JP5871359B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5871359B2
JP5871359B2 JP2011094895A JP2011094895A JP5871359B2 JP 5871359 B2 JP5871359 B2 JP 5871359B2 JP 2011094895 A JP2011094895 A JP 2011094895A JP 2011094895 A JP2011094895 A JP 2011094895A JP 5871359 B2 JP5871359 B2 JP 5871359B2
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film
oxide semiconductor
oxygen
semiconductor film
insulating film
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Japanese (ja)
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JP2011243971A5 (OSRAM
JP2011243971A (ja
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山崎　舜平
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2011243971A5 publication Critical patent/JP2011243971A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
JP2011094895A 2010-04-23 2011-04-21 半導体装置の作製方法 Active JP5871359B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011094895A JP5871359B2 (ja) 2010-04-23 2011-04-21 半導体装置の作製方法

Applications Claiming Priority (3)

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JP2010100201 2010-04-23
JP2010100201 2010-04-23
JP2011094895A JP5871359B2 (ja) 2010-04-23 2011-04-21 半導体装置の作製方法

Related Child Applications (4)

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JP2012159264A Division JP5084971B1 (ja) 2010-04-23 2012-07-18 半導体装置の作製方法
JP2012192748A Division JP5608715B2 (ja) 2010-04-23 2012-09-03 半導体装置の作製方法
JP2014101029A Division JP5801923B2 (ja) 2010-04-23 2014-05-15 半導体装置の作製方法
JP2016002477A Division JP6054556B2 (ja) 2010-04-23 2016-01-08 半導体装置の作製方法

Publications (3)

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JP2011243971A JP2011243971A (ja) 2011-12-01
JP2011243971A5 JP2011243971A5 (OSRAM) 2014-05-29
JP5871359B2 true JP5871359B2 (ja) 2016-03-01

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JP2011094895A Active JP5871359B2 (ja) 2010-04-23 2011-04-21 半導体装置の作製方法
JP2012159264A Active JP5084971B1 (ja) 2010-04-23 2012-07-18 半導体装置の作製方法
JP2012192748A Active JP5608715B2 (ja) 2010-04-23 2012-09-03 半導体装置の作製方法
JP2014101029A Active JP5801923B2 (ja) 2010-04-23 2014-05-15 半導体装置の作製方法
JP2016002477A Active JP6054556B2 (ja) 2010-04-23 2016-01-08 半導体装置の作製方法
JP2016232179A Active JP6488271B2 (ja) 2010-04-23 2016-11-30 半導体装置の作製方法

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JP2012192748A Active JP5608715B2 (ja) 2010-04-23 2012-09-03 半導体装置の作製方法
JP2014101029A Active JP5801923B2 (ja) 2010-04-23 2014-05-15 半導体装置の作製方法
JP2016002477A Active JP6054556B2 (ja) 2010-04-23 2016-01-08 半導体装置の作製方法
JP2016232179A Active JP6488271B2 (ja) 2010-04-23 2016-11-30 半導体装置の作製方法

Country Status (7)

Country Link
US (2) US8865534B2 (OSRAM)
JP (6) JP5871359B2 (OSRAM)
KR (2) KR101826831B1 (OSRAM)
CN (2) CN106057907B (OSRAM)
DE (1) DE112011101410B4 (OSRAM)
TW (2) TWI550879B (OSRAM)
WO (1) WO2011132556A1 (OSRAM)

Families Citing this family (83)

* Cited by examiner, † Cited by third party
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WO2011132591A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
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CN104465408B (zh) 2010-04-23 2017-09-15 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
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KR101540039B1 (ko) 2010-04-23 2015-07-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
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KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
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KR102268435B1 (ko) * 2013-12-04 2021-06-23 주성엔지니어링(주) 게이트 절연막 및 그를 이용한 박막 트랜지스터
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