JP6502092B2 - 積層セラミックコンデンサ - Google Patents
積層セラミックコンデンサ Download PDFInfo
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- JP6502092B2 JP6502092B2 JP2014266258A JP2014266258A JP6502092B2 JP 6502092 B2 JP6502092 B2 JP 6502092B2 JP 2014266258 A JP2014266258 A JP 2014266258A JP 2014266258 A JP2014266258 A JP 2014266258A JP 6502092 B2 JP6502092 B2 JP 6502092B2
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- 239000003985 ceramic capacitor Substances 0.000 title claims description 57
- 239000002245 particle Substances 0.000 claims description 116
- 239000000919 ceramic Substances 0.000 claims description 76
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 43
- 229910002113 barium titanate Inorganic materials 0.000 claims description 43
- 229910052788 barium Inorganic materials 0.000 claims description 15
- 229910052719 titanium Inorganic materials 0.000 claims description 14
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 238000005259 measurement Methods 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 2
- 239000000654 additive Substances 0.000 description 21
- 230000000996 additive effect Effects 0.000 description 21
- 239000010936 titanium Substances 0.000 description 20
- 238000009826 distribution Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- 150000001875 compounds Chemical class 0.000 description 12
- 239000002002 slurry Substances 0.000 description 11
- 229910010413 TiO 2 Inorganic materials 0.000 description 9
- 239000002994 raw material Substances 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000010304 firing Methods 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 238000001354 calcination Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052748 manganese Inorganic materials 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- -1 tetragonal compound Chemical class 0.000 description 1
- 150000004685 tetrahydrates Chemical class 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- H—ELECTRICITY
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
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- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
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- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
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- C04B35/4682—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
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Description
積層セラミックコンデンサ1は、規格で定められたチップ寸法及び形状(例えば1.0×0.5×0.5mmの直方体)を有するセラミック焼結体10と、セラミック焼結体10の両側に形成される一対の外部電極20とから概ね構成される。セラミック焼結体10は、Ba及びTiを含む粒子結晶を主成分とし、内部に誘電体層12と内部電極層13とが交互に積層されてなる積層体11と、積層方向上下の最外層として形成されるカバー層15とを有している。
以下、以上説明した本発明の積層セラミックコンデンサの製造方法について説明する。
まず、誘電体層を形成するための原料粉末を用意する。前記誘電体層はBa及びTiを含んでおり、これは通常チタン酸バリウムの粒子の焼結体の形で誘電体層に含まれる。
ドナー元素XとしてMoを用いた。七モリブデン酸六アンモニウム四水和物をイオン交換水に溶解させ、分散剤を添加した水溶液に、BaCO3(30m2/g)及びTiO2(50m2/g)をBa/Tiモル比=1となるよう加えてスラリーとし、ビーズミルを使用して混合・分散した。
粒界=0.67×10-4,
中間部分=0.67×10-4,
中央部分=0.68×10-4。
Mo材料として比表面積5m2/gのMoO3を用い、Mo添加量をMoO3換算で0.2molとした以外は実施例1と同様に積層セラミックコンデンサを作製した。
Mo添加量をMoO3換算で0.3molとした以外は実施例1と同様に積層セラミックコンデンサを作製した。
Mo添加量をMoO3換算で0.2molとし、950℃で平均粒子径150nmのMo含有チタン酸バリウム粒子を合成し、セラミックコンデンサ焼成温度を1300℃として誘電体セラミック粒子の平均粒子径を800nmとした以外は実施例1と同様に積層セラミックコンデンサを作製した。
Mo添加量をMoO3換算で0.2molとし、焼成後誘電体層厚を0.5μm、層数を250層とした以外は実施例1と同様に積層セラミックコンデンサを作製した。
分散剤を添加した水溶液に、BaCO3(比表面積50m2/g)及びTiO2(300m2/g)をBa/Tiモル比=1となるよう加えてスラリーとし、ビーズミルを使用して混合・分散した。前記スラリーを乾燥し水を除去して、890℃で仮焼を行い、SEM写真から求めた平均粒子径が50nmのチタン酸バリウムを合成した。
X成分として、Ta、Nb、W、Mo+Taを用いて、X量をチタン酸バリウム100molとしたとき0.2molとした以外は実施例1と同様にして積層セラミックコンデンサを作製した。なお、X成分の原材料には、比表面積が5m2/g以上の酸化物を用いた。
Moを添加しない以外は実施例1と同様に積層セラミックコンデンサを作製した。
高温加速寿命試験の結果は1500秒となり、DCバイアスの容量減少率は50%であった。Moを添加しなかったので、バイアス特性は比較的良好であったが、寿命値が低い値となった。
平均粒子径80nmのチタン酸バリウムを用いて、チタン酸バリウム100molに対し、MoO3=0.2mol、Ho2O3=0.5mol、MnCO3=0.1mol、V2O5=0.1mol、SiO2=1.0molを添加し、またBaCO3またはTiO2を添加してBa/Tiモル比(Mo固溶チタン酸バリウム及び添加されるBaCO3やTiO2の合計におけるBaとTiのモル比)が1.000となるようにし、溶剤を加えてスラリーとした。以降は実施例1と同様にして積層セラミックコンデンサを作製した。
10 セラミック焼結体
11 積層体
12 誘電体層
13 内部電極層
15 カバー層
20 外部電極
Claims (5)
- 誘電体層と極性の異なる内部電極層とが交互に積層されてなる積層体を備える積層セラミックコンデンサであって、
前記誘電体層は、Ba、Ti及びX(ここで、XはMo,Ta,Nb及びWからなる群より選ばれる少なくとも一種の元素である)を有するセラミック粒子を含み、
前記セラミック粒子を透過型電子顕微鏡で観察したとき、その最大直径に沿った、該直径の中央部分、隣接セラミック粒子との粒界部分、及び中央部分と粒界部分との中間部分の3か所について、TEM−EDS測定でXのピーク強度(XKα)及びBaとTiのピーク強度(BaL+TiK)を求め、その強度比(XKα/(BaL+TiK))を計算し、3か所の強度比の平均値(Ave)を求めたとき、各箇所でのピーク強度比(Pi)の前記平均値(Ave)からのバラツキ;(Pi−Ave)/Ave ×100%が、±5%以内である、積層セラミックコンデンサ。 - 前記誘電体層中におけるXの濃度が、Ti100molに対して0.05〜0.3molである、請求項1に記載の積層セラミックコンデンサ。
- 前記セラミック粒子の平均粒子径が80〜800nmである、請求項1又は2に記載の積層セラミックコンデンサ。
- 前記セラミック粒子が、主にチタン酸バリウムにより構成される、請求項1〜3のいずれかに記載の積層セラミックコンデンサ。
- 前記誘電体層が、前記XとしてMoを有する、請求項1〜4のいずれかに記載の積層セラミックコンデンサ。
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US9919970B2 (en) * | 2015-12-01 | 2018-03-20 | Taiyo Yuden Co., Ltd. | Dielectric material for multilayer ceramic capacitor, and multilayer ceramic capacitor |
JP2018022750A (ja) * | 2016-08-02 | 2018-02-08 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
JP6823976B2 (ja) | 2016-09-06 | 2021-02-03 | 太陽誘電株式会社 | 積層セラミックコンデンサおよびその製造方法 |
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TWI814730B (zh) | 2017-07-19 | 2023-09-11 | 日商太陽誘電股份有限公司 | 積層陶瓷電容器及其製造方法 |
JP7015121B2 (ja) * | 2017-07-19 | 2022-02-02 | 太陽誘電株式会社 | 積層セラミックコンデンサおよびその製造方法 |
JP2019021816A (ja) * | 2017-07-19 | 2019-02-07 | 太陽誘電株式会社 | 積層セラミックコンデンサおよびその製造方法 |
JP2019067797A (ja) * | 2017-09-28 | 2019-04-25 | Tdk株式会社 | 薄膜キャパシタ |
JP6822549B2 (ja) | 2017-12-27 | 2021-01-27 | 東洋紡株式会社 | セラミックグリーンシート製造用離型フィルム |
JP7098340B2 (ja) | 2018-01-26 | 2022-07-11 | 太陽誘電株式会社 | 積層セラミックコンデンサおよびその製造方法 |
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Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3487539B2 (ja) * | 1997-05-06 | 2004-01-19 | 太陽誘電株式会社 | 誘電体磁器 |
EP0934595A2 (en) * | 1997-05-30 | 1999-08-11 | Phycomp Holding B.V. | Ceramic multilayer capacitor and ceramic composition for use in such capacitor |
JP3418091B2 (ja) * | 1997-05-30 | 2003-06-16 | 太陽誘電株式会社 | 誘電体磁器及びその製造方法 |
DE19737324A1 (de) * | 1997-08-28 | 1999-03-04 | Philips Patentverwaltung | Vielschichtkondensator mit silber- und seltenerdmetalldotiertem Bariumtitanat |
JP3424742B2 (ja) * | 1998-11-11 | 2003-07-07 | 株式会社村田製作所 | 正の抵抗温度特性を有する積層型半導体セラミック電子部品 |
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KR100466073B1 (ko) * | 2002-05-24 | 2005-01-13 | 삼성전기주식회사 | 균일성 및 절연저항성이 증대된 유전체 조성물, 그제조방법 및 이를 이용한 적층 세라믹 콘덴서 |
JP3947118B2 (ja) * | 2003-03-03 | 2007-07-18 | Jfeミネラル株式会社 | 表面処理金属超微粉、その製造方法、導電性金属ペースト及び積層セラミックコンデンサ |
JP4643443B2 (ja) * | 2003-04-17 | 2011-03-02 | 東邦チタニウム株式会社 | チタン酸バリウム粉末の製造方法 |
JP5194370B2 (ja) * | 2006-03-16 | 2013-05-08 | Tdk株式会社 | 電子部品、誘電体磁器組成物およびその製造方法 |
US8853116B2 (en) * | 2006-08-02 | 2014-10-07 | Eestor, Inc. | Method of preparing ceramic powders |
MY152865A (en) * | 2006-10-02 | 2014-11-28 | Shoei Chemical Ind Co | Nickel-rhenium alloy powder and conductor paste containing the same |
JP5142666B2 (ja) * | 2007-10-26 | 2013-02-13 | 京セラ株式会社 | 誘電体磁器およびコンデンサ |
JP4798231B2 (ja) * | 2009-01-30 | 2011-10-19 | 株式会社村田製作所 | 誘電体セラミックおよび積層セラミックコンデンサ |
JP2010232248A (ja) * | 2009-03-26 | 2010-10-14 | Murata Mfg Co Ltd | 積層セラミックコンデンサ |
JP2011256091A (ja) | 2010-06-11 | 2011-12-22 | Murata Mfg Co Ltd | 誘電体セラミックおよびそれを用いた積層セラミックコンデンサ |
JP2012206890A (ja) * | 2011-03-29 | 2012-10-25 | Tdk Corp | 半導体セラミックおよび積層型半導体セラミックコンデンサ |
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