JP6017138B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP6017138B2 JP6017138B2 JP2012001751A JP2012001751A JP6017138B2 JP 6017138 B2 JP6017138 B2 JP 6017138B2 JP 2012001751 A JP2012001751 A JP 2012001751A JP 2012001751 A JP2012001751 A JP 2012001751A JP 6017138 B2 JP6017138 B2 JP 6017138B2
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- 239000004065 semiconductor Substances 0.000 title claims description 175
- 238000000034 method Methods 0.000 title claims description 60
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 230000015654 memory Effects 0.000 claims description 92
- 239000004020 conductor Substances 0.000 claims description 71
- 239000000758 substrate Substances 0.000 claims description 40
- 239000003990 capacitor Substances 0.000 claims description 39
- 239000013078 crystal Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 30
- 230000015572 biosynthetic process Effects 0.000 claims description 19
- 238000004544 sputter deposition Methods 0.000 claims description 19
- 230000007547 defect Effects 0.000 claims description 6
- 206010021143 Hypoxia Diseases 0.000 claims 2
- 239000010410 layer Substances 0.000 description 274
- 239000012535 impurity Substances 0.000 description 36
- 238000005530 etching Methods 0.000 description 22
- 229910052581 Si3N4 Inorganic materials 0.000 description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 17
- 229910052802 copper Inorganic materials 0.000 description 17
- 239000010949 copper Substances 0.000 description 17
- 239000011229 interlayer Substances 0.000 description 17
- 150000002736 metal compounds Chemical group 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 13
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- 229910007541 Zn O Inorganic materials 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000000206 photolithography Methods 0.000 description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 10
- 239000011810 insulating material Substances 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 10
- 229910052721 tungsten Inorganic materials 0.000 description 10
- 239000010937 tungsten Substances 0.000 description 10
- 229910044991 metal oxide Inorganic materials 0.000 description 9
- 150000004706 metal oxides Chemical class 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- 229910052715 tantalum Inorganic materials 0.000 description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 229910000881 Cu alloy Inorganic materials 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- VUFNLQXQSDUXKB-DOFZRALJSA-N 2-[4-[4-[bis(2-chloroethyl)amino]phenyl]butanoyloxy]ethyl (5z,8z,11z,14z)-icosa-5,8,11,14-tetraenoate Chemical compound CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(=O)OCCOC(=O)CCCC1=CC=C(N(CCCl)CCCl)C=C1 VUFNLQXQSDUXKB-DOFZRALJSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910019092 Mg-O Inorganic materials 0.000 description 3
- 229910019395 Mg—O Inorganic materials 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 150000004678 hydrides Chemical class 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- AKJVMGQSGCSQBU-UHFFFAOYSA-N zinc azanidylidenezinc Chemical compound [Zn++].[N-]=[Zn].[N-]=[Zn] AKJVMGQSGCSQBU-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/10—Arrangements for interconnecting storage elements electrically, e.g. by wiring for interconnecting capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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Description
図1は、半導体記憶装置の構成例を示す図である。図1に示す半導体記憶装置は、単結晶半導体材料を含む基板10の一部を有する駆動回路100と、駆動回路100上に設けられた多層配線層20と、多層配線層20上に設けられ、且つマトリクス状に配設された複数のメモリセル300を含むメモリセルアレイ層30とを有する。
以下では、駆動回路100を構成する、単結晶半導体材料を含む基板10を用いて形成されるトランジスタの一例について、図2を参照して説明する。
次に、トランジスタ160の作製方法の一例について、図3を参照して説明する。なお、トランジスタ160は以下の方法に限定されず、公知の技術により作製できる。
以下では、配線層20a、20bの構成例について、図4を参照して説明する。
次に、配線層20a、20bの作製方法の一例について、図5を参照して説明する。
以下では、メモリセル300の構成例について、図6を参照して説明する。
次に、メモリセル300の作製方法の一例について、図7を参照して説明する。
本明細書で開示される半導体記憶装置は、単結晶半導体材料を含む基板の一部を有する駆動回路と、当該駆動回路上に設けられる多層配線層と、当該多層配線層上に設けられるメモリセルアレイ層とを有する。すなわち、本明細書で開示される半導体記憶装置においては、駆動回路と、メモリセルアレイとが重畳して設けられる。したがって、単結晶半導体材料を含む基板に駆動回路及びメモリセルアレイを同一平面に設ける場合と比較して、当該半導体記憶装置の集積度を高めることが可能となる。
以下では、上述した半導体記憶装置の利用例について図8を参照して説明する。
20 多層配線層
20a 配線層
20b 配線層
30 メモリセルアレイ層
100 駆動回路
102 保護層
104 半導体領域
106 素子分離絶縁層
108 ゲート絶縁膜
110 ゲート電極
112 絶縁層
114a 不純物領域
114b 不純物領域
116 チャネル領域
118 サイドウォール絶縁層
120a 高濃度不純物領域
120b 高濃度不純物領域
122 金属層
124a 金属化合物領域
124b 金属化合物領域
126 層間絶縁層
128 層間絶縁層
130a ソース電極
130b ドレイン電極
160 トランジスタ
200 配線
200a 配線
200b 配線
200c 配線
201 コンタクトプラグ
201a コンタクトプラグ
201b コンタクトプラグ
202 絶縁層
203 絶縁層
204a 開口部
204b 開口部
205 導電材料を含む層
206a 溝
206b 溝
207 導電材料を含む層
300 メモリセル
301 トランジスタ
302 キャパシタ
303 絶縁層
401 CPU
402 メインメモリ
403 クロックコントローラ
404 キャッシュコントローラ
405 シリアルインターフェース
406 I/Oポート
407 端子
408 インターフェース
409 キャッシュメモリ
3000 メモリセル
3001 導電材料を含む層
3002 絶縁層
3003 絶縁層
3004 導電材料を含む層
3005 導電材料を含む層
3011 導電材料を含む層
3012 酸化物半導体層
3013 導電材料を含む層
3014 導電材料を含む層
3015 絶縁層
3016 導電材料を含む層
3020 導電材料を含む層
7031 筐体
7032 筐体
7033 表示部
7034 表示部
7035 マイクロホン
7036 スピーカー
7037 操作キー
7038 スタイラス
7041 筐体
7042 表示部
7043 音声入力部
7044 音声出力部
7045 操作キー
7046 受光部
7051 筐体
7052 表示部
7053 操作キー
Claims (10)
- 駆動回路と、
前記駆動回路上方の配線層と、
前記配線層上方のメモリセルと、を有し、
前記配線層は、第1の配線を有し、
前記駆動回路は、前記第1の配線を介して前記メモリセルと電気的に接続され、
前記メモリセルは、トランジスタと、前記トランジスタのゲート電極上方の絶縁層と、前記絶縁層上方のキャパシタと、を有し、
前記トランジスタは、上面がソース又はドレインの一方として機能する導電材料を含む層と接し且つ下面がソース又はドレインの他方として機能する導電材料を含む層と接する酸化物半導体層にチャネル形成領域を有し、
前記酸化物半導体層は、酸素欠損による欠陥を低減する工程を経て形成されたものであり、
前記酸化物半導体層は、c軸が前記酸化物半導体層の形成面に対して垂直な方向に沿う結晶を有し、
前記トランジスタのソース又はドレインの一方は、前記キャパシタの第1の電極と電気的に接続されることを特徴とする半導体装置の作製方法。 - 駆動回路と、
前記駆動回路上方の配線層と、
前記配線層上方のメモリセルと、を有し、
前記配線層は、第1の配線を有し、
前記駆動回路は、前記第1の配線を介して前記メモリセルと電気的に接続され、
前記メモリセルは、トランジスタと、キャパシタと、を有し、
前記トランジスタは、上面がソース又はドレインの一方として機能する導電材料を含む層と接し且つ下面がソース又はドレインの他方として機能する導電材料を含む層と接する酸化物半導体層にチャネル形成領域を有し、
前記酸化物半導体層は、酸素欠損による欠陥を低減する工程を経て形成されたものであり、
前記酸化物半導体層は、c軸が前記酸化物半導体層の形成面に対して垂直な方向に沿う結晶を有し、
前記トランジスタのソース又はドレインの一方は、前記キャパシタの第1の電極と電気的に接続されることを特徴とする半導体装置の作製方法。 - 駆動回路と、
前記駆動回路上方の配線層と、
前記配線層上方のメモリセルと、を有し、
前記配線層は、第1の配線を有し、
前記駆動回路は、前記第1の配線を介して前記メモリセルと電気的に接続され、
前記メモリセルは、トランジスタと、前記トランジスタのゲート電極上方の絶縁層と、前記絶縁層上方のキャパシタと、を有し、
前記トランジスタは、上面がソース又はドレインの一方として機能する導電材料を含む層と接し且つ下面がソース又はドレインの他方として機能する導電材料を含む層と接する酸化物半導体層にチャネル形成領域を有し、
前記酸化物半導体層は、スパッタリング法を用いて形成されたものであり、
前記酸化物半導体層は、c軸が前記酸化物半導体層の形成面に対して垂直な方向に沿う結晶を有し、
前記トランジスタのソース又はドレインの一方は、前記キャパシタの第1の電極と電気的に接続されることを特徴とする半導体装置の作製方法。 - 駆動回路と、
前記駆動回路上方の配線層と、
前記配線層上方のメモリセルと、を有し、
前記配線層は、第1の配線を有し、
前記駆動回路は、前記第1の配線を介して前記メモリセルと電気的に接続され、
前記メモリセルは、トランジスタと、キャパシタと、を有し、
前記トランジスタは、上面がソース又はドレインの一方として機能する導電材料を含む層と接し且つ下面がソース又はドレインの他方として機能する導電材料を含む層と接する酸化物半導体層にチャネル形成領域を有し、
前記酸化物半導体層は、スパッタリング法を用いて形成されたものであり、
前記酸化物半導体層は、c軸が前記酸化物半導体層の形成面に対して垂直な方向に沿う結晶を有し、
前記トランジスタのソース又はドレインの一方は、前記キャパシタの第1の電極と電気的に接続されることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項4のいずれか一項において、
前記キャパシタは、溝部に設けられていることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項4のいずれか一項において、
前記キャパシタの第1の電極は、前記キャパシタの第2の電極の下面と対向する領域と、前記キャパシタの第2の電極の側面と対向する領域と、を有することを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項4のいずれか一項において、
前記キャパシタの誘電体は、凹形を有することを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項7のいずれか一項において、
前記酸化物半導体層は、高純度化されていることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項8のいずれか一項において、
前記酸化物半導体層は、i型化又は実質的にi型化されていることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項9のいずれか一項において、
前記駆動回路は、単結晶半導体材料を含む基板に形成されていることを特徴とする半導体装置の作製方法。
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Also Published As
Publication number | Publication date |
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TW201717358A (zh) | 2017-05-16 |
TWI657565B (zh) | 2019-04-21 |
TW201820591A (zh) | 2018-06-01 |
JP2022082650A (ja) | 2022-06-02 |
JP2018110267A (ja) | 2018-07-12 |
JP2017011299A (ja) | 2017-01-12 |
US20160247809A1 (en) | 2016-08-25 |
US20190198501A1 (en) | 2019-06-27 |
TW201238038A (en) | 2012-09-16 |
JP2012160718A (ja) | 2012-08-23 |
US20120182790A1 (en) | 2012-07-19 |
US8811064B2 (en) | 2014-08-19 |
US9786668B2 (en) | 2017-10-10 |
US10763261B2 (en) | 2020-09-01 |
JP2020053705A (ja) | 2020-04-02 |
US20240049449A1 (en) | 2024-02-08 |
KR101728210B1 (ko) | 2017-04-18 |
TWI619230B (zh) | 2018-03-21 |
US11139301B2 (en) | 2021-10-05 |
US20140328106A1 (en) | 2014-11-06 |
US20170373068A1 (en) | 2017-12-28 |
KR20120090787A (ko) | 2012-08-17 |
US9337345B2 (en) | 2016-05-10 |
TWI572009B (zh) | 2017-02-21 |
TWI492368B (zh) | 2015-07-11 |
TW201530740A (zh) | 2015-08-01 |
KR20140131901A (ko) | 2014-11-14 |
US20200350316A1 (en) | 2020-11-05 |
JP2023178501A (ja) | 2023-12-14 |
US20210375876A1 (en) | 2021-12-02 |
US10249626B2 (en) | 2019-04-02 |
US11805637B2 (en) | 2023-10-31 |
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