FR2849269B1 - Procede de realisation de cavites dans une plaque de silicium - Google Patents

Procede de realisation de cavites dans une plaque de silicium

Info

Publication number
FR2849269B1
FR2849269B1 FR0216409A FR0216409A FR2849269B1 FR 2849269 B1 FR2849269 B1 FR 2849269B1 FR 0216409 A FR0216409 A FR 0216409A FR 0216409 A FR0216409 A FR 0216409A FR 2849269 B1 FR2849269 B1 FR 2849269B1
Authority
FR
France
Prior art keywords
silicon plate
producing cavities
cavities
producing
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0216409A
Other languages
English (en)
Other versions
FR2849269A1 (fr
Inventor
Walter Schwarzenbach
Christophe Maleville
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0216409A priority Critical patent/FR2849269B1/fr
Priority to US10/733,729 priority patent/US6987051B2/en
Priority to EP03799651A priority patent/EP1573802B1/fr
Priority to AU2003299368A priority patent/AU2003299368A1/en
Priority to AT03799651T priority patent/ATE415703T1/de
Priority to JP2005509712A priority patent/JP4942343B2/ja
Priority to PCT/FR2003/003820 priority patent/WO2004059725A1/fr
Priority to DE60324960T priority patent/DE60324960D1/de
Publication of FR2849269A1 publication Critical patent/FR2849269A1/fr
Application granted granted Critical
Publication of FR2849269B1 publication Critical patent/FR2849269B1/fr
Priority to US11/261,793 priority patent/US20060054973A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00047—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/005—Bulk micromachining
    • B81C1/00507—Formation of buried layers by techniques other than deposition, e.g. by deep implantation of elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
FR0216409A 2002-12-20 2002-12-20 Procede de realisation de cavites dans une plaque de silicium Expired - Fee Related FR2849269B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR0216409A FR2849269B1 (fr) 2002-12-20 2002-12-20 Procede de realisation de cavites dans une plaque de silicium
US10/733,729 US6987051B2 (en) 2002-12-20 2003-12-12 Method of making cavities in a semiconductor wafer
AU2003299368A AU2003299368A1 (en) 2002-12-20 2003-12-19 Method of the production of cavities in a silicon sheet
AT03799651T ATE415703T1 (de) 2002-12-20 2003-12-19 Herstellung von hohlräumen in einer siliziumscheibe
EP03799651A EP1573802B1 (fr) 2002-12-20 2003-12-19 Procede de realisation de cavites dans une plaque de silicium
JP2005509712A JP4942343B2 (ja) 2002-12-20 2003-12-19 シリコン板にキャビティーを形成する方法
PCT/FR2003/003820 WO2004059725A1 (fr) 2002-12-20 2003-12-19 Procede de realisation de cavites dans une plaque de silicium
DE60324960T DE60324960D1 (de) 2002-12-20 2003-12-19 Herstellung von hohlräumen in einer siliziumscheibe
US11/261,793 US20060054973A1 (en) 2002-12-20 2005-10-31 Method of making cavities in a semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0216409A FR2849269B1 (fr) 2002-12-20 2002-12-20 Procede de realisation de cavites dans une plaque de silicium

Publications (2)

Publication Number Publication Date
FR2849269A1 FR2849269A1 (fr) 2004-06-25
FR2849269B1 true FR2849269B1 (fr) 2005-07-29

Family

ID=32406318

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0216409A Expired - Fee Related FR2849269B1 (fr) 2002-12-20 2002-12-20 Procede de realisation de cavites dans une plaque de silicium

Country Status (3)

Country Link
US (2) US6987051B2 (fr)
JP (1) JP4942343B2 (fr)
FR (1) FR2849269B1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
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US7312092B2 (en) * 2003-12-17 2007-12-25 The Trustees Of Columbia University In The City Of New York Methods for fabrication of localized membranes on single crystal substrate surfaces
FR2875947B1 (fr) * 2004-09-30 2007-09-07 Tracit Technologies Nouvelle structure pour microelectronique et microsysteme et procede de realisation
FR2876220B1 (fr) * 2004-10-06 2007-09-28 Commissariat Energie Atomique Procede d'elaboration de structures empilees mixtes, a zones isolantes diverses et/ou zones de conduction electrique verticale localisees.
WO2007082745A1 (fr) * 2006-01-18 2007-07-26 Universite Catholique De Louvain Gravure sélective pour dispositifs à semiconducteurs
FR2897982B1 (fr) 2006-02-27 2008-07-11 Tracit Technologies Sa Procede de fabrication des structures de type partiellement soi, comportant des zones reliant une couche superficielle et un substrat
US7737049B2 (en) * 2007-07-31 2010-06-15 Qimonda Ag Method for forming a structure on a substrate and device
US7927975B2 (en) * 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
CN102820209B (zh) * 2011-06-08 2015-03-25 中国科学院上海微系统与信息技术研究所 一种高k介质埋层的绝缘体上材料制备方法
US8889562B2 (en) 2012-07-23 2014-11-18 International Business Machines Corporation Double patterning method
US9673307B1 (en) * 2016-04-13 2017-06-06 International Business Machines Corporation Lateral bipolar junction transistor with abrupt junction and compound buried oxide
US9947778B2 (en) 2016-07-15 2018-04-17 International Business Machines Corporation Lateral bipolar junction transistor with controlled junction
CN113056659A (zh) * 2018-09-19 2021-06-29 阿卡什系统公司 用于卫星通信的系统和方法

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
US4956314A (en) * 1989-05-30 1990-09-11 Motorola, Inc. Differential etching of silicon nitride
JPH06132262A (ja) * 1992-10-22 1994-05-13 Hitachi Ltd 薄膜のエッチング方法
FR2700065B1 (fr) * 1992-12-28 1995-02-10 Commissariat Energie Atomique Procédé de fabrication d'accéléromètres utilisant la technologie silicium sur isolant.
DE4336774A1 (de) * 1993-10-28 1995-05-04 Bosch Gmbh Robert Verfahren zur Herstellung von Strukturen
JP3293736B2 (ja) * 1996-02-28 2002-06-17 キヤノン株式会社 半導体基板の作製方法および貼り合わせ基体
JP3352340B2 (ja) * 1995-10-06 2002-12-03 キヤノン株式会社 半導体基体とその製造方法
DE69728022T2 (de) * 1996-12-18 2004-08-12 Canon K.K. Vefahren zum Herstellen eines Halbleiterartikels unter Verwendung eines Substrates mit einer porösen Halbleiterschicht
CA2233096C (fr) * 1997-03-26 2003-01-07 Canon Kabushiki Kaisha Substrat et methode de production
US5976945A (en) * 1997-11-20 1999-11-02 Vanguard International Semiconductor Corporation Method for fabricating a DRAM cell structure on an SOI wafer incorporating a two dimensional trench capacitor
EP0926709A3 (fr) * 1997-12-26 2000-08-30 Canon Kabushiki Kaisha Méthode de fabrication d'une structure SOI
JP4273533B2 (ja) * 1998-03-11 2009-06-03 セイコーエプソン株式会社 半導体装置およびその製造方法
JP3410957B2 (ja) * 1998-03-19 2003-05-26 株式会社東芝 半導体装置及びその製造方法
US6335292B1 (en) 1999-04-15 2002-01-01 Micron Technology, Inc. Method of controlling striations and CD loss in contact oxide etch
FR2795554B1 (fr) * 1999-06-28 2003-08-22 France Telecom Procede de gravure laterale par trous pour fabriquer des dis positifs semi-conducteurs
US6500732B1 (en) * 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
FR2797714B1 (fr) * 1999-08-20 2001-10-26 Soitec Silicon On Insulator Procede de traitement de substrats pour la microelectronique et substrats obtenus par ce procede
US6869884B2 (en) * 2002-08-22 2005-03-22 Chartered Semiconductor Manufacturing Ltd. Process to reduce substrate effects by forming channels under inductor devices and around analog blocks
JP3532188B1 (ja) * 2002-10-21 2004-05-31 沖電気工業株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
US20040180519A1 (en) 2004-09-16
JP2006511975A (ja) 2006-04-06
FR2849269A1 (fr) 2004-06-25
US20060054973A1 (en) 2006-03-16
US6987051B2 (en) 2006-01-17
JP4942343B2 (ja) 2012-05-30

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Effective date: 20100831