ATE415703T1 - Herstellung von hohlräumen in einer siliziumscheibe - Google Patents
Herstellung von hohlräumen in einer siliziumscheibeInfo
- Publication number
- ATE415703T1 ATE415703T1 AT03799651T AT03799651T ATE415703T1 AT E415703 T1 ATE415703 T1 AT E415703T1 AT 03799651 T AT03799651 T AT 03799651T AT 03799651 T AT03799651 T AT 03799651T AT E415703 T1 ATE415703 T1 AT E415703T1
- Authority
- AT
- Austria
- Prior art keywords
- production
- cavities
- insulation layer
- silicon disc
- layer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 title abstract 2
- 239000010703 silicon Substances 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 4
- 238000009413 insulation Methods 0.000 abstract 3
- 238000002513 implantation Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/005—Bulk micromachining
- B81C1/00507—Formation of buried layers by techniques other than deposition, e.g. by deep implantation of elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Element Separation (AREA)
- Thin Film Transistor (AREA)
- Silicon Compounds (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0216409A FR2849269B1 (fr) | 2002-12-20 | 2002-12-20 | Procede de realisation de cavites dans une plaque de silicium |
US44812403P | 2003-02-20 | 2003-02-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE415703T1 true ATE415703T1 (de) | 2008-12-15 |
Family
ID=32683899
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03799651T ATE415703T1 (de) | 2002-12-20 | 2003-12-19 | Herstellung von hohlräumen in einer siliziumscheibe |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1573802B1 (de) |
AT (1) | ATE415703T1 (de) |
AU (1) | AU2003299368A1 (de) |
DE (1) | DE60324960D1 (de) |
WO (1) | WO2004059725A1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5254549B2 (ja) * | 2004-02-19 | 2013-08-07 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 半導体複合構造体 |
FR2875947B1 (fr) * | 2004-09-30 | 2007-09-07 | Tracit Technologies | Nouvelle structure pour microelectronique et microsysteme et procede de realisation |
FR2876220B1 (fr) | 2004-10-06 | 2007-09-28 | Commissariat Energie Atomique | Procede d'elaboration de structures empilees mixtes, a zones isolantes diverses et/ou zones de conduction electrique verticale localisees. |
FR2897982B1 (fr) | 2006-02-27 | 2008-07-11 | Tracit Technologies Sa | Procede de fabrication des structures de type partiellement soi, comportant des zones reliant une couche superficielle et un substrat |
FR3000601B1 (fr) * | 2012-12-28 | 2016-12-09 | Commissariat Energie Atomique | Procede de formation des espaceurs d'une grille d'un transistor |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4956314A (en) * | 1989-05-30 | 1990-09-11 | Motorola, Inc. | Differential etching of silicon nitride |
JPH06132262A (ja) * | 1992-10-22 | 1994-05-13 | Hitachi Ltd | 薄膜のエッチング方法 |
FR2700065B1 (fr) * | 1992-12-28 | 1995-02-10 | Commissariat Energie Atomique | Procédé de fabrication d'accéléromètres utilisant la technologie silicium sur isolant. |
US5976945A (en) * | 1997-11-20 | 1999-11-02 | Vanguard International Semiconductor Corporation | Method for fabricating a DRAM cell structure on an SOI wafer incorporating a two dimensional trench capacitor |
US6335292B1 (en) * | 1999-04-15 | 2002-01-01 | Micron Technology, Inc. | Method of controlling striations and CD loss in contact oxide etch |
FR2795554B1 (fr) * | 1999-06-28 | 2003-08-22 | France Telecom | Procede de gravure laterale par trous pour fabriquer des dis positifs semi-conducteurs |
-
2003
- 2003-12-19 AT AT03799651T patent/ATE415703T1/de not_active IP Right Cessation
- 2003-12-19 DE DE60324960T patent/DE60324960D1/de not_active Expired - Lifetime
- 2003-12-19 EP EP03799651A patent/EP1573802B1/de not_active Expired - Lifetime
- 2003-12-19 AU AU2003299368A patent/AU2003299368A1/en not_active Abandoned
- 2003-12-19 WO PCT/FR2003/003820 patent/WO2004059725A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2004059725A1 (fr) | 2004-07-15 |
EP1573802B1 (de) | 2008-11-26 |
EP1573802A1 (de) | 2005-09-14 |
AU2003299368A1 (en) | 2004-07-22 |
DE60324960D1 (de) | 2009-01-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |