DE19638373B8 - Halbleitersensor und sein Herstellungsverfahren - Google Patents

Halbleitersensor und sein Herstellungsverfahren Download PDF

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Publication number
DE19638373B8
DE19638373B8 DE19638373A DE19638373A DE19638373B8 DE 19638373 B8 DE19638373 B8 DE 19638373B8 DE 19638373 A DE19638373 A DE 19638373A DE 19638373 A DE19638373 A DE 19638373A DE 19638373 B8 DE19638373 B8 DE 19638373B8
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor sensor
semiconductor
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19638373A
Other languages
English (en)
Other versions
DE19638373B4 (de
DE19638373A1 (de
Inventor
Koki Kariya Mizuno
Hiroshi Kariya Okada
Inao Kariya Toyoda
Masakazu Kariya Kanosue
Yasutoshi Kariya Suzuki
Kenichi Kariya Yokoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP23993395A external-priority patent/JP3508962B2/ja
Priority claimed from JP23993795A external-priority patent/JPH0982985A/ja
Application filed by Denso Corp filed Critical Denso Corp
Publication of DE19638373A1 publication Critical patent/DE19638373A1/de
Application granted granted Critical
Publication of DE19638373B4 publication Critical patent/DE19638373B4/de
Publication of DE19638373B8 publication Critical patent/DE19638373B8/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
DE19638373A 1995-09-19 1996-09-19 Halbleitersensor und sein Herstellungsverfahren Expired - Fee Related DE19638373B8 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP7-239933 1995-09-19
JP23993395A JP3508962B2 (ja) 1995-09-19 1995-09-19 増幅回路内蔵型半導体センサ
JP7-239937 1995-09-19
JP23993795A JPH0982985A (ja) 1995-09-19 1995-09-19 半導体センサの製造方法

Publications (3)

Publication Number Publication Date
DE19638373A1 DE19638373A1 (de) 1997-03-20
DE19638373B4 DE19638373B4 (de) 2007-05-03
DE19638373B8 true DE19638373B8 (de) 2007-08-09

Family

ID=26534497

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19638373A Expired - Fee Related DE19638373B8 (de) 1995-09-19 1996-09-19 Halbleitersensor und sein Herstellungsverfahren

Country Status (2)

Country Link
US (1) US5770883A (de)
DE (1) DE19638373B8 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0822415B1 (de) 1996-07-31 2003-03-26 STMicroelectronics S.r.l. Integrierter kapazitiver Halbleiter-Beschleunigungsmessaufnehmer sowie Verfahren zu seiner Herstellung
US20020003274A1 (en) * 1998-08-27 2002-01-10 Janusz Bryzek Piezoresistive sensor with epi-pocket isolation
JP3506932B2 (ja) * 1998-12-09 2004-03-15 株式会社山武 半導体圧力センサ及びその製造方法
JP2002131161A (ja) * 2000-10-27 2002-05-09 Denso Corp 半導体圧力センサ
JP2002340713A (ja) * 2001-05-10 2002-11-27 Denso Corp 半導体圧力センサ
JP4224993B2 (ja) * 2002-07-11 2009-02-18 株式会社デンソー 物理量検出装置
DE102004021041A1 (de) * 2004-04-29 2005-11-24 Robert Bosch Gmbh Kombinierter Absolutdruck- und Relativdrucksensor
US7691723B2 (en) * 2005-01-07 2010-04-06 Honeywell International Inc. Bonding system having stress control
DE102007053859A1 (de) * 2007-11-09 2009-05-14 Endress + Hauser Gmbh + Co. Kg Druck-Messeinrichtung
US8530985B2 (en) * 2010-03-18 2013-09-10 Chia-Ming Cheng Chip package and method for forming the same
US8656772B2 (en) 2010-03-22 2014-02-25 Honeywell International Inc. Flow sensor with pressure output signal
US8616065B2 (en) 2010-11-24 2013-12-31 Honeywell International Inc. Pressure sensor
US8695417B2 (en) 2011-01-31 2014-04-15 Honeywell International Inc. Flow sensor with enhanced flow range capability
EP2769191B1 (de) 2011-10-21 2020-03-04 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Sic-hochtemperatur-druckwandler
US9003897B2 (en) 2012-05-10 2015-04-14 Honeywell International Inc. Temperature compensated force sensor
US9052217B2 (en) 2012-11-09 2015-06-09 Honeywell International Inc. Variable scale sensor
US9446940B2 (en) 2014-10-03 2016-09-20 Freescale Semiconductor, Inc. Stress isolation for MEMS device
US9837526B2 (en) 2014-12-08 2017-12-05 Nxp Usa, Inc. Semiconductor device wtih an interconnecting semiconductor electrode between first and second semiconductor electrodes and method of manufacture therefor
US9458008B1 (en) * 2015-03-16 2016-10-04 Freescale Semiconductor, Inc. Method of making a MEMS die having a MEMS device on a suspended structure
US10348295B2 (en) 2015-11-19 2019-07-09 Nxp Usa, Inc. Packaged unidirectional power transistor and control circuit therefore
JP2022142118A (ja) * 2021-03-16 2022-09-30 ミネベアミツミ株式会社 センサチップ、力覚センサ装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5541437A (en) * 1994-03-15 1996-07-30 Nippondenso Co., Ltd. Acceleration sensor using MIS-like transistors

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3887937A (en) * 1972-09-21 1975-06-03 Massachusetts Inst Technology Semiconductor sensor
US4736089A (en) * 1980-05-05 1988-04-05 Texas Instruments Incorporated Switching regulator for terminal printhead
JPS5994861A (ja) * 1982-11-24 1984-05-31 Hitachi Ltd 半導体集積回路装置及びその製造方法
JPS6041252A (ja) * 1983-08-17 1985-03-04 Nec Corp 混成集積回路の製造方法
JPH01173846A (ja) * 1987-09-10 1989-07-10 Komatsu Ltd 薄膜圧力センサの製造方法
US5473945A (en) * 1990-02-14 1995-12-12 The Charles Stark Draper Laboratory, Inc. Micromechanical angular accelerometer with auxiliary linear accelerometer
JPH04280476A (ja) * 1991-03-08 1992-10-06 Fuji Electric Co Ltd 半導体圧力センサおよびその調整方法
JPH04365302A (ja) * 1991-06-12 1992-12-17 Tama Electric Co Ltd 機能トリミングが可能な薄膜抵抗器
JP2877173B2 (ja) * 1991-11-06 1999-03-31 富士電機株式会社 半導体圧力センサおよびその保護膜形成方法
US5461916A (en) * 1992-08-21 1995-10-31 Nippondenso Co., Ltd. Mechanical force sensing semiconductor device
JPH06129926A (ja) * 1992-10-20 1994-05-13 Nok Corp 圧力センサ素子の製造方法およびその圧力センサ素子を使用した圧力センサ
US5578843A (en) * 1994-10-06 1996-11-26 Kavlico Corporation Semiconductor sensor with a fusion bonded flexible structure

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5541437A (en) * 1994-03-15 1996-07-30 Nippondenso Co., Ltd. Acceleration sensor using MIS-like transistors

Also Published As

Publication number Publication date
DE19638373B4 (de) 2007-05-03
DE19638373A1 (de) 1997-03-20
US5770883A (en) 1998-06-23

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Legal Events

Date Code Title Description
8127 New person/name/address of the applicant

Owner name: DENSO CORP., KARIYA, AICHI, JP

8110 Request for examination paragraph 44
8381 Inventor (new situation)

Inventor name: OKADA, HIROSHI, KARIYA, AICHI, JP

Inventor name: KANOSUE, MASAKAZU, KARIYA, AICHI, JP

Inventor name: YOKOYAMA, KENICHI, KARIYA, AICHI, JP

Inventor name: MIZUNO, KOKI, KARIYA, AICHI, JP

Inventor name: SUZUKI, YASUTOSHI, KARIYA, AICHI, JP

Inventor name: TOYODA, INAO, KARIYA, AICHI, JP

8396 Reprint of erroneous front page
8364 No opposition during term of opposition
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee