984-05-31 Hitachi Ltd 半導体集積回路装置及びその製造方法
JPH0669142B2 (ja) * 1983-04-15 1994-08-31 株式会社日立製作所 半導体集積回路装置
JPS60101965A (ja) * 1983-11-08 1985-06-06 Iwatsu Electric Co Ltd 相補型電界効果トランジスタを有する集積回路
JPS60101963A (ja) * 1983-11-08 1985-06-06 Iwatsu Electric Co Ltd 相補型電界効果トランジスタの製造方法
JPS60124964A (ja) * 1983-12-12 1985-07-04 Fujitsu Ltd 半導体装置の製造方法
DE3474883D1 (en) * 1984-01-16 1988-12-01 Texas Instruments Inc Integrated circuit having bipolar and field effect devices and method of fabrication
JPS61127147A (ja) * 1984-11-26 1986-06-14 Hitachi Ltd 半導体装置
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US4797372A (en) * 1985-11-01 1989-01-10 Texas Instruments Incorporated Method of making a merge bipolar and complementary metal oxide semiconductor transistor device
JPH0770606B2 (ja) * 1985-11-29 1995-07-31 株式会社日立製作所 半導体装置
US4737472A (en) * 1985-12-17 1988-04-12 Siemens Aktiengesellschaft Process for the simultaneous production of self-aligned bipolar transistors and complementary MOS transistors on a common silicon substrate
US4752589A (en) * 1985-12-17 1988-06-21 Siemens Aktiengesellschaft Process for the production of bipolar transistors and complementary MOS transistors on a common silicon substrate
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EP0253724A1 (en) * 1986-07-16 1988-01-20 Fairchild Semiconductor Corporation A method of simultaneously fabricating bipolar and complementary field effect transistors using a minimal number of masks
JP2635961B2 (ja) * 1986-09-26 1997-07-30 株式会社日立製作所 半導体装置の製造方法
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US5093707A (en) * 1988-04-27 1992-03-03 Kabushiki Kaisha Toshiba Semiconductor device with bipolar and cmos transistors
JPH0817179B2 (ja) * 1989-03-14 1996-02-21 株式会社東芝 半導体装置およびその製造方法
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JP2611450B2 (ja) * 1989-08-30 1997-05-21 日本電気株式会社 半導体集積回路及びその製造方法
DE3935538A1 (de) * 1989-10-25 1991-05-02 Thomson Brandt Gmbh Mos-logik in bicmos-schaltkreisen
JP2609746B2 (ja) * 1990-07-19 1997-05-14 株式会社東芝 半導体装置
KR930006735B1 (ko) * 1991-02-28 1993-07-23 삼성전자 주식회사 바이씨모스장치의 제조방법
US5320974A (en) * 1991-07-25 1994-06-14 Matsushita Electric Industrial Co., Ltd. Method for making semiconductor transistor device by implanting punch through stoppers
CA2090918C (en) * 1992-03-25 2006-01-17 Robert Leonard Meiring Components for smoking articles and process for making same
KR0127282B1 (ko) * 1992-05-18 1998-04-02 도요다 요시또시 반도체 장치
US5369429A (en) * 1993-10-20 1994-11-29 Lasermaster Corporation Continuous ink refill system for disposable ink jet cartridges having a predetermined ink capacity
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US5686947A (en) 1995-05-03 1997-11-11 Encad, Inc. Ink jet printer incorporating high volume ink reservoirs
DE19638373B8 (de) * 1995-09-19 2007-08-09 Denso Corp., Kariya Halbleitersensor und sein Herstellungsverfahren
JP2751891B2 (ja) * 1995-09-29 1998-05-18 日本電気株式会社 半導体集積回路
US5999153A (en) * 1996-03-22 1999-12-07 Lind; John Thomas Soft proofing display
US6396109B1 (en) * 1996-12-06 2002-05-28 Texas Instruments Incorporated Isolated NMOS transistor fabricated in a digital BiCMOS process
US6633069B2 (en) * 1997-05-20 2003-10-14 Kabushiki Kaisha Toshiba Semiconductor device
JP3419672B2 (ja) * 1997-12-19 2003-06-23 富士通株式会社 半導体装置及びその製造方法
US6137142A (en) * 1998-02-24 2000-10-24 Sun Microsystems, Inc. MOS device structure and method for reducing PN junction leakage
US6218708B1 (en) * 1998-02-25 2001-04-17 Sun Microsystems, Inc. Back-biased MOS device and method
US6225662B1 (en) 1998-07-28 2001-05-01 Philips Semiconductors, Inc. Semiconductor structure with heavily doped buried breakdown region
JP3223895B2 (ja) * 1998-12-15 2001-10-29 日本電気株式会社 半導体装置の製造方法
US6653708B2 (en) 2000-08-08 2003-11-25 Intersil Americas Inc. Complementary metal oxide semiconductor with improved single event performance
EP1317425B1 (en) * 2000-09-11 2004-11-03 Pfizer Products Inc. Resorcinol derivatives
JP4447768B2 (ja) * 2000-12-01 2010-04-07 三菱電機株式会社 フィールドｍｏｓトランジスタおよびそれを含む半導体集積回路
US6794730B2 (en) * 2000-12-31 2004-09-21 Texas Instruments Incorporated High performance PNP bipolar device fully compatible with CMOS process
JP4676069B2 (ja) * 2001-02-07 2011-04-27 パナソニック株式会社 半導体装置の製造方法
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US6818494B1 (en) * 2001-03-26 2004-11-16 Hewlett-Packard Development Company, L.P. LDMOS and CMOS integrated circuit and method of making
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JP4623885B2 (ja) * 2001-08-16 2011-02-02 ルネサスエレクトロニクス株式会社 半導体記憶装置
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US7453705B2 (en) * 2002-05-07 2008-11-18 Alien Technology Corporation Barrier, such as a hermetic barrier layer for O/PLED and other electronic devices on plastic
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Also Published As

Publication number Publication date
US4980744A (en) 1990-12-25
DE3379621D1 (en) 1989-05-18
EP0110313A3 (en) 1986-02-05
EP0110313A2 (en) 1984-06-13
KR840006872A (ko) 1984-12-03
JPS5994861A (ja) 1984-05-31
US5049967A (en) 1991-09-17
KR900000817B1 (en) 1990-02-17
US4921811A (en) 1990-05-01
EP0110313B1 (en) 1989-04-12
US5672897A (en) 1997-09-30
US5508549A (en) 1996-04-16

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