JP6245753B2 - 電子素子および方法 - Google Patents
電子素子および方法 Download PDFInfo
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- JP6245753B2 JP6245753B2 JP2014063919A JP2014063919A JP6245753B2 JP 6245753 B2 JP6245753 B2 JP 6245753B2 JP 2014063919 A JP2014063919 A JP 2014063919A JP 2014063919 A JP2014063919 A JP 2014063919A JP 6245753 B2 JP6245753 B2 JP 6245753B2
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Classifications
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
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- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/27—Retrofit light sources for lighting devices with two fittings for each light source, e.g. for substitution of fluorescent tubes
- F21K9/275—Details of bases or housings, i.e. the parts between the light-generating element and the end caps; Arrangement of components within bases or housings
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- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/27—Retrofit light sources for lighting devices with two fittings for each light source, e.g. for substitution of fluorescent tubes
- F21K9/278—Arrangement or mounting of circuit elements integrated in the light source
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- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
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- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/65—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction specially adapted for changing the characteristics or the distribution of the light, e.g. by adjustment of parts
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/66—Details of globes or covers forming part of the light source
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
- F21V13/02—Combinations of only two kinds of elements
- F21V13/08—Combinations of only two kinds of elements the elements being filters or photoluminescent elements and reflectors
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
- F21V13/12—Combinations of only three kinds of elements
- F21V13/14—Combinations of only three kinds of elements the elements being filters or photoluminescent elements, reflectors and refractors
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V23/00—Arrangement of electric circuit elements in or on lighting devices
- F21V23/003—Arrangement of electric circuit elements in or on lighting devices the elements being electronics drivers or controllers for operating the light source, e.g. for a LED array
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V23/00—Arrangement of electric circuit elements in or on lighting devices
- F21V23/02—Arrangement of electric circuit elements in or on lighting devices the elements being transformers, impedances or power supply units, e.g. a transformer with a rectifier
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
- F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V3/00—Globes; Bowls; Cover glasses
- F21V3/02—Globes; Bowls; Cover glasses characterised by the shape
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V5/00—Refractors for light sources
- F21V5/10—Refractors for light sources comprising photoluminescent material
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
- F21V7/28—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by coatings
- F21V7/30—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by coatings the coatings comprising photoluminescent substances
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Description
本願は、米国仮特許出願第61/359,467号(2010年6月29日出願)、米国仮特許出願第61/363,179号(2010年7月9日出願)、米国仮特許出願第61/376,707号(2010年8月25日出願)、米国仮特許出願第61/390,128号(2010年10月5日出願)、米国仮特許出願第61/393,027号(2010年10月14日出願)、米国仮特許出願第61/433,249号(2011年1月16日出願)、米国仮特許出願第61/445,416号(2011年2月22日出願)、および米国仮特許出願第61/447,680号(2011年2月28日出願)の優先権および利益を主張し、これらの出願の開示は、その全体が本明細書に参照によって援用される。
本発明は、概して、電子素子に関し、より具体的には、アレイベースの電子素子に関する。
本願明細書は、例えば、以下の項目も提供する。
(項目1)
電子素子であって、
該電子素子は、
半導体ダイであって、該半導体ダイは、その第1の表面上に第1および第2の異なる非共平面の接点を有する、半導体ダイと、
柔軟な基板であって、該柔軟な基板は、その第1の表面上に第1および第2の伝導性配線を有し、該第1の伝導性配線と第2の伝導性配線とは、その間の間隙によって該基板上において分離されている、柔軟な基板と
を備え、
該第1および第2の接点は、該第1の接点と第2の接点との非共平面性にもかかわらず、該配線または該接点を電気的に架橋することなく、圧力活性化接着材料を用いて、それぞれ、該第1および第2の伝導性配線に接着され、それらと電気的に接触している、電子素子。
(項目2)
前記基板は、可撓性であるが、変形可能でない、項目1に記載の素子。
(項目3)
前記基板は、変形可能であるが、可撓性ではない、項目1に記載の素子。
(項目4)
前記基板は、可撓性および変形可能である、項目1に記載の素子。
(項目5)
前記半導体ダイは、発光ダイオード(LED)ダイを備える、項目1に記載の素子。
(項目6)
前記LEDダイは、無機LEDダイを備える、項目3に記載の素子。
(項目7)
前記半導体ダイは、レーザを備える、項目1に記載の素子。
(項目8)
前記半導体ダイは、半導体材料を含み、該半導体材料は、GaN、AlN、InN、またはそれらの合金あるいは混合物のうちの少なくとも1つを含む、項目1に記載の素子。
(項目9)
前記半導体ダイは、半導体材料を含み、該半導体材料は、シリコン、GaAs、InAs、AlAs、InP、GaP、AlP、InSb、GaSb、AlSb、ZnO、またはそれらの合金あるいは混合物のうちの少なくとも1つを含む、項目1に記載の素子。
(項目10)
前記接着材料は、異方性導電接着剤(ACA)を含み、該異方性導電接着剤(ACA)は、前記第1の接点を前記第1の配線にのみ、前記第2の接点を前記第2の配線にのみ電気的に接続する、項目1に記載の素子。
(項目11)
前記ACAの一部分は、前記間隙の中に配置され、前記第1の接点を前記第2の接点から実質的に隔離する、項目10に記載の素子。
(項目12)
前記接着材料は、実質的に等方性の接着剤を含み、該接着剤は、前記第1の接点を前記第1の配線にのみ、前記第2の接点を前記第2の配線にのみ電気的に接続し、前記間隙の中に配置される非伝導性接着材料をさらに含む、項目1に記載の素子。
(項目13)
前記第1の配線の厚さおよび前記第2の配線の厚さは、実質的に一様であり、相互に実質的に等しい、項目1に記載の素子。
(項目14)
反射性材料をさらに含み、該反射性材料は、前記半導体ダイの前記第1の表面の少なくとも一部分を覆っている、項目1に記載の素子。
(項目15)
前記第1の接点と第2の接点との間のオフセットは、前記半導体ダイの前記第1の表面に実質的に垂直な寸法に沿って、少なくとも0.25μmである、項目1に記載の素子。
(項目16)
前記半導体ダイは、パッケージ化されていない、項目1に記載の素子。
(項目17)
前記基板は、前記第1の配線と第2の配線との間に局所的な変形を含み、前記第1の接点と該基板との間の距離は、前記第2の接点と該基板との間の距離に実質的に等しい、項目1に記載の素子。
(項目18)
前記半導体ダイは、前記第1の配線と第2の配線との間の前記間隙を横断して延在し、該半導体ダイは、該半導体ダイに近接した第2の半導体ダイをさらに備え、該第2の半導体ダイは、該第1の配線と第2の配線との間の該間隙を横断して延在している、項目1に記載の素子。
(項目19)
前記第1および第2の伝導性配線は、伝導性インクを含む、項目1に記載の素子。
(項目20)
前記伝導性インクは、銀、金、アルミニウム、クロム、銅、または炭素のうちの少なくとも1つを含む、項目19に記載の素子。
(項目21)
前記半導体ダイによって放出される波長に対する前記基板の反射率は、80%よりも大きい、項目1に記載の素子。
(項目22)
前記半導体ダイによって放出される波長に対する前記基板の透過率は、80%よりも大きい、項目1に記載の素子。
(項目23)
前記基板は、ポリエチレンナフタレート、ポリエチレンテレフタレート、ポリカーボネート、ポリエーテルスルホン、ポリエステル、ポリイミド、ポリエチレン、または紙のうちの少なくとも1つを含む、項目1に記載の素子。
(項目24)
前記第1の配線と第2の配線との間の前記間隙は、約25μmと約1000μmとの間の範囲にある、項目1に記載の素子。
(項目25)
前記半導体ダイと熱的に連絡しているヒートシンクが存在しない、項目1に記載の素子。
(項目26)
蛍光体材料をさらに含み、該蛍光体材料は、前記半導体ダイを覆って配置され、それを少なくとも部分的に包囲し、該蛍光体材料は、該半導体ダイによって放出される光の少なくとも一部分を異なる波長の光に変換する、項目1に記載の素子。
(項目27)
第2の基板をさらに備え、該第2の基板は、前記柔軟な基板ならびに前記第1および第2の伝導性配線を覆って配置され、該第2の基板は、それによって画定された開口部を備え、前記半導体ダイおよび前記蛍光体材料は、該開口部の中に配置される、項目26に記載の素子。
(項目28)
透明フィルムをさらに備え、該透明フィルムは、前記第2の基板の前記開口部を覆って配置される、項目27に記載の素子。
(項目29)
前記第2の基板は、柔軟である、項目27に記載の素子。
(項目30)
光透過性材料をさらに含み、該光透過性材料は、前記半導体ダイと前記蛍光体材料との間に配置される、項目26に記載の素子。
(項目31)
反射面をさらに備え、該反射面は、前記蛍光体材料を覆って配置され、前記柔軟な基板に向かって変換された光を反射する、項目26に記載の素子。
(項目32)
電子素子であって、
該電子素子は、
半導体ダイであって、該半導体ダイは、その第1の表面上に第1および第2の離間接点を有する、半導体ダイと
柔軟な基板であって、該柔軟な基板は、結合領域中におけるその第1の表面上に、第1および第2の伝導性配線を有し、該第1の伝導性配線と第2の伝導性配線とは、その間に間隙を画定する、柔軟な基板と
を備え、
(i)該第1および第2の接点は、該配線または該接点を電気的に架橋することなく、圧力活性化接着材料を用いて、それぞれ、該第1および第2の伝導性配線に接着され、それらと電気的に接触しており、および(ii)少なくとも該結合領域中において、該基板の該第1の表面の上方の該第1および第2の配線の高さは、10μmを超えない、電子素子。
(項目33)
少なくとも前記結合領域中において、前記基板の前記第1の表面の上方の前記第1および第2の配線の前記高さは、5μmを超えない、項目32に記載の素子。
(項目34)
少なくとも前記結合領域中において、前記基板の前記第1の表面の上方の前記第1および第2の配線の前記高さは、1μmを超えない、項目32に記載の素子。
(項目35)
電子素子を形成する方法であって、
該方法は、
柔軟な基板を提供することであって、該柔軟な基板は、結合領域中におけるその第1の表面上に、第1および第2の伝導性配線を有し、該第1および第2の伝導性配線は、その間の間隙によって該基板上において分離されている、ことと、
該柔軟な基板または半導体ダイのうちの少なくとも1つに圧力を印加することによって、圧力活性化接着材料を用いて、半導体ダイの第1および第2の接点をそれぞれ、該第1および第2の伝導性配線に接着することであって、それにより、(i)該第1の接点と該第1の配線との間、または(ii)該第2の接点と該第2の配線との間のうちの少なくとも1つの間において電気接続を確立するが、該配線または該接点を電気的に架橋しない、ことと
を含む、方法。
(項目36)
前記基板は、可撓性であるが、変形可能ではない、項目35に記載の方法。
(項目37)
前記基板は、変形可能であるが、可撓性ではない、項目35に記載の方法。
(項目38)
前記基板は、可撓性および変形可能である、項目35に記載の方法。
(項目39)
前記基板を提供することは、その上に前記第1および第2の配線を印刷することを含む、項目35に記載の方法。
(項目40)
前記接着材料を硬化させることをさらに含む、項目35に記載の方法。
(項目41)
前記第1の接点と第2の接点とは、非共平面的である、項目35に記載の方法。
(項目42)
前記柔軟な基板または前記半導体ダイのうちの少なくとも1つに圧力を印加することは、実質的に剛性の表面と実質的に順応的な表面との間にある該基板および該半導体ダイを圧縮することを含み、該圧縮することにより、前記第1の接点と第2の接点との非共平面性にもかかわらず、該第1および第2の接点を前記第1および第2の配線に接着する、項目41に記載の方法。
(項目43)
接着する前に、前記第1および第2の接点または前記第1および第2の配線のうちの少なくとも1つの上に前記接着材料を提供することをさらに含む、項目35に記載の方法。
(項目44)
前記接着材料を提供することは、実質的に液体の形態の該接着材料を分注することを含む、項目43に記載の方法。
(項目45)
前記接着材料は、異方性導電接着剤(ACA)を含む、項目43に記載の方法。
(項目46)
前記間隙内において前記柔軟な基板を覆って非伝導性接着材料を形成することを含む、項目43に記載の方法。
(項目47)
前記半導体ダイの少なくとも一部分を覆って蛍光体材料を形成することをさらに含み、該蛍光体材料は、該半導体ダイによって放出される光の少なくとも一部分を異なる波長の光に変換する、項目35に記載の方法。
(項目48)
前記柔軟な基板の前記第1の表面上に第2の基板を配置することをさらに含み、該第2の基板は、それを通る開口部を画定し、該開口部の中に前記半導体ダイが配置される、項目35に記載の方法。
(項目49)
前記開口部を蛍光体材料によって少なくとも部分的に充填することをさらに含み、該充填することにより、該蛍光体材料が前記半導体ダイを少なくとも部分的に包囲する、項目48に記載の方法。
(項目50)
第2の基板を前記柔軟な基板の前記第1の表面上に形成することをさらに含み、該第2の基板は、くぼみを備え、該くぼみの中に前記半導体ダイが配置される、項目35に記載の方法。
(項目51)
蛍光体材料をさらに含み、該蛍光体材料は、前記くぼみの表面を覆って配置され、該蛍光体材料は、前記半導体ダイによって放出される光の少なくとも一部分を異なる波長の光に変換する、項目50に記載の方法。
(項目52)
前記蛍光体材料は、前記半導体ダイと反射面との間に配置され、該反射面は、前記柔軟な基板に向かって前記変換された光を反射する、項目51に記載の方法。
(項目53)
前記半導体ダイは、パッケージ化されていない、項目35に記載の方法。
(項目54)
前記半導体ダイは、発光ダイオード(LED)ダイを備える、項目35に記載の方法。
(項目55)
前記LEDダイは、無機LEDダイを備える、項目54に記載の方法。
(項目56)
前記半導体ダイは、レーザを備える、項目35に記載の方法。
(項目57)
前記柔軟な基板を提供すること、および前記接点を前記配線に接着することは、ロールツーロール工程において行われる、項目35に記載の方法。
(項目58)
接着材料を用いて、第2の半導体ダイの第1および第2の接点を第3および第4の伝導性配線に接着することをさらに含み、該第3および第4の伝導性配線は、前記第1の表面の反対側の前記柔軟な基板の第2の表面上に配置されている、項目35に記載の方法。
(項目59)
前記第1および第2の接点は、実質的に共平面的であり、少なくとも前記結合領域中において、前記基板の前記第1の表面の上方の前記第1および第2の配線の高さは、10μmを超えない、項目35に記載の方法。
(項目60)
電子素子であって、
該電子素子は、
複数の活性半導体層と複数の接点とを備える半導体ダイであって、該活性半導体層のうちの第1および第2の層は、非平面的な第1の表面を集合的に画定し、該非平面的な第1の面に該接点のうちの第1および第2の接点が接合される、半導体ダイと、
柔軟な基板であって、該柔軟な基板は、その第1の表面上に第1および第2の伝導性配線を有し、該第1および第2の伝導性配線は、その間の間隙によって該基板上において分離されている、柔軟な基板と
を備え、
該第1および第2の接点は、該半導体ダイの該第1の表面の非平面性にもかかわらず、該配線または該接点を電気的に架橋することなく、圧力活性化接着材料を用いて、それぞれ、該第1および第2の伝導性配線に接着され、それらと電気的に接触している、電子素子。
(項目61)
前記半導体ダイは、半導体基板を備え、該半導体基板の上に、前記複数の活性半導体層が配置されている、項目60記載の素子。
(項目62)
前記複数の活性半導体層は、発光量子井戸を備え、該発光量子井戸は、前記第1の活性半導体層と第2の活性半導体層との間に配置されている、項目60記載の素子。
Rth.hs−a=(Tjmax−Ta−Rth.j−s×I×V−Rth.s−hs×I×V)/(I×V)
ここで、Rth.hs−aは、ヒートシンクから周囲までの熱抵抗であり、Tjmaxは、最高接合点温度であり、Taは、周囲温度であり、Rth.j−sは、接合点からはんだ点までの熱抵抗であり、Iは、LED電流であり、Vは、LED電圧であり、Rth.s−hsは、はんだ点からヒートシンクまでの熱抵抗である。Taが55℃になることを可能にし、Tjmax=150℃(Xm−Lスペックシートより)であると記述し、1Aおよび6VでLEDを操作する場合、LED電力は6ワットである。次いで、必要なヒートシンクは、12℃/WのRth.hs−aを持たなければならない。したがって、接合点から周囲までの全熱抵抗は、2.5+1+12=15.5℃/Wである。比較的少量の光を放出するLEDは、比較的高い熱抵抗を有するパッケージを使用する。例えば、約20mAで動作するように設計されている部品は、一般的には、約300℃/Wの範囲内の熱抵抗を有する。
第4に、YAG:Ce蛍光体は、透過モードでは約20重量%の濃度で飽和するが、反射モードでは50重量%〜60重量%の濃度で飽和することが示されている(例えば、Yamada,K.,Y.Imai,and K.Ishi,“Optical Simulation of Light Source Devices Composed of Blue LEDs and YAG Phosphor,” Journal of Light & Visual Environment 27(2):70−74(2003)(以降では「Yamadaら」)を参照)。したがって、蛍光体層920は、より高い濃度を有し、よって、増大した変換効率を提供してもよい。Yamadaらによって実証されているように、50%の増大した変換効率が、YAG:Ce蛍光体材料で可能である。第5に、青色InGaN LEDおよびYAG:Ce蛍光体によって生成される光の色度が、透過モードと対比して反射モードでは、蛍光体濃度に伴ってかなり少ない変動を示すことも示されている(例えば、Yamadaら参照)。したがって、本発明は、蛍光体層920の厚さおよび一様性に対する緩和した製造公差を提供してもよい。
透過性材料910の形状は、名目上半球である。それがより浅い場合、蛍光体層の表面積が縮小され、それは、透過性材料910によって画定される基板400の中の円形開口部の光束発散度を低減する傾向がある。しかしながら、LEDダイ300からの光は、空洞の周辺において、蛍光体表面に対して垂直入射しない。これは、フレネル方程式によれば、蛍光体層からの鏡面反射を増加させる傾向があり、それは、円形開口部の光束発散度を増進させてもよい。透過性材料910がより深い場合、光の半分より多くが、空洞内で複数の反射を受け、それは、光束発散度を低減する傾向がある。しかしながら、これは、蛍光体層の自己励起によって相殺されてもよい。次いで、実践では、露出した蛍光体層表面の双方向反射分布関数(BRDF)、および独自の発光から蛍光体の自己励起によって提供される光学利得に応じて、透過性材料910の半球形状よりも深いまたは浅い形状が、最適であってもよい。したがって、最適な空洞形状は、楕円形、放物面、または双曲面であってもよい。それはまた、3つ以上の平面的な側面を有する錐体であってもよい。
図21、22A、および22Bを参照すると、種々の実施形態では、それに接着された1つ以上の発光半導体ダイ300をそれぞれ有する、複数の基板400が、市販の照明製品用のドロップイン代替品であるモジュール2100を形成するように、ともに組み立てられる。各基板400およびその関連半導体ダイ300は、他のモジュールから独立して組み立てられてもよい。基板400は、相関色温度、光出力、および順電圧等の電気的性質等の同様または相補的な特性を保有するように、仕分けられてもよい(または「分別され」てもよい)。
幅1mmの伝導性配線が、ガラスおよびポリエチレンテレフタレート(PET)基板上に形成され、PET基板は、約5ミルの厚さを有した。伝導性配線は、基板上に連続的に蒸発させられた、Crの底層およびAuの最上層を含んだ。Crの厚さは約30nmであり、Auの厚さは約300nmであった。伝導性配線は、LEDが取り付けられる位置に約90μmの幅を有する間隙を有した。LEDは、幅約13ミルおよび長さ約24ミルであり、ダイの同じ側面上に2つの接点を有した。間隙に隣接する各伝導性配線の端の一部分、ならびに間隙領域がACAで覆われるように、Kyocera 0604C ACAが間隙を覆って分注された。次いで、n型接点の少なくとも一部分が、間隙の片側で配線の少なくとも一部分を覆い、p型接点の少なくとも一部分が、間隙の反対側で配線の少なくとも一部分を覆うように、接点側を下にして、LEDダイがACA上に配置された。次いで、LEDが上を向く状態で、LEDを有するPETシートが、柔軟パッドの上に熱プレスで配置された。一片のガラスがLEDを覆って配置され、プレスの熱板部分が印加された。プレートは、125℃に設定された。圧力が印加され、PETシートがプレスの中で10分間放置され、次いで、プレスから除去され、表面上のガラスを除去する前に冷却させられた。熱プレス動作後に、シートには、LEDがある場所でくぼみができ、工程中のPETシートの変形を示した。PET基板に取り付けられたLEDダイには、短絡または開路を伴わずに、伝導に対して100%収率があった。同様の工程を介してスライドガラスに取り付けられたLEDダイは、中間接点故障の大部分(約50%以上)を示した。
幅1mmの伝導性配線が、約5ミルの厚さを有するPET基板上に形成された。伝導性配線は、銀インクのスクリーン印刷によって基板上に形成された。銀スクリーン印刷配線の高さは約4μmであった。伝導性配線は、LEDが取り付けられる位置に約90μmから150μmの幅を有する間隙を有した。LEDは、幅約13ミルおよび長さ約24ミルであり、ダイの同じ側面上に両方の接点を有した。間隙に隣接する各伝導性配線の端の一部分、ならびに間隙領域がACAで覆われるように、Kyocera 0604C ACAが間隙を覆って分注された。次いで、n型接点の少なくとも一部分が、間隙の片側で配線の少なくとも一部分を覆い、p型接点の少なくとも一部分が、間隙の反対側で配線の少なくとも一部分を覆うように、接点側を下にして、LEDダイがACA上に配置された。次いで、LEDが上を向く状態で、LEDを有するPETシートが、柔軟パッドの上に熱プレスで配置された。一片のガラスがLEDを覆って配置され、プレスの熱板部分が印加された。プレートは、125℃に設定された。圧力が印加され、PETシートがプレスの中で10分間放置され、次いで、プレスから除去され、表面からガラスを除去する前に冷却させられた。実施例1で記述されるように、熱プレス動作後に、シートには、LEDが取り付けられた場所でくぼみができ、工程中のPETシートの変形を示した。PET基板に取り付けられたLEDダイには、7000以上のダイの交換用の0.2%故障LEDに対する短絡のみを伴って、伝導に対して99.8%以上の収率があった。
素子は、上記で説明されるような柔軟な基板に接着された、青色光を放出するLEDを特色とし、素子から発せられた光が、固有の公称相関色温度(CCT)および少なくとも75の演色評価数(CRI)を伴って実質的に白色であるように、蛍光体混合物が、LEDを包囲する井戸の中に配置された。蛍光体混合物は、6重量%〜12重量%の黄色発光Al5O12Y3:Ce2+蛍光体(NYAG4563−S)、(第1の蛍光体に対して)10重量%から50重量%の琥珀色発光(SrBaMg)2SiO4:Eu2+蛍光体(O6040)、(第1の蛍光体に対して)3重量%から30重量%の赤色発光CaAlSiN3:Eu2+蛍光体(R6535)、および(第1の蛍光体に対して)1重量%から5重量%の緑色発光(SrBaMg)2SiO4:Eu2+蛍光体(Y3957)を含み、その全ては、Intematix Corporation(Fremont, CA)から入手可能である。
Claims (78)
- 電子素子であって、
前記電子素子は、
第1および第2の離間された接点を有する無機発光ダイオード(LED)と、
基板であって、前記基板は、(i)力に応じて柔軟で、および弾性的であるか、または(ii)力に応じて永久に変形可能であるかのうちの少なくとも一方であり、前記基板は、前記基板の第1の表面上に第1および第2の伝導性配線を有し、前記第1の伝導性配線と前記第2の伝導性配線とは、その間の間隙により前記基板上で離間される、基板と
を備え、
前記無機LEDに電気的に接続された制御回路が前記基板上に配置されており、
前記第1および第2の接点は、前記配線または前記接点を電気的に架橋することなく、圧力活性化接着材料を用いて、それぞれ、前記第1および第2の伝導性配線に接着され、それらと電気的に接触しており、
前記接点と配線との間にはスタッド段差は提供されておらず、前記基板は、前記無機LEDの動作の間に前記接点と配線との間の電気的接触を維持するための局所的な屈曲または局所的な変形を含む、電子素子。 - 前記基板は、前記第1の配線と前記第2の配線との間に局所的な変形を含み、それにより、前記第1の接点と前記基板との間の距離は、前記第2の接点と前記基板との間の距離に実質的に等しい、請求項1に記載の素子。
- 前記基板は、(i)力に応じて柔軟で、および弾性的であるが、(ii)力に応じて永久に変形可能ではない、請求項1に記載の素子。
- 前記基板は、(i)力に応じて永久に変形可能であるが、(ii)力に応じて柔軟ではなく、および弾性的ではない、請求項1に記載の素子。
- 前記基板は、(i)力に応じて柔軟で、および弾性的であり、かつ(ii)力に応じて永久に変形可能である、請求項1に記載の素子。
- 前記接着材料は、異方性導電接着剤(ACA)を含み、前記異方性導電接着剤(ACA)は、前記第1の接点を前記第1の配線にのみ、前記第2の接点を前記第2の配線にのみ電気的に接続する、請求項1に記載の素子。
- 前記ACAの一部分は、前記間隙の中に配置され、前記第1の接点を前記第2の接点から実質的に隔離する、請求項6に記載の素子。
- 前記無機LEDは、半導体材料を含み、前記半導体材料は、GaN、AlN、InN、またはそれらの合金あるいは混合物のうちの少なくとも1つを含む、請求項1に記載の素子。
- 前記無機LEDは、蛍光体材料を含み、前記蛍光体材料は、前記無機LEDによって放出された光の一部分を吸収し、異なる波長の光を放出する、請求項1に記載の素子。
- 前記無機LEDによって放出された光と、波長変換材料によって放出された光とが混合して、実質的に白色の光を形成する、請求項9に記載の素子。
- 前記無機LEDは、2000K〜7000Kの範囲内の色温度を有する白色光を放出する、請求項1に記載の素子。
- 前記無機LEDは、パッケージ化されたLEDである、請求項1に記載の素子。
- 前記無機LEDは、裸LEDダイである、請求項1に記載の素子。
- 前記第1および第2の伝導性配線は、伝導性インクを含む、請求項1に記載の素子。
- 前記第1および第2の伝導性配線は、銀、金、アルミニウム、クロム、銅、または炭素のうちの少なくとも1つを含む、請求項1に記載の素子。
- 前記基板は、ポリエチレンナフタレート、ポリエチレンテレフタレート、ポリカーボネート、ポリエーテルスルホン、ポリエステル、ポリイミド、ポリエチレン、または紙のうちの少なくとも1つを含む、請求項1に記載の素子。
- 前記第1の配線と前記第2の配線との間の前記間隙は、25μmと1000μmとの間の範囲にある、請求項1に記載の素子。
- 前記無機LEDと熱的に連絡しているヒートシンクが存在しない、請求項1に記載の素子。
- 前記接着材料は、実質的に等方性の接着剤を含み、前記実質的に等方性の接着剤は、前記第1の接点を前記第1の配線にのみ、前記第2の接点を前記第2の配線にのみ電気的に接続し、前記間隙の中に配置された非伝導性接着材料をさらに含む、請求項1に記載の素子。
- 前記無機LEDによって放出された波長に対する前記基板の反射率は、80%よりも大きい、請求項1に記載の素子。
- 前記無機LEDによって放出された波長に対する前記基板の透過率は、80%よりも大きい、請求項1に記載の素子。
- 反射面をさらに備え、前記反射面は、前記無機LEDを覆って配置され、前記基板に向かって光を反射する、請求項1に記載の素子。
- 前記無機LEDの接合点温度は、動作中に100℃を超えない、請求項1に記載の素子。
- (i)前記無機LEDは、p−n接合点を備え、(ii)前記基板を介した前記p−n接合点から周囲への熱抵抗は、少なくとも500℃/Wである、請求項1に記載の素子。
- 複数の付加的な無機LEDをさらに備え、前記複数の付加的な無機LEDの各々は、第1および第2の離間された接点を有し、前記無機LEDおよび前記付加的な無機LEDは、前記基板上でアレイに配設されており、
動作の間の2次元アレイによって生成される熱密度は、0.01W/cm2未満である、請求項1に記載の素子。 - 前記2次元アレイにおける前記無機LEDのピッチは、3mmから30mmの範囲内である、請求項25に記載の素子。
- 前記無機LEDに電気的に接続された電力供給部をさらに備える、請求項1に記載の素子。
- 前記無機LEDによって放出された光を透過するように配設されている光学要素をさらに備える、請求項1に記載の素子。
- 前記第1の表面の反対側の前記基板の第2の表面上の第3および第4の伝導性配線であって、前記第3の伝導性配線と前記第4の伝導性配線とは、その間の間隙により前記基板上で離間される、第3および第4の伝導性配線と、
第3および第4の離間された接点を有する第2の無機LEDと
をさらに備え、
前記第3および第4の接点は、前記第3および第4の配線または前記第3および第4の接点を電気的に架橋することなく、圧力活性化接着材料を用いて、それぞれ、前記第3および第4の伝導性配線に接着され、それらと電気的に接触している、請求項1に記載の素子。 - 前記制御回路は、前記基板の前記第1の表面上に配置されている、請求項1に記載の素子。
- 前記制御回路は、前記無機LEDの調光を制御するように構成されている、請求項1に記載の素子。
- 前記基板が取り付けられている剛性のフレームをさらに備える、請求項1に記載の素子。
- 前記基板上に配置された複数の付加的な無機LEDと、
筐体と
をさらに備え、(i)前記筐体内に前記基板が少なくとも部分的に配置され、(ii)前記筐体内に前記制御回路が配置され、(iii)前記筐体は、前記無機LEDおよび前記複数の付加的な無機LEDから放出された光を透過するように構成されている、請求項1に記載の素子。 - 光学要素のアレイをさらに備え、各光学要素は、(i)前記無機LEDおよび複数の付加的な無機LEDと関連付けられており、(ii)前記無機LEDおよび複数の付加的な無機LEDによって放出された光を透過するように配設されている、請求項33に記載の素子。
- 拡散器をさらに備え、前記拡散器は、前記無機LEDおよび複数の付加的な無機LEDによって放出された光を透過するように配設されている、請求項33に記載の素子。
- 第2の基板と、前記第2の基板上に配置され、前記無機LEDとは異なる種類の第2のLEDとをさらに備える、請求項1に記載の素子。
- (i)前記無機LEDを覆って配置された第1の蛍光体と、(ii)第2の基板と、(iii)前記第2の基板上に配置された第2のLEDと、(iv)前記第2のLEDを覆って配置された第2の蛍光体とをさらに備え、前記第1の蛍光体と前記第2の蛍光体とは異なる種類である、請求項36に記載の素子。
- 前記制御回路への感知された環境要因の通信のためのセンサをさらに備える、請求項1に記載の素子。
- 前記センサは、光センサであり、前記制御回路は、前記センサによって感知された光強度が閾値である点まで前記無機LEDを薄暗くするように構成されている、請求項38に記載の素子。
- 前記センサは、占有センサであり、前記制御回路は、前記センサからのフィードバックに基づいて前記無機LEDの光出力を制御する、請求項38に記載の素子。
- 前記制御回路は、第2の基板上に配置された制御回路と通信するように構成されている、請求項1に記載の素子。
- 前記基板および前記無機LEDは、液晶ディスプレイアセンブリ用のバックライトユニットの一部分である、請求項1に記載の素子。
- 前記基板の前記第1の表面上の第3および第4の伝導性配線であって、前記第3の伝導性配線と前記第4の伝導性配線とは、その間の間隙により前記基板上で離間される、第3および第4の伝導性配線をさらに備え、
第1および第2の接点を有する電子構成要素をさらに備え、
前記電子構成要素の前記第1および第2の接点は、前記配線または前記接点を電気的に架橋することなく、圧力活性化接着材料を用いて、それぞれ、前記第3および第4の伝導性配線に接着され、それらと電気的に接触しており、
前記基板は、前記電子構成要素の動作の間に前記接点と配線との間の電気的接触を維持するための局所的な屈曲または局所的な変形を含む、請求項1に記載の素子。 - 前記電子構成要素は、光センサ、占有センサ、レジスタ、インダクタ、コンデンサ、トランジスタ、アンテナ、バッテリまたは集積回路のうちの少なくとも1つを含む、請求項43に記載の素子。
- 前記電子構成要素は、前記無機LEDと直列に電気的に接続されている、請求項43に記載の素子。
- 前記電子構成要素は、LEDである、請求項43に記載の素子。
- 電子素子であって、
前記電子素子は、
第1および第2の離間された接点を有する無機発光ダイオード(LED)と、
柔軟な基板であって、前記柔軟な基板は、結合領域中において、前記柔軟な基板の第1の表面上に第1および第2の伝導性配線を有し、前記第1の伝導性配線と前記第2の伝導性配線とは、その間の間隙によって前記基板上において分離されている、柔軟な基板と
を備え、
前記無機LEDに電気的に接続された制御回路が前記基板上に配置されており、
(i)前記第1および第2の伝導性配線は本質的にアルミニウムまたは銅から構成され、(ii)前記第1および第2の接点は、前記配線または前記接点を電気的に架橋することなく、異方性導電接着剤(ACA)を介して、それぞれ、前記第1および第2の伝導性配線に接着され、それらと電気的に接触しており、
前記接点と配線との間にはスタッド段差は提供されておらず、前記基板は、前記無機LEDの動作の間に前記接点と配線との間の電気的接触を維持するための局所的な屈曲または局所的な変形を含み、(iii)前記基板は、本質的にポリエチレンテレフタレートから構成され、(iv)前記ACAの一部分は、前記間隙の中に配置され、前記第1の接点を前記第2の接点から実質的に隔離する、電子素子。 - 前記無機LEDは、前記第1の配線と第2の配線との間の前記間隙を横断して延在し、前記無機LEDに近接した第2の無機LEDをさらに備え、前記第2の無機LEDは、前記第1の配線と第2の配線との間の前記間隙を横断して延在している、請求項47に記載の素子。
- 前記無機LEDによって放出された光の波長に対する前記基板の反射率は、80%よりも大きい、請求項47に記載の素子。
- 前記無機LEDは、2000K〜7000Kの範囲内の色温度を有する白色光を放出する、請求項47に記載の素子。
- 前記無機LEDは、パッケージ化されたLEDである、請求項47に記載の素子。
- 前記無機LEDは、裸LEDダイである、請求項47に記載の素子。
- 前記無機LEDに電気的に接続された電力供給部をさらに備える、請求項47に記載の素子。
- 前記無機LEDによって放出された光を透過するように配設されている光学要素をさらに備える、請求項47に記載の素子。
- 前記光学要素は、前記無機LEDの上側に配置され、前記無機LEDに光学的に連結されている、請求項54に記載の素子。
- 前記光学要素は、前記基板と前記光学要素との間で前記無機LEDを囲むように前記基板または前記配線のうちの少なくとも1つと接触して配置されている、請求項55に記載の素子。
- 複数の付加的な無機LEDであって、前記複数の付加的な無機LEDの各々は、第1および第2の離間された接点を有し、前記無機LEDおよび前記付加的な無機LEDは、前記基板上で2次元アレイに配設されている、複数の付加的な無機LEDと、
複数の付加的な光学要素であって、前記複数の付加的な光学要素の各々は、前記複数の付加的な無機LEDのうちの1つを覆って配置され、前記複数の付加的な無機LEDのうちの1つに光学的に連結されている、複数の付加的な光学要素と
をさらに備え、(i)前記光学要素は、前記無機LEDにのみ光学的に連結され、(ii)各付加的な光学要素は、前記付加的な無機LEDのうちの異なる1つにのみ光学的に連結されている、請求項55に記載の素子。 - 電子素子を形成する方法であって、
前記方法は、
柔軟な基板を提供することであって、前記柔軟な基板は、結合領域中において、前記柔軟な基板の第1の表面上に第1および第2の伝導性配線を有し、前記第1の伝導性配線と前記第2の伝導性配線とは、その間の間隙によって前記基板上において分離されている、ことと、
第1および第2の接点を有する無機発光ダイオード(LED)を提供することと、
前記無機LEDの前記第1および第2の接点と前記第1および第2の伝導性配線との間に圧力活性化接着材料を提供することであって、前記接点と配線との間にはスタッド段差は提供されない、ことと、
前記柔軟な基板または前記無機LEDのうちの少なくとも1つに圧力を印加することであって、それにより、(i)前記第1の接点と前記第1の配線との間、または(ii)前記第2の接点と前記第2の配線との間のうちの少なくとも1つの間において電気接続を確立するが、前記配線または前記接点を電気的に架橋せず、前記無線LEDが前記第1の配線と第2の配線との間の前記間隙を横断して延在するようにする、ことと
を含み、
前記電気接続が確立された後に、前記基板は、前記無機LEDの動作の間に前記接点と配線との間の電気的接触を維持するための局所的な屈曲または局所的な変形を含む、方法。 - 前記圧力活性化接着材料を提供することは、(i)前記第1および第2の伝導性配線の少なくとも一部分を覆って、(ii)前記第1の伝導性配線と前記第2の伝導性配線との間の前記間隙内で、実質的に液体の形態で前記圧力活性化接着材料を分注することを含む、請求項58に記載の方法。
- 前記柔軟な基板または前記無機LEDのうちの少なくとも1つに圧力を印加している間に前記結合領域に熱を印加することをさらに含む、請求項58に記載の方法。
- 前記熱を印加することは、80℃〜150℃の範囲内の温度へと前記圧力活性化接着材料を加熱することを含む、請求項60に記載の方法。
- 前記熱を印加することは、10分未満にわたり前記圧力活性化接着材料を加熱することを含む、請求項60に記載の方法。
- 前記接着材料は、異方性導電接着剤(ACA)を含み、前記異方性導電接着剤(ACA)は、前記第1の接点を前記第1の配線にのみ、前記第2の接点を前記第2の配線にのみ電気的に接続する、請求項58に記載の方法。
- 前記ACAの一部分は、前記間隙の中に配置され、前記第1の接点を前記第2の接点から実質的に隔離する、請求項63に記載の方法。
- 前記接着材料は、実質的に等方性の接着剤を含み、前記実質的に等方性の接着剤は、前記第1の接点を前記第1の配線にのみ、前記第2の接点を前記第2の配線にのみ電気的に接続し、前記間隙の中に配置された非伝導性接着材料をさらに含む、請求項58に記載の方法。
- 前記第1の配線と第2の配線との間の前記間隙を横断して延在し、前記無機LEDに近接した第2の無機LEDをさらに備える、請求項58に記載の方法。
- 前記基板は、ポリエチレンナフタレート、ポリエチレンテレフタレート、ポリカーボネート、ポリエーテルスルホン、ポリエステル、ポリイミド、ポリエチレン、または紙のうちの少なくとも1つを含む、請求項58に記載の方法。
- 前記無機LEDによって放出された波長に対する前記基板の反射率は、80%よりも大きい、請求項58に記載の方法。
- 前記無機LEDは、2000K〜7000Kの範囲内の色温度を有する白色光を放出する、請求項58に記載の方法。
- 前記無機LEDは、パッケージ化されたLEDである、請求項58に記載の方法。
- 前記無機LEDは、裸LEDダイである、請求項58に記載の方法。
- 前記無機LEDに電力供給部を電気的に接続することをさらに含む、請求項58に記載の方法。
- 前記無機LEDによって放出された光を透過するように光学要素を配設することをさらに含む、請求項58に記載の方法。
- 前記基板は、前記基板の前記第1の表面上の第3および第4の伝導性配線を備え、前記第3の伝導性配線と前記第4の伝導性配線とは、その間の間隙により前記基板上で離間され、
第1および第2の接点を有する電子構成要素を提供することと、
前記電子構成要素の前記第1および第2の接点と、前記第3および第4の伝導性配線との間に圧力活性化接着材料を提供することと、
前記柔軟な基板または前記電子構成要素のうちの少なくとも1つに圧力を印加することであって、それにより、(i)前記電子構成要素の前記第1の接点と前記第3の配線との間、または(ii)前記電子構成要素の前記第2の接点と前記第4の配線との間のうちの少なくとも1つの間において電気接続を確立するが、前記第3および第4の配線または前記電子構成要素の前記接点を電気的に架橋せず、前記電子構成要素が前記第3の配線と第4の配線との間の前記間隙を横断して延在するようにする、ことと
をさらに含む、請求項58に記載の方法。 - 前記電子構成要素は、レジスタ、インダクタ、コンデンサ、トランジスタ、バッテリまたは集積回路のうちの少なくとも1つを含む、請求項74に記載の方法。
- 前記電子構成要素は、光を放出せず、前記無機LEDと直列に電気的に接続されている、請求項74に記載の方法。
- (i)前記柔軟な基板は、ロールの形態で提供され、(ii)前記圧力活性化接着材料を提供すること、および、圧力を印加することは、ロールツーロール工程において実行される、請求項58に記載の方法。
- 前記伝導性配線は、銀、金、アルミニウム、クロム、銅、銀インクまたは炭素のうちの少なくとも1つを含む、請求項58に記載の方法。
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US9054290B2 (en) | 2015-06-09 |
US9426860B2 (en) | 2016-08-23 |
JP2014160835A (ja) | 2014-09-04 |
US20140191257A1 (en) | 2014-07-10 |
JP5512888B2 (ja) | 2014-06-04 |
US8466488B2 (en) | 2013-06-18 |
US8384121B2 (en) | 2013-02-26 |
WO2012000114A1 (en) | 2012-01-05 |
US8907370B2 (en) | 2014-12-09 |
US8680567B2 (en) | 2014-03-25 |
US8552463B2 (en) | 2013-10-08 |
JP2013531378A (ja) | 2013-08-01 |
KR101372084B1 (ko) | 2014-03-07 |
EP2589082A4 (en) | 2015-02-25 |
US20150001465A1 (en) | 2015-01-01 |
CN102959708B (zh) | 2016-05-04 |
US20120217496A1 (en) | 2012-08-30 |
KR20130087518A (ko) | 2013-08-06 |
US20140034960A1 (en) | 2014-02-06 |
US20130181238A1 (en) | 2013-07-18 |
WO2012000114A8 (en) | 2012-12-20 |
US20150236214A1 (en) | 2015-08-20 |
US20160327220A1 (en) | 2016-11-10 |
US9252373B2 (en) | 2016-02-02 |
EP2589082B1 (en) | 2018-08-08 |
US20160113087A1 (en) | 2016-04-21 |
US20110315956A1 (en) | 2011-12-29 |
EP2589082A1 (en) | 2013-05-08 |
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