JP2016096344A - 低emi回路のためのパッケージ構成 - Google Patents
低emi回路のためのパッケージ構成 Download PDFInfo
- Publication number
- JP2016096344A JP2016096344A JP2015234373A JP2015234373A JP2016096344A JP 2016096344 A JP2016096344 A JP 2016096344A JP 2015234373 A JP2015234373 A JP 2015234373A JP 2015234373 A JP2015234373 A JP 2015234373A JP 2016096344 A JP2016096344 A JP 2016096344A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- package
- electronic component
- electrically connected
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 43
- 239000003990 capacitor Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 22
- 125000006850 spacer group Chemical group 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 16
- 239000004020 conductor Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 9
- 239000011810 insulating material Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BNPSSFBOAGDEEL-UHFFFAOYSA-N albuterol sulfate Chemical compound OS(O)(=O)=O.CC(C)(C)NCC(O)C1=CC=C(O)C(CO)=C1.CC(C)(C)NCC(O)C1=CC=C(O)C(CO)=C1 BNPSSFBOAGDEEL-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/115—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Abstract
Description
Claims (45)
- パッケージ内に収容された高電圧スイッチングトランジスタを備える電子部品において、
前記高電圧スイッチングトランジスタは、全てが前記高電圧スイッチングトランジスタの第1の側に設けられたソース電極と、ゲート電極と、ドレイン電極とを備え、
前記ソース電極は、前記パッケージの導電性の構造部分に電気的に接続されている電子部品。 - 前記高電圧スイッチングトランジスタは、III−Nトランジスタである請求項1記載の電子部品。
- 前記高電圧スイッチングトランジスタは、横型デバイスである請求項1又は2記載の電子部品。
- 前記高電圧スイッチングトランジスタ、絶縁又は半絶縁基板を備える請求項3記載の電子部品。
- 前記高電圧スイッチングトランジスタは、300V以上のバイアスで動作するように構成されている請求項1又は2記載の電子部品。
- 前記高電圧スイッチングトランジスタは、エンハンス型トランジスタである請求項1又は2記載の電子部品。
- 前記パッケージの導電性の構造部分は、パッケージベースを備える請求項1又は2記載の電子部品。
- 前記パッケージの導電性の構造部分は、パッケージケースを更に備える請求項7記載の電子部品。
- 前記パッケージの導電性の構造部分は、ヒートシンクに電気的に接続されている請求項1又は2記載の電子部品。
- 前記パッケージの導電性の構造部分は、回路グラウンド又はDCグラウンドに電気的に接続されている請求項1又は2記載の電子部品。
- 前記高電圧スイッチングトランジスタは、絶縁又は半絶縁部分を備える請求項10記載の電子部品。
- 前記絶縁又は半絶縁部分は、絶縁又は半絶縁基板である請求項11記載の電子部品。
- 前記高電圧スイッチングトランジスタは、前記絶縁又は半絶縁部分を前記パッケージの導電性の構造部分に隣接又は接触させて、前記パッケージの導電性の構造部分に直接取り付けられている請求項11記載の電子部品。
- 前記電子部品の総出力パワーに対する前記電子部品の動作の間に生じるEMIパワーの第1の比は、第2の電子部品の総出力パワーに対する前記第2の電子部品の動作の間に生じるEMIパワーの第2の比より小さく、前記第2の電子部品は、ドレイン電極が前記第2の電子部品のパッケージの導電性の構造部分に電気的に接続され、前記第2の電子部品のパッケージの導電性の構造部分が絶縁スペーサによって回路グラウンド又はDCグラウンドから分離された高電圧スイッチングトランジスタを含む請求項13記載の電子部品。
- 前記電子部品の総出力パワーに対する前記電子部品の動作の間に生じるスイッチング電力損失の第1の比は、第2の電子部品の総出力パワーに対する前記第2の部品の動作の間に生じるスイッチング電力損失の第2の比より小さく、前記第2の電子部品は、ドレイン電極が第2の電子部品のパッケージの導電性の構造部分に電気的に接続され、第2の電子部品のパッケージの導電性の構造部分が絶縁スペーサによって回路グラウンド又はDCグラウンドから分離された高電圧スイッチングトランジスタを含む請求項13記載の電子部品。
- 前記高電圧スイッチングトランジスタは、絶縁又は半絶縁部分及び半導体ボディを更に備え、前記絶縁又は半絶縁部分は、前記半導体ボディと前記パッケージの導電性の構造部分との間にある請求項1又は2記載の電子部品。
- 前記絶縁又は半絶縁部分は、シム又はウエハレベルシムである請求項16記載の電子部品。
- 請求項17記載の電子部品の製造方法であって、
半導体ウェハ上に半導体ボディを形成する工程と、
前記半導体ウェハを前記シム又はウエハレベルシムに取り付ける工程と、
前記半導体ウェハをダイシングする工程とを有する製造方法。 - 前記パッケージは、ゲートリードと、ソースリードと、ドレインリードとを更に備え、前記ドレインリードは、前記ゲートリードと前記ソースリードとの間にある請求項1又は2記載の電子部品。
- 前記パッケージは、ゲートリードと、ソースリードと、ドレインリードとを更に備え、前記ソースリードは、前記ゲートリードと前記ドレインリードとの間にある請求項1又は2記載の電子部品。
- 第1の導電性の構造部分を含む第1のパッケージ内に収容された第1のトランジスタと、
第2の導電性の構造部分を含む第2のパッケージ内に収容された第2のトランジスタとを備え、
前記第1のトランジスタのソースは、前記第1の導電性の構造部分に電気的に接続され、前記第2のトランジスタのドレインは、前記第2の導電性の構造部分に電気的に接続されているアセンブリ。 - 第1の導電性の構造部分を含む第1のパッケージ内に収容された、第1のソースを有する第1のトランジスタと、
第2の導電性の構造部分を含む第2のパッケージ内に収容された、第2のソースと第2のドレインとを有する第2のトランジスタとを備え、
前記第1のソースは、前記第1の導電性の構造部分に電気的に接続され、前記第2のソースは、前記第2の導電性の構造部分から電気的に分離され、前記第2のドレインは、第2の導電性の構造部分から電気的に分離されているアセンブリ。 - 前記第1のトランジスタ又は前記第2のトランジスタは、高電圧スイッチングトランジスタである請求項21又は22記載のアセンブリ。
- 前記第1の導電性の構造部分又は前記第2の導電性の構造部分は、ヒートシンクに直接取り付けられ、前記ヒートシンクに電気的に接続されている請求項21又は22記載のアセンブリ。
- 前記第1の導電性の構造部分又は前記第2の導電性の構造部分は、回路グラウンド又はDCグラウンドに電気的に接続されている請求項21又は22記載のアセンブリ。
- 前記第2の導電性の構造部分は、DCハイ電圧源に電気的に接続されている請求項21記載のアセンブリ。
- 前記第2の導電性の構造部分は、絶縁スペーサによって回路グラウンド又はDCグラウンドから分離されている請求項26記載のアセンブリ。
- 前記第2の導電性の構造部分と前記回路グラウンド又はDCグラウンドとの間のキャパシタンスは、前記第2の導電性の構造部分をAC接地する請求項27記載のアセンブリ。
- 前記第1のトランジスタのドレインは、第2のトランジスタのソースに電気的に接続されている請求項21又は22記載のアセンブリ。
- 前記第1のトランジスタは、ロー側スイッチであり、前記第2のトランジスタは、ハイ側スイッチである請求項29記載のアセンブリ。
- 請求項21又は22のアセンブリを備えるハーフブリッジ。
- 複数の請求項31記載のハーフブリッジを備えるブリッジ回路。
- 前記第1のトランジスタ又は前記第2のトランジスタは、III−Nトランジスタである請求項21又は22記載のアセンブリ。
- 前記第1のトランジスタ又は前記第2のトランジスタは、横型デバイスである請求項21又は22記載のアセンブリ。
- 第1のソースと第1のドレインとを有する第1のトランジスタと、
第2のソースと第2のドレインとを有する第2のトランジスタと、
前記第1のトランジスタ及び前記第2のトランジスタの両方を収容し、導電性の構造部分を含む単一のパッケージとを備え、
前記第1のソースは、前記パッケージの導電性の構造部分に電気的に接続され、前記第1のドレインは、前記第2のソースに電気的に接続され、前記第1のトランジスタは、前記パッケージの導電性の構造部分に直接取り付けられている電子部品。 - 前記第1のトランジスタ又は前記第2のトランジスタは、III−Nトランジスタである請求項35記載の電子部品。
- 前記第1のトランジスタ及び前記第2のトランジスタは、共通の基板を共有する請求項35又は36記載の電子部品。
- 前記基板は、絶縁又は半絶縁基板である請求項37記載の電子部品。
- 前記第1のドレイン及び前記第2のソースは、単一の電極から形成されている請求項37記載の電子部品。
- キャパシタを更に備え、前記パッケージは、前記キャパシタを収容する請求項35又は36記載の電子部品。
- 前記第2のドレインは、前記キャパシタの第1の端子に電気的に接続され、前記キャパシタの第2の端子は、前記パッケージの導電性の構造部分に電気的に接続されている請求項40記載の電子部品。
- 前記第1のトランジスタ又は前記第2のトランジスタは、高電圧スイッチングトランジスタである請求項35又は36記載の電子部品。
- 前記第1のトランジスタ又は前記第2のトランジスタは、横型デバイスである請求項35又は36記載の電子部品。
- 前記パッケージは、第1のソースリードと、第1のゲートリードと、第1のドレインリードと、第2のゲートリードと、第2のドレインリードとを備える請求項35又は36記載の電子部品。
- 前記第1のトランジスタは、第1のゲートを更に備え、前記第2のトランジスタは、第2のゲートを更に備え、前記パッケージの導電性の構造部分は、前記第1のソースリードに電気的に接続され、前記第1のゲートは、前記第1のゲートリードに電気的に接続され、前記第2のゲートは、前記第2のゲートリードに電気的に接続され、前記第2のドレインは、前記第2のドレインリードに電気的に接続され、前記第1のドレイン及び第2のソースは、共に前記第1のドレインリードに電気的に接続されている請求項44記載の電子部品。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/611,018 | 2009-11-02 | ||
US12/611,018 US8138529B2 (en) | 2009-11-02 | 2009-11-02 | Package configurations for low EMI circuits |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012537193A Division JP5883392B2 (ja) | 2009-11-02 | 2010-11-02 | 低emi回路のためのパッケージ構成 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2016096344A true JP2016096344A (ja) | 2016-05-26 |
Family
ID=43923070
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012537193A Active JP5883392B2 (ja) | 2009-11-02 | 2010-11-02 | 低emi回路のためのパッケージ構成 |
JP2015234373A Pending JP2016096344A (ja) | 2009-11-02 | 2015-12-01 | 低emi回路のためのパッケージ構成 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012537193A Active JP5883392B2 (ja) | 2009-11-02 | 2010-11-02 | 低emi回路のためのパッケージ構成 |
Country Status (7)
Country | Link |
---|---|
US (5) | US8138529B2 (ja) |
EP (1) | EP2497109B1 (ja) |
JP (2) | JP5883392B2 (ja) |
KR (1) | KR101737149B1 (ja) |
CN (2) | CN102598256B (ja) |
TW (2) | TWI538149B (ja) |
WO (1) | WO2011053981A2 (ja) |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4848187B2 (ja) * | 2006-01-17 | 2011-12-28 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
US7915643B2 (en) | 2007-09-17 | 2011-03-29 | Transphorm Inc. | Enhancement mode gallium nitride power devices |
US20090072269A1 (en) * | 2007-09-17 | 2009-03-19 | Chang Soo Suh | Gallium nitride diodes and integrated components |
US7965126B2 (en) | 2008-02-12 | 2011-06-21 | Transphorm Inc. | Bridge circuits and their components |
US8289065B2 (en) | 2008-09-23 | 2012-10-16 | Transphorm Inc. | Inductive load power switching circuits |
US8742459B2 (en) * | 2009-05-14 | 2014-06-03 | Transphorm Inc. | High voltage III-nitride semiconductor devices |
US8390000B2 (en) * | 2009-08-28 | 2013-03-05 | Transphorm Inc. | Semiconductor devices with field plates |
US8138529B2 (en) | 2009-11-02 | 2012-03-20 | Transphorm Inc. | Package configurations for low EMI circuits |
US8389977B2 (en) | 2009-12-10 | 2013-03-05 | Transphorm Inc. | Reverse side engineered III-nitride devices |
US8816497B2 (en) | 2010-01-08 | 2014-08-26 | Transphorm Inc. | Electronic devices and components for high efficiency power circuits |
US8624662B2 (en) | 2010-02-05 | 2014-01-07 | Transphorm Inc. | Semiconductor electronic components and circuits |
US9219058B2 (en) * | 2010-03-01 | 2015-12-22 | Infineon Technologies Americas Corp. | Efficient high voltage switching circuits and monolithic integration of same |
US8786327B2 (en) | 2011-02-28 | 2014-07-22 | Transphorm Inc. | Electronic components with reactive filters |
US8772842B2 (en) | 2011-03-04 | 2014-07-08 | Transphorm, Inc. | Semiconductor diodes with low reverse bias currents |
US8716141B2 (en) | 2011-03-04 | 2014-05-06 | Transphorm Inc. | Electrode configurations for semiconductor devices |
US9209176B2 (en) | 2011-12-07 | 2015-12-08 | Transphorm Inc. | Semiconductor modules and methods of forming the same |
US8648643B2 (en) * | 2012-02-24 | 2014-02-11 | Transphorm Inc. | Semiconductor power modules and devices |
US8803246B2 (en) | 2012-07-16 | 2014-08-12 | Transphorm Inc. | Semiconductor electronic components with integrated current limiters |
EP2741324B1 (en) * | 2012-12-10 | 2018-10-31 | IMEC vzw | III nitride transistor with source connected heat-spreading plate and method of making the same |
JP2014127715A (ja) * | 2012-12-27 | 2014-07-07 | Toshiba Corp | 半導体装置 |
US9087718B2 (en) | 2013-03-13 | 2015-07-21 | Transphorm Inc. | Enhancement-mode III-nitride devices |
US9059076B2 (en) | 2013-04-01 | 2015-06-16 | Transphorm Inc. | Gate drivers for circuits based on semiconductor devices |
JP6211829B2 (ja) * | 2013-06-25 | 2017-10-11 | 株式会社東芝 | 半導体装置 |
US9537425B2 (en) | 2013-07-09 | 2017-01-03 | Transphorm Inc. | Multilevel inverters and their components |
WO2015009514A1 (en) | 2013-07-19 | 2015-01-22 | Transphorm Inc. | Iii-nitride transistor including a p-type depleting layer |
US9362240B2 (en) * | 2013-12-06 | 2016-06-07 | Infineon Technologies Austria Ag | Electronic device |
CN104716128B (zh) | 2013-12-16 | 2019-11-22 | 台达电子企业管理(上海)有限公司 | 功率模块、电源变换器以及功率模块的制造方法 |
US9543940B2 (en) | 2014-07-03 | 2017-01-10 | Transphorm Inc. | Switching circuits having ferrite beads |
US9590494B1 (en) | 2014-07-17 | 2017-03-07 | Transphorm Inc. | Bridgeless power factor correction circuits |
US9559056B2 (en) | 2014-09-18 | 2017-01-31 | Infineon Technologies Austria Ag | Electronic component |
KR102377472B1 (ko) | 2015-03-10 | 2022-03-23 | 삼성전자주식회사 | 반도체 패키지 및 그 제조방법 |
US10200030B2 (en) | 2015-03-13 | 2019-02-05 | Transphorm Inc. | Paralleling of switching devices for high power circuits |
JP6511992B2 (ja) | 2015-06-30 | 2019-05-15 | オムロン株式会社 | 電力変換装置 |
JP6671124B2 (ja) * | 2015-08-10 | 2020-03-25 | ローム株式会社 | 窒化物半導体デバイス |
EP3168871B1 (en) * | 2015-11-11 | 2020-01-08 | Nexperia B.V. | Semiconductor device and a method of making a semiconductor device |
US9991776B2 (en) | 2015-12-16 | 2018-06-05 | Semiconductor Components Industries, Llc | Switched mode power supply converter |
US9899481B2 (en) | 2016-01-18 | 2018-02-20 | Infineon Technologies Austria Ag | Electronic component and switch circuit |
US9722065B1 (en) | 2016-02-03 | 2017-08-01 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device |
DE102016206501A1 (de) * | 2016-04-18 | 2017-10-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Leistungshalbleiterbauteil mit zwei lateralen Leistungshalbleiterbauelementen in Halbbrückenschaltung |
FR3053833B1 (fr) * | 2016-07-08 | 2018-11-16 | Exagan | Circuit integre comprenant une puce formee d'un transistor a haute tension et comprenant une puce formee d'un transistor a basse tension |
WO2017203187A1 (fr) * | 2016-05-26 | 2017-11-30 | Exagan | Circuit intégré comprenant une pluralité de puces formées d'un transistor à haute tension et comprenant une puce formée d'un transistor à basse tension |
US9881862B1 (en) | 2016-09-20 | 2018-01-30 | Infineon Technologies Austria Ag | Top side cooling for GaN power device |
US10319648B2 (en) | 2017-04-17 | 2019-06-11 | Transphorm Inc. | Conditions for burn-in of high power semiconductors |
US10630285B1 (en) | 2017-11-21 | 2020-04-21 | Transphorm Technology, Inc. | Switching circuits having drain connected ferrite beads |
US10199487B1 (en) * | 2018-05-15 | 2019-02-05 | The Florida International University Board Of Trustees | Multi-drain gallium-nitride module with multiple voltage ratings |
US10756207B2 (en) | 2018-10-12 | 2020-08-25 | Transphorm Technology, Inc. | Lateral III-nitride devices including a vertical gate module |
WO2020191357A1 (en) | 2019-03-21 | 2020-09-24 | Transphorm Technology, Inc. | Integrated design for iii-nitride devices |
DE102020106492A1 (de) | 2019-04-12 | 2020-10-15 | Infineon Technologies Ag | Chip -package, verfahren zum bilden eines chip -packages, halbleitervorrichtung, halbleiteranordnung, dreiphasensystem, verfahren zum bilden einer halbleitervorrichtung und verfahren zum bilden einer halbleiteranordnung |
KR102590673B1 (ko) * | 2019-07-12 | 2023-10-17 | 알파 앤드 오메가 세미컨덕터 (케이맨) 리미티드 | 고출력 밀도 충전 응용을 위한 초고속 과도 응답(str) ac/dc 컨버터 |
KR102587044B1 (ko) * | 2019-07-12 | 2023-10-06 | 알파 앤드 오메가 세미컨덕터 (케이맨) 리미티드 | 고출력 밀도 충전 응용을 위한 초고속 과도 응답(str) ac/dc 컨버터 |
WO2021192218A1 (ja) * | 2020-03-27 | 2021-09-30 | 三菱電機株式会社 | 半導体パワーモジュールおよび電力変換装置 |
US11749656B2 (en) * | 2020-06-16 | 2023-09-05 | Transphorm Technology, Inc. | Module configurations for integrated III-Nitride devices |
US20220037519A1 (en) * | 2020-07-29 | 2022-02-03 | Fu-Chang Hsu | Transistor structures and associated processes |
JP2023537713A (ja) | 2020-08-05 | 2023-09-05 | トランスフォーム テクノロジー,インコーポレーテッド | 空乏層を有するiii族窒化物デバイス |
WO2023122694A2 (en) * | 2021-12-22 | 2023-06-29 | Transphorm Technology, Inc. | Module assembly of multiple semiconductor devices with insulating substrates |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05328742A (ja) * | 1992-05-19 | 1993-12-10 | Matsushita Electric Ind Co Ltd | 直流−交流変換器 |
JP2005509278A (ja) * | 2001-09-01 | 2005-04-07 | オイペク ゲーエムベーハー | 電力半導体モジュール |
JP2006049402A (ja) * | 2004-08-02 | 2006-02-16 | Matsushita Electric Ind Co Ltd | インバータ装置 |
JP2006223016A (ja) * | 2005-02-08 | 2006-08-24 | Renesas Technology Corp | 電源システム、マルチチップモジュール、システムインパッケージ、および非絶縁型dc/dcコンバータ |
JP2008187167A (ja) * | 2006-12-11 | 2008-08-14 | Internatl Rectifier Corp | パワー管理装置 |
JP2008198735A (ja) * | 2007-02-09 | 2008-08-28 | Sanken Electric Co Ltd | 整流素子を含む複合半導体装置 |
JP2008244394A (ja) * | 2007-03-29 | 2008-10-09 | Sumitomo Electric Ind Ltd | 半導体装置 |
JP2009218475A (ja) * | 2008-03-12 | 2009-09-24 | Sharp Corp | 出力制御装置、ならびに、これを用いたac/dc電源装置及び回路装置 |
Family Cites Families (139)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55149871A (en) | 1978-07-31 | 1980-11-21 | Fujitsu Ltd | Line voltage detector |
JPS55136726A (en) * | 1979-04-11 | 1980-10-24 | Nec Corp | High voltage mos inverter and its drive method |
JPS59168677A (ja) * | 1983-03-14 | 1984-09-22 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US5952956A (en) * | 1984-12-03 | 1999-09-14 | Time Domain Corporation | Time domain radio transmission system |
US4707726A (en) | 1985-04-29 | 1987-11-17 | United Technologies Automotive, Inc. | Heat sink mounting arrangement for a semiconductor |
US4665508A (en) | 1985-05-23 | 1987-05-12 | Texas Instruments Incorporated | Gallium arsenide MESFET memory |
DE3529869A1 (de) | 1985-08-21 | 1987-02-26 | Basf Ag | Verfahren zum hydrophobieren von leder und pelzen |
US4728826A (en) * | 1986-03-19 | 1988-03-01 | Siemens Aktiengesellschaft | MOSFET switch with inductive load |
US4808853A (en) * | 1987-11-25 | 1989-02-28 | Triquint Semiconductor, Inc. | Tristate output circuit with selectable output impedance |
JP2901091B2 (ja) * | 1990-09-27 | 1999-06-02 | 株式会社日立製作所 | 半導体装置 |
US6143582A (en) * | 1990-12-31 | 2000-11-07 | Kopin Corporation | High density electronic circuit modules |
JPH0575040A (ja) | 1991-09-13 | 1993-03-26 | Fujitsu Ltd | 半導体集積回路装置 |
JPH0667744A (ja) | 1992-08-18 | 1994-03-11 | Fujitsu Ltd | 定電圧回路 |
US5379209A (en) * | 1993-02-09 | 1995-01-03 | Performance Controls, Inc. | Electronic switching circuit |
US5493487A (en) * | 1993-02-09 | 1996-02-20 | Performance Controls, Inc. | Electronic switching circuit |
JPH0748909Y2 (ja) | 1993-03-03 | 1995-11-08 | 株式会社日中製作所 | 可変型ラッチ受け装置 |
US5637922A (en) * | 1994-02-07 | 1997-06-10 | General Electric Company | Wireless radio frequency power semiconductor devices using high density interconnect |
US6384492B1 (en) * | 1995-05-04 | 2002-05-07 | Spinel Llc | Power semiconductor packaging |
JP3665419B2 (ja) | 1996-05-02 | 2005-06-29 | 新電元工業株式会社 | 誘導性負荷駆動方法、及びhブリッジ回路制御装置 |
US6172550B1 (en) | 1996-08-16 | 2001-01-09 | American Superconducting Corporation | Cryogenically-cooled switching circuit |
JP3527034B2 (ja) * | 1996-09-20 | 2004-05-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US6008684A (en) * | 1996-10-23 | 1999-12-28 | Industrial Technology Research Institute | CMOS output buffer with CMOS-controlled lateral SCR devices |
US5789951A (en) | 1997-01-31 | 1998-08-04 | Motorola, Inc. | Monolithic clamping circuit and method of preventing transistor avalanche breakdown |
JP3731358B2 (ja) | 1998-09-25 | 2006-01-05 | 株式会社村田製作所 | 高周波電力増幅回路 |
US6107844A (en) * | 1998-09-28 | 2000-08-22 | Tripath Technology, Inc. | Methods and apparatus for reducing MOSFET body diode conduction in a half-bridge configuration |
JP3275851B2 (ja) | 1998-10-13 | 2002-04-22 | 松下電器産業株式会社 | 高周波集積回路 |
JP3049427B2 (ja) * | 1998-10-21 | 2000-06-05 | 株式会社ハイデン研究所 | 正負パルス式高周波スイッチング電源 |
US6395593B1 (en) * | 1999-05-06 | 2002-05-28 | Texas Instruments Incorporated | Method of manufacturing high side and low side guard rings for lowest parasitic performance in an H-bridge configuration |
US6864131B2 (en) * | 1999-06-02 | 2005-03-08 | Arizona State University | Complementary Schottky junction transistors and methods of forming the same |
JP3458768B2 (ja) * | 1999-06-10 | 2003-10-20 | 株式会社デンソー | 負荷駆動装置 |
US6556053B2 (en) * | 2001-02-06 | 2003-04-29 | Harman International Industries, Incorporated | Half-bridge gate driver optimized for hard-switching |
US6455905B1 (en) * | 2001-04-05 | 2002-09-24 | Ericsson Inc. | Single chip push-pull power transistor device |
US6650169B2 (en) | 2001-10-01 | 2003-11-18 | Koninklijke Philips Electronics N.V. | Gate driver apparatus having an energy recovering circuit |
JP2003168694A (ja) * | 2001-12-03 | 2003-06-13 | Mitsubishi Electric Corp | 半導体パッケージ |
JP2003244943A (ja) | 2002-02-13 | 2003-08-29 | Honda Motor Co Ltd | 電源装置の昇圧装置 |
US7122884B2 (en) * | 2002-04-16 | 2006-10-17 | Fairchild Semiconductor Corporation | Robust leaded molded packages and methods for forming the same |
DE10219760A1 (de) * | 2002-05-02 | 2003-11-20 | Eupec Gmbh & Co Kg | Halbbrückenschaltung |
JP3731562B2 (ja) | 2002-05-22 | 2006-01-05 | 日産自動車株式会社 | 電流制御型素子用駆動回路 |
US6975023B2 (en) | 2002-09-04 | 2005-12-13 | International Rectifier Corporation | Co-packaged control circuit, transistor and inverted diode |
AU2003263510A1 (en) * | 2002-10-29 | 2004-05-25 | Koninklijke Philips Electronics N.V. | Bi-directional double nmos switch |
JP4385205B2 (ja) * | 2002-12-16 | 2009-12-16 | 日本電気株式会社 | 電界効果トランジスタ |
US20040227476A1 (en) * | 2002-12-19 | 2004-11-18 | International Rectifier Corp. | Flexible inverter power module for motor drives |
US6825559B2 (en) * | 2003-01-02 | 2004-11-30 | Cree, Inc. | Group III nitride based flip-chip intergrated circuit and method for fabricating |
TW583636B (en) | 2003-03-11 | 2004-04-11 | Toppoly Optoelectronics Corp | Source follower capable of compensating the threshold voltage |
JP4241106B2 (ja) | 2003-03-12 | 2009-03-18 | シャープ株式会社 | 半導体装置及びその製造方法 |
JP4531343B2 (ja) | 2003-03-26 | 2010-08-25 | 株式会社半導体エネルギー研究所 | 駆動回路 |
GB0308674D0 (en) * | 2003-04-15 | 2003-05-21 | Koninkl Philips Electronics Nv | Driver for inductive load |
JP4248953B2 (ja) * | 2003-06-30 | 2009-04-02 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
EP1494354B1 (en) * | 2003-07-04 | 2010-12-01 | Dialog Semiconductor GmbH | High-voltage interface and driver control circuit |
JP2005044873A (ja) * | 2003-07-24 | 2005-02-17 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
JP3973638B2 (ja) | 2003-09-05 | 2007-09-12 | 三洋電機株式会社 | 電源ユニット及びこれを有する電源システム |
US7501669B2 (en) | 2003-09-09 | 2009-03-10 | Cree, Inc. | Wide bandgap transistor devices with field plates |
US6900657B2 (en) * | 2003-09-24 | 2005-05-31 | Saia-Burgess Automotive, Inc. | Stall detection circuit and method |
DE10344841B4 (de) * | 2003-09-26 | 2010-02-25 | Infineon Technologies Ag | Ansteuerschaltung für ein Zündelement eines Insassenschutzsystems |
US7166867B2 (en) | 2003-12-05 | 2007-01-23 | International Rectifier Corporation | III-nitride device with improved layout geometry |
US7193396B2 (en) | 2003-12-24 | 2007-03-20 | Potentia Semiconductor Corporation | DC converters having buck or boost configurations |
JP4658481B2 (ja) * | 2004-01-16 | 2011-03-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7382001B2 (en) * | 2004-01-23 | 2008-06-03 | International Rectifier Corporation | Enhancement mode III-nitride FET |
US7550781B2 (en) | 2004-02-12 | 2009-06-23 | International Rectifier Corporation | Integrated III-nitride power devices |
US7465997B2 (en) * | 2004-02-12 | 2008-12-16 | International Rectifier Corporation | III-nitride bidirectional switch |
JP2005295794A (ja) | 2004-03-31 | 2005-10-20 | Matsushita Electric Ind Co Ltd | アクティブダイオード |
JP2005302951A (ja) * | 2004-04-09 | 2005-10-27 | Toshiba Corp | 電力用半導体装置パッケージ |
JP2006032552A (ja) * | 2004-07-14 | 2006-02-02 | Toshiba Corp | 窒化物含有半導体装置 |
JP2006033723A (ja) | 2004-07-21 | 2006-02-02 | Sharp Corp | 電力制御用光結合素子およびこの電力制御用光結合素子を用いた電子機器 |
US7227198B2 (en) * | 2004-08-11 | 2007-06-05 | International Rectifier Corporation | Half-bridge package |
JP4637553B2 (ja) | 2004-11-22 | 2011-02-23 | パナソニック株式会社 | ショットキーバリアダイオード及びそれを用いた集積回路 |
CN100359686C (zh) | 2004-11-30 | 2008-01-02 | 万代半导体元件(上海)有限公司 | 金属氧化物半导体场效应晶体管和肖特基二极管结合的瘦小外形封装 |
JP2006173754A (ja) | 2004-12-13 | 2006-06-29 | Oki Electric Ind Co Ltd | 高周波スイッチ |
US7116567B2 (en) * | 2005-01-05 | 2006-10-03 | Velox Semiconductor Corporation | GaN semiconductor based voltage conversion device |
US7239108B2 (en) * | 2005-01-31 | 2007-07-03 | Texas Instruments Incorporated | Method for stepper motor position referencing |
US7612602B2 (en) | 2005-01-31 | 2009-11-03 | Queen's University At Kingston | Resonant gate drive circuits |
US7368980B2 (en) | 2005-04-25 | 2008-05-06 | Triquint Semiconductor, Inc. | Producing reference voltages using transistors |
US7547964B2 (en) * | 2005-04-25 | 2009-06-16 | International Rectifier Corporation | Device packages having a III-nitride based power semiconductor device |
US7408399B2 (en) | 2005-06-27 | 2008-08-05 | International Rectifier Corporation | Active driving of normally on, normally off cascoded configuration devices through asymmetrical CMOS |
US7855401B2 (en) | 2005-06-29 | 2010-12-21 | Cree, Inc. | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
JP4730529B2 (ja) | 2005-07-13 | 2011-07-20 | サンケン電気株式会社 | 電界効果トランジスタ |
US7548112B2 (en) | 2005-07-21 | 2009-06-16 | Cree, Inc. | Switch mode power amplifier using MIS-HEMT with field plate extension |
JP2007059595A (ja) * | 2005-08-24 | 2007-03-08 | Toshiba Corp | 窒化物半導体素子 |
US7482788B2 (en) * | 2005-10-12 | 2009-01-27 | System General Corp. | Buck converter for both full load and light load operations |
US7932539B2 (en) | 2005-11-29 | 2011-04-26 | The Hong Kong University Of Science And Technology | Enhancement-mode III-N devices, circuits, and methods |
US20070138515A1 (en) * | 2005-12-19 | 2007-06-21 | M/A-Com, Inc. | Dual field plate MESFET |
US20090297078A1 (en) * | 2005-12-22 | 2009-12-03 | Ntn Corporation | Fluid bearing device |
JP5065595B2 (ja) | 2005-12-28 | 2012-11-07 | 株式会社東芝 | 窒化物系半導体装置 |
US7592688B2 (en) * | 2006-01-13 | 2009-09-22 | International Rectifier Corporation | Semiconductor package |
US20070164428A1 (en) * | 2006-01-18 | 2007-07-19 | Alan Elbanhawy | High power module with open frame package |
JP2007215331A (ja) | 2006-02-10 | 2007-08-23 | Hitachi Ltd | 昇圧回路 |
US7521907B2 (en) | 2006-03-06 | 2009-04-21 | Enpirion, Inc. | Controller for a power converter and method of operating the same |
JP2007242853A (ja) | 2006-03-08 | 2007-09-20 | Sanken Electric Co Ltd | 半導体基体及びこれを使用した半導体装置 |
JP2007294769A (ja) * | 2006-04-26 | 2007-11-08 | Toshiba Corp | 窒化物半導体素子 |
US20080017998A1 (en) * | 2006-07-19 | 2008-01-24 | Pavio Jeanne S | Semiconductor component and method of manufacture |
US7893676B2 (en) | 2006-07-20 | 2011-02-22 | Enpirion, Inc. | Driver for switch and a method of driving the same |
US7902809B2 (en) | 2006-11-28 | 2011-03-08 | International Rectifier Corporation | DC/DC converter including a depletion mode power switch |
US20080134267A1 (en) | 2006-12-04 | 2008-06-05 | Alcatel Lucent | Remote Access to Internet Protocol Television by Enabling Place Shifting Utilizing a Telephone Company Network |
JP2008164796A (ja) | 2006-12-27 | 2008-07-17 | Sony Corp | 画素回路および表示装置とその駆動方法 |
US7378883B1 (en) | 2007-01-03 | 2008-05-27 | Tpo Displays Corp. | Source follower and electronic system utilizing the same |
US8014110B2 (en) | 2007-01-22 | 2011-09-06 | Johnson Controls Technology Company | Variable speed drive with integral bypass contactor |
US7853812B2 (en) * | 2007-02-07 | 2010-12-14 | International Business Machines Corporation | Reducing power usage in a software application |
US8188596B2 (en) * | 2007-02-09 | 2012-05-29 | Infineon Technologies Ag | Multi-chip module |
JP2008199771A (ja) | 2007-02-13 | 2008-08-28 | Fujitsu Ten Ltd | 昇圧回路制御装置、及び昇圧回路 |
KR101391925B1 (ko) * | 2007-02-28 | 2014-05-07 | 페어차일드코리아반도체 주식회사 | 반도체 패키지 및 이를 제조하기 위한 반도체 패키지 금형 |
US7453107B1 (en) * | 2007-05-04 | 2008-11-18 | Dsm Solutions, Inc. | Method for applying a stress layer to a semiconductor device and device formed therefrom |
US7719055B1 (en) | 2007-05-10 | 2010-05-18 | Northrop Grumman Systems Corporation | Cascode power switch topologies |
US7477082B2 (en) | 2007-05-15 | 2009-01-13 | Freescale Semiconductor, Inc. | Method and circuit for driving H-bridge that reduces switching noise |
JP2008288289A (ja) * | 2007-05-16 | 2008-11-27 | Oki Electric Ind Co Ltd | 電界効果トランジスタとその製造方法 |
JP4478175B2 (ja) | 2007-06-26 | 2010-06-09 | 株式会社東芝 | 半導体装置 |
US20090251119A1 (en) * | 2007-08-13 | 2009-10-08 | Goran Stojcic | Three chip package |
JP4775859B2 (ja) | 2007-08-24 | 2011-09-21 | シャープ株式会社 | 窒化物半導体装置とそれを含む電力変換装置 |
EP2887402B1 (en) | 2007-09-12 | 2019-06-12 | Transphorm Inc. | III-nitride bidirectional switches |
US7795642B2 (en) | 2007-09-14 | 2010-09-14 | Transphorm, Inc. | III-nitride devices with recessed gates |
US7915643B2 (en) | 2007-09-17 | 2011-03-29 | Transphorm Inc. | Enhancement mode gallium nitride power devices |
US20090072269A1 (en) * | 2007-09-17 | 2009-03-19 | Chang Soo Suh | Gallium nitride diodes and integrated components |
WO2009076076A2 (en) * | 2007-12-10 | 2009-06-18 | Transphorm Inc. | Insulated gate e-mode transistors |
JP5130906B2 (ja) | 2007-12-26 | 2013-01-30 | サンケン電気株式会社 | スイッチ装置 |
US8063616B2 (en) | 2008-01-11 | 2011-11-22 | International Rectifier Corporation | Integrated III-nitride power converter circuit |
US7639064B2 (en) * | 2008-01-21 | 2009-12-29 | Eutech Microelectronic Inc. | Drive circuit for reducing inductive kickback voltage |
US7965126B2 (en) | 2008-02-12 | 2011-06-21 | Transphorm Inc. | Bridge circuits and their components |
JP2009200338A (ja) * | 2008-02-22 | 2009-09-03 | Renesas Technology Corp | 半導体装置の製造方法 |
US7920013B2 (en) | 2008-04-18 | 2011-04-05 | Linear Technology Corporation | Systems and methods for oscillation suppression in switching circuits |
US8519438B2 (en) | 2008-04-23 | 2013-08-27 | Transphorm Inc. | Enhancement mode III-N HEMTs |
US8957642B2 (en) | 2008-05-06 | 2015-02-17 | International Rectifier Corporation | Enhancement mode III-nitride switch with increased efficiency and operating frequency |
US7804328B2 (en) | 2008-06-23 | 2010-09-28 | Texas Instruments Incorporated | Source/emitter follower buffer driving a switching load and having improved linearity |
JP5524462B2 (ja) * | 2008-08-06 | 2014-06-18 | シャープ株式会社 | 半導体装置 |
TWI371163B (en) * | 2008-09-12 | 2012-08-21 | Glacialtech Inc | Unidirectional mosfet and applications thereof |
US8289065B2 (en) | 2008-09-23 | 2012-10-16 | Transphorm Inc. | Inductive load power switching circuits |
US7893791B2 (en) | 2008-10-22 | 2011-02-22 | The Boeing Company | Gallium nitride switch methodology |
US8084783B2 (en) | 2008-11-10 | 2011-12-27 | International Rectifier Corporation | GaN-based device cascoded with an integrated FET/Schottky diode device |
US7898004B2 (en) | 2008-12-10 | 2011-03-01 | Transphorm Inc. | Semiconductor heterostructure diodes |
US8054110B2 (en) | 2009-01-20 | 2011-11-08 | University Of South Carolina | Driver circuit for gallium nitride (GaN) heterojunction field effect transistors (HFETs) |
US7884394B2 (en) | 2009-02-09 | 2011-02-08 | Transphorm Inc. | III-nitride devices and circuits |
US8681518B2 (en) | 2009-07-21 | 2014-03-25 | Cree, Inc. | High speed rectifier circuit |
US8138529B2 (en) | 2009-11-02 | 2012-03-20 | Transphorm Inc. | Package configurations for low EMI circuits |
US8816497B2 (en) | 2010-01-08 | 2014-08-26 | Transphorm Inc. | Electronic devices and components for high efficiency power circuits |
US8624662B2 (en) | 2010-02-05 | 2014-01-07 | Transphorm Inc. | Semiconductor electronic components and circuits |
US8530904B2 (en) | 2010-03-19 | 2013-09-10 | Infineon Technologies Austria Ag | Semiconductor device including a normally-on transistor and a normally-off transistor |
US8742460B2 (en) | 2010-12-15 | 2014-06-03 | Transphorm Inc. | Transistors with isolation regions |
US8786327B2 (en) | 2011-02-28 | 2014-07-22 | Transphorm Inc. | Electronic components with reactive filters |
US9166028B2 (en) | 2011-05-31 | 2015-10-20 | Infineon Technologies Austria Ag | Circuit configured to adjust the activation state of transistors based on load conditions |
US9209176B2 (en) | 2011-12-07 | 2015-12-08 | Transphorm Inc. | Semiconductor modules and methods of forming the same |
US8648643B2 (en) | 2012-02-24 | 2014-02-11 | Transphorm Inc. | Semiconductor power modules and devices |
-
2009
- 2009-11-02 US US12/611,018 patent/US8138529B2/en active Active
-
2010
- 2010-10-26 TW TW099136560A patent/TWI538149B/zh active
- 2010-10-26 TW TW105110310A patent/TWI573240B/zh active
- 2010-11-02 KR KR1020127011360A patent/KR101737149B1/ko active IP Right Grant
- 2010-11-02 WO PCT/US2010/055129 patent/WO2011053981A2/en active Application Filing
- 2010-11-02 CN CN201080049604.5A patent/CN102598256B/zh active Active
- 2010-11-02 EP EP10827654.4A patent/EP2497109B1/en active Active
- 2010-11-02 CN CN201610391042.1A patent/CN106098660A/zh active Pending
- 2010-11-02 JP JP2012537193A patent/JP5883392B2/ja active Active
-
2012
- 2012-01-23 US US13/355,885 patent/US8455931B2/en active Active
-
2013
- 2013-04-30 US US13/873,855 patent/US8592974B2/en active Active
- 2013-10-25 US US14/063,438 patent/US8890314B2/en active Active
-
2014
- 2014-09-09 US US14/480,980 patent/US9190295B2/en active Active
-
2015
- 2015-12-01 JP JP2015234373A patent/JP2016096344A/ja active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05328742A (ja) * | 1992-05-19 | 1993-12-10 | Matsushita Electric Ind Co Ltd | 直流−交流変換器 |
JP2005509278A (ja) * | 2001-09-01 | 2005-04-07 | オイペク ゲーエムベーハー | 電力半導体モジュール |
JP2006049402A (ja) * | 2004-08-02 | 2006-02-16 | Matsushita Electric Ind Co Ltd | インバータ装置 |
JP2006223016A (ja) * | 2005-02-08 | 2006-08-24 | Renesas Technology Corp | 電源システム、マルチチップモジュール、システムインパッケージ、および非絶縁型dc/dcコンバータ |
JP2008187167A (ja) * | 2006-12-11 | 2008-08-14 | Internatl Rectifier Corp | パワー管理装置 |
JP2008198735A (ja) * | 2007-02-09 | 2008-08-28 | Sanken Electric Co Ltd | 整流素子を含む複合半導体装置 |
JP2008244394A (ja) * | 2007-03-29 | 2008-10-09 | Sumitomo Electric Ind Ltd | 半導体装置 |
JP2009218475A (ja) * | 2008-03-12 | 2009-09-24 | Sharp Corp | 出力制御装置、ならびに、これを用いたac/dc電源装置及び回路装置 |
Also Published As
Publication number | Publication date |
---|---|
CN106098660A (zh) | 2016-11-09 |
WO2011053981A2 (en) | 2011-05-05 |
TWI573240B (zh) | 2017-03-01 |
US20130234257A1 (en) | 2013-09-12 |
EP2497109B1 (en) | 2021-01-27 |
US20140377911A1 (en) | 2014-12-25 |
TW201635473A (zh) | 2016-10-01 |
US20110101466A1 (en) | 2011-05-05 |
US8890314B2 (en) | 2014-11-18 |
TWI538149B (zh) | 2016-06-11 |
US9190295B2 (en) | 2015-11-17 |
JP5883392B2 (ja) | 2016-03-15 |
TW201126686A (en) | 2011-08-01 |
US8138529B2 (en) | 2012-03-20 |
US20120132973A1 (en) | 2012-05-31 |
US20140048849A1 (en) | 2014-02-20 |
EP2497109A2 (en) | 2012-09-12 |
US8455931B2 (en) | 2013-06-04 |
KR20120098667A (ko) | 2012-09-05 |
CN102598256A (zh) | 2012-07-18 |
US8592974B2 (en) | 2013-11-26 |
KR101737149B1 (ko) | 2017-05-17 |
EP2497109A4 (en) | 2017-04-19 |
CN102598256B (zh) | 2016-07-06 |
JP2013509732A (ja) | 2013-03-14 |
WO2011053981A3 (en) | 2011-09-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5883392B2 (ja) | 低emi回路のためのパッケージ構成 | |
US9660640B2 (en) | Switching circuits having ferrite beads | |
US10607978B2 (en) | Semiconductor device and electronic apparatus | |
JP5883799B2 (ja) | 高効率電源回路のための電子デバイスおよび部品 | |
US7884394B2 (en) | III-nitride devices and circuits | |
US20110193619A1 (en) | Semiconductor electronic components and circuits | |
US10630285B1 (en) | Switching circuits having drain connected ferrite beads | |
CN112420681B (zh) | 一种芯片封装结构 | |
CN116075925A (zh) | 具有贯通通路结构的iii-氮化物器件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7426 Effective date: 20160524 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20160524 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160912 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161004 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20170704 |