CN110056786A - 可挠式超薄发光体结构及其制作方法 - Google Patents

可挠式超薄发光体结构及其制作方法 Download PDF

Info

Publication number
CN110056786A
CN110056786A CN201810052258.4A CN201810052258A CN110056786A CN 110056786 A CN110056786 A CN 110056786A CN 201810052258 A CN201810052258 A CN 201810052258A CN 110056786 A CN110056786 A CN 110056786A
Authority
CN
China
Prior art keywords
layer
body structure
emitting body
dielectric layer
thin light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810052258.4A
Other languages
English (en)
Inventor
洪梓健
连亚琦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
Original Assignee
Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rongchuang Energy Technology Co ltd, Zhanjing Technology Shenzhen Co Ltd filed Critical Rongchuang Energy Technology Co ltd
Priority to CN201810052258.4A priority Critical patent/CN110056786A/zh
Priority to US15/920,596 priority patent/US10297638B1/en
Publication of CN110056786A publication Critical patent/CN110056786A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00—Fastening of light sources or lamp holders
    • F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V23/00—Arrangement of electric circuit elements in or on lighting devices
    • F21V23/003—Arrangement of electric circuit elements in or on lighting devices the elements being electronics drivers or controllers for operating the light source, e.g. for a LED array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明涉及一种可挠式超薄发光体结构，其包括：柔性介电层、形成在所述柔性介电层表面的导电线路层、形成在所述导电线路层上的发光芯片及覆盖所述发光芯片的封装层，所述封装层覆盖所述发光芯片及填充发光芯片之间的间隙。本发明还涉及一种可挠式超薄发光体结构的制作方法。由此方法制作形成的可挠式超薄发光体结构，能满足薄型化、可挠曲的需求，可以用于指示灯箱、照明光板、背光模块、广告灯板等装置中。

Description

可挠式超薄发光体结构及其制作方法
技术领域
本发明涉及显示技术领域，尤其涉及一种能用于背光模组的可挠式超薄发光体结构。
背景技术
随着光电科技的进步，发光二极管光源的应用也随之愈加广泛，诸如指示灯箱、照明光板、背光模块、广告灯板等应用。无论是何种应用，皆对各类照明、显示产品造成革命性的变化，颠覆目前所认知的刻板印象。大多数的产品应用均将发光二极管光源朝向超薄化面光源技术发展。
就目前相关技术而言，无论是侧投式的光源模块或直下式的光源模块皆存在有部分缺失，例如不具可挠性等。因此，提供一个可挠式光源模块实有其必要性。
发明内容
有鉴于此，有必要提供一种能够解决上述技术问题的可挠式超薄发光体结构。
一种可挠式超薄发光体结构，其包括：柔性介电层、形成在所述柔性介电层表面的导电线路层、形成在所述导电线路层上的发光芯片及覆盖所述发光芯片的封装层，所述封装层覆盖所述发光芯片及填充发光芯片之间的间隙。
一个优选实施方式中，所述封装层的厚度介于1微米至500微米，所述封装层的热膨胀系数与所述介电层的热膨胀系数一致。
一个优选实施方式中，所述柔性介电层为透明的高分子薄膜，所述柔性介电层的厚度介于5微米至50微米。
本发明是涉及一种可挠式超薄发光体结构的制作方法。
一种可挠式超薄发光体结构的制作方法，其包括步骤：
提供支撑基板，在所述支撑基板的表面形成一层柔性介电层；
在所述柔性介电层的表面形成导电线路层；
在所述导电线路层的表面设置多个发光芯片；
在所述发光芯片的表面形成一层的封装层，所述封装层覆盖所述发光芯片及填充发光芯片之间的间隙；以及
将所述柔性介电层底面的所述支撑基板移除，以得到可挠式超薄发光体结构。
一个优选实施方式中，在形成所述导电线路层之后还包括利用低温多晶硅技术在所述导电线路层的表面形成电路元件的步骤。
一个优选实施方式中，所述导电线路层是通过溅镀、气相沉积或者电镀的方式形成在所述柔性介电层上，所述导电线路层的厚度为5至50微米。
一个优选实施方式中，该支撑基板是通过弯折分离、蚀刻、激光切割或研磨的方式而移除。
一个优选实施方式中，所述柔性介电层为透明的高分子薄膜，所述柔性介电层的厚度介于5微米至50微米。
一个优选实施方式中，所述封装层的热膨胀系数与所述介电层的热膨胀系数一致，且所述封装层的厚度介于1微米至500微米。
一个优选实施方式中，该封装层为聚对苯二甲酸乙二醇酯、环氧树脂、硅氧烷其中之一。
与现有技术相比，本发明提供的可挠式超薄发光体结构的制作方法及由此制作形成的可挠式超薄发光体结构，能满足薄型化、可挠曲的需求，且能实现双面出光，可以用于指示灯箱、照明光板、背光模块、广告灯板等装置中。
附图说明
图1是本发明提供的可挠式超薄发光体结构的制作流程图。
图2是提供支撑基板及在支撑基板上形成柔性介电层的剖面图。
图3是在图2所示的基础上形成导电线路层的剖面图。
图4是在图3的基础上形成发光芯片的剖面图。
图5是在图4的基础上压合一层封装层的剖面图。
图6是在图5的基础上移除支撑基板的剖面图。
图7是最后得到的可挠式超薄发光体结构的剖面图。
主要元件符号说明
可挠式超薄发光体结构 100
支撑基板 10
柔性介电层 20
导电线路层 30
电路元件 32
发光芯片 40
封装层 50
激光光源 60
上表面 12
下表面 14
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
下面结合将结合附图及实施例，对本发明提供的可挠式超薄发光体结构100制作方法及由此得到的可挠式超薄发光体结构100作进一步的详细说明。
请参阅图1至图7，本发明提供一种可挠式超薄发光体结构100的制作方法，其包括如下步骤：
第一步：请参阅图2，提供支撑基板10，所述支撑基板10包括相背的上表面12及下表面14，在所述支撑基板10的上表面12形成一层高分子柔性介电层20。
支撑基板10作为后续步骤中所形成结构的机械性支撑，其可为一透明或不透明基板，例如一玻璃基板或者一陶瓷基板。由于支撑基板10不构成最终形成的可挠式超薄发光体结构100产品的一部分，所以支撑基板10可采用成本相对较低的材料，只要其可提供必要的机械性支撑即可。例如，支撑基板10可采用素玻璃而非化学强化玻璃，以降低可挠式超薄发光体结构100的制作成本。
另外，支撑基板10在后续自可挠式超薄发光体结构100上移除后，还可以再重复回收利用，如此，可进一步降低制作成本。值得注意的是，支撑基板10并不限于玻璃，其可以是其他任何可提供机械支撑的合适材料。
在所述支撑基板10的上表面12形成柔性介电层20的方法包括涂布、印刷或者模压的方式。涂布的方式可以包括刮刀涂覆(Doctor Blade)、旋转涂布(Spin Coating)。涂布之后再高温烘烤，使涂布的膜层固化，从而在所述支撑基板10的表面上形成一层耐高温的柔性介电层20，所述柔性介电层的厚度为5至50微米。
此厚度范围的柔性介电层20具有良好的机械性能，包括延展性、韧性及热稳定性，同时柔性介电层20还具有良好的光学特性，例如高穿透率，以用于制作双面透光的可挠式超薄发光体结构100。
所述柔性介电层20可以是能耐高温的聚酰亚胺(Polyimide)、聚对苯二甲酸乙二醇酯(PET)、聚碳酸酯(PC)、聚醚砜(PES)、聚甲基丙烯酸甲酯(PMMA)。此处的高温是指400度左右的温度。
优选地，是选择与支撑基板10的热膨胀系数较为接近的聚酰亚胺来形成所述柔性介电层20，可以防止柔性介电层20在固化时翘曲、在后续固定发光芯片40的回流焊时翘曲。聚酰亚胺的热膨胀系数介于：2×10-5－3×10-5/℃的范围。
例如，以聚酰亚胺来制作柔性介电层20为例说明，将支撑基板10放置于可移动的平台上，通过一涂布刀头或一涂布机将一定配比的溶液涂布于支撑基板上，再加热烘烤，使部分溶剂挥发和/或使溶液中的部分成分(例如聚合单体或前驱体)产生聚合，从而形成聚酰亚胺薄膜。
也即，由于所述柔性介电层20是通过涂覆、涂布，印刷或者模压的方式形成，从而能控制所述柔性介电层20的厚度，以使后续形成的可挠式超薄发光体结构100满足薄型化的需求。由于柔性介电层20的厚度较薄，从而，发光芯片产生的热量能迅速通过所述柔性介电层散发至外界，不会产生热量的积聚。
第二步，请参阅图3，在所述柔性介电层20的表面形成导电线路层30，所述导电线路层30的层数可以为一层，也可以为多层。
导电线路层30可以通过溅镀(Spattering)、气相沉积或者电镀的方式形成在所述柔性介电层20上，每层所述导电线路层30的厚度为5至50微米。
导电线路层30的材料可以是银、镍、铜、锡、铝或前述金属材料的合金，或者是铟锡氧化物(ITO)、铟锌氧化物(IZO)、铟镓氧化物(IGO)及铟钨氧化物(IWO)等透明导电材料。
依次重复在导电线路层30的表面形成柔性介电层20，及在柔性介电层20表面形成导电线路层30的步骤，即可得到多层导电线路层。
请参阅图4，在形成所述导电线路层30后还包括在柔性介电层的表面形成电路元件32。具体地，可以采用低温多晶硅(Low Temperature Poly-silicon，LTPS)技术形成所述电路元件32。电路元件32包括用于控制发光芯片发光的控制元件和/或驱动用的开关元件。通过低温多晶硅技术形成的电路元件32实际上是低温多晶硅薄膜晶体管，厚度也是可以控制的，比直接在导电线路层30上设置的电路元件的尺寸会进一步缩小，如此，会降低可挠式超薄发光体结构100的厚度。
如果可挠式超薄发光体结构100仅仅用作简单的照明产品，可以采用开关元件通过稳流、调整电流，以实现出光亮度的调整；如果可挠式超薄发光体结构100需要实现某些控制功能，如控制电流的时域模式或频率模式对驱动电路进行控制，指示驱动电路调整或改变LED中的电流，可以采用逻辑控制电路元件或智能控制元件以实现相应的功能。
第三步，请参阅图4，在所述导电线路层30的表面设置多个发光芯片40，发光芯片40优选地为无机半导体发光芯片，每个发光芯片40的面积为2.5×104平方微米。所述发光芯片40与所述导电线路层30电性连接。发光芯片和导电线路层30的电连接方式包括但不限于引线键合也可以使用倒装焊、回流焊(Solder Reflow)等技术。这种回流焊接工艺在220℃-320℃的作业条件下进行，为防止在回流焊时柔性介电层20从所述支撑基板10上翘曲，所以，在最初选择柔性介电层20的材料时要选择与支撑基板10的热膨胀系数更接近的材料来形成所述柔性介电层20。
第四步，请参阅图5，在所述发光芯片40的表面形成一层的封装层50，所述封装层50覆盖所述电路元件32、发光芯片40及填充电路元件32及发光芯片40之间的间隙。所述封装层50的厚度介于1至500微米，此厚度范围的封装层50能满足最终形成的发光体结构的薄型化需求。封装层50可以选用LED封装领域常用的硅树脂(silicone；又称硅氧烷)、环氧树脂(epoxy)和塑料。封装层50能保证发光芯片40所发出的光线能够发射出去且有效隔绝外界湿气并保护发光芯片40。优选地是，所述封装层50的热膨胀系数与所述柔性介电层20的热膨胀系数相当。在本实施方式中，所述封装层50为聚对苯二甲酸乙二醇酯(PET)，如此，能保证形成的发光体结构具可挠曲特征的同时不会发生翘曲。
封装层50可以通过转移成型(transfer-molding)或是注入成型(inject-molding)等方式形成。
第五步，请参阅图6，将所述柔性介电层20底面的支撑基板10移除。当该封装层50硬化后，可以通过弯折分离、蚀刻、激光切割或研磨将支撑基板10移除。
在本实施方式中，可以利用激光光源60发出的光束扫描所述支撑基板10的下表面14，以移除所述支撑基板10，请参阅图7，从而得到所述可挠式超薄发光体结构100。
由于所述柔性介电层20是通过在所述支撑基板10的表面涂布高分子材料形成，所述导电线路层30是通过溅镀、气相沉积或者电镀的方式形成，所以，从而可以控制柔性介电层20的厚度及控制导电线路层30的厚度，进而达到控制所述可挠式超薄发光体结构100的厚度。
由于所述柔性介电层20与所述封装层50均能透射光线，从而，形成的所述可挠式超薄发光体结构100为双面发光结构。
所述可挠式超薄发光体结构100的整体厚度介于7至600微米之间，所以，所述可挠式超薄发光体结构100能满足薄型化、可挠曲的需求，可以用于指示灯箱、照明光板、背光模块、广告灯板等装置中。
请再次参阅图7，由上述制作方法制作形成的可挠式超薄发光体结构100包括：柔性介电层20，形成在所述柔性介电层20表面的导电线路层30，形成在导电线路层30表面的电路元件32、发光芯片40，以及形成在发光芯片40表面的封装层50。电路元件32及所述发光芯片40均与所述导电线路层30电性连接。
所述柔性介电层20的厚度为5至50微米。所述柔性介电层20可以是能耐高温的聚酰亚胺(Polyimide)、聚对苯二甲酸乙二醇酯(PET)、聚碳酸酯(PC)、聚醚砜(PES)、聚甲基丙烯酸甲酯(PMMA)。此处的高温是指400度左右的温度。由于柔性介电层20是无色透明的，从而，可挠式超薄发光体结构100可以实现双面出光。
所述导电线路层30的厚度为5至50微米。
所述电路元件32用于控制发光芯片40的发光，在本实施方式中，实施电路元件32为低温多晶硅薄膜晶体管。
所述封装层50覆盖所述电路元件32、发光芯片40及填充电路元件32及发光芯片40之间的间隙。所述封装层50的厚度介于1至500微米。封装层50可以选用LED封装领域常用的硅树脂(silicone；又称硅氧烷)、环氧树脂(epoxy)和塑料。所述封装层50的热膨胀系数与所述柔性介电层20的热膨胀系数相当。以防止所述可挠式超薄发光体结构100翘曲。
所述可挠式超薄发光体结构100的整体厚度介于7至600微米之间，所以，所述可挠式超薄发光体结构100能满足薄型化、可挠曲、双面出光的需求。
可以理解的是，以上实施例仅用来说明本发明，并非用作对本发明的限定。对于本领域的普通技术人员来说，根据本发明的技术构思做出的其它各种相应的改变与变形，都落在本发明权利要求的保护范围之内。

Claims (10)

1.一种可挠式超薄发光体结构，其包括：柔性介电层、形成在所述柔性介电层表面的导电线路层、形成在所述导电线路层上的发光芯片及覆盖所述发光芯片的封装层，所述封装层覆盖所述发光芯片及填充发光芯片之间的间隙。
2.如权利要求1所述的可挠式超薄发光体结构，其特征在于，所述封装层的厚度介于1微米至500微米，所述封装层的热膨胀系数与所述介电层的热膨胀系数一致。
3.如权利要求1所述的可挠式超薄发光体结构，其特征在于，所述柔性介电层为透明的高分子薄膜，所述柔性介电层的厚度介于5微米至50微米，所述导电线路层的厚度为5至50微米。
4.一种可挠式超薄发光体结构的制作方法，其包括步骤：
提供支撑基板，在所述支撑基板的表面形成一层柔性介电层；
在所述柔性介电层的表面形成导电线路层；
在所述导电线路层的表面设置多个发光芯片；
在所述发光芯片的表面形成一层的封装层，所述封装层覆盖所述发光芯片及填充发光芯片之间的间隙；以及
将所述柔性介电层底面的所述支撑基板移除，以得到可挠式超薄发光体结构。
5.如权利要求4所述的可挠式超薄发光体结构的制作方法，其特征在于，在形成所述导电线路层之后还包括利用低温多晶硅技术在所述导电线路层的表面形成电路元件的步骤。
6.如权利要求4所述的可挠式超薄发光体结构的制作方法，其特征在于，所述导电线路层是通过溅镀、气相沉积或者电镀的方式形成在所述柔性介电层上，所述导电线路层的厚度为5至50微米。
7.如权利要求4所述的可挠式超薄发光体结构的制作方法，其特征在于，该支撑基板是通过弯折分离、蚀刻、激光切割或研磨的方式而移除。
8.如权利要求4所述的可挠式超薄发光体结构的制作方法，其特征在于，所述柔性介电层为透明的高分子薄膜，所述柔性介电层的厚度介于5微米至50微米。
9.如权利要求4所述的可挠式超薄发光体结构的制作方法，其特征在于，所述封装层的热膨胀系数与所述介电层的热膨胀系数一致，且所述封装层的厚度介于1微米至500微米。
10.如权利要求9所述的可挠式超薄发光体结构的制作方法，其特征在于，该封装层为聚对苯二甲酸乙二醇酯、环氧树脂、硅氧烷其中之一。
CN201810052258.4A 2018-01-18 2018-01-18 可挠式超薄发光体结构及其制作方法 Pending CN110056786A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201810052258.4A CN110056786A (zh) 2018-01-18 2018-01-18 可挠式超薄发光体结构及其制作方法
US15/920,596 US10297638B1 (en) 2018-01-18 2018-03-14 Flexible light source structure and method for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810052258.4A CN110056786A (zh) 2018-01-18 2018-01-18 可挠式超薄发光体结构及其制作方法

Publications (1)

Publication Number Publication Date
CN110056786A true CN110056786A (zh) 2019-07-26

Family

ID=66541190

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810052258.4A Pending CN110056786A (zh) 2018-01-18 2018-01-18 可挠式超薄发光体结构及其制作方法

Country Status (2)

Country Link
US (1) US10297638B1 (zh)
CN (1) CN110056786A (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112466957A (zh) * 2020-10-28 2021-03-09 杭州士兰微电子股份有限公司 光传感器封装体的封装方法及封装结构的封装方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040223328A1 (en) * 2003-05-09 2004-11-11 Lee Kian Shin Illumination unit with a solid-state light generating source, a flexible substrate, and a flexible and optically transparent encapsulant
CN102760846A (zh) * 2012-07-30 2012-10-31 信利半导体有限公司 一种柔性oled及其制备方法
CN102769109A (zh) * 2012-07-05 2012-11-07 青岛海信电器股份有限公司 柔性显示器的制作方法以及制作柔性显示器的基板
CN103337478A (zh) * 2013-06-26 2013-10-02 青岛海信电器股份有限公司 柔性有机电致发光二极管显示器的制作方法
CN103346163A (zh) * 2013-06-19 2013-10-09 青岛海信电器股份有限公司 一种柔性显示装置及其制造方法
CN103629575A (zh) * 2013-11-29 2014-03-12 华南理工大学 一种具有柔性透明衬底的led灯具
CN104300067A (zh) * 2013-07-16 2015-01-21 立碁电子工业股份有限公司 可挠式led封装
CN104779354A (zh) * 2014-01-09 2015-07-15 群创光电股份有限公司 有机发光二极管的封装结构及其制造方法
CN106449711A (zh) * 2016-10-24 2017-02-22 武汉华星光电技术有限公司 柔性amoled显示器的制作方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0208655D0 (en) * 2002-04-16 2002-05-29 Koninkl Philips Electronics Nv Electronic device with display panel and user input function
TW584948B (en) * 2003-05-19 2004-04-21 Windell Corp Package method of electronic devices
TWI389271B (zh) * 2009-04-10 2013-03-11 Ind Tech Res Inst 環境敏感電子元件之封裝體及其封裝方法
KR101372084B1 (ko) * 2010-06-29 2014-03-07 쿨레지 라이팅 인크. 항복형 기판을 갖는 전자 장치
US8754434B1 (en) * 2013-01-28 2014-06-17 Corning Incorporated Flexible hermetic thin film with light extraction layer
CN103150073B (zh) * 2013-03-12 2015-10-14 合肥京东方光电科技有限公司 一种电容式内嵌触摸屏及显示装置
ES2703956T3 (es) * 2013-03-15 2019-03-13 Carewear Corp Dispositivo transductor ultrasónico y de luz
TWI513060B (zh) 2013-07-05 2015-12-11 Ligitek Electronics Co Ltd 可撓式ｌｅｄ封裝
GB2524327A (en) * 2014-03-21 2015-09-23 Nokia Technologies Oy Flexible electronics apparatus and associated methods
US10739882B2 (en) * 2014-08-06 2020-08-11 Apple Inc. Electronic device display with array of discrete light-emitting diodes
WO2016041795A1 (en) * 2014-09-17 2016-03-24 Philips Lighting Holding B.V. Flexible light emitting device
US9478583B2 (en) * 2014-12-08 2016-10-25 Apple Inc. Wearable display having an array of LEDs on a conformable silicon substrate
CN105097863B (zh) * 2015-06-25 2018-09-18 合肥京东方显示光源有限公司 阵列型双面发光器件及其制作方法和双面显示装置
CN105449118B (zh) * 2016-01-04 2017-12-08 京东方科技集团股份有限公司 一种oled器件的封装结构、显示装置和封装方法
US9939920B2 (en) * 2016-03-03 2018-04-10 Microsoft Technology Licensing, Llc Keyset fingerprint sensor with backlight
US10056443B2 (en) * 2016-04-08 2018-08-21 Apple Inc. Electronic devices with displays

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040223328A1 (en) * 2003-05-09 2004-11-11 Lee Kian Shin Illumination unit with a solid-state light generating source, a flexible substrate, and a flexible and optically transparent encapsulant
CN102769109A (zh) * 2012-07-05 2012-11-07 青岛海信电器股份有限公司 柔性显示器的制作方法以及制作柔性显示器的基板
CN102760846A (zh) * 2012-07-30 2012-10-31 信利半导体有限公司 一种柔性oled及其制备方法
CN103346163A (zh) * 2013-06-19 2013-10-09 青岛海信电器股份有限公司 一种柔性显示装置及其制造方法
CN103337478A (zh) * 2013-06-26 2013-10-02 青岛海信电器股份有限公司 柔性有机电致发光二极管显示器的制作方法
CN104300067A (zh) * 2013-07-16 2015-01-21 立碁电子工业股份有限公司 可挠式led封装
CN103629575A (zh) * 2013-11-29 2014-03-12 华南理工大学 一种具有柔性透明衬底的led灯具
CN104779354A (zh) * 2014-01-09 2015-07-15 群创光电股份有限公司 有机发光二极管的封装结构及其制造方法
CN106449711A (zh) * 2016-10-24 2017-02-22 武汉华星光电技术有限公司 柔性amoled显示器的制作方法

Also Published As

Publication number Publication date
US10297638B1 (en) 2019-05-21

Similar Documents

Publication Publication Date Title
CN203932096U (zh) 柔性发光半导体装置以及用于支承并电连接发光半导体装置的柔性制品
EP1756880B1 (en) Composite optical lens with an integrated reflector
CN102598322B (zh) 发光装置及其制造方法
EP2075856B1 (en) Power Light Emitting Die Package With Reflecting Lens And The Method Of Making The Same
TWI528508B (zh) 高功率發光二極體陶瓷封裝之製造方法
CN101740685B (zh) 发光器件封装
US20090273005A1 (en) Opto-electronic package structure having silicon-substrate and method of forming the same
US20120248488A1 (en) Light-Emitting Diode Package and Manufacturing Method Thereof
US20110266586A1 (en) Led package and manufacturing method thereof
US7339196B2 (en) Packaging of SMD light emitting diodes
KR101622399B1 (ko) Ｌｅｄ 장치
CN102456634A (zh) 封装板与其制造方法
CN102549785A (zh) 发光装置
CN108962914A (zh) 电子装置与其制造方法
CN1825640A (zh) 半导体发光元件组成
EP2779813B1 (en) Flexible lighting device
JP5388877B2 (ja) 半導体発光装置及び半導体発光装置の製造方法
US20240204159A1 (en) Light emitting diode device
CN101436632B (zh) 具有散热基板的发光二极管芯片组件及其制作方法
CN110056786A (zh) 可挠式超薄发光体结构及其制作方法
CN102683546B (zh) 半导体封装结构与其制造方法
KR101926715B1 (ko) 마이크로 led 모듈 및 마이크로 led 모듈 제조 방법
CN103426875A (zh) 透明电极柔性led微显示阵列器件及制备方法
US20120074455A1 (en) Led package structure
KR100650263B1 (ko) 발광 소자 패키지 및 그의 제조 방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20190726