KR100697511B1 - 광경화성 반도체 나노결정, 반도체 나노결정 패턴형성용 조성물 및 이들을 이용한 반도체 나노결정의 패턴 형성 방법 - Google Patents
광경화성 반도체 나노결정, 반도체 나노결정 패턴형성용 조성물 및 이들을 이용한 반도체 나노결정의 패턴 형성 방법 Download PDFInfo
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- KR100697511B1 KR100697511B1 KR1020030073338A KR20030073338A KR100697511B1 KR 100697511 B1 KR100697511 B1 KR 100697511B1 KR 1020030073338 A KR1020030073338 A KR 1020030073338A KR 20030073338 A KR20030073338 A KR 20030073338A KR 100697511 B1 KR100697511 B1 KR 100697511B1
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- semiconductor nanocrystal
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- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
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- H—ELECTRICITY
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Abstract
Description
Claims (22)
- 하기 화학식 1로 표현되는 광경화성 화합물로 표면 배위된 반도체 나노결정.[화학식 1]X-A-B상기 식에서, X는 NC-, HOOC-, HRN-, POOOH-, RS- 또는 RSS- (이 때, R는 수소이거나, 탄소수 1 내지 10 의 포화 또는 불포화 지방족 탄화수소기이고) 이고; A는 직접결합이거나, 지방족 유기기, 페닐렌기 또는 비페닐렌기이고; B는 중간 또는 말단에 -CN, -COOH, 할로겐기, 탄소수 1 내지 5의 할로겐화 알킬, 아민기, 탄소수 6 내지 15의 방향족 탄화수소기, 또는, F, Cl, Br, 할로겐화 알킬, R'O- (이 때, R'은 수소 또는 탄소수 1 내지 5의 알킬임), -COOH, 아민기 혹은 -NO2로 치환된 탄소수 6 내지 12의 방향족 탄화수소기를 가질 수 있는, 1 이상의 탄소-탄소 이중결합을 포함한 유기기이다.
- 삭제
- 제 1항에 있어서, 상기 화학식 1 중 A의 지방족 유기기는 포화 지방족 탄화수소기, 지방족 에스테르기, 지방족 아마이드기, 지방족 옥시카르보닐기 및 지방족 에테르기로 이루어진 군으로부터 선택되는 것을 특징으로 하는 반도체 나노결정.
- 제 1항에 있어서, 상기 화학식 1 중 B는 하기 화학식 2를 가지는 유기기인 것을 특징으로 하는 반도체 나노결정:[화학식 2]-CR1=CR2R3상기 식에서, R1은 수소, -COOH, 할로겐기, 탄소수 1 내지 5의 알킬 혹은 할로겐화 알킬기 이고, R2 및 R3는 각각 독립적으로, 수소, 탄소수 1 내지 30의 알킬, -CN, -COOH, 할로겐기, 탄소수 1 내지 5의 할로겐화 알킬기, 1 이상의 탄소-탄소 이중결합을 포함한 탄소수 2 내지 30의 불포화 지방족 탄화수소기, 탄소수 6 내지 12의 방향족 탄화수소기 또는, 1 이상의 수소가 F, Cl, Br, 히드록시, 탄소수 1 내지 5의 할로겐화 알킬, 아민기, R'O- (이 때, R'은 탄소수 1 내지 5의 알킬임), -COOH 혹은 NO2로 치환된 탄소수 6 내지 12의 방향족 탄화수소기이다.
- 제 1항에 있어서, 상기 광경화성 화합물은 아크릴산 화합물, 불포화 지방산 화합물, 신남산 화합물, 비닐 벤조산 화합물, 아크릴로니트릴계 화합물, 불포화 니트릴계 화합물, 불포화 아민화합물 및 불포화 설파이드 화합물로 이루어진 군으로부터 선택되는 것을 특징으로 하는 반도체 나노결정.
- 제 1항에 있어서, 상기 광경화성 화합물은 메타크릴산(methacrylic acid), 크로톤산 (crotonic acid), 비닐아세트산 (vinylacetic acid), 티그린산 (tiglic acid), 3,3-디메틸메타크릴산 (3,3-dimethylacrylic acid), 트란스-2-펜텐산 (trans-2-pentenoic acid), 4-펜텐산(4-pentenoic acid), 트란스-2-메틸-2-펜텐산 (trans-2-methyl-2-pentenoic acid), 2,2-디메틸-4-펜텐산 (2,2-dimethyl-4-pentenoic acid), 트란스-2-헥센산(trans-2-hexenoic acid), 트란스-3-헥센산 (trans-3-hexenoic acid), 2-에틸-2-헥센산 (2-ethyl-2-hexenoic acid), 6-헵텐산 (6-heptenoic acid), 2-옥텐산 (2-octenoic acid), 시트로넬린산 (citronellic acid), 운데실렌산 (undecylenic acid), 미리스톨레산 (myristoleic acid), 팔미톨레산 (palmitoleic acid), 올레산 (oleic acid), 엘라이드산(elaidic acid), 시스-11-엘코센산(cis-11-elcosenoic acid), 유르산(euric acid), 너르본산 (nervonic acid), 트란스-2,4-펜타디엔산 (trans-2,4-pentadienoic acid), 2,4-헥사디엔산 (2,4-hexadienoic acid), 2,6-헵타디엔산 (2,6-heptadienoic acid), 제란산 (geranic acid), 리놀레산 (linoleic acid), 11,14-에이코사디엔산 (11,14-eicosadienoic acid), 시스-8,11,14-에이코사트리엔산 (cis-8,11,14-eicosatrienoic acid), 아라키돈산 (arachidonic acid), 시스-5,8,11,14,17-에이코사펜타엔산 (cis-5,8,11,14,17-eicosapentaenoic acid), 시스-4,7,10,13,16,19-도코사헥사엔산 (cis-4,7,10,13,16,19-docosahexaenoic acid), 푸마르산 (fumaric acid), 말레산 (maleic acid), 이타콘산 (itaconic acid), 시라콘산 (ciraconic acid), 메사콘산 (mesaconic acid), 트란스-글루타콘산 (trans-glutaconic acid), 트란스-베타-히드로뮤콘산 (trans-beta-hydromuconic acid), 트란스-트라우마트산 (trans-traumatic acid), 트란스 뮤콘산 (trans-muconic acid), 시스-아코니트산 (cis-aconitic acid), 트란스-아코니트산 (trans-aconitic acid), 시스-3-클로로아크릴산 (cis-3-chloroacrylic acid), 트란스-3-클로로아크릴산 (trans-3-chloroacrylic acid), 2-브로모아크릴산 (2-bromoacrylic acid), 2-(트리플루오로메틸)아크릴산 (2-(trifluoromethyl)acrylic acid), 트란스-스티릴아세트산 (trans-styrylacetic acid), 트란스-신남산 (trans-cinnamic acid), 알파-메틸신남산 (alpha-methylcinnamic acid), 2-메틸신남산 (2-methylcinnamic acid), 2-플루오로신남산 (2-fluorocinnamic acid), 2-(트리플루오로메틸)신남산 (2-(trifluoromethyl)cinnamic acid), 2-클로로신남산 (2-chlorocinnamic acid), 2-메톡시신남산 (2-methoxycinnamic acid), 2-히드록시신남산 (2-hydroxycinnamic acid), 2-니트로신남산 (2-nitrocinnamic acid), 2-카르복시신남산 (2-carboxycinnamic acid), 트란스-3-플루오로신남산 (trans-3-fluorocinnamic acid), 3-(트리플루오로메틸)신남산 (3-(trifluoromethyl)cinnamic acid), 3-클로로신남산 (3-chlorocinnamic acid), 3-브로모신남산 (3-bromocinnamic acid), 3-메톡시신남산 (3-methoxycinnamic acid), 3-히드록시신남산 (3-hydroxycinnamic acid), 3-니트로신남산 (3-nitrocinnamic acid), 4-메틸신남산 (4-methylcinnamic acid), 4-플루오로신남산 (4-fluorocinnamic acid), 트란스-4-(트리플루오로메틸)-신남산 (trans-4-(trifluoromethyl)-cinnamic acid), 4-클로로신남산 (4-chlorocinnamic acid), 4-브로모신남산 (4-bromocinnamic acid), 4-메톡시신남산 (4-methoxycinnamic acid), 4-히드록시신남산 (4-hydroxycinnamic acid), 4-니트로신남산 (4-nitrocinnamic acid), 3,3-디메톡시신남산 (3,3-dimethoxycinnamic acid), 4-비닐벤조산 (4-vinylbenzoic acid), 알릴 메틸설파이드 (Allyl methyl sulfide), 알릴디설파이드 (allyl disulfide), 디알릴아민 (diallyl amine), 올레일아민 (oleylamine), 3-아미노-1-프로판올 비닐 에테르 (3-amino-1-propanol vinyl ether), 4-클로로신나모니트릴 (4-chlorocinnamonitrile), 4-메톡시신나모니트릴 (4-methoxycinnamonitrile), 3,4-디메톡시신나모니트릴 (3,4-dimethoxycinnamonitrile), 4-디메틸아미노신나모니트릴 (4-dimethylaminocinnamonitrile), 아크릴로니트릴 (acrylonitrile), 알릴시아나이드 (allyl cyanide), 크로토니트릴 (crotononitrile), 메타크릴로니트릴 (methacrylonitrile), 시스-2-펜텐니트릴 (cis-2-pentenenitrile), 트란스-3-펜텐니트릴 (trans-3-pentenenitrile), 3,7-디메틸-2,6-옥타디엔니트릴 (3,7-dimethyl-2,6-octadienenitrile) 및 1,4-디시아노-2-부텐 (1,4-dicyano-2-butene)으로 이루어진 군으로부터 선택되는 것을 특징으로 하는 반도체 나노결정.
- 제 1항에 있어서, 상기 반도체 나노결정은 CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, GaN, GaP, GaAs 및 InP로 이루어진 군으로부터 선택된 1종 또는 2종 이상의 화합물인 것을 특징으로 하는 반도체 나노결정.
- 제 7항에 있어서, 반도체 나노결정이 CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, GaN, GaP, GaAs 및 InP로 이루어진 군으로부터 선택된 2종 이상의 화합물인 경우, 단순 혼합물로 존재하거나, 각 화합물들의 결정구조가 부분적으로 나누어져 동일 입자내에 존재하거나, 혹은 합금 형태로 존재하는 것을 특징으로 하는 반도체 나노결정.
- ⅰ) 반도체 나노결정 및 ⅱ) 광경화성 화합물로서, 아크릴기 및 비닐기로 이루어진 군으로부터 선택된 1종 또는 2종의 작용기를 갖는 고분자, 에스테르계 화합물 또는 에테르계 화합물을 포함하는 반도체 나노결정 패턴 형성용 조성물.
- 제 9항에 있어서, 상기 ⅰ) 반도체 나노결정은 하기 화학식 1로 표현되는 화합물이 표면 배위된 광경화성 반도체 나노결정인 것을 특징으로 하는 반도체 나노결정 패턴 형성용 조성물:[화학식 1]X-A-B상기 식에서, X는 NC-, HOOC-, HRN-, -POOOH, RS- 또는 RSS- (이 때, R는 수소이거나, 탄소수 1 내지 10 의 포화 또는 불포화 지방족 탄화수소기이고) 이고; A는 직접결합이거나, 지방족 유기기, 페닐렌기 또는 비페닐렌기이고; B는 중간 또는 말단에 -CN, -COOH, 할로겐기, 탄소수 1 내지 5의 할로겐화 알킬, 아민기, 탄소수 6 내지 15의 방향족 탄화수소기 또는 F, Cl, Br, 할로겐화 알킬, R'O- (이 때, R'은 수소 또는 탄소수 1 내지 5의 알킬임), -COOH, 아민기 혹은 -NO2로 치환된 탄소수 6 내지 12의 방향족 탄화수소기를 가질 수 있는, 1 이상의 탄소-탄소 이중결합을 포함한 유기기이다.
- 제 9항 또는 제 10항에 있어서, 상기 ⅱ) 광경화성 화합물은 아크릴기 및 비닐기로 이루어진 군으로부터 선택된 1종 또는 2종의 작용기를 포함하는 다관능성 아크릴레이트계 화합물 또는 다관능성 폴리알킬렌옥사이드이거나, 혹은 아크릴기 및 비닐기로 이루어진 군으로부터 선택된 1종 또는 2종의 작용기를 포함하는 폴리실록산계 중합체인 것을 특징으로 하는 반도체 나노결정 패턴 형성용 조성물.
- 제 9항 또는 제 10항에 있어서, 상기 광경화성 화합물은 아릴옥시레이티드 시클로헥실 디아크릴레이트 (Allyloxylated cyclohexyl diacrylate), 비스(아크릴옥시 에틸)히드록실 이소시아뉴레이트 [Bis(acryloxy ethyl)hydroxyl isocyanurate], 비스(아크릴옥시 네오펜틸글리콜)아디페이트 [Bis (acryloxy neopentylglycol) adipate], 비스페놀A 디아크릴레이트 (Bisphenol A diacrylate), 비스페놀A 디메타크릴레이트 (Bisphenyl A dimethacrylate), 1,4-부탄디올 디아크릴레이트 (1,4-butanediol diacrylate), 1,4-부탄디올 디메타크릴레이트 (1,4-butanediol dimethacrylate), 1,3-부틸렌글리콜 다아클릴레이트 (1,3-butyleneglycol diacrylate), 1,3-부틸렌글리콜 다메타클릴레이트 (1,3-butyleneglycol dimethacrylate), 디시클로펜타닐 디아크릴레이트 (dicyclopentanyl diacrylate), 디에틸렌글리콜디아크릴레이트 (diethyleneglycol diacrylate), 디에틸렌글리콜디메타크릴레이트 (diethyleneglycol dimethacrylate), 디펜타에리쓰롤헥사아크릴레이트 (dipentaerythirol hexaacrylate), 디펜타에리쓰롤모노히드록시헥사아크릴레이트 (dipentaerythirol monohydroxy pentacrylate), 디트리메틸올프로판 테트라아크릴레이트 (ditrimethylolprpane tetraacrylate), 에틸렌글리콜 디메타크릴레이트 (ethyleneglycol dimethacrylate), 글리세롤메타크릴레이트 (glyceol methacrylate), 1,6-헥산디올 디아크릴레이트 (1,6-hexanediol diacrylate), 네오펜틸글리콜 디메타크릴레이트 (neopentylglycol dimethacrylate), 네오펜틸글리콜 히드록시피바레이트 디아크릴레이트 (neopentylglycol hydroxypivalate diacrylate), 펜타에리쓰롤 트리아크릴레이트 (pentaerythritol triacrylate), 펜타에리트리톨 테트라아크릴레이트 (pentaerythritol tetraacrylate), 인산 디메타크릴레이트(phosphoric acid dimethacrylate), 폴리에틸렌글리콜 디아크릴레이트 (polyetyleneglycol diacrylate), 폴리프로필렌글리콜 디아크릴레이트 (polypropyleneglycol diacrylate), 테트라에틸렌글리콜 디아크릴레이트 (tetraethyleneglycol diacrylate), 테트라브로모비스페놀 A 디아크릴레이트 (tetrabromobisphenol A diacrylate), 트리에틸렌글리콜 디비닐에테르 (triethyleneglycol divinylether), 트리글리세롤 디아크릴레이트 (triglycerol diacrylate), 트리메틸올 프로판 트리아크릴레이트 (trimethylolpropane triacrylate), 트리프로필렌글리콜 디아크릴레이트 (tripropyleneglycol diacrylate), 트리스(아크릴옥시에틸)이소시아뉴레이트 [tris(acryloxyethyl)isocyanurate], 인산 트리아크릴레이트 (phosphoric acid triacrylate), 인산 디아크릴레이트 (phosphoric acid diacrylate), 아크릴산 프로파길 에스테르 (acrylic acid propargyl ester), 말단에 비닐기를 가진 폴리디메틸실록산 (Vinyl teminated Polydimethylsiloxane), 말단에 비닐기를 가진 디페닐실록산-디메틸실록산 공중합체 (Vinyl teminated diphenylsiloxane-dimethylsiloxane copolymer), 말단에 비닐기를 갖는 폴리페틸메틸실록산 (Vinyl teminated Polyphenylmethylsiloxane), 말단에 비닐기를 갖는 트리플루오로메틸실록산-디메틸실록산 공중합체 (Vinyl teminated trifluoromethylsiloxane-dimethylsiloxane copolymer), 말단에 비닐기를 갖는 디에틸실록산-디메틸실록산 공중합체 (Vinyl teminated diethylsiloxane-dimethylsiloxane copolymer), 비닐메틸실록산 (Vinylmethylsiloxane), 말단에 모노메타크릴옥시프로필기를 갖는 폴리디메틸실록산 (Monomethacryloyloxypropyl Terminated Polydimethyl siloxane), 말단에 모노비닐기를 가지는 폴리디메틸실록산 (Monovinyl Terminated Polydimethyl siloxane) 및 말단에 모노알릴기 또는 모노트리메틸실록시기를 갖는 폴리에틸렌 옥사이드 (Monoallyl-mono trimethylsiloxy terminated polyethylene oxide)로 이루어진 군으로부터 선택되는 것을 특징으로 하는 반도체 나노결정 패턴 형성용 조성물.
- 제 9항 또는 제 10항에 있어서, 상기 반도체 나노결정은 CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, GaN, GaP, GaAs 및 InP로 이루어진 군으로부터 선택된 1종 또는 2종 이상의 화합물인 것을 특징으로 하는 반도체 나노결정 패턴 형성용 조성물.
- 제 9항 또는 제 10항에 있어서, 상기 반도체 나노결정이 CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, GaN, GaP, GaAs 및 InP로 이루어진 군으로부터 선택된 2종 이상의 화합물인 경우, 단순 혼합물로 존재하거나, 각 화합물들의 결정구조가 부분적으로 나누어져 동일 입자내에 존재하거나, 혹은 합금 형태로 존재하는 것을 특징으로 하는 반도체 나노결정 패턴 형성용 조성물.
- ⅰ) 제 1항의 반도체 나노결정 혹은 제 9항 또는 제10항의 조성물로부터 반도체 나노결정의 필름을 수득하는 단계; ⅱ) 상기 필름을 전자기파에 선택적으로 노광하는 단계; 및 ⅲ) 상기 노광된 필름을 현상하는 단계를 포함하는 것을 특징으로 하는 반도체 나노결정의 패턴형성 방법.
- 제 15항에 있어서, 상기 ⅰ) 단계에서 수득한 필름을, 상기 ⅱ) 단계의 노광 전, 30 내지 100℃의 온도에서 건조하는 단계를 추가로 포함하는 것을 특징으로 하는 반도체 나노결정의 패턴형성 방법.
- 제 15항에 있어서, 상기 ⅰ) 단계에서 필름은 제 1항에 따른 반도체 나노결정 또는 제 9항에 따른 조성물을 유기용매에 분산시키고, 상기 분산액을 스핀코팅 (spin coating), 딥 코팅 (dip coating), 스프레이 코팅 (spray coating) 및 블레이드 코팅 (blade coating)법으로 이루어진 군으로부터 선택된 방법으로 기판에 코팅하여 수득하는 것을 특징으로 하는 반도체 나노결정의 패턴형성 방법.
- 제 17항에 있어서, 상기 유기용매는 아세토페논계, 벤조인계, 벤조페논계, 및 티옥산톤계 광개시제로 이루어진 군으로부터 선택된 광개시제를 추가로 포함하는 것을 특징으로 하는 반도체 나노결정의 패턴형성 방법.
- 제 15항에 있어서, 상기 ⅱ) 단계의 선택적 노광 처리는 정해진 패턴을 가진 포토마스크 하에서 50 mJ/㎠ 내지 850 mJ/㎠ 의 노광량으로 수행하는 것을 특징으로 하는 반도체 나노결정의 패턴형성 방법.
- 제 15항에 있어서, 상기 ⅱ)단계의 노광시 파장은 200 nm 내지 500nm 의 범위이고, 에너지는 100 내지 800W 정도인 광원을 사용하는 것을 특징으로 하는 반도체 나노결정의 패턴형성 방법.
- 제 15항에 있어서, 상기 ⅲ) 단계의 현상은 유기용매, 약산 혹은 약염기 용액, 또는 물을 사용하는 것을 특징으로 하는 반도체 나노결정의 패턴형성 방법.
- 한 쌍의 전극사이에 유·무기 혼합물을 포함하는 전기발광소자에 있어서, 상기 발광소자의 발광층에 제 15항에 따른 방법으로 수득한 반도체 나노결정 패턴을 포함하는 것을 특징으로 하는 유기 전기 발광 소자.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10203599B2 (en) | 2015-10-22 | 2019-02-12 | Samsung Electronics Co., Ltd. | Photosensitive compositions, quantum dot polymer composite pattern prepared therefrom, and electronic devices including the same |
US10983432B2 (en) | 2015-08-24 | 2021-04-20 | Samsung Electronics Co., Ltd. | Photosensitive compositions, preparation methods thereof, quantum dot polymer composite prepared therefrom |
Families Citing this family (98)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100697511B1 (ko) * | 2003-10-21 | 2007-03-20 | 삼성전자주식회사 | 광경화성 반도체 나노결정, 반도체 나노결정 패턴형성용 조성물 및 이들을 이용한 반도체 나노결정의 패턴 형성 방법 |
US7294449B1 (en) | 2003-12-31 | 2007-11-13 | Kovio, Inc. | Radiation patternable functional materials, methods of their use, and structures formed therefrom |
US7803347B2 (en) * | 2005-07-01 | 2010-09-28 | Tohoku Techno Arch Co., Ltd. | Organically modified fine particles |
US7645397B2 (en) * | 2004-01-15 | 2010-01-12 | Nanosys, Inc. | Nanocrystal doped matrixes |
KR100632632B1 (ko) * | 2004-05-28 | 2006-10-12 | 삼성전자주식회사 | 나노 결정의 다층 박막 제조 방법 및 이를 이용한유·무기 하이브리드 전기 발광 소자 |
CN102064102B (zh) * | 2004-06-08 | 2013-10-30 | 桑迪士克公司 | 形成单层纳米结构的方法和器件以及包含这种单层的器件 |
US7968273B2 (en) | 2004-06-08 | 2011-06-28 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
US8563133B2 (en) | 2004-06-08 | 2013-10-22 | Sandisk Corporation | Compositions and methods for modulation of nanostructure energy levels |
US7776758B2 (en) | 2004-06-08 | 2010-08-17 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
KR100736521B1 (ko) * | 2004-06-09 | 2007-07-06 | 삼성전자주식회사 | 나노 결정 전기발광 소자 및 그의 제조방법 |
JP4522840B2 (ja) * | 2004-12-22 | 2010-08-11 | 独立行政法人科学技術振興機構 | フォトマスク、露光装置及び露光方法 |
US8845927B2 (en) * | 2006-06-02 | 2014-09-30 | Qd Vision, Inc. | Functionalized nanoparticles and method |
US8718437B2 (en) | 2006-03-07 | 2014-05-06 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
US9297092B2 (en) | 2005-06-05 | 2016-03-29 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
US8835941B2 (en) * | 2006-02-09 | 2014-09-16 | Qd Vision, Inc. | Displays including semiconductor nanocrystals and methods of making same |
WO2007143197A2 (en) | 2006-06-02 | 2007-12-13 | Qd Vision, Inc. | Light-emitting devices and displays with improved performance |
EP2041478B1 (en) | 2006-03-07 | 2014-08-06 | QD Vision, Inc. | An article including semiconductor nanocrystals |
US9874674B2 (en) | 2006-03-07 | 2018-01-23 | Samsung Electronics Co., Ltd. | Compositions, optical component, system including an optical component, devices, and other products |
US8849087B2 (en) * | 2006-03-07 | 2014-09-30 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
US9212056B2 (en) | 2006-06-02 | 2015-12-15 | Qd Vision, Inc. | Nanoparticle including multi-functional ligand and method |
JP2010508620A (ja) * | 2006-09-12 | 2010-03-18 | キユーデイー・ビジヨン・インコーポレーテツド | 所定のパターンを表示するために有用なエレクトロルミネセントディスプレイ |
WO2008063653A1 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
WO2008063658A2 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
WO2008063652A1 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Blue emitting semiconductor nanocrystals and compositions and devices including same |
US8836212B2 (en) | 2007-01-11 | 2014-09-16 | Qd Vision, Inc. | Light emissive printed article printed with quantum dot ink |
KR100853086B1 (ko) * | 2007-04-25 | 2008-08-19 | 삼성전자주식회사 | 나노결정-금속산화물 복합체 및 그의 제조방법 |
US7989153B2 (en) * | 2007-07-11 | 2011-08-02 | Qd Vision, Inc. | Method and apparatus for selectively patterning free standing quantum DOT (FSQDT) polymer composites |
WO2009014707A2 (en) | 2007-07-23 | 2009-01-29 | Qd Vision, Inc. | Quantum dot light enhancement substrate and lighting device including same |
US8128249B2 (en) | 2007-08-28 | 2012-03-06 | Qd Vision, Inc. | Apparatus for selectively backlighting a material |
KR101381360B1 (ko) * | 2007-09-17 | 2014-04-14 | 삼성전자주식회사 | 나노결정 3차원 가공방법 및 표시장치 |
JP5407241B2 (ja) * | 2007-09-28 | 2014-02-05 | 大日本印刷株式会社 | エレクトロルミネッセンス素子 |
US9525148B2 (en) | 2008-04-03 | 2016-12-20 | Qd Vision, Inc. | Device including quantum dots |
KR101995371B1 (ko) | 2008-04-03 | 2019-07-02 | 삼성 리서치 아메리카 인코포레이티드 | 양자점들을 포함하는 발광 소자 |
WO2009137053A1 (en) | 2008-05-06 | 2009-11-12 | Qd Vision, Inc. | Optical components, systems including an optical component, and devices |
EP2297762B1 (en) | 2008-05-06 | 2017-03-15 | Samsung Electronics Co., Ltd. | Solid state lighting devices including quantum confined semiconductor nanoparticles |
US9207385B2 (en) | 2008-05-06 | 2015-12-08 | Qd Vision, Inc. | Lighting systems and devices including same |
US8642991B2 (en) | 2008-11-11 | 2014-02-04 | Samsung Electronics Co., Ltd. | Photosensitive quantum dot, composition comprising the same and method of forming quantum dot-containing pattern using the composition |
KR101029299B1 (ko) * | 2008-12-30 | 2011-04-18 | 서울대학교산학협력단 | 유기 발광 소자 및 그 제조 방법 |
EP2424941B1 (en) | 2009-05-01 | 2017-05-31 | Nanosys, Inc. | Functionalized matrixes for dispersion of nanostructures |
CN101805606B (zh) * | 2010-02-22 | 2012-12-12 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种单分散近红外量子点的制备方法 |
KR101744904B1 (ko) * | 2010-03-22 | 2017-06-21 | 삼성디스플레이 주식회사 | 양자점-블록공중합체 하이브리드 및 이의 제조 방법과 분산 방법, 그리고 양자점 블록공중합체 하이브리드를 포함하는 발광 소자 및 이의 제조 방법 |
US9112161B2 (en) * | 2011-03-29 | 2015-08-18 | Inha-Industry Partnership Institute | Hybrid layer including oxide layer or organic layer and organic polymer layer and manufacturing method thereof |
KR101336831B1 (ko) * | 2012-02-01 | 2013-12-04 | 주식회사 엘엠에스 | 양자점를 포함하는 조성물 및 이를 이용한 장치 |
CN104105739B (zh) | 2012-02-03 | 2016-08-17 | 皇家飞利浦有限公司 | 具有高量子效率和稳定性的在基质中分散纳米颗粒的新材料和方法 |
US9139770B2 (en) | 2012-06-22 | 2015-09-22 | Nanosys, Inc. | Silicone ligands for stabilizing quantum dot films |
TWI596188B (zh) | 2012-07-02 | 2017-08-21 | 奈米系統股份有限公司 | 高度發光奈米結構及其製造方法 |
JP6065665B2 (ja) * | 2013-03-11 | 2017-01-25 | Jsr株式会社 | 感放射線性樹脂組成物、硬化膜、発光表示素子および発光層の形成方法 |
CN105247010B (zh) | 2013-03-14 | 2017-10-24 | 纳米系统公司 | 无溶剂的量子点交换方法 |
US11746290B2 (en) | 2013-09-26 | 2023-09-05 | Samsung Electronics Co., Ltd. | Nanocrystal particles and processes for synthesizing the same |
EP2853578B1 (en) | 2013-09-26 | 2017-08-30 | Samsung Electronics Co., Ltd | Nanocrystal particles and processes for synthesizing the same |
KR101525524B1 (ko) * | 2013-09-26 | 2015-06-03 | 삼성전자주식회사 | 나노 결정 입자 및 그의 합성 방법 |
US9778510B2 (en) * | 2013-10-08 | 2017-10-03 | Samsung Electronics Co., Ltd. | Nanocrystal polymer composites and production methods thereof |
JP6171927B2 (ja) * | 2013-12-25 | 2017-08-02 | Jsr株式会社 | 感放射線性樹脂組成物、硬化膜、発光素子および発光層の形成方法 |
KR102195513B1 (ko) * | 2013-12-24 | 2020-12-28 | 제이에스알 가부시끼가이샤 | 경화성 수지 조성물, 경화막, 발광 소자 및 발광층의 형성 방법 |
JP6427876B2 (ja) * | 2013-12-27 | 2018-11-28 | Jsr株式会社 | 感放射線性樹脂組成物、硬化膜、発光素子および発光層の形成方法 |
JP6171923B2 (ja) * | 2013-12-24 | 2017-08-02 | Jsr株式会社 | 硬化性樹脂組成物、硬化膜、発光素子、波長変換フィルムおよび発光層の形成方法 |
WO2015132673A2 (en) * | 2014-03-04 | 2015-09-11 | Nanoco Technologies, Ltd. | Methods for fabricating quantum dot polymer films |
JP6110421B2 (ja) * | 2014-03-28 | 2017-04-05 | トヨタ自動車株式会社 | フォノン散乱材、ナノコンポジット熱電材料及びその製造方法 |
TWI690585B (zh) * | 2014-08-11 | 2020-04-11 | 德商漢高股份有限及兩合公司 | 電激發光之經交聯奈米晶體薄膜 |
KR102092165B1 (ko) * | 2014-09-23 | 2020-03-23 | 동우 화인켐 주식회사 | 감광성 수지 조성물 |
KR101856615B1 (ko) * | 2014-10-14 | 2018-05-10 | 동우 화인켐 주식회사 | 감광성 수지 조성물 |
WO2016134820A1 (en) * | 2015-02-27 | 2016-09-01 | Merck Patent Gmbh | A photosensitive composition and color converting film |
KR102028439B1 (ko) * | 2015-03-19 | 2019-10-04 | 동우 화인켐 주식회사 | 자발광 감광성 수지 조성물, 이를 포함하는 컬러필터 및 화상표시장치 |
CN105062462A (zh) * | 2015-07-13 | 2015-11-18 | 京东方科技集团股份有限公司 | 发光复合物、发光材料、显示用基板及制备方法、显示装置 |
JP6497251B2 (ja) * | 2015-07-17 | 2019-04-10 | Jsr株式会社 | 硬化膜形成用組成物、硬化膜、発光表示素子、硬化膜の形成方法及び分散液 |
EP3147708B1 (en) | 2015-08-21 | 2018-11-28 | Samsung Electronics Co., Ltd. | Photosensitive compositions, preparation methods thereof and quantum dot polymer composite prepared therefrom |
EP3564750B1 (en) | 2015-08-21 | 2021-05-26 | Samsung Electronics Co., Ltd. | Photosensitive compositions, preparation methods thereof, and quantum dot polymer composite prepared therefrom |
KR102377521B1 (ko) * | 2015-09-11 | 2022-03-22 | 삼성디스플레이 주식회사 | 감광성 수지 조성물 및 이를 이용한 표시 장치 |
EP3163372B1 (en) | 2015-10-26 | 2020-04-29 | Samsung Electronics Co., Ltd. | Quantum dot having polymeric outer layer, photosensitive compositions including the same, and quantum dot polymer composite pattern produced therefrom |
FR3043838B1 (fr) | 2015-11-17 | 2018-06-08 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'une couche contenant des boites quantiques |
KR101970724B1 (ko) | 2016-06-14 | 2019-04-22 | 삼성에스디아이 주식회사 | 감광성 수지 조성물, 감광성 수지막 및 이를 이용한 컬러필터 |
US10544168B2 (en) * | 2016-06-15 | 2020-01-28 | Alliance For Sustainable Energy, Llc | Ligand-exchangeable nanoparticles and methods of making the same |
KR102601102B1 (ko) | 2016-08-09 | 2023-11-10 | 삼성전자주식회사 | 조성물, 이로부터 제조된 양자점-폴리머 복합체 및 이를 포함하는 소자 |
CN108110144B (zh) | 2016-11-25 | 2021-11-26 | 三星电子株式会社 | 包括量子点的发光器件和显示器件 |
JP6630754B2 (ja) * | 2017-02-16 | 2020-01-15 | 住友化学株式会社 | 硬化性樹脂組成物、硬化膜及び表示装置 |
JP7173593B2 (ja) | 2017-04-18 | 2022-11-16 | ザ・ユニバーシティ・オブ・シカゴ | 光活性無機リガンドでキャップされた無機ナノ結晶 |
US10759993B2 (en) | 2017-11-03 | 2020-09-01 | Samsung Electronics Co., Ltd. | Quantum dot composition, quantum dot polymer composite, and layered structure and electronic devices including the same |
US11046885B2 (en) | 2017-12-18 | 2021-06-29 | Samsung Electronics Co., Ltd. | Layered structures and electronic devices including the same |
CN109991813B (zh) | 2017-12-29 | 2022-06-21 | 财团法人工业技术研究院 | 感光型复合材料及使用其形成复合薄膜的方法 |
WO2019186846A1 (ja) * | 2018-03-28 | 2019-10-03 | シャープ株式会社 | 発光素子および表示装置 |
WO2019186847A1 (ja) * | 2018-03-28 | 2019-10-03 | シャープ株式会社 | 発光素子および発光素子の製造方法 |
EP3613829A1 (en) | 2018-08-23 | 2020-02-26 | Samsung Electronics Co., Ltd. | Quantum dot device and quantum dots |
EP3617292A1 (en) | 2018-08-30 | 2020-03-04 | Samsung Electronics Co., Ltd. | Electronic device including quantum dots |
US11149199B2 (en) | 2018-11-23 | 2021-10-19 | Samsung Display Co., Ltd. | Quantum dots, compositions and composites including the same, and electronic device including the same |
US11740495B2 (en) | 2018-11-29 | 2023-08-29 | Samsung Electronics Co., Ltd. | Quantum dots and devices including the same |
US11352558B2 (en) | 2019-06-18 | 2022-06-07 | Samsung Electronics Co., Ltd. | Quantum dots, a composition or composite including the same, and an electronic device including the same |
KR20210027211A (ko) | 2019-08-29 | 2021-03-10 | 삼성전자주식회사 | 양자점 및 이를 포함하는 소자 |
EP3809474B1 (en) | 2019-10-18 | 2023-07-19 | Samsung Electronics Co., Ltd. | Quantum dot light-emitting device and electronic device |
US11621403B2 (en) | 2019-10-25 | 2023-04-04 | Samsung Electronics Co., Ltd. | Core shell quantum dot and electronic device including the same |
EP3819354B1 (en) | 2019-11-08 | 2023-08-09 | Samsung Electronics Co., Ltd. | Inznp/znse/zns quantum dots and composite and display device including the same |
CN110989295A (zh) * | 2019-11-18 | 2020-04-10 | 中国科学院上海光学精密机械研究所 | 一种激光热模光刻图像反转胶及其光刻方法 |
KR20210076744A (ko) | 2019-12-16 | 2021-06-24 | 삼성전자주식회사 | 발광소자와 그 제조방법 |
KR20210115612A (ko) | 2020-03-13 | 2021-09-27 | 삼성전자주식회사 | 양자점 및 이를 포함한 복합체와 표시소자 |
KR20220003356A (ko) | 2020-07-01 | 2022-01-10 | 삼성전자주식회사 | 발광 소자 및 이를 포함하는 표시 장치 |
CN114516962B (zh) * | 2020-11-19 | 2024-04-26 | 北京鼎材科技有限公司 | 一种高透光敏树脂及使用其的彩色光敏树脂组合物 |
EP4394015A1 (en) * | 2021-12-29 | 2024-07-03 | BOE Technology Group Co., Ltd. | Quantum dot ligand, preparation method for quantum dot film layer, and quantum dot light emitting device |
CN117682957A (zh) * | 2022-08-22 | 2024-03-12 | 华为技术有限公司 | 配体化合物、复合物及其应用 |
JP2024054515A (ja) * | 2022-10-05 | 2024-04-17 | 信越化学工業株式会社 | 感光性樹脂組成物、感光性樹脂皮膜、感光性ドライフィルム、パターン形成方法、及び発光素子 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000228233A (ja) * | 1999-02-04 | 2000-08-15 | Fuji Photo Film Co Ltd | 色素吸着半導体微粒子および半導体微粒子への色素吸着方法ならびに光電変換素子および光電気化学電池 |
JP2000242002A (ja) * | 1999-02-23 | 2000-09-08 | Mitsubishi Chemicals Corp | 電子写真感光体 |
JP2005074552A (ja) * | 2003-08-29 | 2005-03-24 | Japan Science & Technology Agency | コア・シェル構造体からなる発光体、それを用いた分子マーカー、光記録媒体並びにそれらの調製方法 |
KR20050112938A (ko) * | 2004-05-28 | 2005-12-01 | 삼성전자주식회사 | 나노 결정의 다층 박막 제조 방법 및 이를 이용한유·무기 하이브리드 전기 발광 소자 |
KR20050117030A (ko) * | 2004-06-09 | 2005-12-14 | 삼성전자주식회사 | 나노 결정 전기발광 소자 및 그의 제조방법 |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2825558B2 (ja) * | 1989-10-25 | 1998-11-18 | 株式会社日立製作所 | 組成物及びこの樹脂組成物を使用した多層プリント回路板の製造方法 |
US5178959A (en) * | 1991-03-27 | 1993-01-12 | General Electric Company | Epoxy-functional fluorosilicones |
WO1993010564A1 (en) | 1991-11-22 | 1993-05-27 | The Regents Of The University Of California | Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers |
EP0622439A1 (en) * | 1993-04-20 | 1994-11-02 | Koninklijke Philips Electronics N.V. | Quantum sized activator doped semiconductor particles |
US5559057A (en) | 1994-03-24 | 1996-09-24 | Starfire Electgronic Development & Marketing Ltd. | Method for depositing and patterning thin films formed by fusing nanocrystalline precursors |
US5537000A (en) * | 1994-04-29 | 1996-07-16 | The Regents, University Of California | Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices |
US5789655A (en) * | 1994-05-13 | 1998-08-04 | The Regents Of The University Of California | Transgenic animals expressing artificial epitope-tagged proteins |
DE19502541A1 (de) * | 1995-01-27 | 1996-08-08 | Bosch Gmbh Robert | Elektrolumineszierendes System |
JPH10186426A (ja) * | 1996-10-24 | 1998-07-14 | Mitsui Chem Inc | 光重合性樹脂組成物 |
US6259506B1 (en) * | 1997-02-18 | 2001-07-10 | Spectra Science Corporation | Field activated security articles including polymer dispersed liquid crystals, and including micro-encapsulated field affected materials |
JPH1127621A (ja) | 1997-07-02 | 1999-01-29 | Sony Corp | 画像データ記録装置とその方法、および、画像データ記録再生装置 |
JP3885302B2 (ja) | 1997-07-30 | 2007-02-21 | 日産自動車株式会社 | 筒内直接噴射式火花点火エンジンの排気浄化装置 |
US6322901B1 (en) * | 1997-11-13 | 2001-11-27 | Massachusetts Institute Of Technology | Highly luminescent color-selective nano-crystalline materials |
US6139626A (en) | 1998-09-04 | 2000-10-31 | Nec Research Institute, Inc. | Three-dimensionally patterned materials and methods for manufacturing same using nanocrystals |
US6251303B1 (en) * | 1998-09-18 | 2001-06-26 | Massachusetts Institute Of Technology | Water-soluble fluorescent nanocrystals |
US6617583B1 (en) | 1998-09-18 | 2003-09-09 | Massachusetts Institute Of Technology | Inventory control |
PT1116036E (pt) | 1998-09-18 | 2004-10-29 | Massachusetts Inst Technology | Nanocristais semicondutores fluorescentes soluveis em agua |
JP4404489B2 (ja) * | 1998-09-18 | 2010-01-27 | マサチューセッツ インスティテュート オブ テクノロジー | 水溶性蛍光半導体ナノ結晶 |
DE59913725D1 (de) * | 1998-09-30 | 2006-09-14 | Siemens Ag | Verfahren und Anordnung zur rechnergestützten Ermittlung von Clustern zur Erkennung von Schaumbildung in einer Waschmaschine sowie Verfahren und Anordnung zur Erkennung von Schaumbildung in einer Waschmaschine |
US6569602B1 (en) * | 1998-10-05 | 2003-05-27 | E. I. Du Pont De Nemours And Company | Ionization radiation imageable photopolymer compositions |
US6306559B1 (en) * | 1999-01-26 | 2001-10-23 | Mitsubishi Chemical Corporation | Organic electroluminescent device comprising a patterned photosensitive composition and a method for producing same |
JP4410894B2 (ja) * | 2000-01-21 | 2010-02-03 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置 |
US6797412B1 (en) * | 2000-04-11 | 2004-09-28 | University Of Connecticut | Full color display structures using pseudomorphic cladded quantum dot nanophosphor thin films |
WO2002025374A2 (en) * | 2000-09-19 | 2002-03-28 | Shipley Company, L.L.C. | Antireflective composition |
US6649138B2 (en) * | 2000-10-13 | 2003-11-18 | Quantum Dot Corporation | Surface-modified semiconductive and metallic nanoparticles having enhanced dispersibility in aqueous media |
US20020110180A1 (en) * | 2001-02-09 | 2002-08-15 | Barney Alfred A. | Temperature-sensing composition |
JP2002246642A (ja) * | 2001-02-13 | 2002-08-30 | Canon Inc | 窒化物系化合物半導体発光素子 |
US7153703B2 (en) | 2001-05-14 | 2006-12-26 | Board Of Trustees Of The University Of Arkansas N. A. | Synthesis of stable colloidal nanocrystals using organic dendrons |
ATE457373T1 (de) | 2001-07-30 | 2010-02-15 | Univ Arkansas | Verfahren zur herstellung von kolloidale nanokristalle in nicht koordinierenden lösungsmitteln |
JP3977038B2 (ja) * | 2001-08-27 | 2007-09-19 | 株式会社半導体エネルギー研究所 | レーザ照射装置およびレーザ照射方法 |
US20030073042A1 (en) * | 2001-10-17 | 2003-04-17 | Cernigliaro George J. | Process and materials for formation of patterned films of functional materials |
JP4100165B2 (ja) * | 2002-01-28 | 2008-06-11 | Jsr株式会社 | 感光性誘電体形成用組成物、誘電体および電子部品 |
US20040007169A1 (en) * | 2002-01-28 | 2004-01-15 | Mitsubishi Chemical Corporation | Semiconductor nanoparticles and thin film containing the same |
EP2902464B1 (en) * | 2002-03-29 | 2019-09-18 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
US7534488B2 (en) * | 2003-09-10 | 2009-05-19 | The Regents Of The University Of California | Graded core/shell semiconductor nanorods and nanorod barcodes |
US7098525B2 (en) * | 2003-05-08 | 2006-08-29 | 3M Innovative Properties Company | Organic polymers, electronic devices, and methods |
KR100965373B1 (ko) * | 2003-06-10 | 2010-06-22 | 삼성전자주식회사 | 감광성 금속 나노입자 및 이를 이용한 도전성 패턴형성방법 |
US7879696B2 (en) * | 2003-07-08 | 2011-02-01 | Kovio, Inc. | Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom |
KR100697511B1 (ko) * | 2003-10-21 | 2007-03-20 | 삼성전자주식회사 | 광경화성 반도체 나노결정, 반도체 나노결정 패턴형성용 조성물 및 이들을 이용한 반도체 나노결정의 패턴 형성 방법 |
-
2003
- 2003-10-21 KR KR1020030073338A patent/KR100697511B1/ko active IP Right Grant
-
2004
- 2004-04-01 US US10/814,264 patent/US7199393B2/en not_active Expired - Lifetime
- 2004-10-06 EP EP17169767.5A patent/EP3240047B1/en active Active
- 2004-10-06 EP EP04256185.2A patent/EP1526584B1/en active Active
- 2004-10-20 JP JP2004305592A patent/JP2005128539A/ja active Pending
- 2004-10-21 CN CN200410102383XA patent/CN1655057B/zh active Active
-
2006
- 2006-03-20 US US11/378,482 patent/US7476487B2/en active Active
-
2008
- 2008-07-17 US US12/219,231 patent/US8911883B2/en not_active Expired - Lifetime
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2010
- 2010-09-21 JP JP2010210908A patent/JP2011046951A/ja not_active Withdrawn
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000228233A (ja) * | 1999-02-04 | 2000-08-15 | Fuji Photo Film Co Ltd | 色素吸着半導体微粒子および半導体微粒子への色素吸着方法ならびに光電変換素子および光電気化学電池 |
JP2000242002A (ja) * | 1999-02-23 | 2000-09-08 | Mitsubishi Chemicals Corp | 電子写真感光体 |
JP2005074552A (ja) * | 2003-08-29 | 2005-03-24 | Japan Science & Technology Agency | コア・シェル構造体からなる発光体、それを用いた分子マーカー、光記録媒体並びにそれらの調製方法 |
KR20050112938A (ko) * | 2004-05-28 | 2005-12-01 | 삼성전자주식회사 | 나노 결정의 다층 박막 제조 방법 및 이를 이용한유·무기 하이브리드 전기 발광 소자 |
KR20050117030A (ko) * | 2004-06-09 | 2005-12-14 | 삼성전자주식회사 | 나노 결정 전기발광 소자 및 그의 제조방법 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10983432B2 (en) | 2015-08-24 | 2021-04-20 | Samsung Electronics Co., Ltd. | Photosensitive compositions, preparation methods thereof, quantum dot polymer composite prepared therefrom |
US11835856B2 (en) | 2015-08-24 | 2023-12-05 | Samsung Electronics Co., Ltd. | Photosensitive compositions, preparation methods thereof, quantum dot polymer composite prepared therefrom |
US10203599B2 (en) | 2015-10-22 | 2019-02-12 | Samsung Electronics Co., Ltd. | Photosensitive compositions, quantum dot polymer composite pattern prepared therefrom, and electronic devices including the same |
US11126080B2 (en) | 2015-10-22 | 2021-09-21 | Samsung Electronics Co., Ltd. | Photosensitive compositions, quantum dot polymer composite pattern prepared therefrom, and electronic devices including the same |
US11815800B2 (en) | 2015-10-22 | 2023-11-14 | Samsung Electronics Co., Ltd. | Photosensitive compositions, quantum dot polymer composite pattern prepared therefrom, and electronic devices including the same |
Also Published As
Publication number | Publication date |
---|---|
US7199393B2 (en) | 2007-04-03 |
KR20050038120A (ko) | 2005-04-27 |
US20060199039A1 (en) | 2006-09-07 |
EP1526584A2 (en) | 2005-04-27 |
JP2005128539A (ja) | 2005-05-19 |
US8758864B2 (en) | 2014-06-24 |
CN1655057A (zh) | 2005-08-17 |
CN1655057B (zh) | 2010-12-08 |
EP3240047A1 (en) | 2017-11-01 |
US20080290797A1 (en) | 2008-11-27 |
EP1526584A3 (en) | 2009-09-09 |
EP1526584B1 (en) | 2017-06-14 |
US8911883B2 (en) | 2014-12-16 |
US20050161666A1 (en) | 2005-07-28 |
US7476487B2 (en) | 2009-01-13 |
EP3240047B1 (en) | 2022-07-06 |
US20130011635A1 (en) | 2013-01-10 |
JP2011046951A (ja) | 2011-03-10 |
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