JP6959119B2 - 量子ドット及びその製造方法、並びに樹脂組成物、波長変換材料、発光素子 - Google Patents
量子ドット及びその製造方法、並びに樹脂組成物、波長変換材料、発光素子 Download PDFInfo
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Description
例えば、量子ドットを樹脂に分散させた樹脂組成物をPETやポリイミドなどの透明フィルムに塗布し硬化させ、ラミネート加工することで波長変換材料を得ることができる。
球状で粒子径が6nmのInP/ZnSコアシェル半導体結晶粒子(発光波長534nm、内部量子効率 62%)を用い、半導体結晶粒子濃度を1.0wt%としたトルエン分散液を用いた。この半導体結晶粒子表面にはリガンドとしてパルミチン酸が配位している。
(手順1)
この半導体結晶粒子1wt%トルエン溶液10mLに[3−(トリメチルシリル)プロピル]こはく酸無水物を5wt%添加し、6時間撹拌を行った。
(手順2)
この溶液にアセトンを過剰に加え、半導体結晶粒子を沈殿させた後、遠心分離機により固体を回収した。
(手順3)
回収した固体を10mLのトルエンに再分散させ、手順1と同様に[3−(トリメチルシリル)プロピル]こはく酸無水物を2wt%添加し、6時間撹拌を行った。
(手順4)
手順2と同様にアセトンを過剰に加え、半導体結晶粒子を沈殿させた後、遠心分離機により固体を回収した。
(手順5)
回収した固体をトルエンに再分散させた。
上記により、半導体結晶粒子表面に[3−(トリメチルシリル)プロピル]こはく酸無水物が配置された量子ドットを得ることができた。
シクロヘキサン100mLとポリオキシエチレン(5)ノニルフェニルエーテル(ローディア社製 IGEPAL−CO520)1.0gを混合した溶液にテトラエトキシシラン1.0mLを加え、激しく撹拌した状態で手順1で得られた半導体結晶粒子溶液3.0mLを滴下した。撹拌したまま10%アンモニア水を5mLを少量ずつ滴下し、20時間撹拌を行った。攪拌後、遠心分離によりSiO2層を有する量子ドットが得られた。
実施例2で得られたSiO2被覆量子ドットを用いて波長変換材料を作製した。
上記SiO2被覆量子ドットの1.0wt%アルコール溶液1.0gをシリコーン樹脂(信越化学工業(株)社製 LPS−5547)10.0gと混合し、撹拌したまま50℃で加熱しながら減圧下で溶媒除去を行った。その後、真空脱気を行い厚み50μmのポリエチレンテレフタレート(PET)フィルム上に塗布し、バーコーターにより厚み100μmの量子ドット樹脂層を形成した。さらにこの樹脂層上にPETフィルムを貼り合せラミネート加工した。このフィルムを60℃で2時間加熱、その後150℃で4時間加熱し量子ドット樹脂層を硬化させた。
実施例1の処理(手順1〜5)を行う前の半導体結晶粒子を用い、手順1〜5を行うことなく実施例2と同様の手順でSiO2被覆量子ドットの作製を行った。
比較例1で得られたSiO2被覆量子ドットを用いて波長変換材料を作製した。
上記SiO2被覆量子ドットの1.0wt%アルコール溶液1.0gをシリコーン樹脂(信越化学工業(株)社製 LPS−5547)10.0gと混合し、撹拌したまま50℃で加熱しながら減圧下で溶媒除去を行った。その後、真空脱気を行い厚み50μmのポリエチレンテレフタレート(PET)フィルム上に塗布し、バーコーターにより厚み100μmの量子ドット樹脂層を形成した。さらにこの樹脂層上にPETフィルムを貼り合せラミネート加工した。このフィルムを60℃で2時間加熱、その後150℃で4時間加熱し量子ドット樹脂層を硬化させた。
Claims (6)
- 粒子径が20nm以下の半導体結晶粒子を含む量子ドットであって、前記半導体結晶粒子表面に該半導体結晶粒子と相互作用する官能基を2つ以上有する配位子が2座以上で配位したものであり、前記量子ドットの表面が、さらに、ポリシルセスキオキサン、ポリ(メタクリル酸メチル)、ポリアクリロニトリル又はポリエチレングリコールの高分子層で被覆されたものであることを特徴とする量子ドット。
- 請求項1に記載の量子ドットのうちの少なくとも1つが樹脂に分散したものであることを特徴とする樹脂組成物。
- 請求項2に記載の樹脂組成物の硬化物を用いたものであることを特徴とする波長変換材料。
- 請求項3に記載の波長変換材料を用いたものであることを特徴とする発光素子。
- 粒子径が20nm以下の半導体結晶粒子を含む量子ドットの製造方法であって、前記半導体結晶粒子の表面を、前記半導体結晶粒子と相互作用する官能基を2つ以上有し、前記半導体結晶粒子と2座以上で配位する配位子で処理する工程と、
前記配位子が有する前記半導体結晶粒子に配位する前記官能基とは異なる別の官能基を反応点として、ポリシルセスキオキサン、ポリ(メタクリル酸メチル)、ポリアクリロニトリル又はポリエチレングリコールの高分子層を形成する工程を含むことを特徴とする量子ドットの製造方法。 - 粒子径が20nm以下の半導体結晶粒子を含む量子ドットの製造方法であって、前記半導体結晶粒子の表面に存在する配位子を、前記半導体結晶粒子と相互作用する官能基を2つ以上有し、前記半導体結晶粒子と2座以上で配位する配位子で置換し、
さらに、前記配位子が有する前記半導体結晶粒子に配位する前記官能基とは異なる別の官能基を反応点として、ポリシルセスキオキサン、ポリ(メタクリル酸メチル)、ポリアクリロニトリル又はポリエチレングリコールの高分子層を形成することを特徴とする量子ドットの製造方法。
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JP2017232506A JP6959119B2 (ja) | 2017-12-04 | 2017-12-04 | 量子ドット及びその製造方法、並びに樹脂組成物、波長変換材料、発光素子 |
CN201880078304.6A CN111433320B (zh) | 2017-12-04 | 2018-11-06 | 量子点及其制造方法、以及树脂组合物、波长转换材料、发光元件 |
US16/769,607 US11242482B2 (en) | 2017-12-04 | 2018-11-06 | Quantum dot, method for producing the same, resin composition, wavelength conversion material, and light emitting device |
PCT/JP2018/041122 WO2019111617A1 (ja) | 2017-12-04 | 2018-11-06 | 量子ドット及びその製造方法、並びに樹脂組成物、波長変換材料、発光素子 |
KR1020207015340A KR102647603B1 (ko) | 2017-12-04 | 2018-11-06 | 양자점 및 그 제조방법, 그리고 수지 조성물, 파장변환재료, 발광소자 |
TW107143196A TWI797205B (zh) | 2017-12-04 | 2018-12-03 | 量子點及其製造方法與樹脂組成物、波長轉換材料、發光元件 |
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KR101783487B1 (ko) * | 2009-05-01 | 2017-10-23 | 나노시스, 인크. | 나노구조의 분산을 위한 기능화된 매트릭스 |
US9139770B2 (en) * | 2012-06-22 | 2015-09-22 | Nanosys, Inc. | Silicone ligands for stabilizing quantum dot films |
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CN104845623B (zh) * | 2015-04-08 | 2016-09-28 | 济南大学 | SiO2包覆的发光量子点复合颗粒及其制备方法 |
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JP6713048B2 (ja) | 2016-07-20 | 2020-06-24 | 富士フイルム株式会社 | 量子ドット含有組成物、波長変換部材、バックライトユニット、および液晶表示装置 |
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EP3412691A1 (en) * | 2017-06-07 | 2018-12-12 | Rhodia Operations | Polymer dispersions for wax inhibition |
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US11242482B2 (en) | 2022-02-08 |
TW201928013A (zh) | 2019-07-16 |
WO2019111617A1 (ja) | 2019-06-13 |
TWI797205B (zh) | 2023-04-01 |
CN111433320B (zh) | 2024-03-22 |
KR102647603B1 (ko) | 2024-03-14 |
KR20200091869A (ko) | 2020-07-31 |
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US20200317998A1 (en) | 2020-10-08 |
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