JPS558061A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS558061A
JPS558061A JP8074778A JP8074778A JPS558061A JP S558061 A JPS558061 A JP S558061A JP 8074778 A JP8074778 A JP 8074778A JP 8074778 A JP8074778 A JP 8074778A JP S558061 A JPS558061 A JP S558061A
Authority
JP
Japan
Prior art keywords
wiring
metal
melting point
employing
high melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8074778A
Other languages
Japanese (ja)
Inventor
Toshiaki Ogata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP8074778A priority Critical patent/JPS558061A/en
Publication of JPS558061A publication Critical patent/JPS558061A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: For increasing elements in density, to make an IC employing the wiring of a high melting point metal such as Mo and W, of a double layer film of the metal employing the bonding pads or wiring of Al or Al-Si, and Al-Si.
CONSTITUTION: A first layer wiring including a gate wiring 8 and a second layer wiring including the lead-out wire from source and drain diffusion ranges are made of high melting point metals such as Mo and W. The bonding pad to be deposited on said wiring layers is a two-layer film of Al, Al-Si or the same kind of metal as used for said wiring layers, an Al-Si. Thereby, pierce-through does which occurs frequently when Al wiring is adopted does not occur so that diffusion range is not required to be provided deep, and integration degree is increased.
COPYRIGHT: (C)1980,JPO&Japio
JP8074778A 1978-07-03 1978-07-03 Semiconductor integrated circuit Pending JPS558061A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8074778A JPS558061A (en) 1978-07-03 1978-07-03 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8074778A JPS558061A (en) 1978-07-03 1978-07-03 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS558061A true JPS558061A (en) 1980-01-21

Family

ID=13726988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8074778A Pending JPS558061A (en) 1978-07-03 1978-07-03 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS558061A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150076551A1 (en) * 2012-06-07 2015-03-19 Michael A. Tischler Methods of fabricating wafer-level flip chip device packages
US9054290B2 (en) 2010-06-29 2015-06-09 Cooledge Lighting Inc. Electronic devices with yielding substrates
US9107272B2 (en) 2010-01-04 2015-08-11 Cooledge Lighting Inc. Failure mitigation in arrays of light-emitting devices
US9179510B2 (en) 2009-06-27 2015-11-03 Cooledge Lighting Inc. High efficiency LEDs and LED lamps

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9179510B2 (en) 2009-06-27 2015-11-03 Cooledge Lighting Inc. High efficiency LEDs and LED lamps
US9107272B2 (en) 2010-01-04 2015-08-11 Cooledge Lighting Inc. Failure mitigation in arrays of light-emitting devices
US9054290B2 (en) 2010-06-29 2015-06-09 Cooledge Lighting Inc. Electronic devices with yielding substrates
US9252373B2 (en) 2010-06-29 2016-02-02 Cooledge Lighting, Inc. Electronic devices with yielding substrates
US9426860B2 (en) 2010-06-29 2016-08-23 Cooledge Lighting, Inc. Electronic devices with yielding substrates
US20150076551A1 (en) * 2012-06-07 2015-03-19 Michael A. Tischler Methods of fabricating wafer-level flip chip device packages
US9214615B2 (en) * 2012-06-07 2015-12-15 Cooledge Lighting Inc. Methods of fabricating wafer-level flip chip device packages
US9231178B2 (en) 2012-06-07 2016-01-05 Cooledge Lighting, Inc. Wafer-level flip chip device packages and related methods

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