CN109962082A - 电子封装单元与其制造方法及电子装置 - Google Patents
电子封装单元与其制造方法及电子装置 Download PDFInfo
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- CN109962082A CN109962082A CN201811422652.9A CN201811422652A CN109962082A CN 109962082 A CN109962082 A CN 109962082A CN 201811422652 A CN201811422652 A CN 201811422652A CN 109962082 A CN109962082 A CN 109962082A
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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- Structure Of Printed Boards (AREA)
Abstract
本发明揭露一种电子封装单元与其制造方法及电子装置。该制造方法包括:提供绝缘基板,其中绝缘基板具有相对的第一表面与第二表面;形成多个次矩阵电路于绝缘基板上,各次矩阵电路包含至少一个薄膜晶体管;设置至少一个功能晶片于第一表面上,其中功能晶片与次矩阵电路电性连接;形成多个通孔于绝缘基板并将至少一种导电材料设置于这些通孔,使功能晶片经由这些次矩阵电路及导电材料电性连接至第二表面;设置保护层于第一表面并覆盖这些功能晶片;以及切割绝缘基板及保护层,以形成多个电子封装单元。
Description
技术领域
本发明涉及一种电子封装单元与其制造方法及电子装置。
背景技术
传统的光电装置的制造中,都是在基材上制作多个薄膜晶体管而形成薄膜晶体管基板后,利用薄膜晶体管驱动对应的光电元件。以有机发光二极管显示设备为例,这种以薄膜晶体管驱动有机发光二极管发光的作法,若有多种不同产品尺寸或功能时,必须针对每一种有机发光二极管装置的产品尺寸或功能设计对应的薄膜工艺,而且需使用昂贵的薄膜晶体管工艺/掩膜/基板/材料,十分不利于变化多样的产品需求,应用上也相当没有弹性。
发明内容
本发明的目的是提供一种电子封装单元与其制造方法及电子装置。本发明不需针对每一种产品尺寸与功能设计其工艺,除了可以节省昂贵的薄膜晶体管工艺/掩膜/基板/材料的费用而使成本较低外,更具有应用上的弹性而可适用于变化多样的产品需求。
为达上述目的,依据本发明的一种电子封装单元的制造方法,该制造方法包括:提供绝缘基板,其中绝缘基板具有相对的第一表面与第二表面;形成多个次矩阵电路于绝缘基板上,各次矩阵电路包含至少一个薄膜晶体管;设置至少一个功能晶片于第一表面上,其中功能晶片与次矩阵电路电性连接;形成多个通孔于绝缘基板并将至少一种导电材料设置于这些通孔,使功能晶片经由这些次矩阵电路及导电材料电性连接至第二表面;设置保护层于第一表面并覆盖这些功能晶片;以及切割绝缘基板及保护层,以形成多个电子封装单元。
在一个实施例中,在形成这些通孔的步骤中,通过激光照射绝缘基板,以在绝缘基板上形成这些通孔。
在一个实施例中,该制造方法还包括:设置导电材料是由第二表面对这些通孔进行表面处理,以在这些通孔内形成导电层。
在一个实施例中,各次矩阵电路还包括至少一个扫描线与至少一个数据线,薄膜晶体管与扫描线及数据线电性连接。
在一个实施例中,功能晶片包含光电晶片、热电晶片、压电晶片、或感测晶片。
在一个实施例中,该制造方法还包括:电性连接导电材料至驱动电路板,驱动电路板包含至少一个驱动晶片。
在一个实施例中,导电材料是利用表面贴装技术或利用异方性导电膏贴附以电性连接至驱动电路板。
在一个实施例中,绝缘基板的材质包含玻璃、树脂、或陶瓷。
为达上述目的,依据本发明的一种电子封装单元,其搭配驱动电路板,电子封装单元包括绝缘基板、次矩阵电路、至少一个功能晶片以及保护层。绝缘基板具有多个通孔及相对的第一表面和第二表面。次矩阵电路设置于绝缘基板上,次矩阵电路包括至少一个薄膜晶体管。功能晶片设置于第一表面,功能晶片经由次矩阵电路及这些通孔与驱动电路板电性连接。保护层设置于绝缘基板的第一表面并覆盖功能晶片。
在一个实施例中,绝缘基板的厚度小于50微米,薄膜晶体管的厚度小于20微米。
在一个实施例中,绝缘基板的材质包含玻璃、树脂、或陶瓷。
在一个实施例中,次矩阵电路还包括至少一个扫描线与至少一个数据线,薄膜晶体管与扫描线及数据线电性连接。
在一个实施例中,电子封装单元包括多个功能晶片,其中,与这些功能晶片电性连接的这些次矩阵电路形成矩阵电路。
在一个实施例中,多个电子封装单元的这些次矩阵电路组合形成矩阵电路。
在一个实施例中,驱动电路板包含至少一个连接电路,连接电路包含多个连接垫及多个导线,这些连接垫与这些导线串接这些次矩阵电路。
在一个实施例中,驱动电路板还包含至少一个驱动晶片,驱动晶片经由这些连接电路电性连接这些电子封装单元的次矩阵电路。
在一个实施例中,功能晶片包含光电晶片、热电晶片、或压电晶片。
在一个实施例中,电子封装单元的边长大于50微米。
为达上述目的,依据本发明的一种电子装置,包括多个电子封装单元以及驱动电路板。各电子封装单元包含绝缘基板、至少一个次矩阵电路、至少一个功能晶片及保护层。绝缘基板具有多个通孔及相对的第一表面和第二表面。次矩阵电路设置于绝缘基板上,次矩阵电路包括至少一个薄膜晶体管。功能晶片设置于绝缘基板的第一表面。保护层设置于绝缘基板的第一表面并覆盖功能晶片。驱动电路板面对于绝缘基板的第二表面,这些功能晶片分别经由这些次矩阵电路及这些通孔与驱动电路板电性连接。
承上所述,在本发明的电子封装单元与其制造方法、电子装置中,通过将绝缘基板上的多个次矩阵电路和功能晶片封装在一起,并利用导电材料使功能晶片经由这些次矩阵电路及导电材料电性连接至绝缘基板的第二表面,由此可以达成利用同一种薄膜晶体管基板(电子封装单元)共享于许多不同电子装置的目的。因此,本发明不需针对每一种电子装置的产品尺寸或功能设计薄膜工艺,除了可以节省昂贵的薄膜晶体管工艺/掩膜/基板/材料的费用而使成本较低外,更具有应用上的弹性而可适用于变化多样的产品需求。
附图说明
图1为本发明较佳实施例的一种电子封装单元的制造方法的流程示意图。
图2A至图2F分别为本发明一实施例的电子封装单元的制造过程示意图。
图3A至图3C分别为本发明另一实施例的电子封装单元的制造过程示意图。
图4A为本发明一实施例的电子封装单元与驱动电路板配合应用的示意图。
图4B为本发明一实施例的多个电子封装单元与驱动电路板的俯视示意图。
图5A与图5B分别为本发明另一实施例的电子封装单元的电路示意图与布局示意图。
图6A与图6B分别为图5B的电子封装单元中沿直线A-A与直线B-B的剖视示意图。
图6C与图6D分别为图5B的电子封装单元沿直线B-B的剖视的不同实施方式示意图。
图7为本发明一实施例的电子装置的布局示意图。
具体实施方式
以下将参照相关附图,说明依据本发明较佳实施例的电子封装单元与其制造方法及电子装置,其中相同的元件将以相同的附图标记加以说明。
图1为本发明较佳实施例的一种电子封装单元的制造方法的流程示意图。如图1所示,电子封装单元的制造方法可包括:提供绝缘基板,其中绝缘基板具有相对的第一表面与第二表面(步骤S01);形成多个次矩阵电路于绝缘基板上,各次矩阵电路包含至少一个薄膜晶体管(步骤S02);设置至少一个功能晶片于第一表面上,其中功能晶片与次矩阵电路电性连接(步骤S03);形成多个通孔于绝缘基板并将至少一种导电材料设置于这些通孔,使功能晶片经由这些次矩阵电路及导电材料电性连接至第二表面(步骤S04);设置保护层于第一表面并覆盖这些功能晶片(步骤S05);以及切割绝缘基板及保护层,以形成多个电子封装单元(步骤S06)。其中,绝缘基板可包含硬性基材或软性基材。在一些实施例中,若绝缘基板为软性基材时,为了使后续的元件可通过后续工艺顺利地形成在软性基材上,且方便对于此软性基板操作,则需先将软性基材形成于刚性载板上(可例如通过黏着层黏着),且在之后的步骤,再移除上述刚性载板。不过,若绝缘基板为硬性基材时,则不需要。另外,上述的步骤顺序并不一定依照S01至S06的顺序,在不同的实施例中,其顺序可能不同,以下会以实施例来说明。
请参照图1并配合图2A至图2F,以说明上述的每个步骤。其中,图2A至图2F分别为本发明一实施例的电子封装单元1的制造过程示意图。
首先,如图2A所示,步骤S01为:提供绝缘基板11,其中绝缘基板11具有相对的第一表面S1与第二表面S2。绝缘基板11的材质可为玻璃、树脂、金属或陶瓷、或是复合材质。其中,树脂材质可具有可挠性,并可包含有机高分子材料,有机高分子材料的玻璃转换温度(Glass Transition Temperature,Tg)例如可介于摄氏250度至摄氏600度之间,较佳的温度范围例如可介于摄氏300度至摄氏500度之间。借由如此高的玻璃转换温度,可在后续的工艺中直接进行薄膜工艺而形成薄膜晶体管与其他元件或线路。在此,有机高分子材料可为热塑性材料,例如为聚酰亚胺(PI)、聚乙烯(Polyethylene,PE)、聚氯乙烯(Polyvinylchloride,PVC)、聚苯乙烯(PS)、压克力(丙烯,acrylic)、氟化聚合物(Fluoropolymer)、聚酯纤维(polyester)或尼龙(nylon)。在一些实施例中,若绝缘基板11想为软性基板时,可利用聚酰亚胺(PI)的材料,先将PI基材以例如胶合或涂布方式设置,并经固化(热固化或光固化)后形成于刚性载板上,即形成软性基板。
接着,如图2A所示,步骤S02:形成多个次矩阵电路121于绝缘基板11上,其中各次矩阵电路121可包含至少一个薄膜晶体管。在此,绝缘基板11上的各次矩阵电路121可彼此连接或不连接,不连接时即为各次矩阵电路121间隔设置。另外,各次矩阵电路121还可包含交错的第一导线和第二导线。再者,多个次矩阵电路121可定义成矩阵电路12,在此,次矩阵电路121可为矩阵电路12的最小单位或其组合,任意多个次矩阵电路121可组合成矩阵电路12,而组合成的矩阵电路12可为矩形、菱形、三角形、或其他凹多边形或凸多边形,各次矩阵电路121可包含至少一个薄膜晶体管T。本实施例的薄膜晶体管T是以薄膜工艺形成在绝缘基板11的上表面(第一表面S1)上为例,在不同的实施例中,薄膜晶体管T也可形成在绝缘基板11的下表面(第二表面S2)上,并不限制。次矩阵电路121除了薄膜晶体管T之外,还可包含其他的薄膜元件或线路,例如薄膜电阻、电容、导电层、金属层、第一导线或第二导线等。在一些实施例中,绝缘基板11的厚度可小于50微米,薄膜晶体管T的厚度可小于20微米,绝缘基板11加上矩阵电路12的全部厚度例如可小于100微米,因此可使得整个电子封装单元1易于弯折而具有可挠性。上述的薄膜工艺可为半导体工艺,并可包含低温多晶硅(LTPS)工艺、非晶硅(α-Si)工艺或金属氧化物(如IGZO)半导体工艺,并不限制。
之后,可利用例如印刷工艺制作电性连接垫122。在一些实施例中,为了方便进行后续的晶片封装工艺,可在步骤S02完成之后,先将图2A的基板切割为适当尺寸以适用于封装工艺设备。接着,如图2B所示,步骤S03:设置至少一个功能晶片13于绝缘基板11的第一表面S1上,其中功能晶片13与次矩阵电路121电性连接。在此,功能晶片13可以引线键合(wirebonding)或覆晶接合(flip chip)设置于绝缘基板11的第一表面S1上,并与次矩阵电路121电性连接。在一些实施例中,功能晶片13可包含光电晶片、热电晶片、压电晶片或感测晶片。在此,光电晶片可包含但不限于为发光二极管晶片(LED chip)、微发光二极管晶片(microLED chip),或是其他的光电晶片,而感测晶片可包含红外线感测晶片、超音波感测晶片、温度感测晶片、或影像传感器(image sensor)。当功能晶片13为光电晶片、压电晶片或是热电晶片时,在矩阵电路12外的控制器可经由第一导线、第二导线以及薄膜晶体管T来控制功能晶片13的开关;当功能晶片13为感测晶片时,则由功能晶片感测到的数据,可由第一导线、第二导线以及薄膜晶体管传送至外部。
另外,本实施例的各次矩阵电路121还可包括至少一个金属层123,金属层123设置于绝缘基板11的第一表面S1上,而至少一个电性连接垫122则形成于金属层123上并与金属层123连接,使功能晶片13可经由电性连接垫122与次矩阵电路121的金属层123电性连接。在此,功能晶片13与电性连接垫122的接合方式可为引线键合(wire bonding)或覆晶接合(flip chip)、共晶接合(eutectic bonding,例如Au-Sn)、异方性导电薄膜(AnisotropicConductive Film,ACF)接合、异方性导电涂胶(anisotropic conductive paste,ACP)接合、锡球接合或超声波接合,本发明不特别限定。在本实施例中,功能晶片13可为光电晶片(例如为LED),且其电极可使用覆晶接合(flip chip)设置在电性连接垫122上,以通过电性连接垫122、金属层123与薄膜晶体管T电性连接为例。在一些实施例中,例如可通过加热方式熔化材料为锡球或金凸块(Au bump)等导电材料,或者利用铜胶、银胶、或异方性导电胶(ACP)等材料,使功能晶片13的两电极分别与电性连接垫122及金属层123电性连接。在一些实施例中,与功能晶片13的两电极E1、E2(图中未标示)电连接的电性连接垫122可例如但不限于为加厚的铜胶焊垫。
如图2C所示,步骤S04为形成多个通孔H于绝缘基板11并将至少一种导电材料(未绘示)设置于这些通孔H,使功能晶片13经由这些次矩阵电路121及导电材料电性连接至第二表面S2。在此,可通过激光(例如雷射)照射绝缘基板11,以形成贯通第一表面S1与第二表面S2的多个通孔H。其中,激光可由第一表面S1往下照射绝缘基板11而形成通孔H;或由第二表面S2往上照射绝缘基板11而形成通孔H,以曝露出部分的金属层123。图2C的实施例是以激光由第二表面S2往上照射绝缘基板11而形成通孔H为例。在此实施例中,功能晶片13的其中一个电极以及薄膜晶体管T的其中两个电极(栅极与源极,或栅极与漏极)可经由通孔H填入导电材料后而电性导通至第二表面S2。另外,为了使导电材料与金属层123的接着力较好,在一些实施例中,如图2D所示,更可由第二表面S2对通孔H内的金属层123进行表面处理工艺,以在通孔H内形成导电层15,由此提高金属层123与导电材料的接合强度,使功能晶片13与次矩阵电路121可经由通孔H与导电材料电性连接至第二表面S2,例如电性连接至设置于第二表面S2的连接垫。其中,表面处理可为化学镀锡、化学镀金、及/或涂布铜胶,并不限制。特别一提的是,在步骤S04中,若是由第二表面S2形成通孔H而且绝缘基板11的材料是软性基材(例如PI)的话,则需在形成通孔H之前先将刚性基材移除,才能进行钻孔工艺。
接着,如图2E所示,步骤S05为设置保护层14于绝缘基板11的第一表面S1并覆盖这些功能晶片13。在此,保护层14可利用树脂转注成型(Resin Transfer Molding)或是密封胶点胶覆盖在这些功能晶片13上。本实施例的保护层14除了覆盖这些功能晶片13外,还可覆盖至少部分所述次矩阵电路121,以保护次矩阵电路121与功能晶片13,避免被异物或水气侵入而破坏其特性。
再说明的是,在上述的步骤S03~步骤S05中,若是由第二表面S2形成通孔H的话,则可在进行功能晶片13的设置(步骤S03)后,先进行保护层14的设置(步骤S05),再进行形成通孔H与设置导电材料的步骤S04。此外,若是由第一表面S1形成通孔H的话,则可先进行形成通孔H并填入导电材料(例如铜胶)的步骤S04之后,再进行功能晶片13的设置(步骤S03),之后,再进行保护层14的设置(步骤S05)。
最后,如图2F所示,步骤S06为:切割绝缘基板11及保护层14,以形成多个电子封装单元1。在一些实施例中,制造方法还可包括:电性连接导电材料至驱动电路板(未图示)。在此,导电材料可例如利用表面贴装技术或利用异方性导电膏贴附以电性连接至驱动电路板。其中,驱动电路板可包含至少一个驱动晶片及连接电路,且驱动晶片可经由连接电路并经由连接垫、导电材料与次矩阵电路121驱动功能晶片13。
请参照图3A至图3C所示,其分别为本发明另一实施例的电子封装单元的制造过程示意图。
在本实施例中,在完成上述的步骤S01与步骤S02之后,如图3A所示,激光可由第一表面S1往下照射绝缘基板11而形成通孔H,之后,如图3B所示,可由第一表面S1填入导电材料16至通孔H内,使功能晶片13可经由次矩阵电路121及导电材料16电性连接至第二表面S2。在此,导电材料16例如但不限于铜胶、银胶、锡膏或异方性导电胶(ACP)等材料经固化而成。另外,若导电材料16以铜胶为例的话,则填充在通孔H内的铜胶可部分外露于绝缘基板11的第一表面S1,以直接在绝缘基板11的第一表面S1侧形成电性连接垫122的形式,使功能晶片13与次矩阵电路121可经由电性连接垫122、通孔H内的导电材料16电性连接至第二表面S2,如图3C所示。当然,也可在导电材料16上例如以印刷工艺形成电性连接垫122,并不限制。另外,若由第一表面S1填入导电材料16(例如铜胶)至通孔H时可部份位于第二表面S2,且外露于第二表面S2的导电材料16也可再进行表面处理,防止外露的导电材料16氧化。此外,若绝缘基板11是软性基材,且是由第一表面S1形成通孔H并填入导电材料16的话,则可在对导电材料16进行表面处理前再将刚性基材移除,或是在设置保护层14的步骤S05之后,再移除刚性基材即可。
请参照图4A所示,其为本发明一实施例的电子封装单元1a与驱动电路板2配合应用的示意图。本实施例的电子封装单元1a可搭配驱动电路板2。电子封装单元1a可包括绝缘基板11、至少一个次矩阵电路121、至少一个功能晶片13以及保护层14。绝缘基板11具有多个通孔H及相对的第一表面S1和第二表面S2,次矩阵电路121设置于绝缘基板11的第一表面S1上,且次矩阵电路121可包括至少一个薄膜晶体管T。功能晶片13设置于第一表面S1,且功能晶片13经由次矩阵电路121及这些通孔H与驱动电路板2电性连接。保护层14设置于绝缘基板11的第一表面S1并覆盖功能晶片13与次矩阵电路121。另外,电子封装单元1a的其他技术特征可参照上述的电子封装单元1,在此不再赘述。
在一些实施例中,电子封装单元1a的边长可大于50微米。在一些实施例中,电子封装单元1a的边长可介于400微米~600微米之间。在一些实施例中,电子封装单元1a可包括多个薄膜晶体管T。在一些实施例中,电子封装单元1a可包括多个功能晶片13,亦即一个封装单元内可包括有多个功能晶片13或多个薄膜晶体管T。另外,与这些功能晶片13电性连接的这些次矩阵电路121可形成矩阵电路。在一些实施例中,也可多个电子封装单元1a的多个次矩阵电路121组合而形成一个矩阵电路。其中,矩阵电路与驱动电路板2电性连接,以经由驱动电路板2驱动这些电子封装单元1a的矩阵电路中的这些功能晶片13。此外,驱动电路板2可为软性电路板或硬性电路板,并不限制。
在本实施例中,驱动电路板2是面对绝缘基板11的第二表面S2,且功能晶片13可分别经由次矩阵电路121、这些通孔H、这些连接垫P而与驱动电路板2电性连接,使驱动电路板2可驱动电子封装单元1a。其中,通孔H内可填满导电材料16(例如铜胶、银胶、锡膏或ACP等材料),使驱动电路板2可通过这些连接垫P、这些通孔H内的导电材料16与功能晶片13及次矩阵电路121电性连接。在一些实施例中,导电材料16可例如利用表面贴装技术(SurfaceMount Technology,SMT),或利用异方性导电膏(anisotropic conductive paste,ACP)等方式,贴附以电性连接至驱动电路板2。在一些实施例中,这些连接垫P可为导电材料16(例如铜胶)填入通孔H且外露于绝缘基板11的第二表面S2经固化而形成。换言之,这些连接垫P与导电材料16的材料可为相同。
请参照图4B所示,其为本发明一实施例的多个电子封装单元1a与驱动电路板2a电性连接的俯视示意图。本实施例的驱动电路板2a可包含至少一个驱动晶片(在此显示两个驱动晶片21a、21b)、至少一个连接电路22(在此显示多个连接电路22)及基材23,基材23可为软性基材或硬性基材,且驱动晶片21a、21b与多个连接电路22可设置于基材23上,并面对绝缘基板11的第二表面。
多个电子封装单元1a间隔设置于驱动电路板2a上(可依客户端的需求,而排列成直行、或横列、或行与列的矩阵状,或是排列成多边形或不规则状),且分别与驱动电路板2a电性连接。本实施例的多个电子封装单元1a是组成行与列排列的矩阵状,以成为一个主动矩阵式(AM)电子装置,例如但不限于为主动矩阵式LED显示器、主动矩阵式microLED显示器、主动矩阵式传感器阵列、主动矩阵式天线阵列、主动矩阵式雷射阵列、主动矩阵式投影阵列、或主动矩阵式毫米波雷达阵列。
在一些实施例中,连接电路22可包含多个连接垫P与多个导线L,且连接电路22的这些连接垫P与这些导线L可串接电子封装单元1a的次矩阵电路121。各电子封装单元1a的功能晶片13可分别经由次矩阵电路121、通孔、连接垫P及对应的导线L(连接电路22)而分别与驱动电路板2a的对应的驱动晶片21a、21b电性连接,使驱动电路板2a可分别驱动这些电子封装单元1a,或是接受这些电子封装单元1a的感测数据。在一些实施例中,驱动晶片21a可例如但不限于包含扫描驱动晶片,而驱动晶片21b可例如但不限于包含数据驱动晶片,且驱动晶片21a、21b可分别通过对应连接的连接电路22驱动对应的电子封装单元1a。其中,驱动电路板2a的连接电路22在此以二维的虚线为例,连接电路22的多个导线L则为一段段的二维虚线,也就是说有纵向也有横向的,但彼此未电性连接。经由具有次矩阵电路121的电子封装单元1a跨接后,即可组合成一个面积及形状都更有设计自由度的矩阵式电子装置。也就是说,厂商可自行设计所需的驱动电路板2a尺寸,再将电子封装单元1a电性连接上去,即可完成电子装置。电子封装单元1a与驱动电路板2a的技术特征可参照上述的相同元件,于此不再赘述。
图5A与图5B分别为本发明另一实施例的电子封装单元1b的电路示意图与布局示意图,而图6A与图6B分别为图5B的电子封装单元1b中,沿直线A-A与直线B-B的剖视示意图。在此,图5A的电子封装单元1b的电路是以2T1C为例。
如图5A与图5B所示,在本实施例中,电子封装单元1b的次矩阵电路121b(图6A)包括两个薄膜晶体管T1、T2、至少一个扫描线SL、至少一个数据线DL与电容C。薄膜晶体管T1、T2分别与扫描线SL及数据线DL电性连接,本实施例的功能晶片13例如为发光二极管(LED,以虚线方框作表示)。电子封装单元1b的元件连接关系可参照图5A的电路,在此不再多作说明。此外,可通过驱动电路板(未图示)面对电子封装单元1b的绝缘基板11的第二表面S2,且这些功能晶片13可分别经由次矩阵电路121b及这些通孔H与驱动电路板电性连接,使驱动电路板可通过这些连接垫P驱动电子封装单元1b。
在图5B中,包括有电连接至数据信号(数据线DL)的连接垫P1、电连接至扫描信号(扫描线SL)的连接垫P2及电连接至电压(Vdd)的连接垫P3。特别说明的是,在上述形成通孔H的步骤中,因为在绝缘基板11上钻孔需一定的面积,并仅针对绝缘基板11钻孔,若不伤害到第一表面S1侧的连接垫的话,钻孔后即可通过导电材料而导通;另外,若钻孔后填入通孔H的导电材料是以铜胶为例的话,则填充在通孔H内的铜胶可外露于绝缘基板11的第一表面S1与第二表面S2,以直接在绝缘基板11的第一表面S1侧与第二表面S2侧都形成有连接垫的情况(例如图5B的形式)。在此情况下,钻孔面积可以小于或等于第一表面S1侧的连接垫的面积;而位于第二表面S2侧且由铜胶形成的连接垫的尺寸可以小于、等于或大于第一表面S1侧的连接垫P的尺寸,并不限制。
如图5B、图6A与图6B所示,扫描信号可通过位于第二表面S2侧的连接垫(未图示)、通孔H2(及连接垫P2)与薄膜晶体管T1的栅极(金属层123)电连接,数据信号可通过位于第二表面S2侧的连接垫(未图示)、通孔H1(及连接垫P1)、金属层123与薄膜晶体管T1的漏极(或源极)电连接,而电压Vdd可通过位于第二表面S2侧的连接垫(未图示)、通孔H3(及连接垫P3)电连接至金属层123与薄膜晶体管T2的漏极(或源极),且另一电压Vss(例如接地)可通过位于第二表面S2侧的连接垫(未图示)、通孔H4电连接至金属层123与功能晶片13的电极E1。此外,电子封装单元1b的其他技术特征可参照上述的电子封装单元1或1a,在此不再说明。
另外,请参照图6C与图6D所示,其分别为图5B的电子封装单元沿直线B-B的剖视的不同实施方式示意图。
在图6B中,与功能晶片13的电极E2电连接的次矩阵电路121b由绝缘基板11的第一表面S1往上依序为绝缘层124、金属层125(薄膜晶体管T2的源极或漏极)与电性连接垫122,但在图6C中,与功能晶片13电连接的电极E2的次矩阵电路由绝缘基板11的第一表面S1往上依序为金属层123、金属层125(薄膜晶体管T2的源极或漏极)与电性连接垫122(绝缘层124具有通孔,金属层125位于通孔内)。另外,在图6D中,与功能晶片13的电极E2电连接的次矩阵电路由绝缘基板11的第一表面S1往上依序为金属层123与电性连接垫122(绝缘层124具有通孔,电性连接垫122位于通孔内),且薄膜晶体管T2的源极或漏极(金属层125)通过金属层123与电性连接垫122及功能晶片13的电极E2电性连接。
图7为本发明一实施例的电子装置3的布局示意图。如图7所示,在本实施例中,电子装置3以包括有三个并排配置且电连接的电子封装单元1b(以矩形虚线表示)以及驱动电路板(未显示,但可例如图4B的驱动电路板2a)为例,其中,驱动电路板可面对绝缘基板11a的第二表面,且这些功能晶片13可分别经由这些次矩阵电路及这些通孔内的导电材料与驱动电路板电性连接,使驱动电路板可驱动这些电子封装单元1b。其中,驱动电路板可包括上述驱动电路板2、2a的所有技术特征,而驱动电路板2、2a与电子封装单元1b的技术内容已在上述中详述,在此不再多作说明。
在一些实施例中,电子装置3的三个电子封装单元1b可为三个次像素,三个次像素中的三个功能晶片13可分别为红色、蓝色与绿色的LED,以形成全彩的像素单元,由此可构成全彩的LED显示器,且可通过驱动电路板驱动这些电子封装单元1b显示影像。当然,在不同的实施例中,也可更小于或大于3个电子封装单元1b组合成一个电子装置,本发明并不限制。由于各电子封装置单元1b具有次矩阵电路,而多个次矩阵电路的组合可以驱动电路板上形成任何尺寸的主动矩阵电路以及相对应的功能晶片矩阵,由此能控制功能晶片或是接受由功能晶片来的信号。
承上所述,本案的电子封装单元可依据电子装置的产品应用需求而拼接出想要的尺寸,应用弹性相当大。另外,在公知的电子装置中,利用引线框架(lead frame)进行驱动的方式都是被动矩阵式(PM),使得驱动IC的用量较多,但是本案由多个电子封装单元组成的电子装置可为主动矩阵式电子装置,在相同分辨率的情况下,驱动IC的用量可以较少,成本可较低。在一些实施例中,若电子装置为LED或microLED背光源时,还可达成局部调光(local dimming)的功能。
此外,在传统薄膜晶体管驱动光电元件的作法,例如以薄膜晶体管基板上的薄膜晶体管驱动有机发光二极管(OLED)发光时,需针对每一种产品的尺寸或功能进行设计而使用昂贵的薄膜晶体管工艺、掩膜、基板与材料,十分不利于变化多样的产品需求。但本案将矩阵电路拆分为多个次矩阵电路,并和功能晶片封装在一起,可以达成同一种薄膜晶体管基板(电子封装单元)共享于许多产品的目的,由此可解决上述问题。同时,在实施相同像素面积但不同分辨率的显示器时,本案的电子封装单元可任意组合,较直接以大基板形成的显示器而言,本案可省下掩膜套数、降低成本。此外,所需薄膜晶体管基板的总面积(即次矩阵电路基板的面积总和)远小于传统TFT矩阵基板面积的作法,更可进一步降低电子装置的成本。因此,本案应用在制作大尺寸的电子装置时,可使大尺寸的基板具有较佳的面积利用率,并且经由不同的应用组合可形成多样的尺寸,可善用薄膜晶体管基板的切割而节省制造成本。
综上所述,在本发明的电子封装单元与其制造方法、电子装置中,通过将绝缘基板上的多个次矩阵电路和功能晶片封装在一起,并利用导电材料使功能晶片经由这些次矩阵电路及导电材料电性连接至绝缘基板的第二表面,由此可以达成利用同一种薄膜晶体管基板(电子封装单元)共享于许多不同电子装置的目的。因此,本发明不需针对每一种电子装置的产品尺寸或功能设计薄膜工艺,除了可以节省昂贵的薄膜晶体管工艺/掩膜/基板/材料的费用而使成本较低外,更具有应用上的弹性而可适用于变化多样的产品需求。
以上所述仅为举例性,而非为限制性。任何未脱离本发明的精神与范畴,而对其进行的等效修改或变更,均应包含于随附的权利要求范围中。
Claims (19)
1.一种电子封装单元的制造方法,包括:
提供绝缘基板,其中所述绝缘基板具有相对的第一表面与第二表面;
形成多个次矩阵电路于所述绝缘基板上,各所述次矩阵电路包含至少一个薄膜晶体管;
设置至少一个功能晶片于所述绝缘基板的所述第一表面上,其中所述功能晶片与所述次矩阵电路电性连接;
形成多个通孔于所述绝缘基板并将至少一种导电材料设置于所述多个通孔,使所述功能晶片经由所述次矩阵电路及所述导电材料电性连接至所述第二表面;
设置保护层于所述绝缘基板的所述第一表面并覆盖所述功能晶片;以及
切割所述绝缘基板及所述保护层,以形成多个所述电子封装单元。
2.如权利要求1所述的制造方法,其中在形成所述通孔的步骤中,通过激光照射所述绝缘基板,以在所述绝缘基板上形成所述通孔。
3.如权利要求1所述的制造方法,其中设置所述导电材料是由所述第二表面对所述通孔进行表面处理,以在所述通孔内形成导电层。
4.如权利要求1所述的制造方法,其中各所述次矩阵电路还包括至少一个扫描线与至少一个数据线,所述薄膜晶体管与所述扫描线及所述数据线电性连接。
5.如权利要求1所述的制造方法,其中所述功能晶片包含光电晶片、热电晶片、压电晶片、或感测晶片。
6.如权利要求1所述的制造方法,还包括:
电性连接所述导电材料至驱动电路板,所述驱动电路板包含至少一个驱动晶片。
7.如权利要求6所述的制造方法,其中所述导电材料是利用表面贴装技术或利用异方性导电膏贴附以电性连接至所述驱动电路板。
8.如权利要求1所述的制造方法,其中所述绝缘基板的材质包含玻璃、树脂、或陶瓷。
9.一种电子封装单元,其搭配驱动电路板,所述电子封装单元包括:
绝缘基板,具有多个通孔及相对的第一表面和第二表面;
次矩阵电路,设置于所述绝缘基板上,所述次矩阵电路包括至少一个薄膜晶体管;
至少一个功能晶片,设置于所述第一表面,所述功能晶片经由所述次矩阵电路及所述通孔与所述驱动电路板电性连接;以及
保护层,设置于所述绝缘基板的所述第一表面并覆盖所述功能晶片。
10.如权利要求9所述的电子封装单元,其中所述绝缘基板的厚度小于50微米,所述薄膜晶体管的厚度小于20微米。
11.如权利要求9所述的电子封装单元,其中所述绝缘基板的材质包含玻璃、树脂、或陶瓷。
12.如权利要求9所述的电子封装单元,其中所述次矩阵电路还包括至少一个扫描线与至少一个数据线,所述薄膜晶体管与所述扫描线及所述数据线电性连接。
13.如权利要求9所述的电子封装单元,其包括多个功能晶片,其中,与所述多个功能晶片电性连接的所述多个次矩阵电路形成矩阵电路。
14.如权利要求9所述的电子封装单元,其中多个电子封装单元的所述多个次矩阵电路组合形成矩阵电路。
15.如权利要求13或14所述的电子封装单元,其中所述驱动电路板包含至少一个连接电路,所述连接电路包含多个连接垫及多个导线,所述多个连接垫与所述多个导线串接所述多个次矩阵电路。
16.如权利要求15所述的电子封装单元,其中所述驱动电路板还包含至少一个驱动晶片,所述驱动晶片经由所述连接电路电性连接所述电子封装单元的所述次矩阵电路。
17.如权利要求9所述的电子封装单元,其中所述功能晶片包含光电晶片、热电晶片、压电晶片、或感测晶片。
18.如权利要求9所述的电子封装单元,其边长大于50微米。
19.一种电子装置,包括:
多个电子封装单元,各所述电子封装单元包含:
绝缘基板,具有多个通孔及相对的第一表面和第二表面,
至少一个次矩阵电路,设置于所述绝缘基板上,所述次矩阵电路包括
至少一个薄膜晶体管;
至少一个功能晶片,设置于所述绝缘基板的所述第一表面;及
保护层,设置于所述绝缘基板的所述第一表面并覆盖所述功能晶片;以及
驱动电路板,面对于所述绝缘基板的所述第二表面,所述功能晶片经由所述次矩阵电路及所述通孔与所述驱动电路板电性连接。
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