JP6690929B2 - 配線基板、半導体装置及び配線基板の製造方法 - Google Patents
配線基板、半導体装置及び配線基板の製造方法 Download PDFInfo
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- JP6690929B2 JP6690929B2 JP2015245207A JP2015245207A JP6690929B2 JP 6690929 B2 JP6690929 B2 JP 6690929B2 JP 2015245207 A JP2015245207 A JP 2015245207A JP 2015245207 A JP2015245207 A JP 2015245207A JP 6690929 B2 JP6690929 B2 JP 6690929B2
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- insulating layer
- layer
- wiring
- metal plate
- wiring board
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Description
なお、添付図面は、便宜上、特徴を分かりやすくするために特徴となる部分を拡大して示している場合があり、各構成要素の寸法比率などが実際と同じであるとは限らない。また、断面図では、各部材の断面構造を分かりやすくするために、一部の部材のハッチングを梨地模様に代えて示し、一部の部材のハッチングを省略している。なお、本明細書において、「平面視」とは、対象物を図1等の鉛直方向(図中上下方向)から視ることを言い、「平面形状」とは、対象物を図1等の鉛直方向から視た形状のことを言う。
図1(a)に示すように、配線基板10は、コア基板11と、コア基板11の下面に積層されたソルダレジスト層12と、コア基板11の上面に積層された配線構造13とを有している。
配線構造13は、絶縁層21の上面21Aに積層された配線構造である。配線構造13は、コア基板11の配線層26よりも配線密度の高い配線層が形成された高密度配線層である。
ここで、絶縁層31,33の材料としては、例えば、フェノール系樹脂やポリイミド系樹脂等の感光性樹脂を主成分とする絶縁性樹脂を用いることができる。これら絶縁層31,33は、例えば、シリカやアルミナ等のフィラーを含有していてもよい。また、配線層30,32,34の材料としては、例えば、銅や銅合金を用いることができる。
半導体装置40は、配線基板10と、1つ又は複数の半導体チップ50と、アンダーフィル樹脂55と、外部接続端子56とを有している。
コア基板11のコア材として、機械的強度(剛性)の高い金属板20を設けた。この金属板20により、コア基板11の剛性を高めることができる。例えば、コア基板11が薄くなった場合であっても、金属板20によってコア基板11の剛性を確保することができ、ひいては配線基板10の剛性を確保することができる。このため、配線基板10全体を薄型化しつつも、配線基板10に反りが発生することを好適に抑制することができる。
まず、図3(a)に示す工程では、フレーム60と、そのフレーム60の上面60Aに固定された金属板20とを準備する。金属板20としては、配線基板10(図1参照)が多数個取れる大判の基板が使用される。詳述すると、図3(b)に示すように、金属板20は、複数の個別領域A1が設けられたブロックB1と、ブロックB1を取り囲むように形成された外周部C1とを有している。ブロックB1には、複数の個別領域A1がマトリクス状(ここでは、3×3)に設けられている。ここで、個別領域A1は、最終的に破線に沿って切断されて個片化され、各々個別の配線基板10となる領域である。なお、複数の個別領域A1は、図3(b)に示すように所定の間隔を介して配列されてもよいし、互いに接するように配列されてもよい。
次に、図5(c)に示す工程では、絶縁層21の上面21A全面と貫通電極25の上端面25A全面とを被覆するようにシード層30Aを形成する。このシード層30Aは、例えば、スパッタ法や無電解めっき法により形成することができる。例えば、本工程では、絶縁層21の上面21Aが平滑面であるため、その上面21Aに対してスパッタ法によりシード層30Aを均一に形成することができ、シード層30Aの上面を平滑に形成することができる。
次に、図7(a)に示す工程では、最下層の配線層26の下面の一部を露出させるための開口部12Xを有するソルダレジスト層12を、絶縁層21の下面21Bに積層する。このソルダレジスト層12は、例えば、感光性のソルダレジストフィルムをラミネートし、又は液状のソルダレジストを塗布し、当該レジストを所要の形状にパターニングすることにより形成することができる。これにより、ソルダレジスト層12の開口部12Xから配線層26の下面の一部が外部接続用パッドP1として露出される。なお、必要に応じて、外部接続用パッドP1上に表面処理層を形成するようにしてもよい。
以上説明した本実施形態によれば、以下の効果を奏することができる。
(1)コア基板11のコア材として、機械的強度(剛性)の高い金属板20を設けたため、コア基板11の剛性を高めることができる。例えば、コア基板11が薄くなった場合であっても、金属板20によってコア基板11の剛性を確保することができ、ひいては配線基板10の剛性を確保することができる。このため、配線基板10全体を薄型化しつつも、配線基板10に反りが発生することを好適に抑制することができる。
なお、上記実施形態は、これを適宜変更した以下の態様にて実施することもできる。
・上記実施形態では、図5(a)に示した工程において、絶縁層21の上面21Aに形成された導電層61をパターニングし、絶縁層21の上面21Aに形成された導電層61の一部を除去するようにした。これに限らず、絶縁層21の上面21Aに形成された導電層61をパターニングする工程を省略してもよい。この場合には、例えば図5(b)に示す工程において、絶縁層21の上面21A全面を被覆する導電層61が研磨により除去される。
・上記実施形態では、多数個取りの製造方法に具体化したが、単数個取り(一個取り)の製造方法に具体化してもよい。
・上記実施形態の配線基板10に形成された貫通孔の断面形状は特に限定されない。例えば、配線基板10に形成された貫通孔をストレート形状(断面視略矩形状)に形成するようにしてもよい。
11 コア基板
12 ソルダレジスト層(最外絶縁層)
13 配線構造
20 金属板
20X 貫通孔(第1貫通孔)
21〜24 絶縁層(第1絶縁層)
25 貫通電極
26 配線層(第1配線層)
30 配線層(第2配線層)
31 絶縁層(第2絶縁層)
32 配線層
33 絶縁層
34 配線層(最上層の配線層)
40 半導体装置
50 半導体チップ
60 フレーム
61 導電層
C1 外周部
P2 パッド
Claims (8)
- 複数の第1貫通孔を有する金属板と、前記金属板の上面及び下面と前記第1貫通孔の内側面とを被覆する第1絶縁層と、前記第1絶縁層を厚さ方向に貫通し、前記第1絶縁層から露出された上端面を有する貫通電極と、前記貫通電極と接続され、前記第1絶縁層の下面に形成された第1配線層と、を有するコア基板と、
感光性樹脂を主成分とする絶縁性樹脂からなる絶縁層と配線層とを有し、前記第1絶縁層の上面に積層された配線構造と、
前記コア基板の下面に形成された最外絶縁層と、を有し、
前記第1絶縁層の上面と前記貫通電極の上端面とが研磨面であり、
前記配線構造の配線密度は、前記コア基板の配線密度よりも高く、
前記金属板は、前記第1絶縁層の厚さ方向の中心よりも前記配線構造側に片寄って設けられていることを特徴とする配線基板。 - 前記配線構造は、
前記貫通電極の上端面に接するように、前記第1絶縁層の上面に形成された第2配線層と、
前記第2配線層の一部を被覆するように前記第1絶縁層の上面に形成された第2絶縁層と、を有し、
前記配線構造の最上層の配線層は、電子部品と接続されるパッドを有することを特徴とする請求項1に記載の配線基板。 - 前記第1絶縁層は、前記第1貫通孔と平面視で重なる位置に、前記第1貫通孔よりも平面形状が小さく形成された第2貫通孔を有し、
前記貫通電極は、前記第2貫通孔を充填するように形成され、
前記第1配線層は、前記貫通電極と一体に形成されていることを特徴とする請求項1又は2に記載の配線基板。 - 前記金属板は、前記第1絶縁層よりも熱膨張係数の低い材料であって、且つ前記第1絶縁層よりも弾性率の高い材料からなることを特徴とする請求項1〜3のいずれか一項に記載の配線基板。
- 請求項1〜4のいずれか一項に記載の配線基板と、前記配線構造の最上層の配線層にフリップチップ実装された半導体チップと、を有することを特徴とする半導体装置。
- 複数の第1貫通孔を有する金属板を準備する工程と、
前記金属板の上面及び下面を被覆し、前記第1貫通孔を充填する第1絶縁層を形成する工程と、
前記第1絶縁層の前記第1貫通孔と平面視で重なる位置に、前記第1絶縁層を厚さ方向に貫通し、前記第1貫通孔よりも平面形状が小さい第2貫通孔を形成する工程と、
前記第2貫通孔を充填するとともに、前記第1絶縁層の上面及び下面を被覆する導電層を形成する工程と、
前記第1絶縁層の下面に形成された前記導電層をパターニングし、前記第1絶縁層の下面に第1配線層を形成する工程と、
前記第1絶縁層の上面から突出した前記導電層と前記第1絶縁層の上面の一部とを研磨することにより、前記第1絶縁層の上面に露出する上端面を有し、前記第1配線層と一体に形成された貫通電極を前記第2貫通孔内に形成する工程と、
前記第1絶縁層の上面に、感光性樹脂を主成分とする絶縁性樹脂からなる絶縁層と配線層とを複数層有する配線構造を積層する工程と、を有し、
前記配線構造の配線密度は、前記第1配線層の配線密度よりも高く、
前記第1絶縁層の上面の一部を研磨する工程では、前記金属板が前記第1絶縁層の厚さ方向の中心よりも前記配線構造側に片寄って配置されるように前記第1絶縁層の上面を研磨することを特徴とする配線基板の製造方法。 - 前記第1絶縁層を形成する工程の前に、前記金属板をフレームに固定する工程を有し、
前記配線構造を積層する工程の後に、前記フレームから前記金属板を分離する工程を有し、
前記フレームは、前記金属板が固定されてから前記金属板が分離されるまでの間、前記金属板の外周部を外方に引っ張った状態で前記金属板を固定していることを特徴とする請求項6に記載の配線基板の製造方法。 - 前記第1配線層を形成する工程では、前記第1絶縁層の上面に形成された前記導電層の一部を除去することを特徴とする請求項6又は7に記載の配線基板の製造方法。
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