JP6193796B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6193796B2 JP6193796B2 JP2014079863A JP2014079863A JP6193796B2 JP 6193796 B2 JP6193796 B2 JP 6193796B2 JP 2014079863 A JP2014079863 A JP 2014079863A JP 2014079863 A JP2014079863 A JP 2014079863A JP 6193796 B2 JP6193796 B2 JP 6193796B2
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- Prior art keywords
- film
- oxide
- oxide semiconductor
- insulating film
- semiconductor film
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- 239000004065 semiconductor Substances 0.000 title claims description 428
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- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
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Description
本実施の形態では、本発明の一態様である半導体装置及びその作製方法について図面を参照して説明する。
ここで、酸化物半導体膜における金属元素の拡散メカニズムについて計算した結果を以下に示す。
次に、多層膜20のバンド構造について、図3を用いて説明する。
本実施の形態に示すトランジスタ60において、多層膜20の変形例を図14を用いて説明する。
本実施の形態に示すトランジスタ60に設けられる一対の電極21、22として、銅、アルミニウム、またはモリブデン単体若しくは合金等の酸素と結合しやすい導電材料を用いることが好ましい。この結果、多層膜20に含まれる酸素と一対の電極21、22に含まれる導電材料とが結合し、多層膜20において、酸素欠損領域が形成される。また、多層膜20に一対の電極21、22を形成する導電材料の構成元素の一部が混入する場合もある。これらの結果、多層膜20において、一対の電極21、22と接する領域近傍に、低抵抗領域が形成される。低抵抗領域は、一対の電極21、22に接し、且つゲート絶縁膜17と、一対の電極21、22の間に形成される。低抵抗領域は、導電性が高いため、多層膜20と一対の電極21、22との接触抵抗を低減することが可能であり、トランジスタのオン電流を増大させることが可能である。
本実施の形態に示すトランジスタ60において、図15に示すように、トランジスタ60上に、酸化物絶縁膜24及び窒化物絶縁膜25が積層される保護膜26aを設けることができる。図15に示すトランジスタは、酸化物半導体膜18上に酸化物膜19を有するため、当該酸化物膜19が、酸化物絶縁膜24を形成する際の保護膜として機能する。この結果、酸化物絶縁膜24を形成する際、酸化物半導体膜18がプラズマに曝されず、比較的高い電力を用いるプラズマCVD法で酸化物絶縁膜24を形成する際に生じるプラズマダメージを低減できる。
なお、本実施の形態では、ゲート電極15が基板11と多層膜20の間に設けられるボトムゲート構造のトランジスタを用いて説明したが、図32(A)に示すように、トップゲート構造のトランジスタとすることができる。即ち、多層膜20上に、一対の電極21、22を有し、一対の電極21、22上にゲート絶縁膜27を有し、ゲート絶縁膜27上にゲート電極15aを有するトランジスタ62とすることができる。なお、基板11と多層膜20の間には、多層膜20に接する酸化物絶縁膜17cと、酸化物絶縁膜17c及び一対の電極21、22に接する窒化物絶縁膜17aとが設けられる。さらには、図32(B)に示すように、ゲート電極15と、ゲート電極15上のゲート絶縁膜17と、ゲート絶縁膜17上の多層膜20と、多層膜20上の一対の電極21、22と、多層膜20及び一対の電極21、22上の保護膜26と、保護膜26上のゲート電極15aとを有するデュアルゲート構造のトランジスタ64とすることができる。
本実施の形態では、一対の電極21、22を構成する金属元素の拡散を防ぐことが可能なトランジスタを有する半導体装置及びその作製方法について、図2、図16、及び図17を用いて説明する。
本実施の形態では、ゲート電極15が基板11と多層膜20の間に設けられるボトムゲート構造のトランジスタを用いて説明したが、図33(A)に示すように、トップゲート構造のトランジスタとすることができる。即ち、多層膜20上に、一対の電極21、22を有し、一対の電極21、22上に保護膜43、44を有し、一対の電極21、22及び保護膜43、44上にゲート絶縁膜27を有し、ゲート絶縁膜27上にゲート電極15aを有するトランジスタ72とすることができる。なお、基板11と多層膜20の間には、多層膜20に接する酸化物絶縁膜17cと、酸化物絶縁膜17c及び一対の電極21、22に接する窒化物絶縁膜17aとが設けられる。さらには、図33(B)に示すように、ゲート電極15と、ゲート電極15上のゲート絶縁膜17と、ゲート絶縁膜17上の多層膜20と、多層膜20上の一対の電極21、22と、一対の電極21、22上の保護膜43、44と、多層膜20、一対の電極21、22、及び保護膜43、44上の保護膜26と、保護膜26上のゲート電極15aとを有するデュアルゲート構造のトランジスタ74とすることができる。
本実施の形態では、本発明の一態様である半導体装置について、図面を用いて説明する。なお、本実施の形態では、表示装置を例にして本発明の一態様である半導体装置を説明する。
本実施の形態では、上記実施の形態で説明した半導体装置に含まれているトランジスタにおいて、酸化物半導体膜に適用可能な一態様について説明する。
単結晶酸化物半導体膜は、不純物濃度が低く、欠陥準位密度が小さい(酸素欠損量が少ない)酸化物半導体膜である。そのため、キャリア密度を低くすることができる。従って、単結晶酸化物半導体膜を用いたトランジスタは、ノーマリーオンの電気特性になることが少ない。また、単結晶酸化物半導体膜は、不純物濃度が低く、欠陥準位密度が小さいため、キャリアトラップが少なくなる場合がある。従って、単結晶酸化物半導体膜を用いたトランジスタは、電気特性の変動が小さく、信頼性の高いトランジスタとなる。
多結晶酸化物半導体膜は、TEMによる観察像で、結晶粒を確認することができる。多結晶酸化物半導体膜に含まれる結晶粒は、例えば、TEMによる観察像で、2nm以上300nm以下、3nm以上100nm以下または5nm以上50nm以下の粒径であることが多い。また、多結晶酸化物半導体膜は、TEMによる観察像で、粒界を確認できる場合がある。
微結晶酸化物半導体膜は、TEMによる観察像では、明確に結晶部を確認することができない場合がある。微結晶酸化物半導体膜に含まれる結晶部は、1nm以上100nm以下、または1nm以上10nm以下の大きさであることが多い。特に、1nm以上10nm以下、または1nm以上3nm以下の微結晶であるナノ結晶(nc:nanocrystal)を有する酸化物半導体膜を、nc−OS(nanocrystalline Oxide Semiconductor)膜と呼ぶ。また、nc−OS膜は、例えば、TEMによる観察像では、結晶粒界を明確に確認できない場合がある。
上記実施の形態で開示された酸化物半導体膜はスパッタリングにより形成することができるが、他の方法、例えば、熱CVD法により形成してもよい。熱CVD法の例としてMOCVD(Metal Organic Chemical Vapor Deposition)法やALD(Atomic Layer Deposition)法を使っても良い。
Claims (5)
- ゲート電極と、
前記ゲート電極上方のゲート絶縁膜と、
前記ゲート絶縁膜上方の、In、M(Mは、Ga、Y、Zr、La、Ce、またはNdを表す)、及びZnを含む酸化物半導体膜と、
前記酸化物半導体膜上方の、銅を含む一対の電極と、
前記酸化物半導体膜と前記一対の電極との間に設けられた、In、M(Mは、Ga、Y、Zr、La、Ce、またはNdを表す)、及びZnを含む酸化物膜と、を有し、
前記酸化物半導体膜は、チャネルとして機能する領域を有し、
前記一対の電極は、前記酸化物膜を介して前記酸化物半導体膜と電気的に接続され、
前記酸化物膜は、非単結晶構造を有し、
前記酸化物膜は、c軸配向した結晶を有し、
前記酸化物膜のInに対するMの原子数比は、前記酸化物半導体膜のInに対するMの原子数比よりも大きく、
前記酸化物膜におけるIn、M、及びZnの原子数比は、InよりもMが大きく、MよりもZnが大きいことを特徴とする半導体装置。 - ゲート電極と、
前記ゲート電極上方のゲート絶縁膜と、
前記ゲート絶縁膜上方の、In、Ga、及びZnを含む酸化物半導体膜と、
前記酸化物半導体膜上方の、銅を含む一対の電極と、
前記酸化物半導体膜と前記一対の電極との間に設けられた、In、Ga、及びZnを含む酸化物膜と、を有し、
前記酸化物半導体膜は、チャネルとして機能する領域を有し、
前記一対の電極は、前記酸化物膜を介して前記酸化物半導体膜と電気的に接続され、
前記酸化物膜は、非単結晶構造を有し、
前記酸化物膜は、c軸配向した結晶を有し、
前記酸化物膜のInに対するGaの原子数比は、前記酸化物半導体膜のInに対するGaの原子数比よりも大きく、
前記酸化物膜におけるIn、Ga、及びZnの原子数比は、InよりもGaが大きく、GaよりもZnが大きいことを特徴とする半導体装置。 - ゲート電極と、
前記ゲート電極上方のゲート絶縁膜と、
前記ゲート絶縁膜上方の酸化物半導体膜と、
前記酸化物半導体膜上方の、銅を含む一対の電極と、
前記酸化物半導体膜と前記一対の電極との間に設けられた酸化物膜と、を有し、
前記酸化物半導体膜は、チャネルとして機能する領域を有し、
前記一対の電極は、前記酸化物膜を介して前記酸化物半導体膜と電気的に接続され、
前記酸化物膜は、非単結晶構造を有し、
前記酸化物膜は、c軸配向した結晶を有し、
前記酸化物膜の伝導帯の下端のエネルギーは、前記酸化物半導体膜の伝導帯の下端のエネルギーよりも真空準位に近く、
前記酸化物膜の伝導帯の下端のエネルギーと、前記酸化物半導体膜の伝導帯の下端のエネルギーとの差は0.05eV以上2eV以下であることを特徴とする半導体装置。 - ゲート電極と、
前記ゲート電極上方のゲート絶縁膜と、
前記ゲート絶縁膜上方の、In、Ga、及びZnを含む酸化物半導体膜と、
前記酸化物半導体膜上方の、銅を含む一対の電極と、
前記酸化物半導体膜と前記一対の電極との間に設けられた、In、Ga、及びZnを含む酸化物膜と、を有し、
前記酸化物半導体膜は、チャネルとして機能する領域を有し、
前記一対の電極は、前記酸化物膜を介して前記酸化物半導体膜と電気的に接続され、
前記酸化物膜は、非単結晶構造を有し、
前記酸化物膜は、c軸配向した結晶を有し、
前記酸化物膜の伝導帯の下端のエネルギーは、前記酸化物半導体膜の伝導帯の下端のエネルギーよりも真空準位に近く、
前記酸化物膜の伝導帯の下端のエネルギーと、前記酸化物半導体膜の伝導帯の下端のエネルギーとの差は0.05eV以上2eV以下であることを特徴とする半導体装置。 - 請求項1乃至4のいずれか一において、
前記酸化物半導体膜に含まれるシリコンの濃度が2×10 18 atoms/cm 3 以下である領域を含むことを特徴とする半導体装置。
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KR102211651B1 (ko) | 2021-02-04 |
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US20140306221A1 (en) | 2014-10-16 |
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JP7202436B2 (ja) | 2023-01-11 |
KR20220019733A (ko) | 2022-02-17 |
KR20230074457A (ko) | 2023-05-30 |
KR20230174206A (ko) | 2023-12-27 |
JP2020191453A (ja) | 2020-11-26 |
JP6733012B2 (ja) | 2020-07-29 |
JP2024069258A (ja) | 2024-05-21 |
JP2022009338A (ja) | 2022-01-14 |
JP6363279B2 (ja) | 2018-07-25 |
KR20210013751A (ko) | 2021-02-05 |
JP2014220493A (ja) | 2014-11-20 |
JP6549290B2 (ja) | 2019-07-24 |
KR20220110707A (ko) | 2022-08-09 |
KR102536313B1 (ko) | 2023-05-26 |
KR102358482B1 (ko) | 2022-02-08 |
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