CN108962914A - 电子装置与其制造方法 - Google Patents

电子装置与其制造方法 Download PDF

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Publication number
CN108962914A
CN108962914A CN201710357379.5A CN201710357379A CN108962914A CN 108962914 A CN108962914 A CN 108962914A CN 201710357379 A CN201710357379 A CN 201710357379A CN 108962914 A CN108962914 A CN 108962914A
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China
Prior art keywords
thin
flexible substrate
film component
electronic device
conducting wire
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CN201710357379.5A
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CN108962914B (zh
Inventor
杨武璋
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Fanglue Electronics Co ltd
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GIO Optoelectronics Corp
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Priority to CN201710357379.5A priority Critical patent/CN108962914B/zh
Priority to EP18171301.7A priority patent/EP3404732A1/en
Priority to US15/973,854 priority patent/US10403650B2/en
Publication of CN108962914A publication Critical patent/CN108962914A/zh
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Abstract

本发明的题目是电子装置与其制造方法。本发明公开一种电子装置及其制造方法。电子装置的制造方法包括：形成软性基材于刚性载板上；形成至少一个薄膜元件于软性基材上；形成导电线路于软性基材上，其中导电线路与薄膜元件电性连接，导电线路的线宽介于1至10微米；形成至少一个电性连接垫于软性基材上并与导电线路电性连接，其中电性连接垫的厚度介于2至20微米；设置至少一个表面贴装元件于软性基材上，其中表面贴装元件通过电性连接垫及导电线路而与薄膜元件电性连接；以及移除刚性载板。

Description

电子装置与其制造方法
技术领域
本发明涉及一种电子装置，特别地，涉及一种电子装置与其制造方法。
背景技术
传统在制造电子装置(例如显示器)的过程中，是以半导体工艺制作而得到一颗一颗的半导体元件后转置在承载基材上，再使用选取头(pick-up head)自承载基材上一次捉取一个或多个元件后，以转置到例如电路基板上，再进行后续的其他工艺。但是，这种制作方式所需的设备成本相对较高，使得电子装置的成本较高，而且受限于设备的制作精度，使得制得的电子装置的元件密度也受到限制。
发明内容
本发明的目的为提供一种有别于现有技术的电子装置与其制造方法，使电子装置具有较高的元件设置密度。
为达上述目的，根据本发明的一种电子装置，包括软性电路板、至少一个薄膜元件以及至少一个表面贴装元件。软性电路板包含软性基材、导电线路及至少一个电性连接垫。导电线路设置于软性基材上。电性连接垫设置于软性基材上并与导电线路电性连接，电性连接垫的厚度介于2至20微米。薄膜元件设置于软性基材上并与导电线路电性连接。表面贴装元件设置于软性基材上，表面贴装元件通过电性连接垫及导电线路而与薄膜元件电性连接。
为达上述目的，根据本发明的一种电子装置的制造方法，包括：形成软性基材于刚性载板上；形成至少一个薄膜元件于软性基材上；形成导电线路于软性基材上，其中导电线路与薄膜元件电性连接，导电线路的线宽介于1至10微米；形成至少一个电性连接垫于软性基材上并与导电线路电性连接，其中电性连接垫的厚度介于2至20微米；设置至少一个表面贴装元件于软性基材上，其中表面贴装元件通过电性连接垫及导电线路而与薄膜元件电性连接；以及移除刚性载板。
在一个实施例中，软性基材包含有机高分子材料，有机高分子材料的玻璃转换温度介于摄氏400度至摄氏600度。
在一个实施例中，导电线路的线宽介于1至10微米。
在一个实施例中，薄膜元件为半导体元件。
在一个实施例中，软性基材包含动作区及周边区，薄膜元件位于动作区，表面贴装元件位于周边区，用以驱动薄膜元件。
在一个实施例中，这些薄膜元件的数量为多个，这些薄膜元件形成感测像素阵列。
在一个实施例中，软性基材包含动作区，薄膜元件与表面贴装元件位于动作区。
在一个实施例中，这些薄膜元件与这些表面贴装元件形成像素阵列。
在一个实施例中，薄膜元件包含至少一个薄膜电晶体，表面贴装元件包含至少一个发光二极管晶片。
在一个实施例中，电子装置可为指纹感测器、X光感测器或发光二极管显示器。
在一个实施例中，软性基材是以胶合或涂布方式设置，并经固化后形成于刚性载板上。
在一个实施例中，电性连接垫是以电镀、印刷、或蒸镀加剥离成型工艺制作而成。
在一个实施例中，薄膜工艺包含低温多晶硅工艺、非晶硅工艺或金属氧化物半导体工艺。
在一个实施例中，导电线路系利用铜箔压合后蚀刻或是薄膜工艺形成。
如上所述，在本发明的电子装置与其制造方法中，在软性基材上设置导电线路与至少一个电性连接垫，电性连接垫的厚度介于2至20微米，再设置至少一个薄膜元件并与导电线路与电性连接垫电性连接，且再设置表面贴装元件并通过电性连接垫及导电线路而与薄膜元件电性连接。因此，相比现有技术制作的电子装置而言，本发明的电子装置由于是在软性基材上通过薄膜工艺制作薄膜元件后再利用表面贴装技术(SMT)设置表面贴装元件(SMD)，因此，可以制作出很多精细的线路和元件，进而可提高元件设置密度。
附图说明
图1为本发明优选实施例的一种电子装置的制造方法的流程示意图。
图2A至图2E分别为本发明一个实施例的电子装置的制造过程示意图。
图3为本发明另一个实施例的电子装置的示意图。
图4A为本发明另一个实施例的电子装置的示意图。
图4B为本发明一个实施例的电子装置的电路示意图。
图5A为本发明另一个实施例的电子装置的俯视示意图。
图5B为一个实施例的图5A的电子装置的侧视示意图。
具体实施方式
以下将参照相关附图，说明根据本发明优选实施例的电子装置与其制造方法，其中相同的元件将以相同的附图标记加以说明。
请参照图1所示，其为本发明优选实施例的一种电子装置的制造方法的流程示意图。以下实施例所述的电子装置，可为发光二极管(LED)显示器、微发光二极管显示器(Micro-LED Display)、感测装置(例如指纹感测、指纹辨识器、X光感测器)、半导体装置或照明装置等等，本发明在此不做任何限制。
如图1所示，电子装置1制造方法包括以下步骤：形成软性基材(FlexibleSubstrate)于刚性载板上(步骤S01)、形成至少一个薄膜元件于软性基材上(步骤S02)、形成导电线路于软性基材上，其中导电线路与薄膜元件电性连接，导电线路的线宽介于1至10微米(步骤S03)、形成至少一个电性连接垫于软性基材上并与导电线路电性连接，其中电性连接垫的厚度介于2至20微米(步骤S04)、设置至少一个表面贴装元件(SMD)于软性基材上，其中表面贴装元件通过电性连接垫及导电线路而与薄膜元件电性连接(步骤S05)，以及移除刚性载板(步骤S06)。
以下，请参照图1并配合图2A至图2E所示，以说明上述步骤S01至步骤S06的详细内容。图2A至图2E分别为本发明一个实施例的电子装置1的制造过程示意图。
在步骤S01中，如图2A所示，形成软性基材111于刚性载板9上。刚性载板9可为可透光或是不可透光材料制成，例如但不限于，玻璃板、陶瓷板、金属板或石英板，本实施例是以玻璃板为例。另外，软性基材111具有可挠性，并可包含有机高分子材料，有机高分子材料的玻璃转换温度(Glass Transition Temperature,Tg)可介于摄氏400度至摄氏600度之间，借由如此高的玻璃转换温度，可使软性基材111在后续的工艺中，特性不会被破坏。其中，有机高分子材料可为热塑性材料，例如为聚酰亚胺(PI)、聚乙烯(Polyethylene,PE)、聚氯乙烯(Polyvinylchloride,PVC)、聚苯乙烯(PS)、压克力(丙烯，acrylic)、氟化聚合物(Fluoropolymer)、聚酯纤维(polyester)或尼龙(nylon)。本实施例的软性基材111的材料是以聚酰亚胺(PI)为例。
软性基材111例如可以胶合或涂布方式设置，并经固化(热固化或光固化)后形成于刚性载板9上。在本实施例中，是先在刚性载板9上涂布黏着层91后，再贴合软性基材111在黏着层91上经层压、固化后而成。其中，黏着层91的材料可例如但不限于，环氧树脂胶或硅烷偶联剂(Silane coupling agent,SCA)。另外，若以涂布方式设置软性基材111，则可直接将有机高分子材料涂布在刚性载板9上，经固化后在刚性载板9上直接形成一层软性基材111，而不需要粘着层。
接着，在步骤S02中，如图2B所示，是利用薄膜工艺在软性基材111上形成至少一个薄膜元件12。在此，薄膜工艺可为半导体工艺，薄膜元件12可为半导体元件，并直接形成而设置于软性基材111上；或者，薄膜元件12也可间接形成于软性基材111上，例如两者之间包含有缓冲层或绝缘层，并不限制。在一些实施例中，薄膜元件12可例如但不限于包含薄膜电晶体(TFT transistor)、光电晶体(photo transistor)、二极管(diode)、发光二极管(LED)、微发光二极管(μLED)、有机发光二极管(OLED)、光二极管(photo diode)、电容(capacitor)、电压控制电容器(voltage controlled capacitor)、电阻(resistor)、光电阻(photo resistor)、热电阻(thermal resistor)、等等，或其组合。另外，上述的薄膜工艺可包含低温多晶硅(LTPS)工艺、非晶硅(a-Si)工艺或金属氧化物(如IGZO)半导体工艺等，并不限制。在一些实施例中，除了在软性基材111上形成薄膜元件12之外，更可形成其他的绝缘膜层或导电膜层。
接着，在步骤S03中，是形成导电线路112于软性基材111上，其中导电线路112与薄膜元件12电性连接，且导电线路112的线宽可介于1至10微米。导电线路112的材料可使用金属(例如铝、铜、银、钼、钛)或其合金所构成的单层或多层结构，并利用铜箔压合后蚀刻或是利用薄膜工艺形成(可在薄膜元件12制作的过程中一起制作)，并不限制。其中，导电线路112可与薄膜元件12中所包含的导电膜层使用同一工艺或同一种材料。在一些实施例中，导电线路112可直接或间接通过其他导电层而与薄膜元件12电性连接，或者导电线路112也可为两个薄膜元件12之间相互电连接的导电线，并不限定。例如，本实施例是在软性基材111上形成两个导电线路112，且其中一个导电线路112与薄膜元件12电性连接。
另外，在步骤S04中，如图2C所示，是在软性基材111上形成至少一个电性连接垫(pad)113，且电性连接垫113与导电线路112电性连接。在此，例如，在两个导电线路112上分别制作一个电性连接垫113，使电性连接垫113与导电线路112电连接。电性连接垫113的材料例如但不限于为铜、银或金，或其组合。
为了使表面贴装元件13可容易与电性连接垫113接合而电连接，本实施例的电性连接垫113的厚度d需要比较厚，例如需介于2至20微米之间。为了制作较厚的电性连接垫113，在一些实施例中，可使用例如电镀、印刷、或蒸镀加剥离成型(Lift-off patterning)工艺方式在导电线路112上制作电性连接垫113。在另一些实施例中，也可使用薄膜工艺来制作。导电线路112与电性连接垫113在工艺上可以是不同膜层，或者也可以是同一膜层，并不限制。此外，电性连接垫113的工艺(步骤S04)与薄膜元件12的工艺(步骤S02)可以对调。换言之，可先进行薄膜元件工艺后再进行电性连接垫工艺，或者相反，本发明不限制。
另外，在进行表面贴装元件13的设置步骤S05之前，如图2D所示，为了接合表面贴装元件13与电性连接垫113，需先分别在电性连接垫113上设置导电件114。在此，导电件114的材料例如但不限于为焊钖或粘着材料。其中，粘着材料可依照所使用的接合方式来选择，当使用光固化方式(例如UV光)来接合表面贴装元件13时，则粘着材料可为UV胶；当使用热固化方式时，则粘着材料可为热固化粘着材料，例如异方性导电薄膜(AnisotropicConductive Film,ACF)等薄膜式(film type)粘着材料，或是异方性导电涂胶(anisotropic conductive paste,ACP)。
之后，再进行步骤S05：设置至少一个表面贴装元件13于软性基材111上，其中表面贴装元件13通过电性连接垫113及导电线路112而与薄膜元件12电性连接。在此，表面贴装元件13是使用表面粘着技术(SMT)设置在导电件114上，以通过导电件114与电性连接垫113连接。表面贴装元件13例如但不限于为双电极元件，包含但不限于发光二极管(LED)、微发光二极管(μLED)、光二极管(photo diode)，或是影像感测器(image sensor)；表面贴装元件13也可以是三电极元件(例如电晶体)，或是集成电路(IC，例如CPU)、主动元件、被动元件、连接器、或是其他功能的SMD，本发明并不限制。本实施例的表面贴装元件13是以具有二个电极131、132的LED为例。在一些实施例中，例如可通过加热方式熔化材料为焊钖的导电件114，使表面贴装元件13的电极131分别通过导电件114、电性连接垫113及导电线路112而与薄膜元件12电性连接，电极132通过另一个导电件114、另一个电性连接垫113而与另一个导电线路112连接(另一个导电线路112例如可与接地端或电源端连接，或与其他薄膜元件连接)。在本实施例中，是使用表面贴装技术(SMT)设置表面贴装元件13在软性基材111上，不需要用到现有技术的晶片转置工艺，因此工艺较简单，成本也较低。
最后，进行步骤S06，如图2E所示，移除刚性载板9。其中，可使用雷射剥离(Laserlift-off)或机械剥离技术来移除刚性载板9，之后，再去除黏着层91后就可得到具有以软板为系统(system on film,SOF)的电子装置1。
因此，在本实施例的电子装置1中，可包括软性电路板11、至少一个薄膜元件12以及至少一个表面贴装元件13。导电线路112设置于软性基材111上，电性连接垫113设置于软性基材111上并与导电线路112电性连接，电性连接垫113的厚度介于2至20微米，薄膜元件12设置于软性基材111上并与导电线路112电性连接，表面贴装元件13设置于软性基材111上，且表面贴装元件13通过电性连接垫113及导电线路112而与薄膜元件12电性连接。由于是在软性基材111上通过薄膜工艺制作薄膜元件12及设置导电线路112，而且更利用表面贴装技术设置表面贴装元件13，以通过电性连接垫113及导电线路112与薄膜元件12电性连接。因此，可以制作出很多精细的线路和元件，使得电子装置1可具有较高的元件设置密度。
另外，请参照图3所示，其为本发明另一个实施例的电子装置2的示意图。电子装置2可为指纹感测器或X光感测器，在此，以指纹感测器为例，并利用上述的制造方法制造出来。
在本实施例中，电子装置2包括软性电路板21、多个薄膜元件22及至少一个表面贴装元件23。其中，表面贴装元件23设置于软性基材211上，并与薄膜元件22电性连接(附图未示出导电线路与电性连接垫)。本实施例的软性电路板21的软性基材211包含动作区A1(如虚线区域所示)及周边区A2(如虚线区域所示)。其中，薄膜元件22位于动作区A1内，且表面贴装元件23位于周边区A2内(非动作区A1皆可视为周边区A2)，用以驱动薄膜元件22。在不同的实施例中，也可薄膜元件22位于周边区A2内，且表面贴装元件23位于动作区A1内，以借由薄膜元件22来驱动表面贴装元件23，并不限制。另外，更可通过保护层24设置且包覆薄膜元件22与表面贴装元件23，避免外界异物污染或损坏薄膜元件22或表面贴装元件23。
在本实施例中，薄膜元件22为指纹辨识元件，且其数量为多个，这些薄膜元件22形成感测像素阵列25(指纹感测像素阵列)。另外，表面贴装元件23用以驱动动作区A1的感测像素阵列25，当手指指头按压或位于感测像素阵列25(动作区A1)上的保护层24时，可通过感测像素阵列25与表面贴装元件23侦测并辨识指纹。
另外，请参照图4A所示，其为本发明又一个实施例的电子装置3的示意图。在此，电子装置3是以主动矩阵式发光二极管显示装置为例，并同样利用上述的制造方法制造出来。
在本实施例中，电子装置3包括软性电路板(未绘示)，多个薄膜元件32以及多个表面贴装元件33设置于软性电路板的软性基材311上，且表面贴装元件33分别与薄膜元件32电性连接(附图未示出导电线路与电性连接垫)。另外，本实施例的电子装置3更可包括扫描驱动电路34、数据驱动电路35、多个扫描线及多个数据线，这些多个数据线及这些扫描线分别设置于软性基材311上，且扫描驱动电路34是分别通过这些扫描线与薄膜元件32电性连接，数据驱动电路35是分别通过这些数据线与薄膜元件32电性连接。其中，扫描驱动电路34或数据驱动电路35可包含至少一个集成电路晶片，集成电路晶片可以覆晶技术(例如COF)设置于软性基材311上，或以薄膜工艺直接在软性基材311上形成扫描驱动电路34或数据驱动电路35，并不限制。
本实施例的软性电路板、薄膜元件32、表面贴装元件33，多个扫描线及多个数据线构成主动矩阵电路。在此，薄膜元件32包含至少一个薄膜电晶体，且表面贴装元件33包含至少一个发光二极管晶片(LED Chip)或至少一个微发光二极管晶片(μLED Chip)。本实施例的软性基材311上包含动作区A1，这些薄膜元件32与这些表面贴装元件33的数量皆为多个，且皆位于动作区A1内而形成显示像素阵列。其中，各像素可包含薄膜元件32与表面贴装元件33。换言之，每一个表面贴装元件33的发光二极管晶片(或微发光二极管晶片)可有多种组合，例如每一个表面贴装元件33可具有一只发光二极管晶片(或微发光二极管晶片)，或具有多只不同颜色的发光二极管晶片(例如三个晶片或微晶片分别为R、G、B三种颜色)，或具有四个晶片而具有三种颜色(例如R、R、G、B或W、R、G、B)。在此，并不加以限制。
请参照图4B所示，其为本发明一个实施例的电子装置3的相邻三个像素P1-P3的电路示意图。
在图4B的实施例中，各表面贴装元件33分别以一个颜色发光二极管晶片为例。在此，像素P1的表面贴装元件33例如以红色(R)，像素P2的表面贴装元件33例如以绿色(G)，像素P3的表面贴装元件33例如以蓝色(B)为例。另外，各发光二极管晶片(表面贴装元件33)的一端分别与电源VS连接，而各发光二极管晶片(表面贴装元件33)的另一个端分别与薄膜元件32电性连接。
在各像素中，例如像素P1，薄膜元件32与一条扫描线S1、一条数据线D1及一个表面贴装元件33(发光二极管晶片)电性连接。特别一提的是，本实施例的发光二极管晶片为无机发光二极管，与已知的薄膜工艺所制作的发光二极管不同，且发光二极管晶片为经过测试的良品，并以SMT设置于软性基材311上，故可根据使用者的需求而并接至想要的形状或尺寸，且完成后的电子装置3的良率可比已知的薄膜工艺所制作的显示器高，但生产成本可较低。
在本实施例的像素P1、P2、P3中，各数据线D1、D2、D3可分别接收数据信号以分别控制与其电连接的表面贴装元件33(发光二极管晶片)。不过，在其他的实施例中，一个薄膜元件32也可分别控制多个表面贴装元件33。另外，本实施例的像素P1、P2、P3的薄膜元件32分别包含至少一个开关电晶体M、驱动电晶体T及电容C。在此，以2T1C的电路架构为例，不过，也可为其它的电路架构，例如可为4T2C或5T1C。以下仅说明像素P1的电路结构。
在像素P1中，开关电晶体M的栅极与连接至扫描线S1，开关电晶体M的第一端M1与连接至像素P1的数据线D1连接，而开关电晶体M的第二端M2分别与驱动电晶体T的栅极及电容C的一端连接。另外，驱动电晶体T的第一端T1与像素P1电性连接的发光二极管晶片(R)连接，而驱动电晶体T的第二端T2及电容C的第二端分别接地。在此，薄膜元件32是发光二极管晶片的电流控制电路。当扫描线S1被驱动而导通时，数据线D1可传送数据信号，以控制与驱动电晶体T的第一端T1连接的发光二极管晶片(R)的发光亮度。同样，数据线D2可传送另一个数据信号，以控制发光二极管晶片(G)的发光亮度，而数据线D3可传送又一数据信号，以控制发光二极管晶片(B)的发光亮度。在此，数据信号可为一类比信号或数位信号。
此外，在上述实施例中所描述的电子装置3中，其上设置的发光二极管晶片若为可发出单色(例如蓝光)的发光二极管，所制成的电子装置3则可成为单色显示面板(monochrome display)。
因此，本发明的电子装置3可借由分别导通这些扫描线，并借由薄膜元件32分别接受这些数据线所传送的数据信号，以根据这些数据信号控制这些表面贴装元件33的发光二极管晶片的发光状态。其中，薄膜元件32可分别经由控制这些表面贴装元件33的工作周期(duty cycle)或电流值，以控制这些表面贴装元件33的发光二极管晶片的发光亮度。换言之，薄膜元件32可控制这些表面贴装元件33的发光二极管晶片的导通时间，或控制导通的电流来控制发光二极管晶片的发光亮度。
针对已知的被动矩阵式(PM)发光二极管显示器而言，由于发光二极管的驱动方式使得发光时间较短，导致有效亮度较低且瞬间电流较大，并且对扫描信号的频率需求较高，因此，为了达到较高亮度，发光二极管的尺寸也较大，使得显示器的尺寸也较大。但是，本实施例的电子装置3为主动矩阵发光二极管显示器，并通过在软性基材311上设置薄膜元件32与表面贴装元件33，且表面贴装元件33通过电性连接垫及导电线路(未绘示)而与薄膜元件32电性连接。因此，可使驱动电流较小就可达到相同的亮度，因此发光二极管晶片的尺寸也可较小，使得电子装置3的尺寸与成本较小，同时具有较高的产品信赖度。
此外，请参照图5A与图5B所示，其中，图5A为本发明又一个实施例的电子装置4的俯视示意图，而图5B为一个实施例的电子装置4的侧视示意图。
在图5A中，电子装置4包括软性电路板41、至少一个薄膜元件及至少一个表面贴装元件。薄膜元件设置于软性基材411的动作区A1，表面贴装元件设置于软性基材411的周边区A2，并通过电性连接垫及导电线路与薄膜元件电性连接(图中未示出薄膜元件、表面贴装元件、导电线路与电性连接垫)。
本实施例的薄膜元件的数量可为多个，并可组成像素阵列。其中，薄膜元件例如可为微发光二极管(μLED)或有机发光二极管(OLED)，并以例如但不限于低温多晶硅(LTPS)薄膜工艺在动作区A1上制作而成，使电子装置4为微发光二极管显示装置或为有机发光二极管显示装置。另外，周边区A2设置有驱动动作区A1的这些薄膜元件的驱动电路，该驱动电路可包含多个表面贴装元件，这些表面贴装元件可包含集成电路，例如为CPU，或为其他功能的表面贴装元件、导线或电路。其中，周边区A2的表面贴装元件也可例如但不限于以低温多晶硅(LTPS)薄膜工艺制作而成。
在一个实施例中，如图5B中，可将周边区A2弯折至软性基材411的下侧(可先半切割图5A的虚线处，方便弯折)，使周边区A2与动作区A1于软性基材411的垂直投影方向上至少有部分重迭。
在传统的显示装置中，一般是通过软板(例如COF)来分别连接印刷电路板与显示面板，使印刷电路板上设置的驱动电路可通过软板与显示面板电性连接，以驱动显示面板动作。在组装时，由于印刷电路板与显示面板之间的软板可弯折，因此一般的作法会利用软板将印刷电路板弯折至显示面板的下侧，以节省空间，不过，这样的作法会造成显示装置的整体厚度较厚。
但是，在图5B的实施例中，电子装置4是通过薄膜工艺于动作区A1制作薄膜元件，并利用表面贴装技术于周边区A2设置表面贴装元件，由于薄膜元件、表面贴装元件、导电线路与电性连接垫全都设置在软性基材411的同一表面上，因此，不仅可以在软性基材411上制作出很多精细的线路和元件，而且工艺较容易、简单且成本也较低。另外，由于可直接弯折软性基材411，使周边区A2上的驱动电路可位于动作区A1的下侧，因此，相比上述的传统作法而言，更可使电子装置4具有薄型化的优点。
综上所述，在本发明的电子装置与其制造方法中，在软性基材上设置导电线路与至少一个电性连接垫，电性连接垫的厚度介于2至20微米，再设置至少一个薄膜元件并与导电线路与电性连接垫电性连接，且再设置表面贴装元件并通过电性连接垫及导电线路而与薄膜元件电性连接。因此，相比现有技术制作的电子装置而言，本发明的电子装置由于是在软性基材上通过薄膜工艺制作薄膜元件后再利用表面贴装技术(SMT)设置表面贴装元件(SMD)，因此，可以制作出很多精细的线路和元件，进而可提高元件设置密度。
以上所述仅为举例性，而非为限制性。任何未脱离本发明的精神与范畴，而对其进行的等效修改或变更，均应包含在随附权利要求中。

Claims (22)

1.一种电子装置，其特征在于，包括：
软性电路板，包含：
软性基材；
导电线路，设置于所述软性基材上；及
至少一个电性连接垫，设置于所述软性基材上并与所述导电线路电性连接，所述电性连接垫的厚度介于2至20微米；
至少一个薄膜元件，设置于所述软性基材上并与所述导电线路电性连接；以及
至少一个表面贴装元件，设置于所述软性基材上，所述表面贴装元件通过所述电性连接垫及所述导电线路而与所述薄膜元件电性连接。
2.如权利要求1所述的电子装置，其特征在于，其中所述软性基材包含有机高分子材料，所述有机高分子材料的玻璃转换温度介于摄氏400度至摄氏600度。
3.如权利要求1所述的电子装置，其特征在于，其中所述导电线路的线宽介于1至10微米。
4.如权利要求1所述的电子装置，其特征在于，其中所述薄膜元件为半导体元件。
5.如权利要求1所述的电子装置，其特征在于，其中所述软性基材包含动作区及周边区，所述薄膜元件位于所述动作区，所述表面贴装元件位于所述周边区，用以驱动所述薄膜元件。
6.如权利要求5所述的电子装置，其特征在于，其中所述薄膜元件的数量为多个，所述薄膜元件形成感测像素阵列。
7.如权利要求1所述的电子装置，其特征在于，其中所述软性基材包含动作区，所述薄膜元件与所述表面贴装元件位于所述动作区。
8.如权利要求7所述的电子装置，其特征在于，其中所述薄膜元件与所述表面贴装元件形成像素阵列。
9.如权利要求8所述的电子装置，其特征在于，其中所述薄膜元件包含至少一个薄膜电晶体，所述表面贴装元件包含至少一个发光二极管晶片。
10.如权利要求1所述的电子装置，其特征在于，其为指纹感测器、X光感测器或发光二极管显示器。
11.一种电子装置的制造方法，其特征在于，包括以下步骤：
形成软性基材于刚性载板上；
形成至少一个薄膜元件于所述软性基材上；
形成导电线路于所述软性基材上，其中所述导电线路与所述薄膜元件电性连接，所述导电线路的线宽介于1至10微米；
形成至少一个电性连接垫于所述软性基材上并与所述导电线路电性连接，其中所述电性连接垫的厚度介于2至20微米；
设置至少一个表面贴装元件于所述软性基材上，其中所述表面贴装元件通过所述电性连接垫及所述导电线路而与所述薄膜元件电性连接；以及
移除所述刚性载板。
12.如权利要求11所述的制造方法，其特征在于，其中所述软性基材包含有机高分子材料，所述有机高分子材料的玻璃转换温度介于摄氏400度至摄氏600度。
13.如权利要求11所述的制造方法，其特征在于，其中所述软性基材是以胶合或涂布方式设置，并经固化后形成于所述刚性载板上。
14.如权利要求11所述的制造方法，其特征在于，其中所述薄膜元件为半导体元件。
15.如权利要求11所述的制造方法，其特征在于，其中所述软性基材包含动作区及周边区，所述薄膜元件位于所述动作区，所述表面贴装元件位于所述周边区，用以驱动所述薄膜元件。
16.如权利要求15所述的制造方法，其特征在于，其中所述薄膜元件的数量为多个，所述薄膜元件形成感测像素阵列。
17.如权利要求11所述的制造方法，其特征在于，其中所述软性基材包含动作区，所述薄膜元件与所述表面贴装元件位于所述动作区。
18.如权利要求17所述的制造方法，其特征在于，其中所述薄膜元件与所述表面贴装元件形成像素阵列。
19.如权利要求18所述的制造方法，其特征在于，其中所述薄膜元件包含至少一个薄膜电晶体，所述表面贴装元件包含至少一个发光二极管晶片。
20.如权利要求11所述的制造方法，其特征在于，其中所述电性连接垫是以电镀、印刷、或蒸镀加剥离成型工艺制作而成。
21.如权利要求11所述的制造方法，其特征在于，其中所述薄膜工艺包含低温多晶硅工艺、非晶硅工艺或金属氧化物半导体工艺。
22.如权利要求11所述的制造方法，其特征在于，其中所述导电线路系利用铜箔压合后蚀刻或是薄膜工艺形成。
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