JP6661232B2 - 配線基板、半導体装置、配線基板の製造方法及び半導体装置の製造方法 - Google Patents
配線基板、半導体装置、配線基板の製造方法及び半導体装置の製造方法 Download PDFInfo
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- JP6661232B2 JP6661232B2 JP2016038876A JP2016038876A JP6661232B2 JP 6661232 B2 JP6661232 B2 JP 6661232B2 JP 2016038876 A JP2016038876 A JP 2016038876A JP 2016038876 A JP2016038876 A JP 2016038876A JP 6661232 B2 JP6661232 B2 JP 6661232B2
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Description
なお、添付図面は、便宜上、特徴を分かりやすくするために特徴となる部分を拡大して示している場合があり、各構成要素の寸法比率などが実際と同じであるとは限らない。また、断面図では、各部材の断面構造を分かりやすくするために、一部の部材のハッチングを梨地模様に代えて示し、一部の部材のハッチングを省略している。
まず、配線構造21の構造について説明する。
図1(a)に示すように、配線構造23は、絶縁層30の上面30Aに積層された配線構造である。配線構造23は、配線構造21よりも配線密度の高い配線層が形成された高密度配線層である。
配線層31の一部を絶縁層30に埋め込むように、絶縁層30の凹部30X内に形成した。この配線層31の上部の側面31Sを絶縁層30により被覆し、配線層31の下部の側面31Sをソルダーレジスト層22により被覆した。このため、配線基板20では、加熱処理等によって熱応力が発生した場合にその熱応力が集中しやすい配線層31の角部A1に、絶縁層30とソルダーレジスト層22との界面が形成されていない。これにより、熱応力が発生した場合に、絶縁層30とソルダーレジスト層22との界面にクラック等が生じることを好適に抑制できる。
次に、図4(a)に示す工程では、支持基板100の上面に、配線層31の上面31T全面及び側面31S全面と金属膜101の側面全面とを被覆する絶縁層30を形成する。この絶縁層30は、例えば、金属膜101に樹脂フィルムをラミネートした後に、樹脂フィルムを押圧しながら130〜200℃程度の温度で熱処理して硬化させることにより形成することができる。ここで、樹脂フィルムとしては、補強材であるガラスクロス30Gにエポキシ樹脂等の熱硬化性樹脂を含浸させた樹脂フィルムを用いることができる。図4(a)に示すように、本工程により形成された絶縁層30では、ガラスクロス30Gの上面が樹脂層34によって被覆され、ガラスクロス30Gの下面が樹脂層34と同じ厚さの樹脂層35によって被覆されている。このため、この場合の絶縁層30では、ガラスクロス30Gが絶縁層30の厚さ方向の中心付近に配設されている。なお、本工程では、ガラスクロス30Gの中心から樹脂層34の上面までの厚さを例えば20〜25μm程度とすることができ、ガラスクロス30Gの中心から樹脂層35の下面までの厚さを例えば20〜25μm程度とすることができる。
続いて、図4(b)に示す工程では、配線層31の上面31Tの一部が露出されるように絶縁層30の所定箇所に貫通孔30Yを形成する。この貫通孔30Yは、例えば、CO2レーザやUV−YAGレーザ等によるレーザ加工法によって形成することができる。
なお、本例のCMP法では、例えば、絶縁層30の上面30Aに形成された導電層105(図4(c)参照)を研磨する際には、導電層105(金属)の研磨量が、絶縁層30(樹脂)の研磨量に比べて大きくなるようにスラリーの材質や研磨パッドの硬度等が調整されている。また、本例のCMP法では、例えば、絶縁層30の上面30Aが露出された後に、スラリーの材質や研磨パッドの硬度等が変更される。具体的には、絶縁層30の上面30Aが露出された後には、絶縁層30(樹脂)の研磨量が、導電層105(金属)の研磨量に比べて大きくなるようにスラリーの材質や研磨パッドの硬度等が調整される。
(反りのシミュレーション)
図1(a)に示した配線基板20(実施例)と、図13に示した従来の配線基板200とについて、反りのシミュレーションを実行した。
実施例の配線基板20では、ソルダーレジスト層22の下面から上面までの厚さを22μm、配線層31の厚さを15μm、絶縁層30の下面30Bから上面30Aまでの厚さを30μmに固定した。また、配線基板20では、絶縁層40の下面から上面までの厚さを5μm、各絶縁層42,44の下面から上面までの厚さを7μm、各配線層41,43の厚さを2μm、配線層45の厚さを10μmに固定した。すなわち、配線基板20全体の厚さ(つまり、ソルダーレジスト層22の下面から配線層45の上面までの厚さ)を81μmに設定した。また、配線構造23に占める配線層41,43,45の体積割合V2を70%に固定した。そして、このような配線基板20において、配線構造21に占める配線層31及びビア配線32の体積割合V1を、0%、10%、20%、30%、40%、50%、60%、70%、80%、90%、100%に変えた場合の反りのシミュレーションを実行した。
反りのシミュレーション結果を図10に示した。図10において、破線で示した反り量(具体的には、1.13mm)は、比較例の配線基板200における反り量である。図10に示すように、実施例の配線基板20では、体積割合V1が高くなるに連れて反り量が低減されることが確認された。具体的には、体積割合V1を70〜100%の範囲に設定することにより、比較例よりも、配線基板20の反り量を低減できることが確認された。すなわち、体積割合V2(ここでは、70%)に対する体積割合V1の比V1/V2を1.0〜1.4程度の範囲に設定することにより、比較例よりも、配線基板20の反り量を低減できることが確認された。さらに言えば、体積割合V1,V2の比V1/V2を1.0〜1.4程度の範囲に設定することにより、配線基板20より厚く設定された比較例の配線基板200よりも、配線基板20の反り量を低減できることが確認された。
以上のことから、配線基板20の反り量を効果的に抑制するためには、体積割合V2に対する体積割合V1の比V1/V2を、1.0〜1.4の範囲に設定することが好ましく、1.0〜1.14の範囲に設定することがより好ましい。
(1)配線層31の一部を絶縁層30に埋め込むように、絶縁層30の凹部30X内に形成した。また、配線層31の上部の側面31Sを絶縁層30により被覆し、配線層31の下部の側面31Sをソルダーレジスト層22により被覆した。これにより、配線層31と絶縁層30とソルダーレジスト層22との熱膨張係数の相違に起因して熱応力が発生した場合に、配線層31と絶縁層30とソルダーレジスト層22との各界面にクラックが発生することを好適に抑制できる。
なお、上記実施形態は、これを適宜変更した以下の態様にて実施することもできる。
・上記実施形態では、ビア配線32の上端面32Aに、ビア配線46の下端面を直接接続するようにしたが、配線構造23の構造はこれに限定されない。
例えば図12に示すように、ガラスクロス30Gの一部を絶縁層30の上面30Aから露出させるようにしてもよい。但し、この場合には、露出されたガラスクロス30Gによって絶縁層30の上面30Aの粗度が大きくなる。このため、配線層48(図11参照)の形成を省略し、ビア配線46の下端面をビア配線32の上端面32Aに直接接続することが好ましい。
・上記実施形態の配線構造23における配線層41,43,45及び絶縁層40,42,44の層数や配線の取り回しなどは様々に変形・変更することが可能である。
・上記実施形態の配線基板20における表面処理層25を省略してもよい。
・上記実施形態では、配線基板20の最外層となる保護絶縁層の一例としてソルダーレジスト層22を例示したが、各種の感光性を有する絶縁性樹脂から保護絶縁層を形成することができる。
・上記実施形態では、配線基板20に半導体チップ60を実装し、その半導体チップ60を封止する封止樹脂70を形成した後に、支持基板100を除去したが、支持基板100を除去するタイミングはこれに限定されない。すなわち、支持基板100を除去した後の構造体のみで剛性を十分に確保することができれば、支持基板100を除去するタイミングは特に限定されない。例えば、絶縁層30の上面30Aに配線構造23を形成した直後に支持基板100を除去するようにしてもよい。
・上記実施形態並びに各変形例は適宜組み合わせてもよい。
20 配線基板
21 配線構造(第1配線構造)
22 ソルダーレジスト層(保護絶縁層)
23 配線構造(第2配線構造)
30 絶縁層(第1絶縁層)
30G ガラスクロス(補強材)
31 配線層(第1配線層)
32 ビア配線
34 樹脂層(第1樹脂層)
35 樹脂層(第2樹脂層)
40,42,44 絶縁層
41,43,45,48 配線層
60 半導体チップ(電子部品)
70 封止樹脂
100 支持基板
101 金属膜
105 導電層
Claims (10)
- 熱硬化性樹脂に対して補強材を入れた絶縁性樹脂からなる第1絶縁層と、
前記第1絶縁層の下面に形成された凹部と、
前記凹部を充填する上部と、前記第1絶縁層の下面よりも下方に突出する下部とを有する第1配線層と、
前記第1絶縁層の上面から露出された上端面を有し、前記第1絶縁層を厚さ方向に貫通して前記第1配線層と接続されたビア配線と、を有する第1配線構造と、
前記第1配線層の下部の側面を被覆し、前記第1絶縁層の下面に形成された保護絶縁層と、
感光性樹脂を主成分とする絶縁性樹脂からなる絶縁層と配線層とを有し、前記第1絶縁層の上面に積層された第2配線構造と、を有し、
前記第1絶縁層の上面と前記ビア配線の上端面とが研磨面であり、
前記第2配線構造の配線密度は、前記第1配線構造の配線密度よりも高く、
前記補強材は、前記第1絶縁層の厚さ方向の中心よりも前記第2配線構造側に偏在していることを特徴とする配線基板。 - 前記第1配線構造に占める前記第1配線層及び前記ビア配線の体積割合は、前記第2配線構造に占める、前記第2配線構造内の全ての配線層の体積割合以上の値に設定されていることを特徴とする請求項1に記載の配線基板。
- 前記補強材は、前記第1配線層の下面から前記第2配線構造の最上層の絶縁層の上面までの厚さにおける厚さ方向の中心に位置するように設けられていることを特徴とする請求項1又は2に記載の配線基板。
- 前記第1絶縁層は、前記補強材と、前記補強材の上面を被覆する第1樹脂層と、前記補強材の下面を被覆する第2樹脂層とからなり、
前記第1樹脂層は、前記第2樹脂層よりも薄いことを特徴とする請求項1〜3のいずれか一項に記載の配線基板。 - 前記補強材の表面全面は前記第1樹脂層及び前記第2樹脂層によって被覆されていることを特徴とする請求項4に記載の配線基板。
- 前記第1配線層は、配線パターンと、前記配線パターンの形成されていない領域に形成されたダミーパターンとを有することを特徴とする請求項1〜5のいずれか一項に記載の配線基板。
- 熱硬化性樹脂に対して補強材を入れた絶縁性樹脂からなる第1絶縁層と、
前記第1絶縁層の下面に形成された凹部と、
前記凹部を充填する上部と、前記第1絶縁層の下面よりも下方に突出する下部とを有する第1配線層と、
前記第1絶縁層の上面から露出された上端面を有し、前記第1絶縁層を厚さ方向に貫通して前記第1配線層と接続されたビア配線と、を有する第1配線構造と、
前記第1配線層の下部の側面を被覆し、前記第1絶縁層の下面に形成された保護絶縁層と、
感光性樹脂を主成分とする絶縁性樹脂からなる絶縁層と配線層とを有し、前記第1絶縁層の上面に積層された第2配線構造と、
前記第2配線構造の最上層の配線層に接続された電子部品と、
前記第2配線構造の最上層の絶縁層の上面に形成され、前記電子部品を封止する封止樹脂と、を有し、
前記第1絶縁層の上面と前記ビア配線の上端面とが研磨面であり、
前記第2配線構造の配線密度は、前記第1配線構造の配線密度よりも高く、
前記補強材は、前記第1絶縁層の厚さ方向の中心よりも前記第2配線構造側に偏在していることを特徴とする半導体装置。 - 支持基板上に第1配線層を形成する工程と、
前記支持基板上に、熱硬化性樹脂に対して補強材を入れた絶縁性樹脂からなる第1絶縁層を、前記第1配線層の側面全面及び上面全面を被覆するように形成する工程と、
前記第1絶縁層を厚さ方向に貫通して前記第1配線層の上面の一部を露出する貫通孔を形成する工程と、
前記貫通孔を充填するとともに、前記第1絶縁層の上面を被覆する導電層を形成する工程と、
前記第1絶縁層の上面から突出した前記導電層と前記第1絶縁層の上面の一部とを研磨し、前記第1絶縁層の上面に露出する上端面を有するビア配線を前記貫通孔内に形成する工程と、
前記第1絶縁層の上面に、感光性樹脂を主成分とする絶縁性樹脂からなる絶縁層と配線層とを有する第2配線構造を積層する工程と、
前記支持基板を除去する工程と、
前記第1絶縁層を下面側から薄化し、前記第1配線層の下部の側面を前記第1絶縁層から露出させる工程と、
前記第1絶縁層の下面に、前記第1絶縁層から露出された前記第1配線層の側面を被覆する保護絶縁層を形成する工程と、を有し、
前記第2配線構造の配線密度は、前記第1配線層の配線密度よりも高く、
前記第1絶縁層の上面の一部を研磨する工程では、前記補強材が前記第1絶縁層の厚さ方向の中心よりも前記第1絶縁層の上面側に偏在されるように前記第1絶縁層の上面を研磨することを特徴とする配線基板の製造方法。 - 前記第1配線層を形成する工程は、
前記支持基板の上面全面を被覆する金属膜を形成する工程と、
前記金属膜の上面に前記第1配線層を形成する工程と、
前記第1配線層をマスクにして、前記金属膜をエッチングにより除去する工程と、を有し、
前記第1絶縁層を下面側から薄化する工程では、前記第1絶縁層の薄化と同時に、前記金属膜を除去することを特徴とする請求項8に記載の配線基板の製造方法。 - 支持基板上に第1配線層を形成する工程と、
前記支持基板上に、熱硬化性樹脂に対して補強材を入れた絶縁性樹脂からなる第1絶縁層を、前記第1配線層の側面全面及び上面全面を被覆するように形成する工程と、
前記第1絶縁層を厚さ方向に貫通して前記第1配線層の上面の一部を露出する貫通孔を形成する工程と、
前記貫通孔を充填するとともに、前記第1絶縁層の上面を被覆する導電層を形成する工程と、
前記第1絶縁層の上面から突出した前記導電層と前記第1絶縁層の上面の一部とを研磨し、前記第1絶縁層の上面に露出する上端面を有するビア配線を前記貫通孔内に形成する工程と、
前記第1絶縁層の上面に、感光性樹脂を主成分とする絶縁性樹脂からなる絶縁層と配線層とを有する第2配線構造を積層する工程と、
前記第2配線構造の最上層の配線層に電子部品を接続する工程と、
前記第2配線構造の最上層の絶縁層の上面に、前記電子部品を封止する封止樹脂を形成する工程と、
前記支持基板を除去する工程と、
前記第1絶縁層を下面側から薄化し、前記第1配線層の下部の側面を前記第1絶縁層から露出させる工程と、
前記第1絶縁層の下面に、前記第1絶縁層から露出された前記第1配線層の側面を被覆する保護絶縁層を形成する工程と、
を有し、
前記第2配線構造の配線密度は、前記第1配線層の配線密度よりも高く、
前記第1絶縁層の上面の一部を研磨する工程では、前記補強材が前記第1絶縁層の厚さ方向の中心よりも前記第1絶縁層の上面側に偏在されるように前記第1絶縁層の上面を研磨することを特徴とする半導体装置の製造方法。
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