CN106435739B - 一种纳米晶体的制备方法 - Google Patents
一种纳米晶体的制备方法 Download PDFInfo
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- CN106435739B CN106435739B CN201610828099.3A CN201610828099A CN106435739B CN 106435739 B CN106435739 B CN 106435739B CN 201610828099 A CN201610828099 A CN 201610828099A CN 106435739 B CN106435739 B CN 106435739B
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- nanocrystal
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- aluminium
- gallium
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/08—Other phosphides
- C01B25/082—Other phosphides of boron, aluminium, gallium or indium
- C01B25/087—Other phosphides of boron, aluminium, gallium or indium of gallium or indium
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Luminescent Compositions (AREA)
Abstract
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Claims (13)
Priority Applications (1)
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CN201910450937.1A CN110143579B (zh) | 2016-02-03 | 2016-09-19 | 一种纳米晶体的制备方法 |
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CN2016100759529 | 2016-02-03 | ||
CN201610075952 | 2016-02-03 |
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CN201910450937.1A Division CN110143579B (zh) | 2016-02-03 | 2016-09-19 | 一种纳米晶体的制备方法 |
Publications (2)
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CN106435739A CN106435739A (zh) | 2017-02-22 |
CN106435739B true CN106435739B (zh) | 2019-06-28 |
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CN201910450937.1A Active CN110143579B (zh) | 2016-02-03 | 2016-09-19 | 一种纳米晶体的制备方法 |
CN201610828099.3A Active CN106435739B (zh) | 2016-02-03 | 2016-09-19 | 一种纳米晶体的制备方法 |
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CN201910450937.1A Active CN110143579B (zh) | 2016-02-03 | 2016-09-19 | 一种纳米晶体的制备方法 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180052170A (ko) * | 2016-11-09 | 2018-05-18 | 시노코 유한회사 | 결정 경계 결함이 최소화된 연속적 결정성장 구조를 가지는 양자점 합성 방법 및 이에 의해 제조된 양자점 |
CN107754801B (zh) * | 2017-10-18 | 2019-12-20 | 成都理工大学 | 八面体结构的Fe@Ni纳米晶体的制备方法 |
CN107737950B (zh) * | 2017-10-25 | 2019-05-10 | 成都理工大学 | 八面体结构的均匀分布式FeNi纳米晶体的制备方法 |
CN110655913A (zh) * | 2018-06-28 | 2020-01-07 | 深圳市晟诚世纪科技有限公司 | 一种纳米晶体的制备方法 |
CN111908436B (zh) * | 2019-05-10 | 2022-12-02 | 苏州星烁纳米科技有限公司 | 磷化铟纳米晶的制备方法及由其制备的产品 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101457403A (zh) * | 2008-12-22 | 2009-06-17 | 中国科学院长春应用化学研究所 | 尺寸可控半导体纳米簇和纳米晶的绿色合成方法 |
CN104387772A (zh) * | 2009-05-01 | 2015-03-04 | 纳米系统公司 | 用于纳米结构体分散的官能化基质 |
CN105460903A (zh) * | 2015-09-22 | 2016-04-06 | 苏州星烁纳米科技有限公司 | 一种纳米晶体制备方法、纳米晶体及气体溶液的制备和保存装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7723394B2 (en) * | 2003-11-17 | 2010-05-25 | Los Alamos National Security, Llc | Nanocrystal/sol-gel nanocomposites |
US20080044340A1 (en) * | 2004-06-10 | 2008-02-21 | Ohio University | Method for Producing Highly Monodisperse Quantum Dots |
CN1673095A (zh) * | 2005-03-11 | 2005-09-28 | 中山大学 | CdSe纳米晶体的制备方法 |
CN101476161B (zh) * | 2008-12-24 | 2011-06-22 | 云南大学 | 一种针状ZnSe半导体纳米晶的合成方法 |
CN101786609B (zh) * | 2010-01-11 | 2012-02-01 | 云南大学 | 一种棒形ZnSe荧光纳米晶的合成方法 |
KR101644053B1 (ko) * | 2012-12-07 | 2016-08-01 | 삼성전자 주식회사 | 나노 결정 합성 방법 및 나노 결정 조성물 |
US9981900B2 (en) * | 2014-04-12 | 2018-05-29 | Cn Innovations | Methods of metal oxide nanocrystals preparation |
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2016
- 2016-09-19 CN CN201910450937.1A patent/CN110143579B/zh active Active
- 2016-09-19 CN CN201610828099.3A patent/CN106435739B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101457403A (zh) * | 2008-12-22 | 2009-06-17 | 中国科学院长春应用化学研究所 | 尺寸可控半导体纳米簇和纳米晶的绿色合成方法 |
CN104387772A (zh) * | 2009-05-01 | 2015-03-04 | 纳米系统公司 | 用于纳米结构体分散的官能化基质 |
CN105460903A (zh) * | 2015-09-22 | 2016-04-06 | 苏州星烁纳米科技有限公司 | 一种纳米晶体制备方法、纳米晶体及气体溶液的制备和保存装置 |
Also Published As
Publication number | Publication date |
---|---|
CN110143579B (zh) | 2022-07-29 |
CN110143579A (zh) | 2019-08-20 |
CN106435739A (zh) | 2017-02-22 |
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Application publication date: 20170222 Assignee: Suzhou ronghua Leasing Co., Ltd Assignor: SUZHOU XINGSHUO NANOTECH Co.,Ltd. Contract record no.: X2021320010039 Denomination of invention: A preparation method of nanocrystals Granted publication date: 20190628 License type: Exclusive License Record date: 20211117 |
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Denomination of invention: A preparation method of nanocrystals Effective date of registration: 20211117 Granted publication date: 20190628 Pledgee: Suzhou ronghua Leasing Co.,Ltd. Pledgor: SUZHOU XINGSHUO NANOTECH Co.,Ltd. Registration number: Y2021320010480 |
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