JP5316824B2 - 半導体材料の製造 - Google Patents

半導体材料の製造 Download PDF

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Publication number
JP5316824B2
JP5316824B2 JP2011549269A JP2011549269A JP5316824B2 JP 5316824 B2 JP5316824 B2 JP 5316824B2 JP 2011549269 A JP2011549269 A JP 2011549269A JP 2011549269 A JP2011549269 A JP 2011549269A JP 5316824 B2 JP5316824 B2 JP 5316824B2
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wafer
modifier
silicon
donor
product
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Japanese (ja)
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JP2012517123A (ja
JP2012517123A5 (enExample
Inventor
シンハ，ニシャン
エス． サンデュ，ガーテ
スマイズ，ジョン
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マイクロン テクノロジー， インク．
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2011549269A 2009-02-04 2010-02-04 半導体材料の製造 Active JP5316824B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/365,734 2009-02-04
US12/365,734 US7927975B2 (en) 2009-02-04 2009-02-04 Semiconductor material manufacture
PCT/US2010/023230 WO2010091200A2 (en) 2009-02-04 2010-02-04 Semiconductor material manufacture

Publications (3)

Publication Number Publication Date
JP2012517123A JP2012517123A (ja) 2012-07-26
JP2012517123A5 JP2012517123A5 (enExample) 2013-03-28
JP5316824B2 true JP5316824B2 (ja) 2013-10-16

Family

ID=42396993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011549269A Active JP5316824B2 (ja) 2009-02-04 2010-02-04 半導体材料の製造

Country Status (7)

Country Link
US (3) US7927975B2 (enExample)
EP (1) EP2394292A4 (enExample)
JP (1) JP5316824B2 (enExample)
KR (1) KR101597386B1 (enExample)
CN (1) CN102341890B (enExample)
TW (1) TWI423309B (enExample)
WO (1) WO2010091200A2 (enExample)

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EP2695183A1 (de) * 2011-04-08 2014-02-12 Ev Group E. Thallner GmbH Verfahren zum permanenten bonden von wafern
US10094988B2 (en) * 2012-08-31 2018-10-09 Micron Technology, Inc. Method of forming photonics structures
US10546965B2 (en) 2013-12-05 2020-01-28 The Board Of Regents Of The University Of Oklahoma Thermophotovoltaic materials, methods of deposition, and devices
CN108365083B (zh) * 2018-02-07 2022-03-08 济南晶正电子科技有限公司 用于声表面波器件的复合压电衬底的制造方法
CN109904065B (zh) * 2019-02-21 2021-05-11 中国科学院上海微系统与信息技术研究所 异质结构的制备方法
US11817304B2 (en) * 2019-12-30 2023-11-14 Micron Technology, Inc. Method of manufacturing microelectronic devices, related devices, systems, and apparatus

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