JP5144127B2 - ナノインプリント用のモールドの製造方法 - Google Patents

ナノインプリント用のモールドの製造方法 Download PDF

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Publication number
JP5144127B2
JP5144127B2 JP2007137234A JP2007137234A JP5144127B2 JP 5144127 B2 JP5144127 B2 JP 5144127B2 JP 2007137234 A JP2007137234 A JP 2007137234A JP 2007137234 A JP2007137234 A JP 2007137234A JP 5144127 B2 JP5144127 B2 JP 5144127B2
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Japan
Prior art keywords
pattern
resist
layer
inversion
forming
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JP2007137234A
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English (en)
Japanese (ja)
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JP2008290316A (ja
JP2008290316A5 (enExample
Inventor
敦則 寺崎
淳一 関
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2007137234A priority Critical patent/JP5144127B2/ja
Priority to US12/124,492 priority patent/US7960090B2/en
Priority to KR1020097026103A priority patent/KR101140939B1/ko
Priority to PCT/JP2008/059862 priority patent/WO2008146869A2/en
Priority to CN2008800166086A priority patent/CN101681095B/zh
Publication of JP2008290316A publication Critical patent/JP2008290316A/ja
Publication of JP2008290316A5 publication Critical patent/JP2008290316A5/ja
Application granted granted Critical
Publication of JP5144127B2 publication Critical patent/JP5144127B2/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
JP2007137234A 2007-05-23 2007-05-23 ナノインプリント用のモールドの製造方法 Active JP5144127B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007137234A JP5144127B2 (ja) 2007-05-23 2007-05-23 ナノインプリント用のモールドの製造方法
US12/124,492 US7960090B2 (en) 2007-05-23 2008-05-21 Pattern forming method, pattern formed thereby, mold, processing apparatus, and processing method
KR1020097026103A KR101140939B1 (ko) 2007-05-23 2008-05-22 패턴 형성 방법, 패턴 또는 패턴에 의해 형성되는 몰드
PCT/JP2008/059862 WO2008146869A2 (en) 2007-05-23 2008-05-22 Pattern forming method, pattern or mold formed thereby
CN2008800166086A CN101681095B (zh) 2007-05-23 2008-05-22 图案形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007137234A JP5144127B2 (ja) 2007-05-23 2007-05-23 ナノインプリント用のモールドの製造方法

Publications (3)

Publication Number Publication Date
JP2008290316A JP2008290316A (ja) 2008-12-04
JP2008290316A5 JP2008290316A5 (enExample) 2010-06-24
JP5144127B2 true JP5144127B2 (ja) 2013-02-13

Family

ID=40072723

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007137234A Active JP5144127B2 (ja) 2007-05-23 2007-05-23 ナノインプリント用のモールドの製造方法

Country Status (5)

Country Link
US (1) US7960090B2 (enExample)
JP (1) JP5144127B2 (enExample)
KR (1) KR101140939B1 (enExample)
CN (1) CN101681095B (enExample)
WO (1) WO2008146869A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101846644B1 (ko) * 2016-02-15 2018-05-18 울산과학기술원 수처리 멤브레인 제조용 마이크로 구조 템플릿 제조 방법
KR20230082018A (ko) 2020-10-07 2023-06-08 다이니폰 인사츠 가부시키가이샤 규소 함유 레지스트용 경화성 수지 조성물, 패턴 형성 방법, 임프린트 몰드의 제조 방법, 및 반도체 디바이스의 제조 방법

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7255805B2 (en) * 2004-01-12 2007-08-14 Hewlett-Packard Development Company, L.P. Photonic structures, devices, and methods
JP4533358B2 (ja) * 2005-10-18 2010-09-01 キヤノン株式会社 インプリント方法、インプリント装置およびチップの製造方法
JP5067848B2 (ja) * 2007-07-31 2012-11-07 キヤノン株式会社 パターンの形成方法
KR101463290B1 (ko) * 2008-05-23 2014-12-08 코넬 유니버시티 전자 및 전기 장치에 사용되는 유기 물질의 직교 프로세싱
JP5261165B2 (ja) 2008-12-25 2013-08-14 チェイル インダストリーズ インコーポレイテッド 微細パターンの形成方法
EP2230206B1 (fr) * 2009-03-13 2013-07-17 Nivarox-FAR S.A. Moule pour galvanoplastie et son procédé de fabrication
EP2230207A1 (fr) * 2009-03-13 2010-09-22 Nivarox-FAR S.A. Moule pour galvanoplastie et son procédé de fabrication
WO2010123032A1 (ja) * 2009-04-24 2010-10-28 日産化学工業株式会社 パターン反転膜形成用組成物及び反転パターン形成方法
JP5428636B2 (ja) * 2009-06-17 2014-02-26 住友電気工業株式会社 回折格子の形成方法
JP2011088340A (ja) * 2009-10-22 2011-05-06 Toshiba Corp テンプレート及びパターン形成方法
KR101108162B1 (ko) * 2010-01-11 2012-01-31 서울대학교산학협력단 고해상도 유기 박막 패턴 형성 방법
CN102478764B (zh) * 2010-11-30 2013-08-07 中芯国际集成电路制造(北京)有限公司 双重图形化方法
JP2012234057A (ja) * 2011-05-02 2012-11-29 Elpida Memory Inc フォトマスクおよび半導体装置
JP5743718B2 (ja) * 2011-05-31 2015-07-01 キヤノン株式会社 成形型の製造方法及び光学素子
JP2013069920A (ja) * 2011-09-22 2013-04-18 Toshiba Corp 成膜方法およびパターン形成方法
JP6028378B2 (ja) * 2011-09-27 2016-11-16 凸版印刷株式会社 フォトマスクの製造方法
US8921135B2 (en) * 2012-03-07 2014-12-30 Ulvac, Inc. Method for manufacturing device
JP6028384B2 (ja) * 2012-05-07 2016-11-16 大日本印刷株式会社 ナノインプリントリソグラフィ用テンプレートの製造方法
JP6019967B2 (ja) * 2012-09-10 2016-11-02 大日本印刷株式会社 パターン形成方法
JP2014072226A (ja) * 2012-09-27 2014-04-21 Tokyo Electron Ltd パターン形成方法
JP5673900B2 (ja) * 2012-12-28 2015-02-18 大日本印刷株式会社 ナノインプリントモールドの製造方法
US9576773B2 (en) * 2013-07-30 2017-02-21 Corporation For National Research Initiatives Method for etching deep, high-aspect ratio features into glass, fused silica, and quartz materials
KR101860243B1 (ko) * 2013-11-08 2018-05-21 도쿄엘렉트론가부시키가이샤 Euv 리소그래피를 가속화하기 위한 사후처리 방법을 이용한 방법
TWI662359B (zh) * 2013-12-30 2019-06-11 佳能奈米科技股份有限公司 次２０奈米之形貌體的均勻壓印圖案轉移方法
JP6301672B2 (ja) * 2014-02-12 2018-03-28 旭化成株式会社 反転構造体の製造方法及びこれを用いた凹凸構造付基板
US11049725B1 (en) * 2014-05-29 2021-06-29 Corporation For National Research Initiatives Method for etching deep, high-aspect ratio features into silicon carbide and gallium nitride
US10620532B2 (en) * 2014-11-11 2020-04-14 Canon Kabushiki Kaisha Imprint method, imprint apparatus, mold, and article manufacturing method
US9418886B1 (en) * 2015-07-24 2016-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming conductive features
JP6213610B2 (ja) * 2016-04-27 2017-10-18 大日本印刷株式会社 ナノインプリントリソグラフィ用テンプレートの製造方法
JP6802969B2 (ja) * 2016-09-21 2020-12-23 大日本印刷株式会社 テンプレートの製造方法、及び、テンプレート
US10854455B2 (en) * 2016-11-21 2020-12-01 Marvell Asia Pte, Ltd. Methods and apparatus for fabricating IC chips with tilted patterning
JP6972581B2 (ja) * 2017-03-01 2021-11-24 大日本印刷株式会社 インプリントモールド及びインプリントモールドの製造方法
JP6800779B2 (ja) * 2017-03-06 2020-12-16 Hoya株式会社 転写用マスクの製造方法、および半導体デバイスの製造方法
KR102881023B1 (ko) 2017-08-31 2025-11-04 메탈렌츠 인코포레이티드 투과성 메타표면 렌즈 통합
JP6512254B2 (ja) * 2017-09-20 2019-05-15 大日本印刷株式会社 ナノインプリントリソグラフィ用テンプレートの製造方法
JP2019201079A (ja) * 2018-05-15 2019-11-21 大日本印刷株式会社 テンプレートの製造方法およびテンプレート
US10867854B2 (en) * 2019-01-08 2020-12-15 Tokyo Electron Limited Double plug method for tone inversion patterning
US11501969B2 (en) * 2019-01-22 2022-11-15 International Business Machines Corporation Direct extreme ultraviolet lithography on hard mask with reverse tone
US11978752B2 (en) 2019-07-26 2024-05-07 Metalenz, Inc. Aperture-metasurface and hybrid refractive-metasurface imaging systems
US20220319838A1 (en) * 2021-04-01 2022-10-06 Tokyo Electron Limited Method of Line Roughness Reduction and Self-Aligned Multi-Patterning Formation Using Tone Inversion
CN113433795A (zh) * 2021-06-23 2021-09-24 南方科技大学 一种黑色矩阵的制备方法
EP4500265A2 (en) 2022-03-31 2025-02-05 Metalenz, Inc. Polarization sorting metasurface microlens array device

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5862643A (ja) * 1981-10-09 1983-04-14 Kiyoshi Oguchi 電離放射線感応ネガ型レジスト
JPS62241338A (ja) 1986-04-14 1987-10-22 Toshiba Corp パタ−ン形成方法
JPH05346658A (ja) 1992-06-15 1993-12-27 Nec Corp 位相シフトレチクルの製造方法
US5529681A (en) * 1993-03-30 1996-06-25 Microparts Gesellschaft Fur Mikrostrukturtechnik Mbh Stepped mould inserts, high-precision stepped microstructure bodies, and methods of producing the same
JPH09312336A (ja) 1996-05-20 1997-12-02 Yamaha Corp 接続孔形成法
US5863707A (en) * 1997-02-11 1999-01-26 Advanced Micro Devices, Inc. Method for producing ultra-fine interconnection features
JPH11300755A (ja) * 1998-04-15 1999-11-02 Seiko Epson Corp 樹脂板製造用鋳型の製造方法及び樹脂板の製造方法
US6194268B1 (en) * 1998-10-30 2001-02-27 International Business Machines Corporation Printing sublithographic images using a shadow mandrel and off-axis exposure
US6221562B1 (en) * 1998-11-13 2001-04-24 International Business Machines Corporation Resist image reversal by means of spun-on-glass
JP3998393B2 (ja) * 1999-02-25 2007-10-24 株式会社東芝 パターン形成方法
JP2001243665A (ja) * 1999-11-26 2001-09-07 Canon Inc 光ディスク基板成型用スタンパおよびその製造方法
US6420088B1 (en) * 2000-06-23 2002-07-16 International Business Machines Corporation Antireflective silicon-containing compositions as hardmask layer
JP3848070B2 (ja) * 2000-09-27 2006-11-22 株式会社東芝 パターン形成方法
US6387787B1 (en) * 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use
US6489237B1 (en) * 2001-12-04 2002-12-03 Taiwan Semiconductor Manufacturing Company Method of patterning lines in semiconductor devices
JP2003172808A (ja) * 2001-12-06 2003-06-20 Hitachi Maxell Ltd 超撥水性プラスチック基板及び反射防止膜
US6743368B2 (en) 2002-01-31 2004-06-01 Hewlett-Packard Development Company, L.P. Nano-size imprinting stamp using spacer technique
JP2004363371A (ja) * 2003-06-05 2004-12-24 Renesas Technology Corp 電子デバイスの製造方法
US6900134B1 (en) * 2004-03-18 2005-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming openings in a substrate using bottom antireflective coatings
JP2005329685A (ja) * 2004-05-21 2005-12-02 Sony Corp 金型及びその製造方法
US7547504B2 (en) * 2004-09-21 2009-06-16 Molecular Imprints, Inc. Pattern reversal employing thick residual layers
JP4290177B2 (ja) * 2005-06-08 2009-07-01 キヤノン株式会社 モールド、アライメント方法、パターン形成装置、パターン転写装置、及びチップの製造方法
JP2007035998A (ja) * 2005-07-28 2007-02-08 Toppan Printing Co Ltd インプリント用モールド
JP4533358B2 (ja) * 2005-10-18 2010-09-01 キヤノン株式会社 インプリント方法、インプリント装置およびチップの製造方法
US7341825B2 (en) 2006-05-25 2008-03-11 Hitachi Global Storage Technologies Netherlands B.V. Method for producing high resolution nano-imprinting masters
JP2008078617A (ja) * 2006-08-25 2008-04-03 Canon Inc 構造体の製造方法
KR100876783B1 (ko) * 2007-01-05 2009-01-09 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성 방법
JP5188192B2 (ja) * 2007-02-20 2013-04-24 キヤノン株式会社 モールド、モールドの製造方法、インプリント装置及びインプリント方法、インプリント方法を用いた構造体の製造方法
US20100040838A1 (en) * 2008-08-15 2010-02-18 Abdallah David J Hardmask Process for Forming a Reverse Tone Image

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101846644B1 (ko) * 2016-02-15 2018-05-18 울산과학기술원 수처리 멤브레인 제조용 마이크로 구조 템플릿 제조 방법
KR20230082018A (ko) 2020-10-07 2023-06-08 다이니폰 인사츠 가부시키가이샤 규소 함유 레지스트용 경화성 수지 조성물, 패턴 형성 방법, 임프린트 몰드의 제조 방법, 및 반도체 디바이스의 제조 방법

Also Published As

Publication number Publication date
JP2008290316A (ja) 2008-12-04
US20080292976A1 (en) 2008-11-27
WO2008146869A3 (en) 2009-05-22
WO2008146869A2 (en) 2008-12-04
US7960090B2 (en) 2011-06-14
KR101140939B1 (ko) 2012-05-03
KR20100011975A (ko) 2010-02-03
CN101681095B (zh) 2012-05-30
CN101681095A (zh) 2010-03-24

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