JP6236202B2 - ナノ構造の分散のための官能基を有するマトリックス - Google Patents

ナノ構造の分散のための官能基を有するマトリックス Download PDF

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JP6236202B2
JP6236202B2 JP2012508486A JP2012508486A JP6236202B2 JP 6236202 B2 JP6236202 B2 JP 6236202B2 JP 2012508486 A JP2012508486 A JP 2012508486A JP 2012508486 A JP2012508486 A JP 2012508486A JP 6236202 B2 JP6236202 B2 JP 6236202B2
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ligand
nanocrystals
polymer
composition
amine moiety
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JP2012525467A (ja
JP2012525467A5 (enExample
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ミンジュン・リウ
ロバート・ダブロー
ウィリアム・ピー・フリーマン
エイドリアン・カクマ
ウォラス・ジェイ・パース
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ナノシス・インク．
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    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/082—Other phosphides of boron, aluminium, gallium or indium
    • C01B25/087—Other phosphides of boron, aluminium, gallium or indium of gallium or indium
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    • B82—NANOTECHNOLOGY
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    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
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    • C07D407/12—Heterocyclic compounds containing two or more hetero rings, at least one ring having oxygen atoms as the only ring hetero atoms, not provided for by group C07D405/00 containing two hetero rings linked by a chain containing hetero atoms as chain links
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    • C09K11/881—Chalcogenides
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JP2012508486A 2009-05-01 2010-04-29 ナノ構造の分散のための官能基を有するマトリックス Active JP6236202B2 (ja)

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US21505409P 2009-05-01 2009-05-01
US61/215,054 2009-05-01
PCT/US2010/001283 WO2010126606A2 (en) 2009-05-01 2010-04-29 Functionalized matrixes for dispersion of nanostructures

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JP2012525467A JP2012525467A (ja) 2012-10-22
JP2012525467A5 JP2012525467A5 (enExample) 2013-06-13
JP6236202B2 true JP6236202B2 (ja) 2017-11-22

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US (4) US8283412B2 (enExample)
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JP (2) JP6236202B2 (enExample)
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Families Citing this family (158)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8212469B2 (en) 2010-02-01 2012-07-03 Abl Ip Holding Llc Lamp using solid state source and doped semiconductor nanophosphor
CN102106009B (zh) * 2008-07-03 2013-07-24 三星电子株式会社 波长转换发光二极管芯片和具有该芯片的发光二极管装置
US8679470B2 (en) 2008-11-28 2014-03-25 Luromed Llc Composition using cross-linked hyaluronic acid for topical cosmetic and therapeutic applications
US8343575B2 (en) 2008-12-30 2013-01-01 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
US11198270B2 (en) 2008-12-30 2021-12-14 Nanosys, Inc. Quantum dot films, lighting devices, and lighting methods
US10214686B2 (en) 2008-12-30 2019-02-26 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
US8247390B2 (en) * 2009-09-28 2012-08-21 Luromed Llc Modified hydrophilic polymers containing hydrophobic groups
US20110127555A1 (en) * 2009-12-02 2011-06-02 Renaissance Lighting, Inc. Solid state light emitter with phosphors dispersed in a liquid or gas for producing high cri white light
US8217406B2 (en) 2009-12-02 2012-07-10 Abl Ip Holding Llc Solid state light emitter with pumped nanophosphors for producing high CRI white light
US9719012B2 (en) * 2010-02-01 2017-08-01 Abl Ip Holding Llc Tubular lighting products using solid state source and semiconductor nanophosphor, E.G. for florescent tube replacement
US8517550B2 (en) 2010-02-15 2013-08-27 Abl Ip Holding Llc Phosphor-centric control of color of light
DE102010034913B4 (de) * 2010-08-20 2023-03-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlung emittierendes Bauelement und Verfahren zur Herstellung des Strahlung emittierenden Bauelements
KR20200039806A (ko) 2010-11-10 2020-04-16 나노시스, 인크. 양자 도트 필름들, 조명 디바이스들, 및 조명 방법들
US8932898B2 (en) 2011-01-14 2015-01-13 The Board Of Trustees Of The Leland Stanford Junior Univerity Deposition and post-processing techniques for transparent conductive films
KR20120097697A (ko) * 2011-02-25 2012-09-05 삼성전자주식회사 발광 다이오드
US8697129B2 (en) * 2011-03-02 2014-04-15 Imra America, Inc. Stable colloidal gold nanoparticles with controllable surface modification and functionalization
WO2012177793A1 (en) * 2011-06-20 2012-12-27 Crystalplex Corporation Quantum dot containing light module
JP6134988B2 (ja) 2011-07-29 2017-05-31 コーニング インコーポレイテッド 太陽光赤方偏移システム
CN102916095A (zh) * 2011-07-31 2013-02-06 华新丽华股份有限公司 发光二极管
US20130112942A1 (en) 2011-11-09 2013-05-09 Juanita Kurtin Composite having semiconductor structures embedded in a matrix
US9159872B2 (en) 2011-11-09 2015-10-13 Pacific Light Technologies Corp. Semiconductor structure having nanocrystalline core and nanocrystalline shell
WO2013078247A1 (en) * 2011-11-22 2013-05-30 Qd Vision, Inc. Methods of coating semiconductor nanocrystals, semiconductor nanocrystals, and products including same
US10008631B2 (en) 2011-11-22 2018-06-26 Samsung Electronics Co., Ltd. Coated semiconductor nanocrystals and products including same
CN104105739B (zh) * 2012-02-03 2016-08-17 皇家飞利浦有限公司 具有高量子效率和稳定性的在基质中分散纳米颗粒的新材料和方法
DE102012203036A1 (de) * 2012-02-28 2013-08-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Lumineszierende, cadmiumfreie Kern-Multischalen-Quantenpunkte auf Basis von Indiumphosphid
CN102683369A (zh) * 2012-04-20 2012-09-19 广东普加福光电科技有限公司 用于增强硅基成像器件对紫外响应的量子点光转换膜的制备方法和用途
US9139770B2 (en) * 2012-06-22 2015-09-22 Nanosys, Inc. Silicone ligands for stabilizing quantum dot films
TWI596188B (zh) * 2012-07-02 2017-08-21 奈米系統股份有限公司 高度發光奈米結構及其製造方法
US10287490B2 (en) 2012-10-25 2019-05-14 Lumileds Llc PDMS-based ligands for quantum dots in silicones
CN104755585A (zh) * 2012-10-25 2015-07-01 皇家飞利浦有限公司 用于硅酮中的量子点的基于pdms的配体
US10439090B2 (en) * 2012-11-09 2019-10-08 Board Of Trustees Of Michigan State University Transparent luminescent solar concentrators for integrated solar windows
US8889457B2 (en) * 2012-12-13 2014-11-18 Pacific Light Technologies Corp. Composition having dispersion of nano-particles therein and methods of fabricating same
US20140170786A1 (en) * 2012-12-13 2014-06-19 Juanita N. Kurtin Ceramic composition having dispersion of nano-particles therein and methods of fabricating same
US9680072B2 (en) 2013-03-05 2017-06-13 Pacific Light Technologies Corp. Quantum dot (QD) delivery method
US10202543B2 (en) * 2013-03-05 2019-02-12 Osram Opto Semiconductors Gmbh Quantum dot (QD) delivery method
WO2014159936A1 (en) * 2013-03-14 2014-10-02 Nanosys, Inc. Polyhedral oligomeric silsesquioxane nanocrystal stabilization ligands
EP2970764B1 (en) * 2013-03-14 2018-03-07 Nanosys, Inc. Method for solventless quantum dot exchange
WO2014179746A1 (en) * 2013-05-02 2014-11-06 Voxtel, Inc. Inks for 3d printing gradient refractive index (grin) optical components
US9923132B2 (en) * 2013-05-24 2018-03-20 Cree, Inc. Solid state lighting component package with conformal reflective coating
WO2015002326A1 (en) 2013-07-05 2015-01-08 Nitto Denko Corporation Photocatalyst sheet
KR102294252B1 (ko) 2013-10-17 2021-08-25 나노시스, 인크. 발광 다이오드 (led) 디바이스들
TWI535792B (zh) * 2013-10-24 2016-06-01 瓦克化學公司 Led封裝材料
US9927649B2 (en) 2013-11-05 2018-03-27 Nanosys, Inc. Backlight unit for display devices
WO2015094646A1 (en) 2013-12-17 2015-06-25 3M Innovative Properties Company Composite nanoparticles including a phthalic acid derivative
CN105814169B (zh) 2013-12-17 2018-05-25 3M创新有限公司 包含丙二酸衍生物的复合纳米粒子
JP6171927B2 (ja) * 2013-12-25 2017-08-02 Jsr株式会社 感放射線性樹脂組成物、硬化膜、発光素子および発光層の形成方法
US20160333268A1 (en) * 2014-01-17 2016-11-17 Pacific Light Technologies Corp. Irregular Large Volume Semiconductor Coatings for Quantum Dots (QDs)
US9825205B2 (en) * 2014-01-17 2017-11-21 Pacific Light Technologies Corp. Quantum dot (QD) polymer composites for on-chip light emitting diode (LED) applications
KR20160132903A (ko) 2014-03-10 2016-11-21 쓰리엠 이노베이티브 프로퍼티즈 캄파니 티올-치환된 실리콘을 포함하는 복합 나노입자
KR102056786B1 (ko) * 2014-03-18 2020-01-22 나노코 테크놀로지스 리미티드 양자점 조성물
KR101821086B1 (ko) 2014-04-02 2018-01-22 쓰리엠 이노베이티브 프로퍼티즈 캄파니 티오에테르 리간드를 포함하는 복합 나노입자
US9790425B2 (en) 2014-04-18 2017-10-17 Los Alamos National Security, Llc Synthesis of quantum dots
US9442344B2 (en) * 2014-06-02 2016-09-13 Vadient Optics, Llc Nanocomposite high order nonlinear optical-element
US10828400B2 (en) 2014-06-10 2020-11-10 The Research Foundation For The State University Of New York Low temperature, nanostructured ceramic coatings
US10167417B2 (en) 2014-07-03 2019-01-01 3M Innovative Properties Company Quantum dot article with reduced edge ingress and improved color stability
KR102515685B1 (ko) * 2014-07-16 2023-03-30 나노시스, 인크. 양자점용 실리콘 리간드
US10756241B2 (en) 2014-07-22 2020-08-25 Lumileds Llc Siloxane ligands to be used for dispersing quantum dots in silicone hosts to obtain color converters for LED lighting
US20170218264A1 (en) * 2014-10-13 2017-08-03 Los Alamos National Security, Llc Luminescent solar concentrators comprising semiconductor nanocrystals
CA2961291A1 (en) * 2014-10-29 2016-05-06 Arisdyne Systems, Inc. Process for dispersing particles in filled resin compositions
JP6309472B2 (ja) 2015-02-06 2018-04-11 富士フイルム株式会社 重合性組成物、波長変換部材、バックライトユニット、および液晶表示装置
JP6589318B2 (ja) * 2015-03-23 2019-10-16 コニカミノルタ株式会社 色域拡大フィルム
EP3283561A1 (en) 2015-04-16 2018-02-21 3M Innovative Properties Company Quantum dot article with thiol-alkene-epoxy matrix
WO2016167927A1 (en) 2015-04-16 2016-10-20 3M Innovative Properties Company Quantum dot article with thiol-epoxy matrix
US10984735B2 (en) 2015-04-17 2021-04-20 Nanosys, Inc. White point uniformity in display devices
WO2016189869A1 (ja) * 2015-05-28 2016-12-01 富士フイルム株式会社 量子ドット含有組成物、波長変換部材、バックライトユニット、および液晶表示装置
US20160380140A1 (en) 2015-06-26 2016-12-29 Los Alamos National Security, Llc Colorless luminescent solar concentrators using colloidal semiconductor nanocrystals
ES3042071T3 (en) * 2015-07-20 2025-11-18 Momentive Performance Mat Gmbh Asymmetrically substituted polyorganosiloxane derivatives
CN107922832B (zh) 2015-08-19 2021-05-25 3M创新有限公司 全氟醚稳定化量子点
WO2017044597A1 (en) 2015-09-09 2017-03-16 Truskier Jonathan Highly luminescent cadmium-free nanocrystals with blue emission
JP2018529832A (ja) 2015-09-15 2018-10-11 スリーエム イノベイティブ プロパティズ カンパニー 添加剤安定化複合ナノ粒子
JP2018529811A (ja) 2015-09-15 2018-10-11 スリーエム イノベイティブ プロパティズ カンパニー 添加剤安定化複合ナノ粒子
JP6602170B2 (ja) * 2015-11-16 2019-11-06 日本化薬株式会社 多価カルボン酸樹脂およびそれを含有する多価カルボン酸樹脂組成物、エポキシ樹脂組成物、熱硬化性樹脂組成物、それらの硬化物並びに半導体装置
WO2017087170A1 (en) 2015-11-18 2017-05-26 3M Innovative Properties Company Copolymeric stabilizing carrier fluid for nanoparticles
DE102015121720A1 (de) * 2015-12-14 2017-06-14 Osram Opto Semiconductors Gmbh Konversionselement, optoelektronisches Bauelement und Verfahren zur Herstellung eines Konversionselements
KR102427698B1 (ko) 2015-12-17 2022-07-29 삼성전자주식회사 양자점-폴리머 미분 복합체, 그의 제조 방법 및 이를 포함하는 성형품과 전자 소자
KR20180091933A (ko) 2015-12-31 2018-08-16 쓰리엠 이노베이티브 프로퍼티즈 컴파니 양자점을 갖는 입자를 포함하는 물품
US9658489B1 (en) 2015-12-31 2017-05-23 Nanosys, Inc. Backlight units for display devices
WO2017127302A1 (en) 2016-01-19 2017-07-27 Nanosys, Inc. Inp quantum dots with gap and alp shells and method of producing the same
CN110143579B (zh) * 2016-02-03 2022-07-29 苏州星烁纳米科技有限公司 一种纳米晶体的制备方法
WO2017142781A1 (en) 2016-02-17 2017-08-24 3M Innovative Properties Company Matrix for quantum dot film article
US10899961B2 (en) 2016-02-17 2021-01-26 3M Innovative Properties Company Quantum dots with stabilizing fluorochemical copolymers
CA3015622A1 (en) * 2016-02-26 2017-08-31 Nanosys, Inc. Low cadmium content nanostructure compositions and uses thereof
WO2017172462A1 (en) 2016-04-01 2017-10-05 3M Innovative Properties Company Quantum dots with stabilizing fluorochemical agents
AU2017255530A1 (en) 2016-04-26 2018-11-22 Nanosys, Inc. Stable InP quantum dots with thick shell coating and method of producing the same
EP3242333B1 (en) * 2016-05-03 2020-09-09 Nokia Technologies Oy An apparatus and method of forming an apparatus comprising a graphene field effect transistor
EP3244442B1 (en) * 2016-05-09 2022-08-03 Emberion Oy A method of forming a device comprising quantum dots
AU2017267735B2 (en) 2016-05-19 2021-11-04 Shoei Chemical Inc. Method to improve the morphology of core/shell quantum dots for highly luminescent nanostructures
KR20190009763A (ko) 2016-05-20 2019-01-29 쓰리엠 이노베이티브 프로퍼티즈 컴파니 혼합 아민 및 티올 리간드를 갖는 양자점
CA3026102A1 (en) 2016-06-06 2017-12-14 Nanosys, Inc. Method for synthesizing core shell nanocrystals at high temperatures
WO2018005195A1 (en) 2016-06-27 2018-01-04 Nanosys, Inc. Methods for buffered coating of nanostructures
CN109476986B (zh) 2016-07-20 2022-07-01 3M创新有限公司 用于量子点的稳定苯乙烯聚合物
WO2018017513A1 (en) 2016-07-20 2018-01-25 3M Innovative Properties Company Stabilizing styrenic polymer for quantum dots
KR102151510B1 (ko) 2016-07-20 2020-09-03 후지필름 가부시키가이샤 양자 도트 함유 조성물, 파장 변환 부재, 백라이트 유닛, 및 액정 표시 장치
US20190218453A1 (en) 2016-09-19 2019-07-18 3M Innovative Properties Company Fluorescent nanoparticles stabilized with a functional aminosilicone
DE102016117885A1 (de) * 2016-09-22 2018-04-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Auskoppelelements für ein optoelektronisches Bauelement und Auskoppelelement
US11320577B2 (en) 2016-10-31 2022-05-03 Nanosys, Inc. Radiation absorbing element for increasing color gamut of quantum dot based display devices
WO2018144548A1 (en) * 2017-01-31 2018-08-09 Nanosys, Inc. Rapid thickening of aminosilicones to promote emulsion stability and adhesion of uv-curable quantum dot enhancement film emulsions
US10472563B2 (en) 2017-02-16 2019-11-12 Rohm And Haas Electronic Materials Llc Methods for making improved quantum dot resin formulations
US10508232B2 (en) 2017-02-16 2019-12-17 Dow Global Technologies Llc Polymer composites and films comprising reactive additives having thiol groups for improved quantum dot dispersion and barrier properties
TW201842164A (zh) 2017-03-14 2018-12-01 美商3M新設資產公司 經添加劑穩定之複合奈米粒子
JP6709328B2 (ja) 2017-03-28 2020-06-10 富士フイルム株式会社 Ｉｉｉ−ｖ族半導体ナノ粒子の製造方法、ｉｉｉ−ｖ族半導体量子ドットの製造方法、及びフロー式反応システム
CN110915001B (zh) * 2017-05-09 2023-05-02 优比库德股份有限公司 用于农业应用的发光光学元件
WO2018209007A1 (en) * 2017-05-10 2018-11-15 Nanosys, Inc. In-situ cross-linking of emulsified quantum dot-containing domains within a carrier resin
CN110799621A (zh) * 2017-05-10 2020-02-14 纳米系统公司 作为量子点树脂预混料的乳化添加剂的有机硅共聚物
KR102452484B1 (ko) * 2017-08-11 2022-10-11 삼성전자주식회사 발광소자 패키지 및 발광소자 패키지 모듈
US10935842B2 (en) 2017-08-25 2021-03-02 Nanosys, Inc. Nanostructure based display devices
US11029559B2 (en) 2017-08-25 2021-06-08 Nanosys, Inc. Nanostructure based display devices
US11092850B2 (en) 2017-08-25 2021-08-17 Nanosys, Inc. Using multiple excitation wavelengths in nanostructure based display devices
WO2019081404A1 (en) * 2017-10-24 2019-05-02 Merck Patent Gmbh QUANTIC POINTS BASED ON INDIUM PHOSPHIDE
TW201923027A (zh) 2017-10-25 2019-06-16 美商納諾西斯有限公司 具有厚外殼塗層的穩定磷化銦量子點及其製備方法
KR102515817B1 (ko) 2017-11-28 2023-03-29 엘지디스플레이 주식회사 발광체, 이를 포함하는 발광 필름, 발광다이오드 및 발광장치
JP6959119B2 (ja) * 2017-12-04 2021-11-02 信越化学工業株式会社 量子ドット及びその製造方法、並びに樹脂組成物、波長変換材料、発光素子
JP7277146B2 (ja) * 2018-01-11 2023-05-18 三星電子株式会社 カドミウムフリー系量子ドット、その製造方法、これを含む組成物と複合体、及び表示素子
KR102713384B1 (ko) 2018-01-11 2024-10-08 삼성전자주식회사 양자점 집단과 이를 포함하는 조성물
WO2019173259A1 (en) 2018-03-05 2019-09-12 Nanosys, Inc. Decreased photon reabsorption in emissive quantum dots
US12247126B2 (en) 2018-05-09 2025-03-11 Board Of Trustees Of Michigan State University Near-infrared harvesting transparent luminescent solar concentrators with engineered stokes shift
CN113039256B (zh) 2018-05-30 2024-09-13 昭荣化学工业株式会社 发蓝光ZnSe1-xTex合金纳米晶体的合成方法
KR102769403B1 (ko) 2018-06-29 2025-02-17 소에이 가가쿠 고교 가부시키가이샤 도펀트들로서 In3+ 염들을 이용한 ZnSe 양자 도트들의 파장 튜닝
EP3824218A1 (en) 2018-07-24 2021-05-26 Nanosys, Inc. Methods of improving efficiency of displays using quantum dots with integrated optical elements
US11428988B2 (en) * 2018-08-31 2022-08-30 Nanosys, Inc. Increasing color gamut performance and efficiency in quantum dot color conversion layers
WO2020048527A1 (zh) * 2018-09-07 2020-03-12 Tcl集团股份有限公司 一种复合材料与量子点发光二极管
CN112111277A (zh) * 2018-10-18 2020-12-22 浙江大学 单光子源和qled
EP3643765A1 (en) 2018-10-22 2020-04-29 SABIC Global Technologies B.V. Stable quantum dot compositions
CN109735203B (zh) * 2018-12-25 2021-01-29 陕西科技大学 一种半封闭笼状三官能环氧醚基poss组合料、涂料及制备方法
CN109825279A (zh) * 2019-01-10 2019-05-31 苏州星烁纳米科技有限公司 荧光体、光转换元件及发光器件
KR102046907B1 (ko) 2019-01-16 2019-11-20 주식회사 신아티앤씨 이온성 액체가 이온결합된 양자점 및 이의 제조방법
CN113330095B (zh) 2019-01-24 2024-08-20 昭荣化学工业株式会社 用于增强蓝光吸收的薄壳量子点
KR20210116633A (ko) 2019-01-24 2021-09-27 나노시스, 인크. 증가된 양자 수율을 위한 양자 도트들의 소분자 패시베이션
TWI827791B (zh) 2019-02-05 2024-01-01 日商昭榮化學工業股份有限公司 以熔融鹽化學合成無機奈米結構之方法、奈米結構及包含該奈米結構之顯示裝置
JP7297460B2 (ja) * 2019-02-20 2023-06-26 旭化成株式会社 紫外線照射装置
JP7185071B2 (ja) * 2019-04-03 2022-12-06 カンブリオス フィルム ソリューションズ コーポレーション 薄型導電性フィルム
KR20210152535A (ko) 2019-04-15 2021-12-15 나노시스, 인크. 인듐 포스파이드 양자 도트들의 양자 수율을 개선하기 위한 방법들
EP3928361A1 (en) 2019-04-19 2021-12-29 Nanosys, Inc. Flexible electroluminescent devices
KR102792752B1 (ko) 2019-05-08 2025-04-07 소에이 가가쿠 고교 가부시키가이샤 광 추출 효율이 개선된 나노구조체 기반 디스플레이 디바이스들
KR102687815B1 (ko) * 2019-06-20 2024-07-24 엘지전자 주식회사 디스플레이 장치 및 반도체 발광소자의 자가조립 방법
US11970646B2 (en) 2019-06-20 2024-04-30 Shoei Chemical Inc. Bright silver based quaternary nanostructures
US11499097B2 (en) 2019-08-12 2022-11-15 Nanosys, Inc. Synthesis of blue-emitting ZnSe1-xTex alloy nanocrystals with low full width at half-maximum
WO2021050641A1 (en) 2019-09-11 2021-03-18 Nanosys, Inc. Nanostructure ink compositions for inkjet printing
US11670740B2 (en) * 2019-09-26 2023-06-06 Osram Opto Semiconductors Gmbh Conversion layer, light emitting device and method of producing a conversion layer
KR102736147B1 (ko) 2019-10-17 2024-11-28 삼성전자주식회사 양자점, 및 이를 포함하는 전자 소자
JP7227890B2 (ja) * 2019-12-03 2023-02-22 信越化学工業株式会社 感光性樹脂組成物、感光性樹脂皮膜、感光性ドライフィルム、パターン形成方法及び発光素子
WO2021141945A1 (en) 2020-01-06 2021-07-15 Nanosys, Inc. Rohs compliant mixed quantum dot films
KR102862549B1 (ko) * 2020-01-10 2025-09-22 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 디스플레이 장치
KR20220144386A (ko) * 2020-02-21 2022-10-26 넥스닷 디스플레이용 블루 필터
WO2022011140A1 (en) 2020-07-08 2022-01-13 Nanosys, Inc. Method of improving performance of devices with qds comprising thin metal oxide coatings
KR20230074177A (ko) 2020-09-28 2023-05-26 나노시스, 인크. 펜던트 가용화 모이어티를 갖는 열적으로 안정된 폴리티올 리간드
JP2023551765A (ja) 2020-10-22 2023-12-13 ナノシス・インク． 有機輸送層を持つ電界発光デバイス
WO2022087245A1 (en) 2020-10-22 2022-04-28 Nanosys, Inc. Electroluminescent devices with hybrid transport layers
CN116981754B (zh) 2020-12-22 2025-11-04 昭荣化学工业株式会社 包含亮银基四元纳米结构的膜
JP2024516785A (ja) 2021-04-01 2024-04-17 ナノシス・インク． 安定なａｉｇｓ膜
WO2023287886A1 (en) 2021-07-13 2023-01-19 Nanosys, Inc. Tunable illumination device
EP4124901A1 (en) * 2021-07-29 2023-02-01 Nexdot Contact lens comprising semi-conductive nanoparticles
WO2023119960A1 (ja) * 2021-12-23 2023-06-29 パナソニックＩｐマネジメント株式会社 半導体ナノ粒子の製造方法及び半導体ナノ粒子
CN118591770A (zh) 2022-01-19 2024-09-03 昭荣化学工业株式会社 Uv固化性量子点配制物
CN119173609A (zh) 2022-03-25 2024-12-20 昭荣化学工业株式会社 包含纳米结构体的二氧化硅复合微粒
WO2023220050A1 (en) 2022-05-09 2023-11-16 Nanosys, Inc. Microled-based display device and method of manufacturing same
US12145890B2 (en) 2022-12-16 2024-11-19 Raytheon Company Coated (core-shell) nanoparticles for nanocomposite optical ceramics
DE102023134624A1 (de) * 2023-12-11 2025-06-12 Ams-Osram International Gmbh Filterelement, optoelektronisches bauelement, verfahren zur herstellung eines filterelements und verfahren zur herstellung eines optoelektronischen bauelements

Family Cites Families (123)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2381366A (en) 1942-10-29 1945-08-07 Gen Electric Organo-dihalogenosiloxanes
US3627724A (en) * 1969-12-03 1971-12-14 Cabot Corp Rubber compositions
DE2448338C3 (de) 1974-10-10 1978-10-26 Bayer Ag, 5090 Leverkusen Stabilisierte Chalkogenide auf der Basis von Cadmium
US4181753A (en) 1976-08-19 1980-01-01 Brown, Boveri & Cie Aktiengesellschaft Process for the production of electroluminescent powders for display panels and coating the powders with zinc phosphate
JPS5467698A (en) 1977-11-08 1979-05-31 Matsushita Electric Ind Co Ltd Method of reducing resistance of conductive material
US4130708A (en) * 1977-12-09 1978-12-19 Ppg Industries, Inc. Siloxane urethane acrylate radiation curable compounds for use in coating compositions
US4263339A (en) 1978-05-17 1981-04-21 Brown, Boveri & Cie Aktiengesellschaft Process for the production of electroluminescent powders for display panels
US4426431A (en) * 1982-09-22 1984-01-17 Eastman Kodak Company Radiation-curable compositions for restorative and/or protective treatment of photographic elements
US5189337A (en) 1988-09-09 1993-02-23 Hitachi, Ltd. Ultrafine particles for use in a cathode ray tube or an image display face plate
JP2525656B2 (ja) 1988-12-08 1996-08-21 化成オプトニクス株式会社 蛍光体および蛍光体の表面処理方法
US5023139A (en) 1989-04-04 1991-06-11 Research Corporation Technologies, Inc. Nonlinear optical materials
US5196229A (en) 1989-08-21 1993-03-23 Gte Products Corporation Coated phosphor articles
JPH075883B2 (ja) 1990-04-21 1995-01-25 日亜化学工業株式会社 蛍光体の再生方法
US5376307A (en) 1990-08-09 1994-12-27 E. I. Du Pont De Nemours And Company Fluorocarbon paint composition
US5124278A (en) 1990-09-21 1992-06-23 Air Products And Chemicals, Inc. Amino replacements for arsine, antimony and phosphine
US5230957A (en) 1991-07-24 1993-07-27 E. I. Du Pont De Nemours And Company Hollow filament cross-sections containing four continuous voids
US5505928A (en) 1991-11-22 1996-04-09 The Regents Of University Of California Preparation of III-V semiconductor nanocrystals
US5262357A (en) 1991-11-22 1993-11-16 The Regents Of The University Of California Low temperature thin films formed from nanocrystal precursors
EP0613585A4 (en) 1991-11-22 1995-06-21 Univ California SEMICONDUCTING NANOCRYSTALS CONNECTED TO SOLID INORGANIC SURFACES BY SELF-ASSEMBLED SINGLE LAYERS.
US5260957A (en) 1992-10-29 1993-11-09 The Charles Stark Draper Laboratory, Inc. Quantum dot Laser
CA2148000C (en) * 1992-10-30 2000-10-10 Keith D. Weiss Thixotropic magnetorheological materials
US5518808A (en) 1992-12-18 1996-05-21 E. I. Du Pont De Nemours And Company Luminescent materials prepared by coating luminescent compositions onto substrate particles
JP2959928B2 (ja) 1993-06-23 1999-10-06 チタン工業株式会社 白色導電性樹脂組成物
US5537000A (en) 1994-04-29 1996-07-16 The Regents, University Of California Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices
DE4432035A1 (de) 1994-09-09 1996-03-14 Philips Patentverwaltung Beschichtungsverfahren für Lumineszenzpulver, Luminenzenzpulver und beschichteter Gegenstand
AU3894595A (en) 1994-11-08 1996-05-31 Spectra Science Corporation Semiconductor nanocrystal display materials and display apparatus employing same
US5532023A (en) * 1994-11-10 1996-07-02 The Procter & Gamble Company Wrinkle reducing composition
US5595593A (en) * 1995-10-12 1997-01-21 Dow Corning Corporation Treatment of fillers with oxa-silacycloalkanes
US5707139A (en) 1995-11-01 1998-01-13 Hewlett-Packard Company Vertical cavity surface emitting laser arrays for illumination
US5777433A (en) 1996-07-11 1998-07-07 Hewlett-Packard Company High refractive index package material and a light emitting device encapsulated with such material
US6153123A (en) 1997-02-24 2000-11-28 Superior Micropowders, Llc Sulfur-containing phosphor powders, methods for making phosphor powders and devices incorporating same
EP0907970B1 (de) 1997-03-03 2007-11-07 Koninklijke Philips Electronics N.V. Weisse lumineszenzdiode
US5958591A (en) 1997-06-30 1999-09-28 Minnesota Mining And Manufacturing Company Electroluminescent phosphor particles encapsulated with an aluminum oxide based multiple oxide coating
US6482672B1 (en) 1997-11-06 2002-11-19 Essential Research, Inc. Using a critical composition grading technique to deposit InGaAs epitaxial layers on InP substrates
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US6607829B1 (en) 1997-11-13 2003-08-19 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
US5985173A (en) 1997-11-18 1999-11-16 Gray; Henry F. Phosphors having a semiconductor host surrounded by a shell
GB9724642D0 (en) 1997-11-21 1998-01-21 British Tech Group Single electron devices
US5990479A (en) 1997-11-25 1999-11-23 Regents Of The University Of California Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes
US6147363A (en) 1997-12-25 2000-11-14 Showa Denko K.K. Nitride semiconductor light-emitting device and manufacturing method of the same
US5892084A (en) * 1998-02-03 1999-04-06 Pcr, Inc. Aminoorganofunctionalsiloxanes
US6278135B1 (en) 1998-02-06 2001-08-21 General Electric Company Green-light emitting phosphors and light sources using the same
US6294800B1 (en) 1998-02-06 2001-09-25 General Electric Company Phosphors for white light generation from UV emitting diodes
US6501091B1 (en) 1998-04-01 2002-12-31 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
US6864626B1 (en) 1998-06-03 2005-03-08 The Regents Of The University Of California Electronic displays using optically pumped luminescent semiconductor nanocrystals
US6617583B1 (en) 1998-09-18 2003-09-09 Massachusetts Institute Of Technology Inventory control
US6306610B1 (en) 1998-09-18 2001-10-23 Massachusetts Institute Of Technology Biological applications of quantum dots
US6251303B1 (en) 1998-09-18 2001-06-26 Massachusetts Institute Of Technology Water-soluble fluorescent nanocrystals
US6326144B1 (en) 1998-09-18 2001-12-04 Massachusetts Institute Of Technology Biological applications of quantum dots
US6426513B1 (en) 1998-09-18 2002-07-30 Massachusetts Institute Of Technology Water-soluble thiol-capped nanocrystals
US6468808B1 (en) 1998-09-24 2002-10-22 Advanced Research And Technology Institute, Inc. Water-soluble luminescent quantum dots and biomolecular conjugates thereof and related compositions and method of use
US6114038A (en) 1998-11-10 2000-09-05 Biocrystal Ltd. Functionalized nanocrystals and their use in detection systems
US6855202B2 (en) 2001-11-30 2005-02-15 The Regents Of The University Of California Shaped nanocrystal particles and methods for making the same
US6429583B1 (en) 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
AU1872100A (en) 1998-12-17 2000-07-03 Isis Innovation Limited Rare earth-activated phosphors
US6350552B1 (en) * 1998-12-23 2002-02-26 Lexmark International, Inc. Reactive compatibilization of polymeric components such as siloxane polymers with toner resins
US6696299B1 (en) 1999-05-11 2004-02-24 Massachusetts Institute Of Technology Polarization label for measuring 3-dimensional orientation
US6344520B1 (en) * 1999-06-24 2002-02-05 Wacker Silicones Corporation Addition-crosslinkable epoxy-functional organopolysiloxane polymer and coating compositions
JP3912961B2 (ja) * 1999-06-30 2007-05-09 信越化学工業株式会社 新規なシリコーン粉体処理剤及びそれを用いて表面処理された粉体、並びにこの粉体を含有する化粧料
JP2003504857A (ja) 1999-07-02 2003-02-04 プレジデント・アンド・フェローズ・オブ・ハーバード・カレッジ ナノスコピックワイヤを用いる装置、アレイおよびその製造方法
JP2003506518A (ja) * 1999-07-30 2003-02-18 ピーピージー インダストリーズ オハイオ， インコーポレイテッド 改良ひっかき抵抗性を有するコーティング組成物、コート基材及びそれに関連する方法
MX252994B (es) * 1999-07-30 2008-01-07 Ppg Ind Ohio Inc Composiciones de recubrimiento que tienen una mejor resistencia a las raspaduras, sustratos recubiertos, y metodos relacionados con los mismo.
DE60041977D1 (de) * 1999-07-30 2009-05-20 Ppg Ind Ohio Inc Flexible beschichtungszusammensetzungen mit verbesserter kratzfestigkeit, beschichtete oberfläche und verfahren zu deren herstellung
US6440213B1 (en) 1999-10-28 2002-08-27 The Regents Of The University Of California Process for making surfactant capped nanocrystals
US6179912B1 (en) 1999-12-20 2001-01-30 Biocrystal Ltd. Continuous flow process for production of semiconductor nanocrystals
US6225198B1 (en) 2000-02-04 2001-05-01 The Regents Of The University Of California Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process
CA2406983A1 (en) 2000-03-14 2001-09-27 Massachusetts Institute Of Technology A gain medium and lasers based on close-packed semiconductor nanocrystals
US6921496B2 (en) 2000-03-20 2005-07-26 Massachusetts Institute Of Technology Inorganic particle conjugates
US6353073B1 (en) * 2000-03-22 2002-03-05 Archimica (Florida), Inc. Poly (aminoorganofunctionaldisiloxanes)
JP2002038013A (ja) * 2000-07-21 2002-02-06 Shin Etsu Chem Co Ltd 粉体組成物、その油中粉体分散物及びそれらを含有する化粧料
TWI294636B (en) 2000-08-22 2008-03-11 Harvard College Doped elongated semiconductor articles, growing such articles, devices including such articles and fabricating such devices
EP2256834B1 (en) 2000-10-04 2012-09-26 The Board of Trustees of The University of Arkansas Colloidal metal chalcogenide nanocrystals
JP3872327B2 (ja) 2000-12-04 2007-01-24 日本碍子株式会社 半導体発光素子
US6576291B2 (en) 2000-12-08 2003-06-10 Massachusetts Institute Of Technology Preparation of nanocrystallites
DE10063090A1 (de) 2000-12-18 2002-06-20 Henkel Kgaa Nanoskaliges ZnO in Hygiene-Produkten
DE10063092A1 (de) 2000-12-18 2002-06-20 Henkel Kgaa Nanoskalige Materialien in Hygiene-Produkten
US20020083888A1 (en) 2000-12-28 2002-07-04 Zehnder Donald A. Flow synthesis of quantum dot nanocrystals
US7091656B2 (en) 2001-04-20 2006-08-15 Nichia Corporation Light emitting device
US7420005B2 (en) * 2001-06-28 2008-09-02 Dai Nippon Printing Co., Ltd. Photocurable resin composition, finely embossed pattern-forming sheet, finely embossed transfer sheet, optical article, stamper and method of forming finely embossed pattern
US6815064B2 (en) 2001-07-20 2004-11-09 Quantum Dot Corporation Luminescent nanoparticles and methods for their preparation
US20030066998A1 (en) 2001-08-02 2003-04-10 Lee Howard Wing Hoon Quantum dots of Group IV semiconductor materials
CA2464832C (en) 2001-10-24 2011-01-25 The Regents Of The University Of California Semiconductor liquid crystal composition and methods for making the same
US7777303B2 (en) 2002-03-19 2010-08-17 The Regents Of The University Of California Semiconductor-nanocrystal/conjugated polymer thin films
US6734465B1 (en) 2001-11-19 2004-05-11 Nanocrystals Technology Lp Nanocrystalline based phosphors and photonic structures for solid state lighting
US20040007169A1 (en) 2002-01-28 2004-01-15 Mitsubishi Chemical Corporation Semiconductor nanoparticles and thin film containing the same
WO2003070816A1 (en) 2002-02-19 2003-08-28 Photon-X, Inc. Polymer nanocomposites for optical applications
US6919109B2 (en) * 2002-04-01 2005-07-19 Fuji Photo Film Co., Ltd. Fine particle dispersion, coating solution for accepting layer for coloring agent for ink-jet recording sheet, ink-jet recording sheet using the dispersion, and method for producing fine particle dispersion
US6711426B2 (en) 2002-04-09 2004-03-23 Spectros Corporation Spectroscopy illuminator with improved delivery efficiency for high optical density and reduced thermal load
WO2003092081A1 (en) 2002-04-25 2003-11-06 Nichia Corporation Light-emitting device using fluorescent substance
US7175778B1 (en) 2002-05-10 2007-02-13 Nanocrystals Technology Lp Self-aligning QCA based nanomaterials
US6788453B2 (en) 2002-05-15 2004-09-07 Yissum Research Development Company Of The Hebrew Univeristy Of Jerusalem Method for producing inorganic semiconductor nanocrystalline rods and their use
WO2003098920A1 (en) 2002-05-16 2003-11-27 Koninklijke Philips Electronics N.V. Image sensor device
US6870311B2 (en) 2002-06-07 2005-03-22 Lumileds Lighting U.S., Llc Light-emitting devices utilizing nanoparticles
KR101032672B1 (ko) 2002-09-05 2011-05-06 나노시스, 인크. 나노구조로의 전하 이동 또는 나노구조로부터의 전하 이동을 용이하게 하는 유기종
JP2004169015A (ja) * 2002-11-01 2004-06-17 Shin Etsu Chem Co Ltd 粉体組成物及び油中粉体分散物．並びにそれらを有する化粧料
JP3922370B2 (ja) * 2003-01-30 2007-05-30 信越化学工業株式会社 ダイラタンシー性流体組成物
AU2004269297A1 (en) 2003-03-11 2005-03-10 Nanosys, Inc. Process for producing nanocrystals and nanocrystals produced thereby
US7279832B2 (en) 2003-04-01 2007-10-09 Innovalight, Inc. Phosphor materials and illumination devices made therefrom
EP1624851B1 (en) * 2003-05-16 2014-05-28 Dow Corning Corporation Hair care applications of emulsions containing elastomeric silanes and siloxanes with nitrogen atoms
ATE548017T1 (de) * 2003-08-01 2012-03-15 Minnesota Mining Mfg Gmbh Automischbare kitt-abformmasse
JP2005071039A (ja) * 2003-08-22 2005-03-17 Mitsubishi Electric Corp 情報管理装置
KR100697511B1 (ko) * 2003-10-21 2007-03-20 삼성전자주식회사 광경화성 반도체 나노결정, 반도체 나노결정 패턴형성용 조성물 및 이들을 이용한 반도체 나노결정의 패턴 형성 방법
US6933535B2 (en) 2003-10-31 2005-08-23 Lumileds Lighting U.S., Llc Light emitting devices with enhanced luminous efficiency
US7122808B2 (en) * 2003-11-14 2006-10-17 Konica Minolta Medical & Graphic, Inc. Radiation image conversion panel
US7875347B2 (en) * 2003-12-29 2011-01-25 General Electric Company Composite coatings for groundwall insulation, method of manufacture thereof and articles derived therefrom
US7645397B2 (en) 2004-01-15 2010-01-12 Nanosys, Inc. Nanocrystal doped matrixes
WO2005067524A2 (en) 2004-01-15 2005-07-28 Nanosys, Inc. Nanocrystal doped matrixes
TW200531315A (en) 2004-01-26 2005-09-16 Kyocera Corp Wavelength converter, light-emitting device, method of producing wavelength converter and method of producing light-emitting device
US7326908B2 (en) 2004-04-19 2008-02-05 Edward Sargent Optically-regulated optical emission using colloidal quantum dot nanocrystals
WO2005110916A2 (en) 2004-05-10 2005-11-24 Evident Technologies Iii-v semiconductor nanocrystal complexes and methods of making same
TWI406890B (zh) 2004-06-08 2013-09-01 Sandisk Corp 奈米結構之沉積後包封：併入該包封體之組成物、裝置及系統
US8563133B2 (en) * 2004-06-08 2013-10-22 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels
US7834121B2 (en) 2004-09-15 2010-11-16 Ppg Industries Ohio, Inc. Silicone resin containing coating compositions, related coated substrates and methods
KR100678285B1 (ko) 2005-01-20 2007-02-02 삼성전자주식회사 발광 다이오드용 양자점 형광체 및 그의 제조방법
DE102005039436B4 (de) * 2005-08-18 2009-05-07 Clariant International Limited Beschichtungsmassen enthaltend mit Silanen modifizierte Nanopartikel
KR101426316B1 (ko) * 2006-01-19 2014-08-06 다우 코닝 코포레이션 실리콘 수지 필름, 이의 제조방법, 및 나노물질로 충전된실리콘 조성물
KR101249078B1 (ko) * 2006-01-20 2013-03-29 삼성전기주식회사 실록산계 분산제 및 이를 포함하는 나노입자 페이스트조성물
JP2008063565A (ja) * 2006-08-08 2008-03-21 Sekisui Chem Co Ltd 光半導体用熱硬化性組成物、光半導体素子用封止剤、光半導体素子用ダイボンド材、光半導体素子用アンダーフィル材及び光半導体素子
US7834083B2 (en) * 2006-10-11 2010-11-16 Samsung Electro-Mechanics Co., Ltd. Nanocomposite composition comprising transparent nanoparticles
US7858198B2 (en) * 2007-04-10 2010-12-28 Shin-Etsu Chemical Co., Ltd. Phosphor-containing adhesive silicone composition, composition sheet formed of the composition, and method of producing light emitting device using the sheet
EP2229220A2 (fr) * 2007-12-05 2010-09-22 L'Oréal Procédé cosmétique de maquillage et/ou de soin utilisant une résine de siloxane et une huile siliconée phénylée
US20110189102A1 (en) 2008-02-08 2011-08-04 Kairdolf Brad A Coated quantum dots and methods of making and using thereof
CN102686646B (zh) * 2009-12-24 2015-08-19 道康宁东丽株式会社 用在化妆品中的粉末用的表面处理剂及含有用该表面处理剂处理的粉末的化妆品

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