JP5883392B2 - 低emi回路のためのパッケージ構成 - Google Patents
低emi回路のためのパッケージ構成 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 59
- 239000003990 capacitor Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 22
- 125000006850 spacer group Chemical group 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 16
- 239000004020 conductor Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 9
- 239000011810 insulating material Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BNPSSFBOAGDEEL-UHFFFAOYSA-N albuterol sulfate Chemical compound OS(O)(=O)=O.CC(C)(C)NCC(O)C1=CC=C(O)C(CO)=C1.CC(C)(C)NCC(O)C1=CC=C(O)C(CO)=C1 BNPSSFBOAGDEEL-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Description
Claims (38)
- ヒートシンクに電気的に接続されている導電性のパッケージベースを備えるパッケージ内に収容され、半導体ボディを有する高電圧スイッチングトランジスタを備える電子部品において、
前記高電圧スイッチングトランジスタは、全てが前記高電圧スイッチングトランジスタの前記半導体ボディの第1の側に設けられたソース電極と、ゲート電極と、ドレイン電極とを備え、
前記ソース電極は、前記導電性のパッケージベースに電気的に接続され、
前記半導体ボディは、前記導電性のパッケージベースの上に設けられ、かつ、絶縁又は半絶縁部分が、前記半導体ボディと前記導電性のパッケージベースとの間に設けられ、かつ、前記半導体ボディおよび前記導電性のパッケージベースに直接接続されている電子部品。 - 前記高電圧スイッチングトランジスタは、III−Nトランジスタである請求項1記載の電子部品。
- 前記高電圧スイッチングトランジスタは、横型デバイスである請求項1又は2記載の電子部品。
- 前記絶縁又は半絶縁部分は、絶縁又は半絶縁基板である請求項3記載の電子部品。
- 前記高電圧スイッチングトランジスタは、300V以上のバイアスで動作するように構成されている請求項1又は2記載の電子部品。
- 前記高電圧スイッチングトランジスタは、エンハンス型トランジスタである請求項1又は2記載の電子部品。
- 前記導電性のパッケージベースは、回路グラウンド又はDCグラウンドに電気的に接続されている請求項1又は2記載の電子部品。
- 前記絶縁又は半絶縁部分は、絶縁又は半絶縁基板である請求項1記載の電子部品。
- 前記高電圧スイッチングトランジスタは、前記絶縁又は半絶縁部分を前記パッケージの導電性の構造部分に隣接又は接触させて、前記パッケージの導電性の構造部分に直接取り付けられている請求項1記載の電子部品。
- 前記電子部品の総出力パワーに対する前記電子部品の動作の間に生じるEMIパワーの第1の比は、第2の電子部品の総出力パワーに対する前記第2の電子部品の動作の間に生じるEMIパワーの第2の比より小さく、前記第2の電子部品は、ドレイン電極が前記第2の電子部品のパッケージの導電性の構造部分に電気的に接続され、前記第2の電子部品のパッケージの導電性の構造部分が絶縁スペーサによって回路グラウンド又はDCグラウンドから分離された高電圧スイッチングトランジスタを含む請求項1記載の電子部品。
- 前記電子部品の総出力パワーに対する前記電子部品の動作の間に生じるスイッチング電力損失の第1の比は、第2の電子部品の総出力パワーに対する前記第2の電子部品の動作の間に生じるスイッチング電力損失の第2の比より小さく、前記第2の電子部品は、ドレイン電極が第2の電子部品のパッケージの導電性の構造部分に電気的に接続され、第2の電子部品のパッケージの導電性の構造部分が絶縁スペーサによって回路グラウンド又はDCグラウンドから分離された高電圧スイッチングトランジスタを含む請求項1記載の電子部品。
- 前記絶縁又は半絶縁部分は、シム又はウエハレベルシムである請求項1記載の電子部品。
- 請求項12記載の電子部品の製造方法であって、
半導体ウェハ上に半導体ボディを形成する工程と、
前記半導体ウェハを前記シム又はウエハレベルシムに取り付ける工程と、
前記半導体ウェハをダイシングする工程とを有する製造方法。 - 前記パッケージは、ゲートリードと、ソースリードと、ドレインリードとを更に備え、前記ドレインリードは、前記ゲートリードと前記ソースリードとの間にある請求項1又は2記載の電子部品。
- 前記パッケージは、ゲートリードと、ソースリードと、ドレインリードとを更に備え、前記ソースリードは、前記ゲートリードと前記ドレインリードとの間にある請求項1又は2記載の電子部品。
- ヒートシンクに電気的に接続されている第1の導電性パッケージベースを含む第1のパッケージ内に収容された半導体ボディを有する第1のトランジスタであって、前記半導体ボディは、前記第1の導電性パッケージベース上に設けられ、絶縁又は半絶縁部分が、前記半導体ボディと前記第1の導電性のパッケージベースとの間に設けられ、かつ、前記半導体ボディおよび前記第1の導電性のパッケージベースに直接接続されており、
第2の導電性パッケージベースを含む第2のパッケージ内に収容された第2のトランジスタとを備え、
前記第1のトランジスタのソースは、前記第1の導電性のパッケージベースに電気的に接続され、前記第2のトランジスタのドレインは、前記第2の導電性のパッケージベースに電気的に接続されているアセンブリ。 - ヒートシンクに電気的に接続されている第1の導電性パッケージベースを含む第1のパッケージ内に収容された、第1のソースを有し半導体ボディを有する第1のトランジスタであって、前記半導体ボディは、前記第1の導電性パッケージベース上に設けられ、絶縁又は半絶縁部分が、前記半導体ボディと前記第1の導電性のパッケージベースとの間に設けられ、かつ、前記半導体ボディおよび前記導電性のパッケージベースに直接接続されており、
第2の導電性パッケージベースを含む第2のパッケージ内に収容された、第2のソースと第2のドレインとを有する第2のトランジスタとを備え、
前記第1のソースは、前記第1の導電性パッケージベースに電気的に接続され、前記第2のソースは、前記第2の導電性パッケージベースから電気的に分離され、前記第2のドレインは、第2の導電性の構造部分から電気的に分離されているアセンブリ。 - 前記第1のトランジスタ又は前記第2のトランジスタは、高電圧スイッチングトランジスタである請求項16又は17記載のアセンブリ。
- 前記第1の導電性パッケージベース又は前記第2の導電性パッケージベースは、ヒートシンクに直接取り付けられ、前記ヒートシンクに電気的に接続されている請求項16又は17記載のアセンブリ。
- 前記第1の導電性パッケージベース又は前記第2の導電性パッケージベースは、回路グラウンド又はDCグラウンドに電気的に接続されている請求項16又は17記載のアセンブリ。
- 前記第2の導電性パッケージベースは、DCハイ電圧源に電気的に接続されている請求項17記載のアセンブリ。
- 前記第2の導電性パッケージベースは、絶縁スペーサによって回路グラウンド又はDCグラウンドから分離されている請求項20記載のアセンブリ。
- 前記第2の導電性パッケージベースと前記回路グラウンド又はDCグラウンドとの間のキャパシタンスは、前記第2の導電性パッケージベースをAC接地する請求項22記載のアセンブリ。
- 前記第1のトランジスタのドレインは、第2のトランジスタのソースに電気的に接続されている請求項16又は17記載のアセンブリ。
- 前記第1のトランジスタは、ロー側スイッチであり、前記第2のトランジスタは、ハイ側スイッチである請求項24記載のアセンブリ。
- 請求項16又は17のアセンブリを備えるハーフブリッジ。
- 複数の請求項26記載のハーフブリッジを備えるブリッジ回路。
- 前記第1のトランジスタ又は前記第2のトランジスタは、III−Nトランジスタである請求項6又は17記載のアセンブリ。
- 前記第1のトランジスタ又は前記第2のトランジスタは、横型デバイスである請求項16又は17記載のアセンブリ。
- 第1のソースと第1のドレインとを有し、半導体ボディを有する第1のトランジスタと、
第2のソースと第2のドレインとを有する第2のトランジスタと、
前記第1のトランジスタ及び前記第2のトランジスタの両方を収容し、導電性パッケージベースを含む単一のパッケージとを備え、
前記第1のソースは、前記パッケージの導電性パッケージベースに電気的に接続され、前記第1のドレインは、前記第2のソースに電気的に接続され、前記半導体ボディは、前記導電性パッケージベース上に設けられ、絶縁又は半絶縁部分が、前記半導体ボディと前記導電性のパッケージベースとの間に設けられ、かつ、前記半導体ボディおよび前記導電性のパッケージベースに直接接続されており、前記第2のドレインはキャパシタの第1の端子に接続され、キャパシタの第2の端子は、前記導電性パッケージベースに接続されている電子部品。 - 前記第1のトランジスタ又は前記第2のトランジスタは、III−Nトランジスタである請求項30記載の電子部品。
- 前記第1のトランジスタ及び前記第2のトランジスタは、共通の基板を共有する請求項30又は31記載の電子部品。
- 前記基板は、絶縁又は半絶縁基板である請求項32記載の電子部品。
- 前記第1のドレイン及び前記第2のソースは、単一の電極から形成されている請求項32記載の電子部品。
- 前記第1のトランジスタ又は前記第2のトランジスタは、高電圧スイッチングトランジスタである請求項30又は31記載の電子部品。
- 前記第1のトランジスタ又は前記第2のトランジスタは、横型デバイスである請求項30又は31記載の電子部品。
- 前記パッケージは、第1のソースリードと、第1のゲートリードと、第1のドレインリードと、第2のゲートリードと、第2のドレインリードとを備える請求項30又は31記載の電子部品。
- 前記第1のトランジスタは、第1のゲートを更に備え、前記第2のトランジスタは、第2のゲートを更に備え、前記パッケージベースは、前記第1のソースリードに電気的に接続され、前記第1のゲートは、前記第1のゲートリードに電気的に接続され、前記第2のゲートは、前記第2のゲートリードに電気的に接続され、前記第2のドレインは、前記第2のドレインリードに電気的に接続され、前記第1のドレイン及び第2のソースは、共に前記第1のドレインリードに電気的に接続されている請求項37記載の電子部品。
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EP2497109A2 (en) | 2012-09-12 |
TWI573240B (zh) | 2017-03-01 |
US8890314B2 (en) | 2014-11-18 |
US20110101466A1 (en) | 2011-05-05 |
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CN102598256B (zh) | 2016-07-06 |
US8592974B2 (en) | 2013-11-26 |
US8138529B2 (en) | 2012-03-20 |
CN106098660A (zh) | 2016-11-09 |
US9190295B2 (en) | 2015-11-17 |
WO2011053981A2 (en) | 2011-05-05 |
TWI538149B (zh) | 2016-06-11 |
US20140048849A1 (en) | 2014-02-20 |
EP2497109A4 (en) | 2017-04-19 |
US20140377911A1 (en) | 2014-12-25 |
US20130234257A1 (en) | 2013-09-12 |
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TW201126686A (en) | 2011-08-01 |
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US8455931B2 (en) | 2013-06-04 |
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