JP5977051B2 - 半導体パッケージ、半導体装置及び半導体パッケージの製造方法 - Google Patents

半導体パッケージ、半導体装置及び半導体パッケージの製造方法 Download PDF

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Publication number
JP5977051B2
JP5977051B2 JP2012063947A JP2012063947A JP5977051B2 JP 5977051 B2 JP5977051 B2 JP 5977051B2 JP 2012063947 A JP2012063947 A JP 2012063947A JP 2012063947 A JP2012063947 A JP 2012063947A JP 5977051 B2 JP5977051 B2 JP 5977051B2
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Prior art keywords
insulating layer
metal plate
semiconductor chip
layer
semiconductor package
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Japanese (ja)
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JP2013197382A (ja
JP2013197382A5 (enExample
Inventor
立岩 昭彦
昭彦 立岩
田中 正人
正人 田中
六川 昭雄
昭雄 六川
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2012063947A priority Critical patent/JP5977051B2/ja
Priority to KR1020130023263A priority patent/KR101998150B1/ko
Priority to US13/833,036 priority patent/US8994193B2/en
Priority to EP13160222.9A priority patent/EP2654388B1/en
Publication of JP2013197382A publication Critical patent/JP2013197382A/ja
Publication of JP2013197382A5 publication Critical patent/JP2013197382A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in printed circuit boards [PCB], e.g. insert-mounted components [IMC]
    • H05K1/185—Printed circuits structurally associated with non-printed electric components associated with components mounted in printed circuit boards [PCB], e.g. insert-mounted components [IMC] associated with components encapsulated in the insulating substrate of the PCBs; associated with components incorporated in internal layers of multilayer circuit boards
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4682—Manufacture of core-less build-up multilayer circuits on a temporary carrier or on a metal foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/06—Thermal details
    • H05K2201/068—Thermal details wherein the coefficient of thermal expansion is important
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/14—Related to the order of processing steps
    • H05K2203/1461—Applying or finishing the circuit pattern after another process, e.g. after filling of vias with conductive paste, after making printed resistors
    • H05K2203/1469—Circuit made after mounting or encapsulation of the components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4688—Composite multilayer circuits, i.e. comprising insulating layers having different properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/099—Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9413—Dispositions of bond pads on encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/142—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations exposing the passive side of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/10—Configurations of laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/271—Configurations of stacked chips the chips having passive surfaces facing each other, i.e. in a back-to-back arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2012063947A 2012-03-21 2012-03-21 半導体パッケージ、半導体装置及び半導体パッケージの製造方法 Active JP5977051B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012063947A JP5977051B2 (ja) 2012-03-21 2012-03-21 半導体パッケージ、半導体装置及び半導体パッケージの製造方法
KR1020130023263A KR101998150B1 (ko) 2012-03-21 2013-03-05 반도체 패키지, 반도체 장치 및 반도체 패키지의 제조 방법
US13/833,036 US8994193B2 (en) 2012-03-21 2013-03-15 Semiconductor package including a metal plate, semiconductor chip, and wiring structure, semiconductor apparatus and method for manufacturing semiconductor package
EP13160222.9A EP2654388B1 (en) 2012-03-21 2013-03-20 Semiconductor package, semiconductor apparatus and method for manufacturing semiconductor package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012063947A JP5977051B2 (ja) 2012-03-21 2012-03-21 半導体パッケージ、半導体装置及び半導体パッケージの製造方法

Publications (3)

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JP2013197382A JP2013197382A (ja) 2013-09-30
JP2013197382A5 JP2013197382A5 (enExample) 2015-02-19
JP5977051B2 true JP5977051B2 (ja) 2016-08-24

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US (1) US8994193B2 (enExample)
EP (1) EP2654388B1 (enExample)
JP (1) JP5977051B2 (enExample)
KR (1) KR101998150B1 (enExample)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101947722B1 (ko) * 2012-06-07 2019-04-25 삼성전자주식회사 적층 반도체 패키지 및 이의 제조방법
JP5662551B1 (ja) * 2013-12-20 2015-01-28 新光電気工業株式会社 配線基板、半導体装置及び配線基板の製造方法
CN103730379A (zh) * 2014-01-16 2014-04-16 苏州晶方半导体科技股份有限公司 芯片封装方法及结构
JP6031060B2 (ja) 2014-03-31 2016-11-24 信越化学工業株式会社 半導体装置、積層型半導体装置、封止後積層型半導体装置、及びこれらの製造方法
JP6031059B2 (ja) * 2014-03-31 2016-11-24 信越化学工業株式会社 半導体装置、積層型半導体装置、封止後積層型半導体装置、及びこれらの製造方法
US9257414B2 (en) 2014-04-10 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked semiconductor structure and method
KR102250997B1 (ko) * 2014-05-02 2021-05-12 삼성전자주식회사 반도체 패키지
WO2015183184A1 (en) * 2014-05-30 2015-12-03 Nguyen Phu Cuong Dao Compact substrate and method for making the same
US9799622B2 (en) * 2014-06-18 2017-10-24 Dyi-chung Hu High density film for IC package
US9756738B2 (en) * 2014-11-14 2017-09-05 Dyi-chung Hu Redistribution film for IC package
CN107210269B (zh) * 2015-03-11 2020-07-28 英特尔公司 利用应变重分布层的可拉伸电子器件制造方法
US9929100B2 (en) 2015-04-17 2018-03-27 Samsung Electro-Mechanics Co., Ltd. Electronic component package and method of manufacturing the same
KR102065943B1 (ko) * 2015-04-17 2020-01-14 삼성전자주식회사 팬-아웃 반도체 패키지 및 그 제조 방법
JP6456232B2 (ja) * 2015-04-30 2019-01-23 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US10043769B2 (en) 2015-06-03 2018-08-07 Micron Technology, Inc. Semiconductor devices including dummy chips
KR102595276B1 (ko) 2016-01-14 2023-10-31 삼성전자주식회사 반도체 패키지
CN106971993B (zh) 2016-01-14 2021-10-15 三星电子株式会社 半导体封装件
JP2017162849A (ja) * 2016-03-07 2017-09-14 イビデン株式会社 配線基板及びその製造方法
US10204870B2 (en) 2016-04-28 2019-02-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing the same
KR101952864B1 (ko) 2016-09-30 2019-02-27 삼성전기주식회사 팬-아웃 반도체 패키지
JP6856076B2 (ja) * 2016-10-06 2021-04-07 株式会社村田製作所 固体電解コンデンサ
WO2018066253A1 (ja) 2016-10-06 2018-04-12 株式会社村田製作所 固体電解コンデンサ
CN111373849A (zh) * 2017-11-16 2020-07-03 三菱瓦斯化学株式会社 带经图案化的金属箔的层叠体的制造方法和带经图案化的金属箔的层叠体
KR102061852B1 (ko) 2017-12-18 2020-01-02 삼성전자주식회사 반도체 패키지
US10714361B2 (en) 2017-12-21 2020-07-14 Foundation For Research And Business, Seoul National University Of Science And Technology Method of fabricating a semiconductor package using an insulating polymer layer
KR102154166B1 (ko) * 2018-12-03 2020-09-09 서울과학기술대학교 산학협력단 반도체 패키지의 제조방법
KR102024227B1 (ko) * 2017-12-21 2019-11-04 서울과학기술대학교 산학협력단 반도체 패키지의 제조방법
JP7199898B2 (ja) * 2018-10-04 2023-01-06 新光電気工業株式会社 電子部品内蔵基板、電子部品内蔵基板の製造方法
US10999926B2 (en) * 2019-06-24 2021-05-04 Flex Ltd. Stress relief encapsulation for flexible hybrid electronics
KR102609157B1 (ko) 2019-06-28 2023-12-04 삼성전기주식회사 반도체 패키지
CN114097076B (zh) 2019-07-10 2026-01-13 株式会社电装 半导体封装、电子装置及半导体封装的制造方法
TWI715234B (zh) * 2019-10-04 2021-01-01 瑞昱半導體股份有限公司 晶片封裝模組
KR102762886B1 (ko) * 2019-12-11 2025-02-07 삼성전기주식회사 전자부품 내장기판
US11335650B2 (en) * 2020-06-11 2022-05-17 Advanced Semiconductor Engineering, Inc. Package substrate, electronic device package and method for manufacturing the same
KR102852782B1 (ko) 2020-07-10 2025-08-29 삼성전자주식회사 반도체 패키지
KR102882371B1 (ko) 2020-09-04 2025-11-06 삼성전자주식회사 반도체 패키지
KR102843285B1 (ko) 2020-09-28 2025-08-06 삼성전자주식회사 반도체 패키지 및 반도체 패키지의 제조 방법
TWI789682B (zh) * 2021-01-15 2023-01-11 友達光電股份有限公司 封裝結構及其製作方法
WO2022264575A1 (ja) * 2021-06-16 2022-12-22 株式会社村田製作所 コンデンサアレイ
US11694974B2 (en) * 2021-07-08 2023-07-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor die with warpage release layer structure in package and fabricating method thereof
CN115732332A (zh) * 2022-11-08 2023-03-03 珠海越亚半导体股份有限公司 一种基板制作方法、嵌埋基板以及半导体
US20240243074A1 (en) * 2023-01-12 2024-07-18 Bae Systems Information And Electronic Systems Integration Inc. Coaxial i/o die

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3813402B2 (ja) * 2000-01-31 2006-08-23 新光電気工業株式会社 半導体装置の製造方法
JP3850260B2 (ja) * 2001-04-27 2006-11-29 イビデン株式会社 半導体チップの製造方法
JP4387231B2 (ja) * 2004-03-31 2009-12-16 新光電気工業株式会社 キャパシタ実装配線基板及びその製造方法
US20100044845A1 (en) * 2006-04-27 2010-02-25 Nec Corporation Circuit substrate, an electronic device arrangement and a manufacturing process for the circuit substrate
JPWO2008120755A1 (ja) * 2007-03-30 2010-07-15 日本電気株式会社 機能素子内蔵回路基板及びその製造方法、並びに電子機器
JP4881211B2 (ja) * 2007-04-13 2012-02-22 新光電気工業株式会社 配線基板の製造方法及び半導体装置の製造方法及び配線基板
JP2011151048A (ja) * 2008-05-13 2011-08-04 Panasonic Corp 電子部品の製造方法および電子部品
JP4489821B2 (ja) 2008-07-02 2010-06-23 新光電気工業株式会社 半導体装置及びその製造方法
JPWO2010101163A1 (ja) * 2009-03-04 2012-09-10 日本電気株式会社 機能素子内蔵基板及びそれを用いた電子デバイス
US8120158B2 (en) * 2009-11-10 2012-02-21 Infineon Technologies Ag Laminate electronic device
JP5581519B2 (ja) 2009-12-04 2014-09-03 新光電気工業株式会社 半導体パッケージとその製造方法
JP5879692B2 (ja) * 2010-03-04 2016-03-08 株式会社リコー インクジェット記録用インクセット、インクジェット記録方法、及び記録物
US8766440B2 (en) * 2010-03-04 2014-07-01 Nec Corporation Wiring board with built-in semiconductor element
JP5605429B2 (ja) * 2010-04-08 2014-10-15 日本電気株式会社 半導体素子内蔵配線基板
US8343810B2 (en) * 2010-08-16 2013-01-01 Stats Chippac, Ltd. Semiconductor device and method of forming Fo-WLCSP having conductive layers and conductive vias separated by polymer layers

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EP2654388A3 (en) 2017-07-26
EP2654388B1 (en) 2022-06-29
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